DSEP8-12A HiPerFRED V = 1200V RRM I = 8A FAV t = 40ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP8-12A Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160930a ©2016 IXYS all rights reserved

DSEP8-12A Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1200 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1200 V RRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25°C 60 µA R R VJ V = 1 2 0 0 V T = 1 5 0 °C 0.25 mA R VJ V forward voltage drop I = 1 0 A T = 25°C 2.94 V F F VJ I = 2 0 A 3.57 V F I = 1 0 A T = 1 5 0 °C 1.96 V F VJ I = 2 0 A 2.56 V F I average forward current T = 1 3 5 °C T = 1 7 5 °C 8 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 1.20 V F0 VJ for power loss calculation only r slope resistance 57 mΩ F R thermal resistance junction to case 2.5 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 60 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 40 A FSM R VJ C junction capacitance V = 6 0 0 V f = 1 MHz T = 25°C 3 pF J R VJ I max. reverse recovery current T = 25°C 4 A RM VJ I = 10A; V = 600V T =100°C 8 A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 40 ns rr F VJ T =100°C 115 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160930a ©2016 IXYS all rights reserved

DSEP8-12A Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 35 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part Number XXXXXX Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSEP8-12A DSEP8-12A Tube 50 475912 Equivalent Circuits for Simulation T =175°C * on die level VJ I V R Fast 0 0 Diode V threshold voltage 1.2 V 0 max R slope resistance * 54 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160930a ©2016 IXYS all rights reserved

DSEP8-12A Outlines TO-220 A Dim. Millimeter Inches = supplier option Min. Max. Min. Max. A1 E Q A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 1 A2 2.29 2.79 0.090 0.110 ØP H 4 b 0.64 1.01 0.025 0.040 D b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 1 3 D 14.73 16.00 0.580 0.630 1 E 9.91 10.66 0.390 0.420 2x b2 L e 5.08 BSC 0.200 BSC L H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 2x b C ØP 3.54 4.08 0.139 0.161 e A2 Q 2.54 3.18 0.100 0.125 3 1 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160930a ©2016 IXYS all rights reserved

DSEP8-12A Fast Diode 30 2000 40 T =125°C T =125°C VJ VJ V =800V V =800V 25 R R T = 25°C 1500 30 VJ 20 100°C I =20A I =20A F [AIF]15 150°C [µQCr1]000 IIFFF==105AA [IRAM]20 IIFF==105AA 10 500 10 5 0 0 0 0 1 2 3 4 100 1000 0 200 400 600 800 1000 V [V] -di /dt [A/µs] -di /dt [A/µs] F F F Fig.1 Forwardcurrent Fig.2 Typ.reverserecov.chargeQ Fig.3 Typ.peak reversecurrent r IFversusVF versus -diF/dt IRMversus -diF/dt 2.0 150 120 1.2 T =125°C VJ T =125°C V =800V VJ 140 R I =10A F 1.5 VR=800V 130 80 0.8 trr I =20A VFR tfr K 1.0 120 F f [ns] IF=10A [V] [µs] IF= 5A I 110 40 0.4 RM 0.5 Q 100 r V t FR fr 0.0 90 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 TVJ [°C] -diF/dt [A/µs] -diF/dt [A/µs] Fig.4 Typ.dynamicparameters Fig.5 Typ.recoverytime Fig.6 Typ.peakforwardvoltage Q,I versusT t versus -di /dt V andt versusdi /dt r RM VJ rr F FR fr F 10 1 Z ConstantsforZ calculation: thJC thJC 0.1 i R (K/W) t (s) thi i [K/W] 1 0.0200 0.0002 2 0.3000 0.0040 0.01 3 0.8000 0.0200 4 1.3800 0.0100 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig.7 Transient thermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160930a ©2016 IXYS all rights reserved