Doc No. TT4-EA-11754 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143Y0L DRC2143Y0L Silicon NPN epitaxial planar type Unit: mm For digital circuits Complementary to DRA2143Y 2.9 0.4 0.16  Features 3  High forward current transfer ratio hFE  Low collector-emitter saturation voltage Vce(sat) 58  Halogen-free / RoHS compliant 1.2. (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2  Marking Symbol: N7 1.1 (0.95)(0.95)  Packaging 1.9 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A  Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Internal Connection Collector current IC 100 mA R C Total power dissipation PT 200 mW 1 B Junction temperature Tj 150 °C R 2 Operating ambient temperature Topr -40 to +85 °C E Storage temperature Tstg -55 to +150 °C Resistance R1 4.7 k value R2 22 k  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 10 μA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 μA Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 0.5 μA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 0.4 mA Forward current transfer ratio hFE VCE = 10 V, IC = 5 mA 60 200 - Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 0.5 mA 0.25 V Vi(on) VCE = 0.2 V, IC = 5 mA 1.2 V Input voltage Vi(off) VCE = 5 V, IC = 100 μA 0.5 V Input resistance R1 -30% 4.7 +30% k Resistance ratio R1/R2 0.17 0.21 0.27 - Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established :2009-10-30 Revised :2014-03-07

Doc No. TT4-EA-11754 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143Y0L Technical Data ( reference ) PT - Ta IC - VCE 250 0.12 W) Ta = 25 °C m sipation PT ( 125000 urrent IC (A) 000..00.168 IB = 332505000 μμμAAA s c wer di 100 ector 0.04 210500 μμAA po 50 oll al C 0.02 100 μA Tot 50 μA 0 0 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 10 350 E VCE = 10 V e IC/IB = 20 F g h 300 a o olt ward current transfer rati 11225050500000 T25a °=C 85 °C -40 °C ollector-emitter saturation vVCE(sat) (V) 0.11 Ta = 85 °C 25 °C -40 °C or C F 0 0.01 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io 1.E-02 100 Vo = 5 V Vo = 0.2 V A)1.E-03 Ta = 85 °C V) o ( N ( 10 utput current I1.E-04 25 °C -40 °C put voltage VI 1 Ta = -40 °C 25 °C O1.E-05 n I 85 °C 1.E-06 0.1 0 0.2 0.4 0.6 0.8 1 1.2 0.0001 0.001 0.01 0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established :2009-10-30 Revised :2014-03-07

Doc No. TT4-EA-11754 Revision. 2 Product Standards Transistors with Built-in Resistor DRC2143Y0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 +0.10 0.16-0.06 0.40-0.05 3 55 20 23 .. .. 00 00 +- +- 0 8 5 . . 2 1 ) ° 5 ( 1 2 ) 2 5 . (0.95) (0.95) 6 0 . ± 0 4 1.9±0.1 ( 0. (10°) +0.21-0.1 +0.31-0.1 . . 1 1 1 . 0 o t 0  Land Pattern (Reference) (Unit: mm) 1.0 0 . 1 4 . 2 1.9 Page 3 of 3 Established :2009-10-30 Revised :2014-03-07

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