DMN3030LFG   Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features V R Package ID  Low RDS(ON) – ensures on state losses are minimized (BR)DSS DS(ON) TA = +25°C  Small form factor thermally efficient package enables higher 30V 18mΩ @ VGS = 10V POWERDI 8.6A density end products 27mΩ @ VGS = 4.5V 3333-8 5.5A  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description  Lead-Free Finish; RoHS Compliant (Notes 1 & 2) T  Halogen and Antimony Free. “Green” Device (Note 3)  C This new generation MOSFET has been designed to minimize the on-  Qualified to AEC-Q101 Standards for High Reliability U state resistance (R ) and yet maintain superior switching DS(on) D performance, making it ideal for high efficiency power management O applications. Mechanical Data R P  Case: POWERDI3333-8 Applications W  Case Material: Molded Plastic, “Green” Molding Compound. E  Backlighting UL Flammability Classification Rating 94V-0 N  DC-DC Converters  Moisture Sensitivity: Level 1 per J-STD-020  Power Management Functions  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.072 grams (approximate) POWERDI3333-8 S Pin 1 1 8 S S G 2 7 3 6 D D D 4 5 D Top View Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN3030LFG-7 POWERDI3333-8 2000 / Tape & Reel DMN3030LFG-13 POWERDI3333-8 3000 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information W W N30 = Product marking code Y YYWW = Date code marking Y YY = Last digit of year (ex: 10 for 2010) WW = Week code (01 – 53) N30 DMN3030LFG 1 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

DMN3030LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V Continuous Drain Current (Note 5) VGS = 10V StS<tet1aa0tdesy TTTTAAAA ==== ++++27275050°°°°CCCC IIDD 5465....3282 AA CT Continuous Drain Current (Note 6) VGS = 10V StS<tet1aa0tdesy TTTTAAAA ==== ++++27275050°°°°CCCC IIDD 8681...1688 AA U Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 70 A D Maximum Body Diode continuous Current IS 3 A O R P Thermal Characteristics W E Characteristic Symbol Value Units N Total Power Dissipation (Note 5) TTAA == ++2750°°CC PD 00..95 W Steady state 148 Thermal Resistance, Junction to Ambient (Note 5) t<10s RJA 89 °C/W Total Power Dissipation (Note 6) TTAA == ++2750°°CC PD 21..34 W Steady state 56 Thermal Resistance, Junction to Ambient (Note 6) t<10s RJA 34 °C/W Thermal Resistance, Junction to Case (Note 6) RJC 6.9 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 — — V V = 0V, I = 250µA DSS GS D Zero Gate Voltage Drain Current T = +25°C I — — 100 nA V = 30V, V = 0V J DSS DS GS — — ±1 µA V = ±25V, V = 0V Gate-Source Leakage I GS DS GSS — — 100 nA V = ±20V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 1.2 2.1 V V = V , I = 250μA GS(th) DS GS D — 10 18 V = 10V, I = 10A Static Drain-Source On-Resistance R mΩ GS D DS (ON) — 16 27 V = 4.5V, I = 7.5A GS D Forward Transfer Admittance |Y | — 6 — S V = 5V, I = 10A fs DS D Diode Forward Voltage V — 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C — 751 — iss V = 10V, V = 0V, Output Capacitance C — 121 — pF DS GS oss f = 1.0MHz Reverse Transfer Capacitance C — 110 — rss Gate Resistance R — 1.5 — Ω V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge V = 4.5V Q — 9 — V = 4.5V, V = 15V, I =6A GS g GS DS D Total Gate Charge V = 10V Q — 17.4 — GS g nC V = 10V, V = 15V, Gate-Source Charge Q — 2.2 — GS DS gs I = 6A Gate-Drain Charge Q — 3 — D gd Turn-On Delay Time t — 2.5 — D(on) Turn-On Rise Time t — 6.6 — V = 15V, V = 10V, r ns DD GS Turn-Off Delay Time t — 19.0 — R = 6Ω, R = 1.8Ω, I = 6.7A D(off) G L D Turn-Off Fall Time t — 6.3 — f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN3030LFG 2 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

DMN3030LFG 30 30 25 25 VDS = 5.0V A) A) NT ( 20 NT ( 20 E E R R R R U 15 U 15 C C N N UCT I, DRAID10 I, DRAID10 TA = T12A5 =° C150°C TA = 85°C D 5 5 TA = 25°C O TA = -55°C R 0 0 P 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) W DS GS Fig.1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristics E N ) 0.020 ) 0.040 CE ( CE ( 0.035 VGS = 4.5V TAN 0.016 VGS = 4.5V TAN SIS SIS 0.030 TA = 150°C E E N-R 0.012 N-R 0.025 TA = 125°C O O CE CE 0.020 TA = 85°C R VGS = 10V R SOU 0.008 SOU 0.015 TA = 25°C RAIN- RAIN- 0.010 TA = -55°C D 0.004 D R, DS(ON) 0 R, DS(ON) 0.0050 0 5 10 15 20 25 30 0 5 10 15 20 25 30 I , DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A) D D Fig. 3 Typical On-Resistance vs. Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage Drain Current and Temperature 1.6 ) 0.040 ED) 1.4 VIGDS = = 1 010AV TANCE ( 0.035 AIN-SOURCE E (NORMALIZ 1.2 VGIDS == 54A.5V CE ON-RESIS 000...000223050 VGIDS == 54A.5V RC R DN U , S(ON)SISTA 1.0 N-SO 0.015 RDON-RE 0.8 , DRAION) 00..000150 VIGDS = = 1 100AV S( D 0.6 R 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (C) T, JUNCTION TEMPERATURE (C) J J Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature DMN3030LFG 3 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

DMN3030LFG 2.0 30 V) 1.8 E ( 25 AG 1.6 ID = 1mA LT A) D VO 1.4 ID = 250µA ENT ( 20 L 1.2 R O R H U RES 1.0 E C 15 TA = 25°C T TH 0.8 RC C E OU 10 U GAT 0.6 , SS OD , S(th) 0.4 I 5 G R V 0.2 P 0 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 W TJ, JUNCTION TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V) E Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current N 10,000 10 V) F) E ( 8 VDS = 15V E (p TAG ID = 6A C L N1,000 O A V CIT Ciss LD 6 A O P H A S C E N R 4 CTIO 100 Coss E TH N Crss AT U G C, JT ,GS 2 V f = 1MHz 10 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Fig. 9 Typical Junction Capacitance Fig. 10 Gate Charge 400 100 RDS(on) Limited WER (W) 330500 SRRTJin JJ-gAA Tl (e=tA) P =1=u 4 rPl8(st )e* C* R /RWJJAA(t) A) 10 PW = 10µs OI T ( P 250 N ENT RRE DC SI 200 CU 1 PW = 10s AN N PW = 1s TR 150 RAI PW = 100ms K D PW = 10ms PEA 100 I, D0.1 TJ(max) = 150°C PWP W= 1=m 1s00µs , K) TA = 25°C P(P 50 VGS = 10V Single Pulse DUT on 1 * MRP Board 0 0.01 1E-051E-040.001 0.01 0.1 1 10 100 1,000 0.1 1 10 100 t1, PULSE DURATION TIME (sec) V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 11 Single Pulse Maximum Power Dissipation Fig. 12 SOA, Safe Operation Area DMN3030LFG 4 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

DMN3030LFG 1 D = 0.9 D = 0.7 E C D = 0.5 N TA D = 0.3 S SI RE 0.1 L D = 0.1 A M R E H T T N T E 0.01 C NSI U A R (t) = r(t) * R R JA JA D T R = 148°C/W O r(t), DuJtAy Cycle, D = t1/ t2 R 0.001 P 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) W Fig. 13 Transient Thermal Resistance E N Package Outline Dimensions POWERDI®3333-8 A Dim Min Max Typ A3 D 3.25 3.35 3.30 A1 E 3.25 3.35 3.30 D D2 2.22 2.32 2.27 D2 E2 1.56 1.66 1.61 L A 0.75 0.85 0.80 (4x) A1 0 0.05 0.02 1 4 Pin 1 ID A3   0.203 b 0.27 0.37 0.32 b2 b2   0.20 E (4x) L 0.35 0.45 0.40 E2 L1   0.39 8 5 e   0.65 L1 Z   0.515 (3x) All Dimensions in mm Z (4x) e b (8x) Suggested Pad Layout X G Dimensions Value (in mm) C 0.650 8 5 G 0.230 Y2 G1 Y1 G1 0.420 Y 3.700 Y Y1 2.250 Y2 1.850 1 4 Y3 0.700 Y3 X 2.370 X2 0.420 X2 C DMN3030LFG 5 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

DMN3030LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated T website, harmless against all damages. C U Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and D hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or O indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. R P Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. W E This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the N final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMN3030LFG 6 of 6 March 2013 Document number: DS35499 Rev. 5 - 2 www.diodes.com © Diodes Incorporated POWERDI is a registered trademark of Diodes Incorporated.

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