DSEP15-12CR HiPerDynFRED V = 1200V RRM I = 15A FAV t = 15ns rr High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode Part number DSEP15-12CR Backside: isolated 1 3 Features / Advantages: Applications: Package: ISOPLUS247 ● Planar passivated chips ● Antiparallel diode for high frequency ● Isolation Voltage: 3 6 0 0 V~ ● Very low leakage current switching devices ● Industry standard outline ● Very short recovery time ● Antisaturation diode ● RoHS compliant ● Improved thermal behaviour ● Snubber diode ● Epoxy meets UL 94V-0 ● Very low Irm-values ● Free wheeling diode ● Soldering pins for PCB mounting ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Backside: DCB ceramic ● Soft reverse recovery for low EMI/RFI supplies (SMPS) ● Reduced weight ● Low Irm reduces: ● Uninterruptible power supplies (UPS) ● Advanced power cycling - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b ©2016 IXYS all rights reserved

DSEP15-12CR Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1200 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1200 V RRM VJ I reverse current, drain current V = 1 2 0 0 V T = 25°C 100 µA R R VJ V = 1 2 0 0 V T = 1 5 0 °C 0.5 mA R VJ V forward voltage drop I = 1 5 A T = 25°C 4.04 V F F VJ I = 3 0 A 4.45 V F I = 1 5 A T = 1 5 0 °C 2.67 V F VJ I = 3 0 A 3.10 V F I average forward current T = 1 3 5 °C T = 1 7 5 °C 15 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 1.82 V F0 VJ for power loss calculation only r slope resistance 29.8 mΩ F R thermal resistance junction to case 1 K/W thJC R thermal resistance case to heatsink 0.25 K/W thCH P total power dissipation T = 25°C 150 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 110 A FSM R VJ C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 9 pF J R VJ I max. reverse recovery current T = 25°C 10 A RM VJ I = 15A; V = 800V T =125°C 15 A F R VJ t reverse recovery time -di /dt = 600A/µs T = 25°C 15 ns rr F VJ T =125°C 110 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b ©2016 IXYS all rights reserved

DSEP15-12CR Package ISOPLUS247 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 70 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 6 g F mounting force with clip 20 120 N C d terminal to terminal 5.4 mm Spp/App creepage distance on surface | striking distance through air d terminal to backside 4.1 mm Spb/Apb V isolation voltage t = 1 second 3600 V ISOL 50/60 Hz, RMS; II S O L ≤ 1 mA t = 1 minute 3000 V Product Marking Logo IXYS ISOPLUS® PartNo. XXXXXXXXX AssemblyLine Zyyww abcd AssemblyCode DateCode Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSEP15-12CR DSEP15-12CR Tube 30 482137 Similar Part Package Voltage class DSEP12-12A TO-220AC (2) 1200 DSEP12-12B TO-220AC (2) 1200 Equivalent Circuits for Simulation T =175°C * on die level VJ I V R Fast 0 0 Diode V threshold voltage 1.82 V 0 max R slope resistance * 23.5 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b ©2016 IXYS all rights reserved

DSEP15-12CR Outlines ISOPLUS247 A A2 2 E E1 D Millimeter Inches Dim. Q min max min max A 4.83 5.21 0.190 0.205 R A1 2.29 2.54 0.090 0.100 D D3 D1 Ab2 11..9114 21..1460 00..007455 00..008555 b2 1.91 2.20 0.075 0.087 b4 2.92 3.24 0.115 0.128 c 0.61 0.83 0.024 0.033 D 20.80 21.34 0.819 0.840 1 2 3 D1 15.75 16.26 0.620 0.640 1 D2 1.65 2.15 0.065 0.085 L b4 D3 20.30 20.70 0.799 0.815 E 15.75 16.13 0.620 0.635 E1 13.21 13.72 0.520 0.540 e 10.90BSC 0.429BSC L L 19.81 20.60 0.780 0.811 L1 3.81 4.38 0.150 0.172 Q 5.59 6.20 0.220 0.244 R 4.25 5.50 0.167 0.217 W - 0.10 - 0.004 2x b2 2x b c Die konvexe Form des Substrates ist typ. < 0.04 mm über der e Kunststoffoberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic A1 surface level of device bottom side Die Gehäuseabmessungen entsprechen demTyp TO-247AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC W outlineTO-247AD except screw hole and except Lmax. 1 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b ©2016 IXYS all rights reserved

DSEP15-12CR Fast Diode 1.2 24 T = 125°C T = 125°C VJ VJ 40 V = 800 V V = 800 V 1.0 R 20 R 30 T =150°C 0.8 IF = 30A 16 VJ IF TTVJ ==12255°°CC Qrr 0.6 IIFF ==71.55AA Irr12 IF = 30 A VJ I = 15 A 20 F [nC] [A] I = 7.5 A [A] F 0.4 8 10 0.2 4 0 0.0 0 0 1 2 3 4 5 100 1000 0 200 400 600 800 1000 V [V] -di /dt [A/μs] -di /dt [A/μs] F F F Fig.1 Forwardcurrent Fig.2 Typ.reverserecovcharge Fig.3 Peakreversecurrent I versusV Q versus-di /dt I versus-di /dt F F r F RM F 2.0 180 200 40 T = 125°C T =125°C VJ VJ 160 VR = 800 V IF = 15 A 1.5 I = 30 A 150 30 140 F I = 15 A F I = 7.5 A V 120 F tfr FR KF 1.0 I trr 100 20 RM 100 [μs] [V] [ns] V 80 FR 0.5 50 10 t rr 60 Q rr 0.0 40 0 0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 T [°C] -di /dt [A/μs] -di /dt [A/μs] VJ F F Fig.4 Typ.dynamicparameters Fig.5 Typ.recoverytime Fig.6 Typ.peakforwardvoltage Q,I versusT t versus-di /dt V andt versusdi /dt r RM VJ rr F FR fr F 400 10 T = 125°C VJ V = 800 V R 300 1 E rec Z I = 30 A thJH F 200 I = 15 A 0.1 F [µJ] I =7.5 A F [K/W] 100 0.01 0 0.001 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 -di /dt [A/μs] t [s] F Fig.7 Typ.recoveryenergy Fig.8 Transientthermalresistancejunctiontocase E versus-di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160916b ©2016 IXYS all rights reserved

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