DPG60C400HB HiPerFRED² V = 400V RRM I =2x 30A FAV t = 45ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DPG60C400HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable operation supplies (SMPS) ● Soft reverse recovery for low EMI/RFI ● Uninterruptible power supplies (UPS) ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a ©2013 IXYS all rights reserved

DPG60C400HB Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 400 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 400 V RRM VJ I reverse current, drain current V = 4 0 0 V T = 25°C 1 µA R R VJ V = 4 0 0 V T = 1 5 0 °C 0.2 mA R VJ V forward voltage drop I = 3 0 A T = 25°C 1.41 V F F VJ I = 6 0 A 1.69 V F I = 3 0 A T = 1 5 0 °C 1.13 V F VJ I = 6 0 A 1.46 V F I average forward current T = 1 3 5 °C T = 1 7 5 °C 30 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.76 V F0 VJ for power loss calculation only r slope resistance 10.7 mΩ F R thermal resistance junction to case 0.95 K/W thJC R thermal resistance case to heatsink 0.25 K/W thCH P total power dissipation T = 25°C 160 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 360 A FSM R VJ C junction capacitance V = 2 0 0 V f = 1 MHz T = 25°C 39 pF J R VJ I max. reverse recovery current T = 25°C 4 A RM VJ I = 30A; V = 270V T =125°C 8.5 A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 45 ns rr F VJ T =125°C 85 ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a ©2013 IXYS all rights reserved

DPG60C400HB Package TO-247 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 1) 50 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 6 g M mounting torque 0.8 1.2 Nm D F mounting force with clip 20 120 N C Product Marking Part number D= Diode P= HiPerFRED G = extreme fast 60= Current Rating [A] C= Common Cathode 400= Reverse Voltage [V] Logo IXYS HB = TO-247AD (3) PartNo. XXXXXXXXX AssemblyLine Zyyww abcd AssemblyCode DateCode Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DPG60C400HB DPG60C400HB Tube 30 505825 Similar Part Package Voltage class DPG60C400QB TO-3P (3) 400 DPG80C400HB TO-247AD (3) 400 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Fast 0 0 Diode V threshold voltage 0.76 V 0 max R slope resistance * 8.1 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a ©2013 IXYS all rights reserved

DPG60C400HB Outlines TO-247 A D2 E A2 ØP Ø P1 Q S Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 D1 A1 0.087 0.102 2.21 2.59 D A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 2x E2 E 0.610 0.640 15.48 16.24 4 E2 0.170 0.216 4.31 5.48 e 0.215BSC 5.46BSC 1 2 3 L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 L1 E1 ØP 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242BSC 6.14BSC L b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 2x b2 C D1 0.515 - 13.07 - 3x b D2 0.020 0.053 0.51 1.35 b4 A1 E1 0.530 - 13.45 - 2x e ØP1 - 0.29 - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a ©2013 IXYS all rights reserved

DPG60C400HB Fast Diode 80 1.0 TVJ =125°C 60A 20 TVJ=125°C 60A 70 VR =270 V VR = 270 V 30A 60 0.8 30A 16 15A 50 Q IF 40 TVJ=150°C rr 0.6 IRR 15A 12 [μC] [A]30 [A] 20 0.4 8 25°C 10 0.2 4 0.0 0.4 0.8 1.2 1.6 2.0 0 200 400 600 0 200 400 600 VF [V] -diF/dt [A/μs] -diF/dt [A/μs] Fig.1 Forwardcurrent Fig.2 Typ.reverserecov.charge Fig.3 Typ.reverserecoverycurrent I versusV Q versus-di /dt I versus-di /dt F F rr F RR F 1.6 140 700 16 T =125°C T =125°C VJ t VJ V 1.4 VR = 270 V 600 fr VR =270 V FR 14 120 I = 30 A 1.2 F 500 12 1.0 100 trr tfr 400 10 Kf0.8 V FR [ns] 80 [ns]300 8 0.6 I [V] RR 15A 200 6 0.4 60 30A 0.2 Qrr 60A 100 4 0.0 40 0 2 0 40 80 120 160 0 200 400 600 0 200 400 600 TVJ [°C] -diF/dt [A/μs] -diF/dt [A/μs] Fig.4 Typ.dynamicparameters Fig.5 Typ.reverserecov.time Fig.6 Typ.forwardrecov.voltage Q ,I versusT t versus-di /dt V &timet versusdi /dt rr RR VJ rr F FR fr F 50 1.0 T =125°C 60A VJ V = 270 V R 40 0.8 30A 30 0.6 Z 15A thJC E rec [K/W] 20 0.4 [μJ] 10 0.2 0 0.0 0 200 400 600 1 10 100 1000 10000 -di /dt [A/μs] t [ms] F Fig.7 Typ.recoveryenergy Fig.8 Transientthermalimpedancejunctiontocase E versus-di /dt rec F IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131101a ©2013 IXYS all rights reserved