DMN3010LFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features ID  Low RDS(ON) – ensures on state losses are minimized V(BR)DSS RDS(ON) TC = +25°C  Small form factor thermally efficient package enables higher 8.5mΩ @ VGS = 10V 30A density end products 30V 10.5mΩ @ VGS = 4.5V 25A  Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description  100% UIS (Avalanche) rated  100% Rg tested T This new generation MOSFET is designed to minimize the on-state  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) C resistance (RDS(ON)) and yet maintain superior switching performance,  Halogen and Antimony Free. “Green” Device (Note 3) U making it ideal for high-efficiency power management applications.  Qualified to AEC-Q101 Standards for High Reliability D O Applications Mechanical Data R P  Backlighting  Case: POWERDI3333-8 W  DC-DC Converters  Case Material: Molded Plastic, “Green” Molding Compound; E  Power Management Functions UL Flammability Classification Rating 94V-0 N  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (Approximate) D POWERDI3333-8 S Pin 1 S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging DMN3010LFG-7 Standard POWERDI3333-8 2,000/Tape & Reel DMN3010LFG-13 Standard POWERDI3333-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information PowerDI3333-8 W G10 = Product Marking Code W YYWW = Date Code Marking Y Y YY = Last Digit of Year (ex: 15 for 2015) WW = Week Code (01 – 53) G10 POWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 1 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V SStetaatdey TTAA == ++2750°°CC ID 81.15 A t<10s TTAA == ++2750°°CC ID 1141 A Continuous Drain Current (Note 6) VGS = 10V SStetaatdey TTCC == ++12050°°CC ID 3200 A Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 90 A T Avalanche Current (Note 7) L = 0.1mH IAS 12.7 A C U Avalanche Energy (Note 7) L = 0.1mH EAS 8.1 mJ D O Thermal Characteristics R P Characteristic Symbol Value Units W Total Power Dissipation (Note 5) PD 0.9 W E Steady State 137 °C/W N Thermal Resistance, Junction to Ambient (Note 5) t < 10s RθJA 90 °C/W Total Power Dissipation (Note 6) PD 2.4 W Steady State 52 °C/W Thermal Resistance, Junction to Ambient (Note 6) t < 10s RθJA 35 °C/W Total Power Dissipation (Note 6) TC = +25°C PD 26 W Thermal Resistance, Junction to Case (Note 6) RθJC 4.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA ZZeerroo GGaattee VVoollttaaggee DDrraaiinn CCuurrrreenntt TTJJ == ++2155°0C°C (Note 9) IDSS —— —— 110 0 µμAA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) 1.0 — 2.5 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) —— 68.5 180..55 mΩ VVGGSS == 14.05VV,, IIDD = = 1 186AA Diode Forward Voltage VSD — 0.75 1.0 V VGS = 0V, IS = 1A On State Drain Current (Note 9) ID(ON) 10 — — A VDS ≦5V, VGS = 4.5V DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss — 2,075 4,150 OReuvtpeurst eC Tapraancsitfaenr cCea pacitance CCorssss —— 119308 328706 pF Vf =D S1 .=0 M15HVz, VGS = 0V, Gate Resistance Rg — 2.4 5 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg — 16.1 32 TGoattael- SGoauterc Ceh Cahrgaerg (eV GS = 10V) QQggs —— 63.71 7142 nC VDS = 15V, ID = 18A Gate-Drain Charge Qgd — 5.9 12 Turn-On Delay Time tD(on) — 4.5 10 TTuurrnn--OOnff RDieslea yT Timime e tDt(or ff) —— 1391.6 3550 ns VRDL S= = 0 .1853VΩ, ,V RGGSE =N 1=0 3VΩ, , Turn-Off Fall Time tf — 10.7 21 RReevveerrssee RReeccoovveerryy TCihmaerg e Qtrrr r —— 1138..73 2377 nnCs IF=15A, di/dt=500A/µs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. UIS in production with L = 1mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. P OWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 2 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG 30.0 30 VGS = 10.0V VDS = 5.0V VGS = 5.0V VGS = 3.0V 25.0 25 VGS = 4.5V T (A) 20.0 VGS = 4.0V T (A) 20 N N E VGS = 3.5V E R R R R U 15.0 U 15 C C N VGS = 2.8V N AI AI DR 10.0 DR 10 TA = 85°C T , D , D C I I TA = 125°C TA = 25°C U 5.0 5 D VGS = 2.5V TA = 150°C O TA = -55°C 0.0 0 R 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 1 2 3 4 5 P V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS W Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics E 0.01 0.02 N ) ) E ( E ( 0.018 TANC 0.009 VGS = 4.5V TANC 0.016 VGS = 4.5V TA = 150°C S S ESI 0.008 ESI 0.014 TA = 125°C R R N- N- 0.012 TA = 85°C CE O 0.007 VGS = 10V CE O 0.01 TA = 25°C R R OU OU 0.008 N-S 0.006 N-S 0.006 TA = -55°C AI AI R R D D 0.004 , N) 0.005 , N) O O 0.002 S( S( D D R R 0.004 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 I , DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A) D D Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs. Drain Current and Gate Voltage Drain Current and Temperature 2 0.02 ) E ( 0.018 C 1.8 VGS = 4.5V N OURCE RMALIZED)1.6 ID = 5A N-RESISTA 000...000111246 VIDG =S 5=A 5.0V SO1.4 O R, DRAIN-DS(ON)RESISTANCE (N1.21 VIDG =S 1=0 1A0V RAIN-SOURCE 00..000.000681 VIDG =S 1=0 1A0V ON-0.8 , DN) 0.004 S(O 0.002 D R 0.6 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) T , JUNCTION TEMPERATURE (C) J J Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature P OWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 3 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG 2.5 30 V) E ( 2 25 G OLTA ID = 1mA T (A) 20 V N LD 1.5 RRE TA = 25°C HO CU 15 ES ID = 250µA E R 1 C H R T U 10 T TE SO C GA 0.5 I, S U , h) 5 D S(t G O V R 0 0 -50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5 P TA, AMBIENT TEMPERATURE (C) VSD, SOURCE-DRAIN VOLTAGE (V) W Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current E 10000 10 N f = 1MHz V) E (pF) Ciss AGE ( 8 NC1000 OLT A V PACIT OLD 6 VIDD =S 1=8 1A5V A H N C Coss RES 4 O H CTI 100 Crss E T N T U A J G 2 C, T GS V 10 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 35 40 V , DRAIN-SOURCE VOLTAGE (V) Q , TOTAL GATE CHARGE (nC) DS g Figure 9 Typical Junction Capacitance Figure 10 Gate Charge 100 RLiDmSit(eodn) PW = 100µs A) 10 T ( N E R DC R CU 1 PW = 10s AIN PW = 1s R D PW = 100ms I, D 0.1 TJ(max) = 150°C PW = 10ms T = 25°C A PW = 1ms V = 4.5V GS Single Pulse DUT on 1 * MRP Board 0.01 0.01 0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V) DS Figure 11 SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 4 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG 1 D = 0.9 E D = 0.7 C N D = 0.5 A ST D = 0.3 I S E R 0.1 L D = 0.1 A M R D = 0.05 E H T T D = 0.02 N E 0.01 T SI D = 0.01 C N A U TR D = 0.005 RJA (t) = r(t) * RJA OD (t), RJA = 137°C/W R r D = Single Pulse Duty Cycle, D = t1/t2 0.001 P 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 W t1, PULSE DURATION TIME (sec) E Figure 12 Transient Thermal Resistance N Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. POWERDI®3333-8 A1 A3 A Seating Plane POWERDI®3333-8 D Dim Min Max Typ L(4x) A 0.75 0.85 0.80 D2 A1 0.00 0.05 0.02 1 A3   0.203 b 0.27 0.37 0.32 Pin #1 ID b2   0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E b2(4x) E 3.25 3.35 3.30 E2 e1 E2 1.56 1.66 1.61 e   0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1   0.39 8 z(4x) b z   0.515 e L1(3x) All Dimensions in mm POWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 5 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. POWER DI®3333-8 X3 X2 8 Y1 X1 Dimensions Value (in mm) T C 0.650 Y2 C X 0.420 U X1 0.420 D X2 0.230 Y3 O X3 2.370 R Y 0.700 P Y1 1.850 Y2 2.250 W Y3 3.700 E N Y 1 X C POWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 6 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated

DMN3010LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. T Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. C Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and U hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. D O Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings R noted herein may also be covered by one or more United States, international or foreign trademarks. P This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the W final and determinative format released by Diodes Incorporated. E N LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated DMN3010LFG 7 of 7 June 2015 Document number: DS36195 Rev. 7 - 2 www.diodes.com © Diodes Incorporated