NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features  Low On-Resistance BVDSS RDS(ON) MAX Package TA = I+D2 5°C  Very Low Gate Threshold Voltage VGS(TH), 1.0V Max  Low Input Capacitance 1.0 @ VGS = -4.5V -600mA  Fast Switching Speed N 1.5 @ VGS = -2.5V -500mA  ESD Protected Gate -20V X1-DFN1212-3 O 2.0 @ VGS = -1.8V -400mA  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) TI 3.0 @ VGS = -1.5V -250mA  Halogen and Antimony Free. “Green” Device (Note 3) A  Qualified to AEC-Q101 Standards for High Reliability M Description R Mechanical Data O This new generation MOSFET is designed to minimize the on-state F resistance (RDS(ON)) and yet maintain superior switching performance,  Case: X1-DFN1212-3 N making it ideal for high efficiency power management applications.  Case Material: Molded Plastic. UL Flammability Classification I Rating 94V-0 E Applications  Moisture Sensitivity: Level 1 per J-STD-020 C  Terminals: NiPdAu over Copper Leadframe. Solderable per MIL- N  DC-DC Converters STD-202, Method 208 e4 A  Power Management Functions  Terminal Connections: See Diagram V  Weight: 0.005 grams (Approximate) D A Drain Gate Gate Protection Source Diode ESD PROTECTED Top View Bottom View Equivalent Circuit Pin-Out Top View Ordering Information (Note 4) Part Number Case Packaging DMP21D5UFD-7 X1-DFN1212-3 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information KP2 = Product Type Marking Code KP2 YM = Date Code Marking Y = Year (ex: E = 2017) YM M = Month (ex: 9 = September) Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMP21D5UFD 1 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 6) VGS = -4.5V SStetaatdey TTAA == ++2750°°CC ID --650000 mA ON Continuous Drain Current (Note 6) VGS = -1.8V SStetaatdey TTAA == ++2750°°CC ID --430000 mA I Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) IDM -2 A T Maximum Body Diode Continuous Current IS -800 mA A M R O F Thermal Characteristics N Characteristic Symbol Value Unit I E Total Power Dissipation (Note 5) PD 0.4 W C Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 280 °C/W N Total Power Dissipation (Note 6) PD 0.8 W A Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 140 °C/W V Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C D A Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -1mA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — --18000 nA VVDDSS == --42.05VV, ,V VGGSS == 0 0VV Gate-Source Leakage IGSS — — ±10.0 µA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) -0.5 — -1.0 V VDS = VGS, ID = -250μA — 0.7 1.0 VGS = -4.5V, ID = -100mA — 0.9 1.5 VGS = -2.5V, ID = -80mA Static Drain-Source On-Resistance RDS(ON) — 1.2 2.0  VGS = -1.8V, ID = -40mA — 1.5 3.0 VGS = -1.5V, ID = -30mA — 5 — VGS = -1.2V, ID = -1mA Forward Transfer Admittance |Yfs| — 0.7 — s VDS = -3V, ID = -100mA Diode Forward Voltage VSD — -0.75 -1.2 V VGS = 0V, IS = -330mA DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 46.1 — Output Capacitance Coss — 7.2 — pF Vf =D S1 .=0 M-1H0Vz , VGS = 0V, Reverse Transfer Capacitance Crss — 4.9 — Total Gate Charge VGS = -4.5V Qg — 0.5 — TGoattael- SGoauterc Ceh Cahrgaerg VeG S = -8V QQggs —— 00..81 —— nC VDS = -10V, ID = -250mA Gate-Drain Charge Qgd — 0.1 — Turn-On Delay Time tD(ON) — 8.5 — TTuurrnn--OOnff RDieslea yT Timime e tD(tORF F) —— 240.3.2 —— ns VRIDDL = D= - =31 00-300VmΩ,, A VR GgS = = 2 -52Ω.5,V , Turn-Off Fall Time tF — 19.2 — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP21D5UFD 2 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD 1.0 1.0 TA = 150C A) 0.8 A) 0.8 VDS = -5V TA = 85C TA = 125C NT ( NT ( TA = 25C N URRE 0.6 URRE 0.6 TA = -55C O C C N N TI RAI 0.4 RAI 0.4 A D D M -I, D -I, D R 0.2 0.2 O F N 0 0 I 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 3.0 E -VDS, DRAIN -SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE(V) C Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics N ADVA RAIN-SOURCE ON-RESISTANCE() 00111121........68246800 VGSVV =GG -SS1 .==8 V--24..55VV DRN-URCN-RTNC()AISOE OESISAERAIN-SOURCE ON-RESISTANCE ()  0001111.......4682460 TT A TTA T =A A A = 1== = 15 8 22 -0555 5°5°°°CCCC° C R,DDS(ON)00..240 R, R, D (O)DS(ON)DSN 0.20 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 -I , DRAIN SOURCE CURRENT -I , DRAIN SOURCE CURRENT (A) D D Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage Drain Current and Temperature 1.7 1.6 ) E ( 1.4 D) 1.5 NC E A OURCE RMALIZ 1.3 RESIST 11..20 SO N- AIN-E (N 1.1 E O 0.8 RC C DN R , ON)STA 0.9 SOU 0.6 RDS(RESI AIN- 0.4 ON- 0.7 , DRN)0.2 O S( 0.5 RD 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) T , JUNCTION TEMPERATURE (C) J J Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance vs.Temperature DMP21D5UFD 3 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD 1.4 1.0 )VV) (E E ( 1.2 FORMATION -V, GATTHRHDTE ESOL VOLAG V, GATE THRESHOLD VOLTAGGS(th) GS(TH) 00001.....24680 I D = -250Iµ D A = -1mA -I, SOURCE CURRENT (A)S 0000....2468 TA= 25C N - 0 0 I -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 E TJ , JUNCTION TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V) C Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current N A 100 1,000 V D F) A ANCE (p Ciss NT (nA) 100 TA = 150C T E CI R A R P U A 10 C N C Coss GE TA = 125C O A CTI AK 10 TA = 85C JUN Crss , LES , T DS TA = 25C C -I f = 1MHz 1 1 0 5 10 15 20 0 4 8 12 16 20 -V , DRAIN-SOURCE VOLTAGE (V) -V , DRAIN-SOURCE VOLTAGE(V) DS DS Fig. 9 Typical Junction Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 1 RDS(ON) PPWW ==1 10000祍s 8 Limited 7 V) DC E ( 6 A) PW = 10s G NT ( 0.1 PW = 1s OLTA 5 URRE PW =P 1W0 0=m 1s0ms CE V 4 N C PW = 1ms OUR AI S 3 -I, DRD 0.01 TJ(MAX) = 150C , GATE-GS 2 TA = 25C -V 1 Single Pulse 0.001 0 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Fig. 11 SOA, Safe Operation Area Fig. 12 Gate-Charge Characteristics DMP21D5UFD 4 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 A A3 N A1 O X1-DFN1212-3 I Seating Plane Dim Min Max Typ T A 0.47 0.53 0.50 A M D A1 0 0.05 0.02 A3 - - 0.13 R e O b 0.27 0.37 0.32 b1 0.17 0.27 0.22 F N D 1.15 1.25 1.20 b1(2x) I E 1.15 1.25 1.20 E E e - - 0.80 C L 0.25 0.35 0.30 N All Dimensions in mm A V D b L(3x) A Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1212-3 X Y Dimensions Value (in mm) Y2 (X2x1) CX 00..8402 X1 0.32 Y 0.50 Y1 Y1 0.50 (2x) Y2 1.50 C DMP21D5UFD 5 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

NOT RECOMMENDED FOR NEW DESIGN USE DMP21D6UFD DMP21D5UFD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the N application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume O all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated TI website, harmless against all damages. A Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. M Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and R hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or O indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. F N Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings I noted herein may also be covered by one or more United States, international or foreign trademarks. E This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the C final and determinative format released by Diodes Incorporated. N A LIFE SUPPORT V D Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express A written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP21D5UFD 6 of 6 December 2017 Document number: DS35931 Rev. 5 - 3 www.diodes.com © Diodes Incorporated

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