图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: DSA30C150PB
  • 制造商: IXYS
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

DSA30C150PB产品简介:

ICGOO电子元器件商城为您提供DSA30C150PB由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供DSA30C150PB价格参考¥10.20-¥26.10以及IXYSDSA30C150PB封装/规格参数等产品信息。 你可以下载DSA30C150PB参考资料、Datasheet数据手册功能说明书, 资料中有DSA30C150PB详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 150V 15A TO220肖特基二极管与整流器 30 Amps 150V

产品分类

二极管,整流器 - 阵列分离式半导体

品牌

IXYS

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,IXYS DSA30C150PB-

数据手册

点击此处下载产品Datasheet

产品型号

DSA30C150PB

不同If时的电压-正向(Vf)

890mV @ 15A

不同 Vr时的电流-反向漏电流

500µA @ 150V

二极管类型

肖特基

二极管配置

1 对共阴极

产品

Schottky Diodes

产品种类

肖特基二极管与整流器

供应商器件封装

TO-220AB

包装

管件

单位重量

2.300 g

反向恢复时间(trr)

-

商标

IXYS

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

峰值反向电压

150 V

工作温度范围

- 55 C to + 150 C

工厂包装数量

50

技术

Silicon

最大功率耗散

85 W

最大反向漏泄电流

2.5 mA

最大工作温度

+ 150 C

最大浪涌电流

330 A

最小工作温度

- 55 C

标准包装

50

正向电压下降

0.75 V

正向连续电流

15 A

热阻

0.5°C/W Cs

电压-DC反向(Vr)(最大值)

150V

电流-平均整流(Io)(每二极管)

15A

系列

DSA30C150

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Dual Common Cathode

推荐商品

型号:SN65LVDS20DRFTG4

品牌:Texas Instruments

产品名称:集成电路(IC)

获取报价

型号:0603ZA330KAT2A

品牌:AVX Corporation

产品名称:电容器

获取报价

型号:TPS75525KC

品牌:Texas Instruments

产品名称:集成电路(IC)

获取报价

型号:S24SE150R6NDFA

品牌:Delta Electronics

产品名称:电源 - 板安装

获取报价

型号:R5F562T6BDFF#V1

品牌:Renesas Electronics America

产品名称:集成电路(IC)

获取报价

型号:RN65E2500BB14

品牌:Vishay Dale

产品名称:电阻器

获取报价

型号:GCM21BR71C475KA73L

品牌:Murata Electronics North America

产品名称:电容器

获取报价

型号:DS1744W-120IND+

品牌:Maxim Integrated

产品名称:集成电路(IC)

获取报价

样品试用

万种样品免费试用

去申请
DSA30C150PB 相关产品

VJ0603A222FXJCW1BC

品牌:Vishay Vitramon

价格:¥0.80-¥2.79

5P49EE602NLGI

品牌:IDT, Integrated Device Technology Inc

价格:

LQW18AN33NJ10D

品牌:Murata Electronics North America

价格:¥0.38-¥0.55

SN74HC245DWR

品牌:Texas Instruments

价格:¥0.93-¥1.24

N320-05M

品牌:Tripp Lite

价格:¥98.30-¥139.85

AHN22324

品牌:Panasonic Electric Works

价格:

2-487406-2

品牌:TE Connectivity AMP Connectors

价格:¥0.60-¥0.60

BCX70KT116

品牌:Rohm Semiconductor

价格:¥1.91-¥2.10

PDF Datasheet 数据手册内容提取

DSA30C150PB preliminary Schottky Diode Gen ² V = 150V RRM I =2x 15A FAV V = 0.75V F High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode Part number DSA30C150PB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-220 ● Very low Vf ● Rectifiers in switch mode power ● Industry standard outline ● Extremely low switching losses supplies (SMPS) ● RoHS compliant ● Low Irm values ● Free wheeling diode in low voltage ● Epoxy meets UL 94V-0 ● Improved thermal behaviour converters ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved

DSA30C150PB preliminary Schottky Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 150 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 150 V RRM VJ I reverse current, drain current V = 1 5 0 V T = 25°C 250 µA R R VJ V = 1 5 0 V T = 1 2 5 °C 2.5 mA R VJ V forward voltage drop I = 1 5 A T = 25°C 0.89 V F F VJ I = 3 0 A 1.02 V F I = 1 5 A T = 1 2 5 °C 0.75 V F VJ I = 3 0 A 0.89 V F I average forward current T = 1 5 5 °C T = 1 7 5 °C 15 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.55 V F0 VJ for power loss calculation only r slope resistance 8.8 mΩ F R thermal resistance junction to case 1.75 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 85 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 330 A FSM R VJ C junction capacitance V = 2 4 V f = 1 MHz T = 25°C 82 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved

DSA30C150PB preliminary Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 1) 35 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part number D= Diode S= Schottky Diode A= low VF 30= Current Rating [A] C= Common Cathode 150= Reverse Voltage [V] Part Number XXXXXX PB = TO-220AB (3) Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSA30C150PB DSA30C150PB Tube 50 505443 Similar Part Package Voltage class DSA30C150HB TO-247AD (3) 150 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Schottky 0 0 V threshold voltage 0.55 V 0 max R slope resistance * 5.6 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved

DSA30C150PB preliminary Outlines TO-220 Dim. Millimeter Inches Min. Max. Min. Max. A A 4.32 4.82 0.170 0.190 A1 E Q A1 1.14 1.39 0.045 0.055 A2 2.29 2.79 0.090 0.110 1 b 0.64 1.01 0.025 0.040 ØP H 4 b2 1.15 1.65 0.045 0.065 D C 0.35 0.56 0.014 0.022 D 14.73 16.00 0.580 0.630 1 2 3 E 9.91 10.66 0.390 0.420 e 2.54 BSC 0.100 BSC 1 3x b2 L H1 5.85 6.85 0.230 0.270 L L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 ØP 3.54 4.08 0.139 0.161 3x b C Q 2.54 3.18 0.100 0.125 2x e A2 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131031a ©2013 IXYS all rights reserved

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I XYS: DSA30C150PB