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DSA30C150PB产品简介:
ICGOO电子元器件商城为您提供DSA30C150PB由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供DSA30C150PB价格参考¥10.20-¥26.10以及IXYSDSA30C150PB封装/规格参数等产品信息。 你可以下载DSA30C150PB参考资料、Datasheet数据手册功能说明书, 资料中有DSA30C150PB详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE SCHOTTKY 150V 15A TO220肖特基二极管与整流器 30 Amps 150V |
产品分类 | 二极管,整流器 - 阵列分离式半导体 |
品牌 | IXYS |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,肖特基二极管与整流器,IXYS DSA30C150PB- |
数据手册 | |
产品型号 | DSA30C150PB |
不同If时的电压-正向(Vf) | 890mV @ 15A |
不同 Vr时的电流-反向漏电流 | 500µA @ 150V |
二极管类型 | |
二极管配置 | 1 对共阴极 |
产品 | Schottky Diodes |
产品种类 | 肖特基二极管与整流器 |
供应商器件封装 | TO-220AB |
包装 | 管件 |
单位重量 | 2.300 g |
反向恢复时间(trr) | - |
商标 | IXYS |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-3 |
封装/箱体 | TO-220-3 |
峰值反向电压 | 150 V |
工作温度范围 | - 55 C to + 150 C |
工厂包装数量 | 50 |
技术 | Silicon |
最大功率耗散 | 85 W |
最大反向漏泄电流 | 2.5 mA |
最大工作温度 | + 150 C |
最大浪涌电流 | 330 A |
最小工作温度 | - 55 C |
标准包装 | 50 |
正向电压下降 | 0.75 V |
正向连续电流 | 15 A |
热阻 | 0.5°C/W Cs |
电压-DC反向(Vr)(最大值) | 150V |
电流-平均整流(Io)(每二极管) | 15A |
系列 | DSA30C150 |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Dual Common Cathode |
DSA30C150PB preliminary Schottky Diode Gen ² V = 150V RRM I =2x 15A FAV V = 0.75V F High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Rectifiers in switch mode power ● Industry standard outline ● Extremely low switching losses supplies (SMPS) ● RoHS compliant ● Low Irm values ● Free wheeling diode in low voltage ● Epoxy meets UL 94V-0 ● Improved thermal behaviour converters ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved
DSA30C150PB preliminary Schottky Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 150 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 150 V RRM VJ I reverse current, drain current V = 1 5 0 V T = 25°C 250 µA R R VJ V = 1 5 0 V T = 1 2 5 °C 2.5 mA R VJ V forward voltage drop I = 1 5 A T = 25°C 0.89 V F F VJ I = 3 0 A 1.02 V F I = 1 5 A T = 1 2 5 °C 0.75 V F VJ I = 3 0 A 0.89 V F I average forward current T = 1 5 5 °C T = 1 7 5 °C 15 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.55 V F0 VJ for power loss calculation only r slope resistance 8.8 mΩ F R thermal resistance junction to case 1.75 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 85 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 330 A FSM R VJ C junction capacitance V = 2 4 V f = 1 MHz T = 25°C 82 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved
DSA30C150PB preliminary Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 1) 35 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part number D= Diode S= Schottky Diode A= low VF 30= Current Rating [A] C= Common Cathode 150= Reverse Voltage [V] Part Number XXXXXX PB = TO-220AB (3) Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSA30C150PB DSA30C150PB Tube 50 505443 Similar Part Package Voltage class DSA30C150HB TO-247AD (3) 150 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Schottky 0 0 V threshold voltage 0.55 V 0 max R slope resistance * 5.6 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved
DSA30C150PB preliminary Outlines TO-220 Dim. Millimeter Inches Min. Max. Min. Max. A A 4.32 4.82 0.170 0.190 A1 E Q A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 1 b 0.64 1.01 0.025 0.040 ØP H 4 b2 1.15 1.65 0.045 0.065 D C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 1 2 3 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC 1 3x b2 L H1 5.85 6.85 0.230 0.270 L L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 3x b C Q 2.54 3.18 0.100 0.125 2x e A2 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved
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