Doc No. TT4-EA-11723 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123Y0L DRA2123Y0L Silicon PNP epitaxial planar type Unit: mm 2.9 For digital circuit 0.4 0.16 3  Features  Low collector-emitter saturation voltage Vce(sat) 58  Halogen-free / RoHS compliant .. 12 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 1.1  Marking Symbol: L3 (0.95)(0.95)  Packaging 1.9 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic Mini3-G3-B JEITA SC-59A  Absolute Maximum Ratings Ta = 25 C Code TO-236AA/SOT-23 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC -100 mA Total power dissipation PT 200 mW R C 1 Junction temperature Tj 150 °C B R Operating ambient temperature Topr -40 to +85 °C 2 E Storage temperature Tstg -55 to +150 °C Resistance R1 2.2 k value R2 10 k  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 μA Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 μA Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -1.0 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 30 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -1.1 V Input voltage Vi(off) VCE = -5 V, IC = -100 μA -0.5 V Input resistance R1 -30% 2.2 +30% k Resistance ratio R1/R2 0.17 0.22 0.27 - Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established :2009-10-29 Revised :2014-01-22

Doc No. TT4-EA-11723 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123Y0L Technical Data ( reference ) PT - Ta IC - VCE 250 -0.12 W) Ta = 25 ℃ IB=-700 μA PT (m 200 C (A) -0.1 -600 μA ation 150 ent I -0.08 -500 μA sip urr -0.06 -400 μA wer dis 100 ctor c -0.04 -300 μA al po 50 Colle -0.02 -200 μA ot T -100 μA 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (℃) Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC 250 -10 E VCE = -10 V IC/IB = 20 F e h g ward current transfer ratio 11250500000 T25a ℃= 85 ℃ -40 ℃ ollector-emitter saturation voltaVCE(sat) (V) -0-.11 Ta = 85 ℃ 25 ℃-40 ℃ or C F 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V Ta = 85 ℃ A)-1.0E-03 V) o ( N ( -10 utput current I-1.0E-04 25 ℃ -40 ℃ put voltage VI -1 Ta = -40 ℃ 25 ℃ O-1.0E-05 n I 85 ℃ -1.0E-06 -0.1 -0 -0.5 -1 -1.5 -2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established :2009-10-29 Revised :2014-01-22

Doc No. TT4-EA-11723 Revision. 3 Product Standards Transistors with Built-in Resistor DRA2123Y0L Mini3-G3-B Unit: mm +0.20 2.90-0.05 +0.10 +0.10 0.16-0.06 0.40-0.05 3 55 20 23 .. .. 00 00 +- +- 0 8 5 . . 2 1 ) ° 5 ( 1 2 ) 2 5 . (0.95) (0.95) 6 0 . ± 0 4 1.9±0.1 ( 0. (10°) +0.21-0.1 +0.31-0.1 . . 1 1 1 . 0 o t 0  Land Pattern (Reference) (Unit: mm) 1.0 0 . 1 4 . 2 1.9 Page 3 of 3 Established :2009-10-29 Revised :2014-01-22

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