DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) TA = I+D2 5°C  NLo-Cwh Oannn-Reel sMisOtaSnFcEeT  Low Gate-Threshold Voltage 3.0Ω @ VGS = 10V 400mA  Low-Input Capacitance 60V 4.0Ω @ VGS = 5V 330mA  Fast Switching Speed  Small-Surface Mount Package  ESD Protected Gate, 1.2kV HBM  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state  Case: X1-DFN1006-3 resistance (R ) yet maintain superior switching performance,  Case Material: Molded Plastic, “Green” Molding Compound; DS(ON) which makes it ideal for high-efficiency power-management UL Flammability Classification Rating 94V-0 applications.  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram  Terminals: Finish—NiPdAu over Copper Leadframe;  DC-DC Converters Solderable per MIL-STD-202, Method 208 e4  Power Management Functions  Weight: 0.001 grams (Approximate)  Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Drain X1-DFN1006-3 Body Diode Gate S D Gate G Protection Source Diode ESD PROTECTED TO 1.2kV Bottom View Equivalent Circuit Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN65D8LFB-7 X1-DFN1006-3 3000/Tape & Reel DMN65D8LFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, refer to our website at http://www.diodes.com. DMN65D8LFB 1 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMN65D8LFB Marking Information X1 From date code 1527 (YYWW), X1 this changes to: Top View Top View Dot Denotes Drain Side Bar Denotes Gate and Source Side DMN65D8LFB-7 1 1 1 X X X X X X 1 1 1 X1 Top View Bar Denotes Gate and Source Side X1 = Part Marking Code DMN65D8LFB-7B 1 1 1 X X X DMN65D8LFB 2 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMN65D8LFB Maximum Ratings Characteristic Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Continuous Drain Current (Note 4) VGS = 10V SStetaatdey TTAA == ++2750°°CC ID 226100 mA Continuous Drain Current (Note 5) VGS = 10V SStetaatdey TTAA == ++2750°°CC ID 430100 mA Thermal Characteristics Characteristic Symbol Value Units Power Dissipation, @ TA = +25°C (Note 4) PD 430 mW Thermal Resistance, Junction to Ambient @TA = +25°C (Note 4) RϴJA 290 °C/W Power Dissipation, @ TA = +25°C (Note 5) PD 840 mW Thermal Resistance, Junction to Ambient @ TA = +25°C (Note 5) RϴJSA 147 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 0.1 µA VDS = 60V, VGS = 0V Gate-Body Leakage IGSS — — 10 µA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) 1.2 — 2.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) — — 34..00 Ω VVGGSS == 15V0V, I, DI D= = 0 .01.1115A5A Forward Transfer Admittance |Yfs| 80 320 — mS VDS = 10V, ID = 0.115A Diode Forward Voltage VSD — 0.7 1.2 V VGS = 0V, IS = 0.115A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Ciss — 25 — pF Output Capacitance Coss — 4.7 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss — 2.5 — pF Turn-On Delay Time tD(on) — 3.27 — ns Turn-On Rise Time tr — 3.15 — ns VDD = 30V, VGEN = 10V, Turn-Off Delay Time tD(off) — 12.025 — ns RGEN = 25Ω,ID = 0.115A Turn-Off Fall Time tf — 6.29 — ns Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single-sided. 5. Device mounted on 2” × 2” FR-4 PCB with high coverage 2oz. Copper, single-sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN65D8LFB 3 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMN65D8LFB 0.6 1 VGS=10V VGS=3.5V VDS= 5.0V TA=125C TA=150C 0.5 VGS=4.0V VGS=3.0V VGS=5.0V A) 0.4 VGS=4.5V ENT ( TA=25C R TA=-55C R 0.3 U0.1 TA=85C C N AI 0.2 VGS=2.5V DR , D I 0.1 0.0 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE Fig.1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 5 2.4 ) E ( 4.5 CE 2.2 ANC 4 TAN 2 VIDG=S1=1150mVA, T S S SI SI 3.5 E 1.8 E R R N- N- 3 Od)1.6 CE O 2.5 VGS=5V RCE malize1.4 VIDG=S1=155Vm,A OUR 2 VGS=10V SOUNor1.2 S N-( N- 1.5 AI 1 AI R R D , DDS(ON) 0.51 R, DS(ON) 00..68 R 0 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 I , DRAIN-SOURCE CURRENT (A) TJ, JUNCTION TEMPERATURE (C) D Fig. 3 Typical On-Resistance vs. Fig. 4 On-Resistance Variation with Temperature Drain Current and Gate Charge 2 50 f=1MHz V) 1.8 45 E ( F) G 1.6 p 40 OLTA 1.4 ID=1mA NCE ( 35 V A LD 1.2 CIT 30 RESHO 1 ID=250µA N CAPA 2205 CISS H 0.8 O E T CTI 15 T 0.6 N , GAGS(TH) 00..24 C, JUT150 COSS V 0 CRSS 0 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-SOURCE VOLTAGE Fig. 5 Gate Threshold Variation vs. Ambient Temperature Fig. 6 Typical Junction Capacitance DMN65D8LFB 4 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMN65D8LFB 1 TA=125°C TA=150°C TA=25°C A) T ( 0.1 N TA=85°C E RR TA=-55°C U C E C R U0.01 O S , S I 0.001 0 0.2 0.4 0.6 0.8 1 1.2 V , SOURCE-DRAIN VOLTAGE (V) SD Fig. 7 Diode Forward Voltage vs. Current Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 A A1 X1-DFN1006-3 Dim Min Max Typ Seating Plane A 0.47 0.53 0.50 A1 0.00 0.05 0.03 D b 0.10 0.20 0.15 Pin #1 ID b b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e - - 0.35 L1 0.20 0.30 0.25 E b2 e L2 0.20 0.30 0.25 L3 - - 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L2 L3 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 Y C Dimensions Value (in mm) C 0.70 Y1 G1 0.30 G2 0.20 G2 X 0.40 X1 1.10 Y 0.25 X G1 Y1 0.70 X1 DMN65D8LFB 5 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMN65D8LFB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com DMN65D8LFB 6 of 6 June 2018 Document number: DS35545 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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