DSEC30-06A HiPerFRED V = 600V RRM I =2x 15A FAV t = 35ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-06A Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b ©2013 IXYS all rights reserved

DSEC30-06A Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 600 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 600 V RRM VJ I reverse current, drain current V = 6 0 0 V T = 25°C 100 µA R R VJ V = 6 0 0 V T = 1 5 0 °C 0.5 mA R VJ V forward voltage drop I = 1 5 A T = 25°C 2.03 V F F VJ I = 3 0 A 2.24 V F I = 1 5 A T = 1 5 0 °C 1.34 V F VJ I = 3 0 A 1.57 V F I average forward current T = 1 4 0 °C T = 1 7 5 °C 15 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.99 V F0 VJ for power loss calculation only r slope resistance 14.3 mΩ F R thermal resistance junction to case 1.6 K/W thJC R thermal resistance case to heatsink 0.25 K/W thCH P total power dissipation T = 25°C 95 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 110 A FSM R VJ C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 12 pF J R VJ I max. reverse recovery current T = 25°C 5 A RM VJ I = 15A; V = 300V T =100°C 7 A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 35 ns rr F VJ T =100°C 95 ns VJ E non-repetitive avalanche energy I = 1 A L =180 µH T = 25°C 0.1 mJ AS AS VJ I repetitive avalanche current V =1.5·V typ.:f = 10 kHz 0.1 A AR A R IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b ©2013 IXYS all rights reserved

DSEC30-06A Package TO-247 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 1) 50 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 6 g M mounting torque 0.8 1.2 Nm D F mounting force with clip 20 120 N C Product Marking Logo IXYS PartNo. XXXXXXXXX AssemblyLine Zyyww abcd AssemblyCode DateCode Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSEC30-06A DSEC30-06A Tube 30 473502 Similar Part Package Voltage class DSEC30-06B TO-247AD (3) 600 DSEC29-06AC ISOPLUS220AB (3) 600 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Fast 0 0 Diode V threshold voltage 0.99 V 0 max R slope resistance * 11.7 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b ©2013 IXYS all rights reserved

DSEC30-06A Outlines TO-247 A D2 E A2 ØP Ø P1 Q S Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 D1 A1 0.087 0.102 2.21 2.59 D A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 2x E2 E 0.610 0.640 15.48 16.24 4 E2 0.170 0.216 4.31 5.48 e 0.215BSC 5.46BSC 1 2 3 L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 L1 E1 ØP 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242BSC 6.14BSC L b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 2x b2 C D1 0.515 - 13.07 - 3x b D2 0.020 0.053 0.51 1.35 b4 A1 E1 0.530 - 13.45 - 2x e ØP1 - 0.29 - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b ©2013 IXYS all rights reserved

DSEC30-06A Fast Diode 40 2000 40 TVJ=100°C TVJ=100°C VR =300V VR =300V T =150°C VJ 30 100°C 1500 30 25°C I =30A F IF Qr I =30A IRM 71.55AA 20 1000 F 20 15A [A] [μC] 7.5A [A] 10 500 10 0 0 0 0 1 2 100 1000 0 200 400 600 800 1000 VF [V] -diF/dt [A/μs] -diF/dt [A/μs] Fig.1 Forwardcurrent Fig.2 Typ.reverserecov.charge Fig.3 Typ.peakreversecurrent I versusV Q versus-di /dt I versus -di /dt F F r F RM F 2.0 120 20 1.6 T =100°C T =100°C VJ VJ V =300V V I = 15A R F 110 1.5 15 1.2 t t 100 IF=30A VFR rr rr 15A K 1.0 10 0.8 f 7.5A [ns] [V] 90 I [μs] RM 0.5 5 0.4 Qr 80 VFR trr 0.0 70 0 0.0 0 40 80 120 160 0 200 400 600 800 1000 0 200 400 600 800 1000 T [°C] -di /dt [A/μs] -di /dt [A/μs] VJ F F Fig.4 Dynamicparameters Fig.5 Typ.recoverytime Fig.6 Typ.peakforwardvoltage Q,I versusT t versus-di /dt V andt versusdi /dt r RM VJ rr F FR fr F 10 Constants forZ calculation: thJC 1 i R (K/W) t (s) thi i Z thJC 1 0.908 0.0052 0.1 2 0.350 0.0003 [K/W] 3 0.342 0.017 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t [s] Fig.7 Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131120b ©2013 IXYS all rights reserved