Doc No. TT4-EA-12547 Revision. 2 Product Standards Transistors with Built-in Resistor DRC5643T0L DRC5643T0L Silicon NPN epitaxial planar type Unit: mm For digital circuits / Muting 2.0 DRC2643T in SMini3 type package 0.3 0.13 3  Features  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant 1.252.1 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2  Marking Symbol: TU 0.9 (0.65)(0.65)  Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SMini3-F2-B JEITA SC-85  Absolute Maximum Ratings Ta = 25 C Code ― Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Internal Connection Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 600 mA R C 1 Total power dissipation PT 150 mW B Junction temperature Tj 150 °C E Operating ambient temperature Topr -40 to +85 °C Storage temperature Tstg -55 to +150 °C Resistance R1 4.7 k value Page 1 of 4 Established :2010-04-22 Revised :2014-03-14

Doc No. TT4-EA-12547 Revision. 2 Product Standards Transistors with Built-in Resistor DRC5643T0L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 30 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 μA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0 1 μA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 1 μA Forward current transfer ratio *1 hFE VCE = 5 V, IC = 50 mA 100 600 - Collector-emitter saturation voltage VCE(sat) IC = 50 mA, IB = 2.5 mA 80 mV Input resistance R1 -30% 4.7 +30% k On resistanc *2 Ron VI = 7 V, RL = 1 k,f = 1 kHz 1.4  Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Pulse Test *2 On resistance test circuit Page 2 of 4 Established :2010-04-22 Revised :2014-03-14

Doc No. TT4-EA-12547 Revision. 2 Product Standards Transistors with Built-in Resistor DRC5643T0L Technical Data ( reference ) PT - Ta IC - VCE 200 0.6 W) Ta = 25 ℃ IB = 1.4mA ssipation PT (m 110500 urrent IC (A)000...345 011...802mmmAAA er di or c 0.6mA Total pow 50 Collect00..12 00..24mmAA 0 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 Ambient temperature Ta (℃) Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 600 E VCE = 10 V e IC/IB = 20 F g o h 500 Ta = 85 ℃ 25 ℃ olta ati n v ent transfer r 340000 mitter saturatioVCE(sat) (V) 1 d curr 200 -40 ℃ ector-e 0.1 Ta = 85 ℃ 25 ℃ war 100 Coll For -40 ℃ 0 0.01 0.001 0.01 0.1 1 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V current Io (A)11..EE--0043 2T5a ℃= 85 ℃ -40 ℃ oltage VIN (V) 10 Ta = -40 ℃ 25 ℃ put ut v 1 Out1.E-05 Inp 85 ℃ 1.E-06 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 Input voltage VIN (V) Output current Io (A) Page 3 of 4 Established :2010-04-22 Revised :2014-03-14

Doc No. TT4-EA-12547 Revision. 2 Product Standards Transistors with Built-in Resistor DRC5643T0L SMini3-F2-B Unit: mm 2.0±0.2 +0.05 +0.05 0.13-0.02 0.30-0.02 3 0 1 1 . . 0 0 ± ± 5 1 2 . . 2 1 ) ° 5 1 2 ( 0 (0.65) (0.65) 05 . 0 ± 1.3±0.1 5 2 4 . 0 (5°) ) 9 4 9) 0.1 0. 8 ± ( (0. 0.9 1 . 0 o t 0  Land Pattern (Reference) (Unit: mm) 0.9 8 . 0 9 . 1 1.3 Page 4 of 4 Established :2010-04-22 Revised :2014-03-14

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