DMP2100UCB9 DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits (Typ. @ VGS = -4.5V, TA = +25°C)  LD-MOS Technology with the Lowest Figure of Merit: VDSS RDS(on) Qg Qgd ID RDS(on) = 80mΩ to Minimize On-State Losses -20V 80mΩ 3.3nC 0.6nC -4A Qg = 3.3nC for Ultra-Fast Switching  Vgs(th) = -0.7V typ. for a Low Turn-On Potential T Description  CSP with Footprint 1.5mm × 1.5mm C  Height = 0.62mm for Low Profile U This new generation MOSFET is designed to minimize the on-state  ESD = 3kV HBM Protection of Gate D O resistance (RD1D2(ON)) and yet maintain superior switching  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) R performance, making it ideal for high-efficiency power management  Halogen and Antimony Free. “Green” Device (Note 3) P applications.  Qualified to AEC-Q101 Standards for High Reliability W Applications Mechanical Data E N  Battery Management  Case: U-WLB1515-9  Load Switch  Terminal Connections: See Diagram Below  Battery Protection  Weight: 0.0018 grams (Approximate) G1 D1 D1 SS D2 D1 ESD PROTECTED TO 3kV G2 D2 D2 Top View Ordering Information (Note 4) Part Number Case Packaging DMP2100UCB9-7 U-WLB1515-9 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1515-9 6W = Product Type Marking Code 6W YM = Date Code Marking Y = Year (ex: Y = 2011) YM M = Month (ex: 9 = September) Date Code Key Year 2012 2013 2014 2015 2016 2017 2018 Code Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMP2100UCB9 1 of 6 May 2015 Document number: DS35725 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2100UCB9 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VD1D2 -20 V Gate-Source Voltage VGS -6 V Continuous Drain Current (Note 5) VGS = -4.5V SStetaatdey TTCC == ++2750°°CC ID1D2 --32..01 A T Continuous Drain Current (Note 6) VGS = -4.5V SStetaatdey TTCC == ++2750°°CC ID1D2 --43..00 A C Continuous Source Pin Current (Note 6) IS -2.0 A U Continuous Gate Clamp Current (Note 6) IG -0.4 A D Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤ 1%) ISM -15 A O Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤ 1%) IDM -28 A R Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤ 1%) IGM -6 A P W E Thermal Characteristics (@TA = +25°C, unless otherwise specified.) N Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.8 W Total Power Dissipation (Note 6) PD 1.6 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 152 °C/W Thermal Resistance, Junction to Ambient (Note 6) RθJA 65 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVD1D2 -20 — — V VGS = 0V, ID1D2 = -250μA Gate-Source Breakdown Voltage BVGSS -6.1 — — V IGS = -250μA, VD1D2 = 0V Zero Gate Voltage Drain Current @TC = +25°C IDDS — — -1 μA VD1D2 = -16V, VGS = 0V Gate-Source Leakage IGSS — — -100 nA VGS = -6V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -0.4 -0.7 -0.9 V VD1D2 = VGS, IDS = -250μA — 80 100 VGS = -4.5V, ID1D2 =- 1A Static Drain-Source On-Resistance RD1D2(ON) — 105 130 mΩ VGS = -2.5V, ID1D2 = -1A — 140 175 VGS = -1.8V, ID1D2 = -1A Forward Transfer Admittance |Yfs| — 5.3 — S VD1D2 = -10V, ID1D2 = -1A DIODE CHARACTERISTICS Diode Forward Voltage (Note 6) VSD — -0.7 -1 V VGS = 0V, ID1D2 = -1A Reverse Recovery Charge Qrr — 18 — nC Vdd = -9.5V, IF = -1A, Reverse Recovery Time trr — 34 — ns di/dt = 200A/μs DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 232 310 pF Output Capacitance Coss — 107 150 pF Vf =D 11D.20 M= H-1z0 V, VGS = 0V, Reverse Transfer Capacitance Crss — 43.5 55 pF Total Gate Charge (4.5V) Qg — 3.3 4.2 nC Gate-Source Charge Qgs — 0.3 — nC VGS = -4.5V, VD1D2 = -10V, Gate-Drain Charge Qgd — 0.6 — nC ID1D2 = -1A Gate Charge at Vth Qg(th) — 0.2 — nC Turn-On Delay Time tD(on) — 8.5 — ns Turn-On Rise Time tr — 7.0 — ns VD1D2 = -10V, VGS = -4.5V, Turn-Off Delay Time tD(off) — 47 — ns ID1D2 = -1A, RG = 30Ω, Turn-Off Fall Time tf — 28 — ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2100UCB9 2 of 6 May 2015 Document number: DS35725 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2100UCB9 5 VGS = -4.5V VGS = -2.5V 4 VDS = -5.0V T URRENT (A) 3 VGS = -1.8V VGS = -1.5V CURRENT (A) UC AIN C 2 RAIN D R D RO -I, DD 1 VGS = -1.2V -I, D TA = 150C P TA = 125C TA = 85C W TA = 25C E 0 TA = -55C N 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 -V , DRAIN -SOURCE VOLTAGE(V) -V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 1.7 0.20 ) E ( 0.18 ED) 1.5 TANC 0.16 URCE MALIZ 1.3 RESIS 0.14 AIN-SOE (NOR 1.1 CE ON- 00..1102 RC R DN U , S(ON)SISTA 0.9 N-SO 00..0068 RDRE RAI N- D 0.04 O 0.7 , N) O 0.02 S( D 0.5 R 0 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 TJ, JUNCTION TEMPERATURE (C) -VGS, GATE SOURCE VOLTAGE (V) Fig. 3 On-Resistance Variation with Temperature Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage 1.2 10 9 V) E( 1.0 8 G VOLTA 0.8 NT (A) 7 D RE 6 L R O U H 0.6 C 5 ES E R C H R 4 E T 0.4 OU T S 3 , GAH)0.2 -I, S 2 T GS( 1 V - 0 0 -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 T , AMBIENT TEMPERATURE (°C) -V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Diode Forward Voltage vs. Current DMP2100UCB9 3 of 6 May 2015 Document number: DS35725 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2100UCB9 6 f = 1MHz F) V) 5 E (p GE ( C A N T 4 TA OL CT APACI Ciss RCE V 3 C U U N O D TIO E-S 2 PRO C, JUNCT Coss V, GATGS 1 W - Crss E 0 N 0 5 10 15 20 0 1 2 3 4 -V , DRAIN-SOURCE VOLTAGE (V) Q , TOTAL GATE CHARGE (nC) DS g Fig. 7 Typical Junction Capacitance Fig. 8 Gate-Charge Characteristics 100 RDS(on) PW = 10µs Limited 10 A) T ( N E R R U 1 DC C N PW = 10s RAI PW = 1s D PW = 100ms -I, D 0.1 TJ(max) = 150°C PW = P10Wm =s 1ms TA = 25°C PW = 100µs Single Pulse DUT on 1 * MRP Board V = -6V GS 0.01 0.1 1 10 100 -V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 9 SOA, Safe Operation Area 1 E D = 0.7 C D = 0.5 N A T D = 0.3 S SI E R 0.1 L D = 0.1 D = 0.9 A M R D = 0.05 E H T T D = 0.02 N E 0.01 SI D = 0.01 N A R D = 0.005 RJA(t) = r(t) * RJA T r(t), Single Pulse RDuJtAy =C y7c0l°eC, /DW = t1/ t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIMES (sec) Fig. 10 Transient Thermal Resistance DMP2100UCB9 4 of 6 May 2015 Document number: DS35725 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2100UCB9 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D 9x-Ø b T Pin #1 ID C U-WLB1515-9 U Dim Min Max Typ D A -- 0.62 -- O e A2 -- 0.36 0.36 R A3 0.020 0.030 0.025 E P b 0.27 0.37 0.32 e D 1.47 1.50 1.49 W E 1.47 1.50 1.49 E e -- -- 0.50 N All Dimensions in mm e e A2 A3 A SEATING PLANE Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D Value Dimensions (in mm) C 0.50 C1 C1 1.00 C C2 1.00 D 0.25 C C2 DMP2100UCB9 5 of 6 May 2015 Document number: DS35725 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

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