DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max  Low On-Resistance V(BR)DSS RDS(ON) max TA = +25°C  Low Gate Threshold Voltage 45mΩ @ VGS = -4.5V -4.5A  Low Input Capacitance -20V 65mΩ @ VGS = -2.5V -3.8A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) T  Halogen and Antimony Free. “Green” Device (Note 3) C  Qualified to AEC-Q101 Standards for High Reliability U Description D O This new generation MOSFET is designed to minimize the on-state Mechanical Data R resistance (RDS(on)), and yet maintain superior switching performance,  Case: SOT26 P making it ideal for high-efficiency power management applications.  Case Material: Molded Plastic, “Green” Molding Compound. W UL Flammability Classification Rating 94V-0 Applications E  Moisture Sensitivity: Level 1 per J-STD-020 N  General Purpose Interfacing Switch  Terminal Connections: See Diagram  Power Management Functions  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.015 grams (Approximate) D SOT26 D 1 6 D G D 2 5 D G 3 4 S S Top View Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2066LVT-7 SOT26 3,000/Tape & Reel DMP2066LVT-13 SOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 26P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y or = Year (ex: A = 2013) M = Month (ex: 9 = September) Shanghai A/T Site Date Code Key Year 2011 2012 2013 2014 2015 2016 2017 Code Y Z A B C D E Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMP2066LVT 1 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMP2066LVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 8 V T D rain Current (Note 5) Continuous TTAA == ++2750°°CC ID --43..75 A C Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM -20 A U D Body-Diode Continuous Current (Note 5) IS -2.0 A O R P W Thermal Characteristics (@TA = +25°C, unless otherwise specified.) E Characteristic Symbol Value Units N Total Power Dissipation (Note 5) PD 1.2 W Steady State 100 Thermal Resistance, Junction to Ambient (Note 5) RθJA °C/W t<10s 74 Total Power Dissipation (Note 6) PD 1.8 W Steady State 70 Thermal Resistance, Junction to Ambient (Note 6) t<10s RθJA 46 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition STATIC PARAMETERS (Note 7) Drain-Source Breakdown Voltage BVDSS -20   V ID = -250µA, VGS = 0V Zero Gate Voltage Drain Current @ T J = +55°C (Note 8) IDSS   --110 μA VVDDSS == --1166VV,, VVGGSS == 00VV Zero Gate Voltage Drain Current @TJ = +150°C (Note 8) IDSS — — -100 μA VDS = -16V, VGS = 0V Gate-Body Leakage Current IGSS   100 nA VDS = 0V, VGS = 8V Gate Threshold Voltage VGS(th) -0.4  -1.5 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON)  2353 4655 mΩ VVGGSS == --42..55VV,, IIDD == --43..85AA Static Drain-Source On-Resistance @ TJ = +125°C (Note 8) RDS (ON)   72 mΩ VGS = -4.5V, ID = -4.5A Diode Forward Voltage VSD -0.5 -0.72 -1.4 V IS = -2.1A, VGS = 0V On State Drain Current (Note 8) ID(ON) 10 — — A VDS ≦5V, VGS = 4.5V DYNAMIC PARAMETERS (Note 8) Input Capacitance Ciss  1,496 2,990 pF Output Capacitance Coss  130 260 pF Vf =D S1 .=0 M-1H5Vz , VGS = 0V Reverse Transfer Capacitance Crss  116 230 pF Total Gate Charge QG  14.4 25 Gate-Source Charge QGS  2.6 5 nC VDS = -10V, VGS = -4.5V, ID = -4.5A Gate-Drain Charge QGD  2.7 5.5 Turn-On Delay Time td(on)  8.5 30 Rise Time tr  11 60 ns VDS = -5V, VGS = -4.5V, Turn-Off Delay Time td(off)  61 130 ID = -1A, RG = 6.0Ω Fall Time tf  25 100 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2066LVT 2 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMP2066LVT 20 20 15 15 A) A) T ( T ( N N E E R R T UR10 UR10 C C C U N N AI AI D R R O , DD 5 , DD 5 R I I P W E 0 0 N 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN -SOURCE VOLTAGE(V) VGS, GATE SOURCE VOLTAGE(V) Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics 0.08 0.05 CE() CE() VGS= 10V TA=85°C TA=125°C TA=150°C SISTAN 0.06 VGS= 1.8V SISTAN 0.04 E E R R N- VGS= 2.5V N- 0.03 O O CE 0.04 CE R R OU OU 0.02 N-S N-S TA=25°C TA=-55°C RAI 0.02 VGS= 4.5V RAI D D 0.01 R, DS(ON) 0 R, DS(ON) 0 0 5 10 15 20 0 5 10 15 20 ID, DRAIN SOURCE CURRENT ID, DRAIN CURRENT (A) Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs. Drain Current and Gate Voltage Drain Current and Temperature 1.7 0.06 E ) NC E ( TA 1.5 NC 0.05 S A RESI SIST E ON-zed)1.3 ON-RE 0.04 URCmali1.1 CE 0.03 Oor R SN U DRAIN-(0.9 AIN-SO 0.02 R, DS(ON) 0.7 , DRS(ON)0.01 D R 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature DMP2066LVT 3 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMP2066LVT 1.2 20 V) E ( 1 G 16 OLTA T (A) V 0.8 N D RE 12 L R CT E THRESHO 00..46 ID= -250µA ID= 1mA OURCE CU 8 TA= 25C U T S D GA I, S O , h) 0.2 4 R GS(t V P 0 0 W -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 E TJ, JUNCTION TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V) N Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current 100000 10000 f = 1MHz TA = 150C F) A) 10000 p T (n CE ( N N CISS E A RR 1000 CIT U A C P GE CA 1000 A N K 100 O LEA TA = 85C CTI , S UN IDS 10 C, JT COSS CRSS TA = 25C 1 100 0 5 10 15 20 0 -4 -8 -12 -16 -20 VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage Figure 10 Typical Junction Capacitance 5 V) 4 E ( G A T L O 3 V E C R U O 2 S E T A G , S 1 G V 0 0 2 4 6 8 10 12 14 16 18 Q ,TOTAL GATE CHARGE (nC) G Figure 11 Gate Charge Characteristics DMP2066LVT 4 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMP2066LVT Package Outline Dimensions TSOT26 D TSOT26 e1 Dim Min Max Typ A  1.00  T A1 0.01 0.10  C A2 0.84 0.90  U E1 E D   2.90 D E   2.80 O c L2 E1   1.60 R  b 0.30 0.45  L P e 4x1 c 0.12 0.20  W 6x b e   0.95 e1   1.90 E L 0.30 0.50 N A A2 L2   0.25 θ 0° 8° 4° A1 θ1 4° 12°  All Dimensions in mm Suggested Pad Layout TSOT26 C C Dimensions Value (in mm) C 0.950 Y1 X 0.700 Y 1.000 Y1 3.199 Y (6x) X (6x) DMP2066LVT 5 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMP2066LVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the T application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or C trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated U website, harmless against all damages. D O Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. R Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and P hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. W E Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings N noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMP2066LVT 6 of 6 February 2015 Document number: DS36578 Rev. 4 - 2 www.diodes.com © Diodes Incorporated