DS26C32AM, DS26C32AT www.ti.com SNLS382C–JUNE1998–REVISEDAPRIL2013 DS26C32AT/DS26C32AM Quad Differential Line Receiver CheckforSamples:DS26C32AM,DS26C32AT FEATURES DESCRIPTION 1 • CMOSDesignforLowPower The DS26C32A is a quad differential line receiver 2 designed to meet the RS-422, RS-423, and Federal • ±0.2VSensitivityoverInputCommonMode Standards 1020 and 1030 for balanced and VoltageRange unbalanced digital data transmission, while retaining • TypicalPropagationDelays:19ns thelowpowercharacteristicsofCMOS. • TypicalInputhysteresis:60mV The DS26C32A has an input sensitivity of 200 mV • InputsWon'tLoadLineWhenV =0V over the common mode input voltage range of ±7V. CC The DS26C32A features internal pull-up and pull- • MeetstheRequirementsofEIAStandardRS- down resistors which prevent output oscillation on 422 unusedchannels. • TRI-STATEOutputsforConnectiontoSystem The DS26C32A provides an enable and disable Buses function common to all four receivers. It also features • AvailableinSurfaceMount TRI-STATE outputs with 6 mA source and sink • Mil-Std-883CCompliant capability. This product is pin compatible with the DS26LS32AandtheAM26LS32. LogicDiagram 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. Alltrademarksarethepropertyoftheirrespectiveowners. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©1998–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

DS26C32AM, DS26C32AT SNLS382C–JUNE1998–REVISEDAPRIL2013 www.ti.com Connection Diagrams TopView ForCompleteMilitaryProductSpecifications,refertotheappropriateSMDorMDS. Figure1. PDIPPackage SeePackageNumberD0016AorNFG0016E SeePackageNumberNAJ0020A,NFE0016AorNAD0016A TopView Figure2. 20-LeadCeramicLeadlessChipCarrier LCCCPackage Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 2 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT www.ti.com SNLS382C–JUNE1998–REVISEDAPRIL2013 Absolute Maximum Ratings(1)(2)(3) SupplyVoltage(V ) 7V CC CommonModeRange(V ) ±14V CM DifferentialInputVoltage(V ) ±14V DIFF EnableInputVoltage(V ) 7V IN StorageTemperatureRange(T ) −65°Cto+150°C STG LeadTemperature(Soldering4sec.) 260°C MaximumPowerDissipationat25°C (4) CeramicNFE0016APackage 2308mW PlasticNFG0016EPackage 1645mW SOICD0016APackage 1190mW CeramicNAJ0020APackage 2108mW CeramicNAD0016APackage 1215mW MaximumCurrentPerOutput ±25mA Thisdevicedoesnotmeet2000VESDrating.(5) (1) AbsoluteMaximumRatingsarethosevaluesbeyondwhichthesafetyofthedevicecannotbeensured.Theyarenotmeanttoimplythat thedeviceshouldbeoperatedattheselimits.Thetableof“ElectricalCharacteristics”providesconditionsforactualdeviceoperation. (2) Unlessotherwisespecified,allvoltagesarereferencedtoground. (3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityandspecifications (4) Ratingsapplytoambienttemperatureat25°C.AbovethistemperaturederateNPackage13.16mW/°C,JPackage15.38mW/°C,M Package9.52mW/°C,EPackage12.04mW/°C,andWpackage6.94mW/°C. (5) ESDRating:HBM(1.5kΩ,100pF) Inputs≥2000V Allotherpins≥1000V EIAJ(0Ω,200pF)≥350V Operating Conditions Min Max Units SupplyVoltage(V ) 4.50 5.50 V CC OperatingTemperatureRange(T ) A DS26C32AT −40 +85 °C DS26C32AM −55 +125 °C EnableInputRiseorFallTimes 500 ns DC Electrical Characteristics V =5V±10%(unlessotherwisespecified)(1) CC Parameter TestConditions Min Typ Max Units V MinimumDifferential V =V orV −200 35 +200 mV TH OUT OH OL InputVoltage −7V<V <+7V CM R InputResistance V =−7V,+7V DS26C32AT 5.0 6.8 10 kΩ IN IN (OtherInput=GND) DS26C32AM 4.5 6.8 11 kΩ I InputCurrent V =+10V, DS26C32AT +1.1 +1.5 mA IN IN OtherInput=GND DS26C32AM +1.1 +1.8 mA V =−10V, DS26C32AT −2.0 −2.5 mA IN OtherInput=GND DS26C32AM −2.0 −2.7 mA V MinimumHighLevel V =Min,V =+1V 3.8 4.2 V OH CC DIFF OutputVoltage I =−6.0mA OUT V MaximumLowLevel V =Max,V =−1V 0.2 0.3 V OL CC DIFF OutputVoltage I =6.0mA OUT V MinimumEnableHigh 2.0 V IH InputLevelVoltage V MaximumEnableLow 0.8 V IL InputLevelVoltage (1) AbsoluteMaximumRatingsarethosevaluesbeyondwhichthesafetyofthedevicecannotbeensured.Theyarenotmeanttoimplythat thedeviceshouldbeoperatedattheselimits.Thetableof“ElectricalCharacteristics”providesconditionsforactualdeviceoperation. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT SNLS382C–JUNE1998–REVISEDAPRIL2013 www.ti.com DC Electrical Characteristics (continued) V =5V±10%(unlessotherwisespecified)(1) CC Parameter TestConditions Min Typ Max Units I MaximumTRI-STATE V =V orGND, ±0.5 ±5.0 μA OZ OUT CC OutputLeakageCurrent ENABLE=V , IL ENABLE=V IH I MaximumEnableInput V =V orGND ±1.0 μA I IN CC Current I QuiescentPower V =Max, DS26C32AT 16 23 mA CC CC SupplyCurrent V =+1V DS26C32AM 16 25 mA DIF V InputHysteresis V =0V 60 mV HYST CM AC Electrical Characteristics V =5V±10% (1) CC Max Parameter TestConditions Min Typ Units DS26C32AT DS26C32AM t , PropagationDelay C =50pF 10 19 30 35 ns PLH L t InputtoOutput PHL V =2.5V DIFF V =0V CM t , OutputRiseand C =50pF 4 9 9 ns RISE L t FallTimes FALL V =2.5V DIFF V =0V CM t , PropagationDelay C =50pF 13 22 29 ns PLZ L t ENABLEtoOutput PHZ R =1000Ω L V =2.5V DIFF t , PropagationDelay C =50pF 13 23 29 ns PZL L t ENABLEtoOutput PZH R =1000Ω L V =2.5V DIFF (1) Unlessotherwisespecified,Min/Maxlimitsapplyoverrecommendedoperatingconditions.AlltypicalsaregivenforV =5VandT = CC A 25°C. Comparison Table of Switching Characteristics into “LS-Type” Load (Figure6,Figure7,andFigure8) (1) DS26C32A DS26LS32A Parameter TestConditions Units Typ Typ t InputtoOutput C =15pF 17 23 ns PLH L t 19 23 ns PHL t ENABLEtoOutput C =5pF 13 15 ns LZ L t 12 20 ns HZ t ENABLEtoOutput C =15pF 13 14 ns ZL L t 13 15 ns ZH (1) Thistableisprovidedforcomparisonpurposesonly.ThevaluesinthistablefortheDS26C32Areflecttheperformanceofthedevice, butarenottested. 4 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT www.ti.com SNLS382C–JUNE1998–REVISEDAPRIL2013 TEST AND SWITCHING WAVEFORMS Figure3. PropagationDelay C includesloadandtestjigcapacitance. L S =V fort ,andt measurements. 1 CC PZL PLZ S =Gndfort andt measurements. 1 PZH PHZ Figure4. TestCircuitforTRI-STATEOutputTests Figure5. TRI-STATEOutputEnableandDisableWaveforms AC Test Circuit and Switching Time Waveforms Figure6. LoadTestCircuitforTRI-STATEOutputsfor“LS-Type”Load Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT SNLS382C–JUNE1998–REVISEDAPRIL2013 www.ti.com Figure7. PropagationDelayfor“LS-Type”Load (1) DiagramshownforENABLElow. (2) S1andS2ofloadcircuitareclosedexceptwhereshown. (3) Pulsegeneratorforallpulses:Rate≤1.0MHz;Z =50Ω;t ≤15ns;t ≤6.0ns. O r f Figure8. EnableandDisableTimesfor“LS-Type”Load Truth Table(1) ENABLE ENABLE Input Output L H X Z AllOther V ≥V (Max) H ID TH Combinationsof V ≤V (Min) L EnableInputs ID TH Open H (1) Z=TRI-STATE TYPICAL APPLICATIONS Figure9. Two-WireBalancedSystems,RS-422 6 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT www.ti.com SNLS382C–JUNE1998–REVISEDAPRIL2013 Typical Performance Characteristics DifferentialPropagationDelay DifferentialPropagationDelay vsTemperature vsPowerSupplyVoltage Figure10. Figure11. DifferentialSkew vs DifferentialSkewvs Power Temperature SupplyVoltage Figure12. Figure13. OutputHighVoltagevs OutputHighVoltagevs OutputHighCurrent OutputHighCurrent Figure14. Figure15. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT SNLS382C–JUNE1998–REVISEDAPRIL2013 www.ti.com Typical Performance Characteristics (continued) OutputLowVoltagevs OutputLowVoltagevs OutputLowCurrent OutputLowCurrent Figure16. Figure17. InputCurrent vs InputResistancevs Power InputVoltage SupplyVoltage Figure18. Figure19. Hysteresis&Differential Hysteresis&Differential TransitionVoltagevs TransitionVoltagevs Temperature PowerSupplyVoltage Figure20. Figure21. 8 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT www.ti.com SNLS382C–JUNE1998–REVISEDAPRIL2013 Typical Performance Characteristics (continued) SupplyCurrentvs DisabledSupplyCurrentvs Temperature PowerSupplyVoltage Figure22. Figure23. SupplyCurrentvs DataRate Figure24. Copyright©1998–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS26C32AM DS26C32AT

DS26C32AM, DS26C32AT SNLS382C–JUNE1998–REVISEDAPRIL2013 www.ti.com REVISION HISTORY ChangesfromRevisionB(April2013)toRevisionC Page • ChangedlayoutofNationalDataSheettoTIformat............................................................................................................ 9 10 SubmitDocumentationFeedback Copyright©1998–2013,TexasInstrumentsIncorporated ProductFolderLinks:DS26C32AM DS26C32AT

PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) DS26C32ATM LIFEBUY SOIC D 16 48 TBD Call TI Call TI -40 to 85 DS26C32ATM DS26C32ATM/NOPB ACTIVE SOIC D 16 48 Green (RoHS CU SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM & no Sb/Br) DS26C32ATMX LIFEBUY SOIC D 16 2500 TBD Call TI Call TI -40 to 85 DS26C32ATM DS26C32ATMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS CU SN Level-1-260C-UNLIM -40 to 85 DS26C32ATM & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 23-Aug-2017 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2

PACKAGE MATERIALS INFORMATION www.ti.com 10-Aug-2018 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) DS26C32ATMX/NOPB SOIC D 16 2500 330.0 16.4 6.5 10.3 2.3 8.0 16.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 10-Aug-2018 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) DS26C32ATMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 PackMaterials-Page2

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