DSP8-12A Standard Rectifier V =2x1200V RRM I = 8A FAV V = 1.08V F Phase leg Part number DSP8-12A Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Diode for main rectification ● Industry standard outline ● Very low leakage current ● For single and three phase ● RoHS compliant ● Very low forward voltage drop bridge configurations ● Epoxy meets UL 94V-0 ● Improved thermal behaviour IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-12A Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1300 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1200 V RRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25°C 10 µA R R VJ V = 1 2 0 0 V T = 1 5 0 °C 0.2 mA R VJ V forward voltage drop I = 8 A T = 25°C 1.16 V F F VJ I = 1 6 A 1.35 V F I = 8 A T = 1 5 0 °C 1.08 V F VJ I = 1 6 A 1.34 V F I average forward current T = 1 6 0 °C T = 1 7 5 °C 8 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.79 V F0 VJ for power loss calculation only r slope resistance 33 mΩ F R thermal resistance junction to case 1.5 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 100 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 120 A FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 130 A R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 100 A VJ t = 8,3 ms; (60 Hz), sine V = 0 V 110 A R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 72 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 70 A²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 50 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 50 A²s R C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 4 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-12A Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 25 A RMS T storage temperature -55 150 °C stg T virtual junction temperature -55 175 °C VJ Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part Number abcdef Logo YYWWZ Date Code Lot # XXXXXX Assembly Line Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSP8-12A DSP8-12A Tube 50 465062 Similar Part Package Voltage class DSP8-12AC ISOPLUS220AB (3) 1200 DSP8-12S TO-263AB (D2Pak) (2) 1200 DSP8-12AS TO-263AA (D2Pak) (3) 1200 DSP8-08A TO-220AB (3) 800 DSP8-08S TO-263AB (D2Pak) (2) 800 DSP8-08AS TO-263AA (D2Pak) (3) 800 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Rectifier 0 0 V threshold voltage 0.79 V 0 max R slope resistance * 30 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-12A Outlines TO-220 Dim. Millimeter Inches Min. Max. Min. Max. A A 4.32 4.82 0.170 0.190 A1 E Q A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 1 b 0.64 1.01 0.025 0.040 ØP H 4 b2 1.15 1.65 0.045 0.065 D C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 1 2 3 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC 1 3x b2 L H1 5.85 6.85 0.230 0.270 L L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 3x b C Q 2.54 3.18 0.100 0.125 2x e A2 1 2/4 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-12A Rectifier 20 100 102 50Hz,80%V V =0 V RRM R 16 80 T =45°C VJ IF 12 IFSM TVJ= 45°C I2t T = 150°C VJ [A] 8 125°C [A] 25°C 60 [A2s] TVJ= 150°C T = 150°C VJ 4 0 40 101 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0.01 0.1 1 1 2 3 4 5 6 78 10 V [V] t [s] t [ms] F Fig.1 Forwardcurrentversus Fig.2 Surgeoverloadcurrent Fig.3 I2tversustimeperdiode voltagedropperdiode 28 16 R : DC= thJA 24 1 4 K/W 0.5 DC= 8 K/W 0.4 1 10 K/W 20 12 0.5 12 K/W I 0.33 F(AV)M 0.17 0.4 16 K/W 16 0.08 Ptot 0.33 20 K/W 0.17 [A] 8 0.08 12 [W] 8 4 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 0 50 100 150 200 I [A] T [°C] T [°C] F(AV)M amb C Fig.4 Powerdissipationvs.directoutputcurrentandambienttemperature Fig.5 Max.forwardcurrentvs. casetemperature 1.6 1.2 ConstantsforZ calculation: thJC ZthJC i Rthi(K/W) ti(s) 0.8 1 0.155 0.0005 2 0.332 0.0095 [K/W] 3 0.713 0.17 0.4 4 0.3 0.8 5 0.00001 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig.6 Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

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