DMP2069UFY4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • Low On-Resistance • Low Input Capacitance V(BR)DSS RDS(ON) max ID max • Fast Switching Speed TA = 25°C • Low Input/Output Leakage T 54mΩ @ VGS = -4.5V -2.5A • ESD Protected Up To 3kV • Lead Free By Design/RoHS Compliant (Note 1) C -20V • "Green" Device, Halogen and Antimony Free (Note 2) U 90mΩ @ VGS = -1.8V -1.8A • Qualified to AEC-Q101 Standards for High Reliability D O R Description and Applications Mechanical Data P W This MOSFET has been designed to minimize the on-state resistance • Case: X2-DFN2015-3 E (RDS(on)) and yet maintain superior switching performance, making it • Case Material: Molded Plastic, “Green” Molding Compound. N ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Backlighting • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable • Power Management Functions per MIL-STD-202, Method 208 • DC-DC Converters • Terminals Connections: See Diagram Below • • Weight: 0.008 grams (approximate) X2-DFN2015-3 S D G ESD PROTECTED TO 3kV Top View Bottom View Internal Schematic Ordering Information (Note 3) Part Number Case Packaging DMP2069UFY4-7 X2-DFN2015-3 3000/Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 29P = Marking Code 29P YM = Date Code Marking Y = Year (ex: W = 2009) YM M = Month (ex: 9 = September) Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 Code W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMP2069UFY4 1 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2069UFY4 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V T Continuous Drain Current (Note 4) SStetaatdey TTAA == 2750°°CC ID --22..52 A C Pulsed Drain Current (Note 5) IDM -12 A U D O R P Thermal Characteristics W E Characteristic Symbol Value Unit N Power Dissipation (Note 4) PD 0.53 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 231 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS ⎯ ⎯ -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) -0.3 -0.55 -1.0 V VDS = VGS, ID = -250μA 36 54 VGS = -4.5V, ID = -2.5A Static Drain-Source On-Resistance RDS (ON) ⎯ 46 69 mΩ VGS = -2.5V, ID = -2.2A 60 90 VGS = -1.8V, ID = -2.0A Forward Transfer Admittance |Yfs| ⎯ 8 ⎯ S VDS = -5V, ID = -2.5A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss ⎯ 214 ⎯ pF Output Capacitance Coss ⎯ 104 ⎯ pF Vf =D S1 .=0 M-1H0Vz , VGS = 0V Reverse Transfer Capacitance Crss ⎯ 25 ⎯ pF Gate Resistnace Rg ⎯ 250 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS (Note 7) Total Gate Charge Qg ⎯ 9.1 ⎯ nC Gate-Source Charge Qgs ⎯ 1.5 ⎯ nC VGS = -4.5V, VDS = -10V, ID = -4A Gate-Drain Charge Qgd ⎯ 1.7 ⎯ nC Turn-On Delay Time tD(on) ⎯ 80.4 160 ns Turn-On Rise Time tr ⎯ 155.1 210 ns VDS = -10V, VGS = -4.5V, Turn-Off Delay Time tD(off) ⎯ 688.1 1376 ns RD = 2.5Ω, RG = 3.0Ω Turn-Off Fall Time tf ⎯ 423.8 848 ns Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP2069UFY4 2 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2069UFY4 20 20 VGVSG S= =3 .45.V5V VDS = 5V VGS = 3.0V UCT N CURRENT (A) 1105 VGS = 2.5V VVGGSS == 2 1..08VV N CURRENT (A) 1105 ROD I, DRAID 5 VGS = 1.5V I, DRAID 5 P TA = 150°C W TA = 125°C TA = 85°C E VGS = 1.2V TA = 25°C 0 0 TA = -55°C N 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic 0.16 0.08 )Ω )Ω CE ( 0.14 CE ( VGS = 4.5V N N A A SIST 0.12 SIST 0.06 TA = 150°C E E N-R 0.10 VGS = 1.5V N-R TA = 125°C CE O 0.08 CE O 0.04 TA = 85°C UR VGS = 1.8V UR TA = 25°C O 0.06 O S S RAIN- 0.04 VGS = 2.5V RAIN- 0.02 TA = -55°C D VGS = 4.5V D , ON) 0.02 , N) DS( S(O R 0 RD 0 0 5 10 15 20 0 5 10 15 20 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.7 0.10 )Ω E ( D) 1.5 NC 0.08 E A R, DRAIN-SOURCE DSONRESISTANCE (NORMALIZ 011...913 VIGDS = = 1 40.A5V AIN-SOURCE ON-RESIST 00..0046 VGIDS == 52A.5VVIGDS = = 1 40.A5V ON- 0.7 VGIDS == 52A.5V , DRN0.02 O S D 0.5 R 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) T , AMBIENT TEMPERATURE (°C) A A Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature DMP2069UFY4 3 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2069UFY4 1.0 20 V) 18 E ( G 0.8 16 A LT A) VO NT ( 14 D E T OL 0.6 ID = 1mA RR 12 DUC THRESH 0.4 ID = 250µA RCE CU 108 TA = 25°C O TE OU R A S 6 P , GH) 0.2 I, S 4 T W S( E VG 2 N 0 0 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 T , AMBIENT TEMPERATURE (°C) V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current 10,000 100,000 f = 1MHz nA) 10,000 TA = 150°C F) T ( p N NCE ( 1,000 RRE 1,000 TA = 125°C A U T C CI E A G AP Ciss KA 100 TA = 85°C C A C, 100 Coss , LES S D 10 I Crss TA = 25°C 10 1 0 5 10 15 20 0 5 10 15 20 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 9 Typical Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 1 CE D = 0.7 N D = 0.5 A T S D = 0.3 SI E R 0.1 AL D = 0.1 M D = 0.9 ER D = 0.05 H NT T D = 0.02 RRθJθAJ(At )= = 2r3(t5) °*C R/WθJA E NSI 0.01 D = 0.01 P(pk) A t1 R r(t), T D = 0.005 DTJu t-y T CAy t=c2 lPe, *D R =θ JtA1(/tt2) D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 11 Transient Thermal Response DMP2069UFY4 4 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2069UFY4 Package Outline Dimensions A3 T X2-DFN2015-3 A C SEATING PLANE Dim Min Max Typ U A − 0.40 − D A1 D A1 0 0.05 0.02 O z A3 − − 0.13 b 0.20 0.30 0.25 R L d − − 0.30 P e d D 1.45 1.575 1.50 W D2 1.00 1.20 1.10 E e − − 0.50 N E E2 E 1.95 2.075 2.00 D2 E2 0.70 0.90 0.80 f − − 0.60 L 0.25 0.35 0.30 f z − − 0.125 b All Dimensions in mm Suggested Pad Layout X Y2 Dimensions Value (in mm) C 1.00 G 0.15 X1 X 0.31 Y1 X1 1.30 Y 0.50 Y1 1.00 G Y2 0.65 X Y C DMP2069UFY4 5 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMP2069UFY4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE T (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). C Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes U without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the D application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or O trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume R all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated P website, harmless against all damages. W Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. E Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and N hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com DMP2069UFY4 6 of 6 January 2012 Document number: DS31949 Rev. 5 - 2 www.diodes.com © Diodes Incorporated