DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: TO252-3L • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. • Fast Switching Speed UL Flammability Classification Rating 94V-0 • Low Input/Output Leakage • Moisture Sensitivity: Level 1 per J-STD-020 • Lead Free By Design/RoHS Compliant (Note 1) • Terminal Connections: See Diagram Below • "Green" Device (Note 2) • Weight: 0.33 grams (approximate) • Qualified to AEC-Q101 Standards for High Reliability D D TO252-3L G D G S S Top View PIN OUT -TOP VIEW Equivalent Circuit Ordering Information (Note 3) Part Number Case Packaging DMG8880LK3-13 TO252-3L 2500 / Tape & Reel Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information G8880L = Product Type Marking Code = Manufacturer’s Marking G8880L YYWW = Date Code Marking YYWW YY = Year (ex: 09 = 2009) WW = Week (01 ~ 53) DMG8880LK3 1 of 6 December 2010 Document number: DS32052 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMG8880LK3 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 4) VGS = 10V SStetaatdey TTAA == 2855°°CC ID 181 A Continuous Drain Current (Note 5) VGS = 10V SStetaatdey TTAA == 2855°°CC ID 1162.5 A Pulsed Drain Current (Note 6) IDM 48 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) PD 1.68 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) RθJA 74.3 °C/W Power Dissipation (Note 5) PD 4.1 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) RθJA 30.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.2 1.5 2.3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS (ON) - 58 71.25 mΩ VVGGSS == 14.05VV,, I DID == 1110..67AA Forward Transfer Admittance |Yfs| - 22 - S VDS = 15V, ID = 15A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, ISD = 2.1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 1289 - pF Output Capacitance Coss - 187 - pF fV =D S1 .=0 M15HVz, VGS = 0V, Reverse Transfer Capacitance Crss - 162 - pF Gate Resistance Rg - 0.97 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at 10V Qg - 27.6 - nC VIDG =S 1=1 1.60AV,, IVgD =S 1=. 01m5VA, Total Gate Charge at 5V Qg - 14.4 - nC GGaattee--SDorauirnc eC hCahragreg e QQggds -- 34..69 -- nnCC IVDG =S 1=1 5.6VA, VDS = 15V, Turn-On Delay Time tD(on) - 7.04 - ns TTuurrnn--OOnff DRieslea yT Timime e tD(tor ff) -- 1376..5123 -- nnss VRRDGL D == = 11 .1135ΩΩV, ,I DV G=S 1 =1 .160AV, , Turn-Off Fall Time tf - 19.67 - ns Body Diode Reverse Recovery Time trr - 17.6 - ns IF = 20A, dl/dt = 500A/μs Body Diode Reverse Recovery Charge Qrr - 65.9 - nC IF = 20A, dl/dt = 500A/μs Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2oz. copper, single sided. 6. Repetitive rating, pulse width limited by junction temperature and current limited by package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG8880LK3 2 of 6 December 2010 Document number: DS32052 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMG8880LK3 50 30 VGS = 8.0V 25 VDS = 5V 40 VGS = 4.5V RENT (A)30 VGS = 3.5V ENT (A)20 R R CU UR15 DRAIN 20 VGS = 3.2V RAIN C10 TA = 150°C I, D10 VGS = 3.0V I, DD TAT =A 8=5 1°C25°C TA = 25°C 5 TA = -55°C VGS = 2.2V VGS = 2.5V 0 0 0 0.5 1.0 1.5 2.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics )Ω 0.020 )Ω 0.03 E ( E ( C C AN AN VGS = 4.5V T T S 0.015 S SI SI E E 0.02 R R N- N- O O TA = 150°C URCE 0.010 VGS = 4.5V URCE TA = 125°C SO SO TA = 85°C AIN- VGS = 8.0V AIN- 0.01 TA = 25°C DR 0.005 DR TA = -55°C , N) , N) O O S( S( D D R 0 R 0 0 10 20 30 40 50 0 5 10 15 20 25 30 I , DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A) D D Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.7 0.025 )Ω E ( C D) 1.5 N E TA 0.020 URCE MALIZ 1.3 VIGDS = = 2 100AV RESIS SOOR N- 0.015 , DRAIN-S(ON)SISTANCE (N 01..91 VIGDS = = 1 40.A5V N-SOURCE O 0.010 VIGDS = = 1 40.A5V RDRE RAI ON- 0.7 , DON) 0.005 VIGDS = = 2 100AV S( D R 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (°C) T, JUNCTION TEMPERATURE (°C) J J Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature DMG8880LK3 3 of 6 December 2010 Document number: DS32052 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMG8880LK3 2.4 20 V) 18 E ( 2.0 G 16 A VOLT 1.6 NT (A) 14 TA = 25°C OLD ID = 1mA RRE 12 H U S 1.2 C 10 RE ID = 250µA CE H R 8 E T 0.8 OU AT S 6 G , S , TH) 0.4 I 4 S( G 2 V 0 0 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current 10,000 A) 10,000 n f = 1MHz T ( TA = 150°C N E R R 1,000 E (pF) GE CU TA = 125°C C A N K TA 1,000 Ciss EA 100 CI L A E TA = 85°C P C A R C U C, O S 10 Coss RAIN- TA = 25°C D Crss , S 100 DS 1 0 5 10 15 20 25 30 I 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 E C D = 0.7 AN D = 0.5 T S D = 0.3 SI E R L 0.1 A D = 0.1 M R D = 0.9 E D = 0.05 H T RθJA(t) = r(t) * RθJA NT D = 0.02 RθJA = 76°C/W E SI 0.01 P(pk) AN D = 0.01 t1 TR D = 0.005 t2 r(t), DTJu t-y T CAy =c leP, *D R =θ JtA1/(tt2) D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 11 Transient Thermal Response DMG8880LK3 4 of 6 December 2010 Document number: DS32052 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

DMG8880LK3 Package Outline Dimensions TO252-3L E L3 Dim Min Typ Max b3 A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 D b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 b2 e 2.286 Typ. e L4 H 9.40 9.91 10.41 b A1 H A L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a a 0° - 10° L SPELAATNINEG C2 All Dimensions in mm Suggested Pad Layout X2 Dimensions Value (in mm) Z 11.6 Y2 X1 1.5 Z X2 7.0 C Y1 2.5 Y2 7.0 Y1 C 6.9 E1 2.3 X1 E1 DMG8880LK3 5 of 6 December 2010 Document number: DS32052 Rev. 4 - 2 www.diodes.com © Diodes Incorporated

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