DSEP15-06B HiPerFRED V = 600V RRM I = 15A FAV t = 25ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP15-06B Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160923b ©2016 IXYS all rights reserved

DSEP15-06B Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 600 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 600 V RRM VJ I reverse current, drain current V = 6 0 0 V T = 25°C 100 µA R R VJ V = 6 0 0 V T = 1 5 0 °C 0.5 mA R VJ V forward voltage drop I = 1 5 A T = 25°C 2.54 V F F VJ I = 3 0 A 2.99 V F I = 1 5 A T = 1 5 0 °C 1.59 V F VJ I = 3 0 A 2.04 V F I average forward current T = 1 3 0 °C T = 1 7 5 °C 15 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.98 V F0 VJ for power loss calculation only r slope resistance 28 mΩ F R thermal resistance junction to case 1.6 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 95 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 110 A FSM R VJ C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 12 pF J R VJ I max. reverse recovery current T = 25°C 2 A RM VJ I = 15A; V = 300V T =100°C 3 A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 25 ns rr F VJ T =100°C 80 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160923b ©2016 IXYS all rights reserved

DSEP15-06B Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 35 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part Number XXXXXX Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSEP15-06B DSEP15-06B Tube 50 492639 Similar Part Package Voltage class DSEP15-06A TO-220AC (2) 600 DSEP15-06AS TO-263AB (D2Pak) (2) 600 DSEP15-06BS TO-263AB (D2Pak) (2) 600 Equivalent Circuits for Simulation T =175°C * on die level VJ I V R Fast 0 0 Diode V threshold voltage 0.98 V 0 max R slope resistance * 25 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160923b ©2016 IXYS all rights reserved

DSEP15-06B Outlines TO-220 A Dim. Millimeter Inches = supplier option Min. Max. Min. Max. A1 E Q A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 1 A2 2.29 2.79 0.090 0.110 ØP H 4 b 0.64 1.01 0.025 0.040 D b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 1 3 D 14.73 16.00 0.580 0.630 1 E 9.91 10.66 0.390 0.420 2x b2 L e 5.08 BSC 0.200 BSC L H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 2x b C ØP 3.54 4.08 0.139 0.161 e A2 Q 2.54 3.18 0.100 0.125 3 1 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160923b ©2016 IXYS all rights reserved

DSEP15-06B Fast Diode 50 300 12 T =100°C VJ V =300V 250 R 10 I =30A 40 F TVJ=150°C I =30A IF=15A 200 F 8 I =7.5A IF 30 T =100°C Qr IF=15A IRM F VJ 150 IF=7.5A 6 [A] 20 [µC] [A] T =100°C 100 4 VJ T =25°C V =300V VJ R 10 50 2 0 0 0 0 1 2 3 4 100 1000 0 200 400 600 800 1000 V [V] -di /dt [A/µs] -di /dt [A/µs] F F F Fig.1 Forwardcurrent Fig.2 Typ.reverserecov.charge Fig.3 Typ.peakreversecurrent I versusV Q versus-di /dt I versus -di /dt F F r F RM F 2.0 120 60 0.30 T =100°C VJ T =100°C VJ V =300V R 50 I =15A 0.25 F 100 1.5 40 0.20 t I =30A rr F V 80 FR t Kf 1.0 [ns] IF=15A 30 0[.1µ5fsr] I =7.5A F [V] I 60 20 t 0.10 RM fr 0.5 V FR 10 0.05 40 Q r 0.0 0 0.00 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 T [°C] -di /dt [A/µs] -di /dt [A/µs] VJ F F Fig.4 Dynamicparameters Fig.5 Typ.recoverytime Fig.6 Typ.peakforwardvoltage Q,I versusT t versus -di /dt V andt versusdi /dt r RM VJ rr F FR fr F 10 1 Z thJC 0.1 ConstantsforZ calculation: [K/W] thJC i R (K/W) t (s) thi i 0.01 1 0.908 0.0052 2 0.350 0.0003 0.001 DSEP15-06B 3 0.342 0.017 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig.7 Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20160923b ©2016 IXYS all rights reserved

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I XYS: DSEP15-06B