DS 17 DSI 17 DSA 17 DSAI 17 Rectifier Diode V = 800-1800 V RRM Avalanche Diode I = 40 A F(RMS) I = 25 A F(AV)M DO-203 AA V V (cid:255)(cid:1) V Anode Cathode RSM (BR)min RRM V V V on stud on stud C A DS DSI 900 - 800 DS17-08A DSI17-08A DSA DSAI A C 1300 - 1200 DS17-12A DSI17-12A 1300 1300 1200 DSA17-12A DSAI17-12A 1700 1750 1600 DSA17-16A DSAI17-16A 1900 1950 1800 DSA17-18A DSAI17-18A 10-32UNF (cid:1) Only for Avalanche Diodes A = Anode C = Cathode Symbol Test Conditions Maximum Ratings I T = T 40 A IF(RMS) TVJ = 12VJ5M(cid:1)C; 180(cid:1) sine 25 A Features F(AV)M case P DSA(I) types, T = T , t = 10 (cid:2)s 7 kW (cid:2) International standard package, RSM VJ VJM p JEDEC DO-203 AA (DO-4) I T = 45(cid:1)C; t = 10 ms (50 Hz), sine 370 A (cid:2) Planar glassivated chips FSM VJ V = 0 t = 8.3 ms(60 Hz), sine 400 A R Applications T = T t = 10 ms (50 Hz), sine 300 A VJ VJM (cid:2) Supplies for DC power equipment V = 0 t = 8.3 ms(60 Hz), sine 320 A R (cid:2) DC supply for PWM inverter I2t T = 45(cid:1)C t = 10 ms (50 Hz), sine 680 A2s (cid:2) Field supply for DC motors VJ V = 0 t = 8.3 ms(60 Hz), sine 660 A2s (cid:2) Battery DC power supplies R T = T t = 10 ms (50 Hz), sine 450 A2s VJ VJM Advantages V = 0 t = 8.3 ms(60 Hz), sine 430 A2s R (cid:2) Space and weight savings T -40...+180 (cid:1)C (cid:2) Simple mounting TVJ 180 (cid:1)C (cid:2) Improved temperature and power TVJM -40...+180 (cid:1)C cycling stg (cid:2) Reduced protection circuits M Mounting torque 2.2-2.8 Nm d 19-25 lb.in. Weight 6 g Dimensions in mm (1 mm = 0.0394") Symbol Test Conditions Characteristic Values I T = T ; V = V (cid:3) 4 mA R VJ VJM R RRM V I = 55 A; T = 25(cid:1)C (cid:3) 1.36 V F F VJ V For power-loss calculations only 0.85 V rT0 T = T 8 m(cid:4) T VJ VJM R DC current 1.5 K/W thJC R DC current 2.1 K/W thJH d Creepage distance on surface 2.05 mm S d Strike distance through air 2.05 mm A a Max. allowable acceleration 100 m/s2 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1 - 2

DS 17 DSI 17 DSA 17 DSAI 17 100 400 1000 typ. lim. 50Hz, 80% V V = 0 V A A RRM 8A020s R 80 600 300 T = 45°C VJ I I I2t F FSM T = 45°C T = 180°C VJ 60 VJ 400 T = 25°C VJ 200 T = 180°C T = 180°C 40 VJ VJ 200 100 20 0 0 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1V.6 1.8 10-3 10-2 10-1 s 100 1 2 3 4 5 6 7m8s910 V t t F Fig. 1 Forward characteristics Fig. 2 Surge overload current Fig. 3 I2t versus time (1-10 ms) I : crest value, t: duration FSM 50 40 R : W thJA A 2.8 K/W 40 3.2 K/W 30 P I F 4,8 K/W F(AV)M 30 6.3 K/W 8.5 K/W 20 Cu 80x80 20 DC 180° sin 120° 10 10 60° 30° 0 0 0 10 20 30 40A 5000 50 100 150 °C 200 0 50 100 150°C I T T F(AV)M amb case Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case temperature 180° sine R for various conduction angles d: thJH K/W d R (K/W) thJH DC 2.10 Z 2 180(cid:1) 2.23 thJH 120(cid:1) 2.33 60(cid:1) 2.53 30(cid:1) 2.72 1 Constants for Z calculation: thJH i R (K/W) t (s) thi i 1 0.1006 0.0021 2 0.5311 0.0881 3 0.8683 2.968 0 10-3 10-2 10-1 100 101 s 102 4 0.600 3.20 t Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2 - 2