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  • 型号: DMN66D0LT-7
  • 制造商: Diodes Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
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DMN66D0LT-7产品简介:

ICGOO电子元器件商城为您提供DMN66D0LT-7由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 DMN66D0LT-7价格参考¥0.72-¥0.72。Diodes Inc.DMN66D0LT-7封装/规格:晶体管 - FET,MOSFET - 单, 表面贴装 N 沟道 60V 115mA(Ta) 200mW(Ta) SOT-523。您可以下载DMN66D0LT-7参考资料、Datasheet数据手册功能说明书,资料中有DMN66D0LT-7 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

MOSFET N-CH 60V 115MA SOT-523

产品分类

FET - 单

FET功能

逻辑电平门

FET类型

MOSFET N 通道,金属氧化物

品牌

Diodes Incorporated

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

DMN66D0LT-7

PCN设计/规格

点击此处下载产品Datasheet

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

RoHS指令信息

http://diodes.com/download/4349

产品系列

-

不同Id时的Vgs(th)(最大值)

2V @ 250µA

不同Vds时的输入电容(Ciss)

23pF @ 25V

不同Vgs时的栅极电荷(Qg)

-

不同 Id、Vgs时的 RdsOn(最大值)

5 欧姆 @ 115mA,10V

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

SOT-523

其它名称

DMN66D0LTDIDKR

功率-最大值

200mW

包装

Digi-Reel®

安装类型

表面贴装

封装/外壳

SOT-523

标准包装

1

漏源极电压(Vdss)

60V

电流-连续漏极(Id)(25°C时)

115mA (Ta)

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PDF Datasheet 数据手册内容提取

DMN66D0LT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT-523 • Low Gate Threshold Voltage • Case Material: Molded Plastic. UL Flammability Classification • Low Input Capacitance Rating 94V-0 • Fast Switching Speed • Moisture Sensitivity: Level 1 per J-STD-020D • Small Surface Mount Package • Terminals: Solderable per MIL-STD-202, Method 208 T • ESD Protected Gate, 1KV (HBM) • Lead Free Plating (Matte Tin Finish annealed over Alloy 42 C leadframe). U • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Terminal Connections: See Diagram D • Halogen and Antimony Free. “Green” Device (Note 3) • Marking Information: See Page 3 O • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 3 R • Weight: 0.002 grams (approximate) P W SOT-523 Drain E D N Gate Gate G S ESD PROTECTED, 1KV PDrioodteection Source TOP VIEW EQUIVALENT CIRCUIT TOP VIEW Maximum Ratings (@TA = +25°C unless otherwise specified) Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage (Note 1) Continuous VGSS ±20 V Drain Current (Note 1) Continuous 115 Continuous @ +100°C ID 73 mA Pulsed 800 Thermal Characteristics (@TA = +25°C unless otherwise specified) Characteristic Symbol Value Units Total Power Dissipation PD 200 mW Thermal Resistance, Junction to Ambient RθJA 625 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage BVDSS 60 70  V VGS = 0V, ID = 10µA Z ero Gate Voltage D rain Curre nt @@ TTCC == + +12255°°CC IDSS   510.00 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS   ±5 µA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) 1.2  2.0 V VDS = VGS, ID = 250µA S tatic Drai n-Source O n-Resista nce @@ TTJJ == + +12255°°CC RDS (ON)  33..05 65 Ω VVGGSS == 150.0VV, ,I IDD == 00..111155AA Forward Transconductance gFS 80   mS VDS = 10V, ID = 0.115A DYNAMIC CHARACTERISTICS Input Capacitance Ciss  23  pF Output Capacitance Coss  3.4  pF VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss  1.4  pF SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON)  10  ns VDD = 30V, ID = 0.115A, RL = 150Ω, Turn-Off Delay Time tD(OFF)  33  ns VGEN = 10V, RGEN = 25Ω Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DMN66D0LT 1 of 4 August 2014 Document number: DS31530 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMN66D0LT 0.6 1 VDS = 5V 0.5 Pulsed A) T 0.4 T ( N C E R U 0.3 UR 0.1 D C O N AI R 0.2 R D P I, D TA = 150°C W 0.1 TA = 85°C TA = 25°C E N TA = -55°C 0 0.01 1 2 3 4 5 V , GATE SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics 9 2.5 8 E C 2.0 R 7 U O Ω) AIN-S NCE ( 6 1.5 R A D T 5 C S TI SI TA RE 4 VGS = 5V 1.0 , SN)ON- O 3 DS( VGS = 10V 0.5 R 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 I , DRAIN-SOURCE CURRENT (A) D Fig. 3 On-Resistance vs. Drain Current & Gate Voltage 2.0 100 V) 1.9 E ( G 1.8 ID = 250µA TA F) VOL 1.7 (pE LD 1.6 NC Ciss O A SH 1.5 CIT 10 E A R P H 1.4 A T C TE 1.3 C, T A G , H) 1.2 Coss T GS( 1.1 V 1.0 1 Crss -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 TA, AMBIENT TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Typical Total Capacitance DMN66D0LT 2 of 4 August 2014 Document number: DS31530 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMN66D0LT 1 A) 0.1 T ( N TA = 150°C E T RR TA = 125°C C U U E C 0.01 TA = 85°C D C R O U O R S P , S 0.001 TA = 25°C I W TA = -55°C E N 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 7 Reverse Drain Current vs. Source-Drain Voltage Ordering Information (Note 4) Part Number Case Packaging DMN66D0LT-7 SOT-523 3000/Tape & Reel Note: 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MN1 = Product Type Marking Code MN1 Y M YM = Date Code Marking Y = Year ex: V = 2008 M = Month ex: 9 = September Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions A SOT-523 Dim Min Max Typ A 0.15 0.30 0.22 B C B 0.75 0.85 0.80 C 1.45 1.75 1.60 D   0.50 G G 0.90 1.10 1.00 H 1.50 1.70 1.60 H J 0.00 0.10 0.05 K N M KL 00..6100 00..8300 00..7252 M 0.10 0.20 0.12 J D L N 0.45 0.65 0.50 α 0° 8°  All Dimensions in mm DMN66D0LT 3 of 4 August 2014 Document number: DS31530 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMN66D0LT Suggested Pad Layout Y Dimensions Value (in mm) Z 1.8 Z X 0.4 C Y 0.51 T C 1.3 C E 0.7 U D X E O R P W IMPORTANT NOTICE E N DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com DMN66D0LT 4 of 4 August 2014 Document number: DS31530 Rev. 3 - 2 www.diodes.com © Diodes Incorporated