DMG8822UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: TSSOP-8L • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. • Fast Switching Speed UL Flammability Classification Rating 94V-0 • Low Input/Output Leakage • Moisture Sensitivity: Level 1 per J-STD-020D • Lead Free By Design/RoHS Compliant (Note 3) • Terminal Connections: See Diagram Below T • "Green" Device (Note 4) • Marking Information: See Page 4 C • Qualified to AEC-Q101 Standards for High Reliability • Ordering Information: See Page 4 U • Weight: 0.039 grams (approximate) D O R D1 D2 P W E N G1 G2 1 D D 8 2 S1 S2 7 3 S1 S2 6 4 G1 G2 5 S1 S2 TOP VIEW BOTTOM VIEW Top View Internal Schematic Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 1) SStetaatdey TTAA == 2750°°CC ID 43..99 A Pulsed Drain Current (Note 2) IDM 31 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) PD 0.87 W Thermal Resistance, Junction to Ambient @TA = 25°C RθJA 143 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. Device mounted on FR-4 PCB with minimum recommended pad layout. 2. Repetitive rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMG8822UTS 1 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

DMG8822UTS Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1.0 μA VDS = 20V, VGS = 0V T Gate-Source Leakage IGSS - - ±100 nA VGS = ±8V, VDS = 0V C ON CHARACTERISTICS (Note 5) U Gate Threshold Voltage VGS(th) 0.5 - 0.9 V VDS = VGS, ID = 250μA D 19 25 VGS = 4.5V, ID = 8.2A O Static Drain-Source On-Resistance RDS (ON) - 22 29 mΩ VGS = 2.5V, ID = 3.3A R 28 37 VGS = 1.8V, ID = 2.0A P Forward Transfer Admittance |Yfs| - 7 - S VDS = 10V, ID = 4A W Diodes Forward Voltage VSD - 0.7 0.9 V Is = 2.25A, VGS = 0V DYNAMIC CHARACTERISTICS (Note 6) E N IOnuptuptu Ct aCpaapcaitcaitnacnec e CCoissss -- 88481 -- ppFF fV =D S1 .=0 M10HVz, VGS = 0V, Reverse Transfer Capacitance Crss - 81 - pF Gate Resistance Rg - 1.24 - Ω VDS =0V, VGS = 0V, f = 1MHz SWITCHING CHARACTERISTICS Total Gate Charge Qg - 9.6 - nC GGaattee--SDorauirnc eC hCahragreg e QQggds -- 12..41 -- nnCC IVDG =S 8=. 24A.5 V , VDS = 10V, Turn-On Delay Time tD(on) - 7.8 - ns Turn-On Rise Time tr - 21.1 - ns VDD = 10V, VGS = 4.5V, Turn-Off Delay Time tD(off) - 38.6 - ns RL = 10Ω, RG = 6Ω Turn-Off Fall Time tf - 10.1 - ns Notes: 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. 30 20 VGS = 4.5V VGS = 2.0V VGS = 3.5V VGS = 3.0V A) VGS = 2.8V A) 15 VDS = 5V T ( 20 VGS = 2.5V VGS = 1.8V T ( N N E E R R R R U U 10 C C N N AI AI R R I, DD10 VGS = 1.5V I, DD 5 TA T=A 1 =2 51°5C0°C TA = 85°C TA = 25°C TA = -55°C 0 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics DMG8822UTS 2 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

DMG8822UTS )Ω 0.05 )Ω 0.05 CE ( CE ( VGS = 4.5V N N STA 0.04 STA 0.04 SI SI E E T CE ON-R 0.03 VGS = 1.8V CE ON-R 0.03 TTAA == 115205°°CC UC OUR 0.02 VGS = 2.5V OUR 0.02 TA = 85°C D N-S VGS = 4.5V N-S TA = 25°C EW PRO R, DRAIDS(ON) 0.010 R, DRAIDS(ON) 0.001 TA = -55°C N 0 5 10 15 20 25 30 0 5 10 15 20 I , DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A) D D Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.7 )Ω 0.04 E ( C D) 1.5 AN E T CE LIZ SIS 0.03 VGS = 2.5V URMA 1.3 RE ID = 5A DRAIN-SONCE (NOR 1.1 VGIDS == 52A.5V VIGDS = = 1 40.A5V URCE ON- 0.02 VIGDS = = 1 40.A5V , DS(ON)ESISTA 0.9 AIN-SO RR R 0.01 N- D O 0.7 , N) O S( D R 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T, JUNCTION TEMPERATURE (°C) T, JUNCTION TEMPERATURE (°C) J J Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature 1.2 20 V) E ( 18 G 1.0 A 16 T OL A) V T ( 14 D 0.8 N L E O R 12 ESH 0.6 ID = 1mA CUR 10 TA = 25°C R E H C E T ID = 250µA UR 8 T 0.4 O GA S 6 , S(TH) 0.2 I, S 4 G V 2 0 0 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current DMG8822UTS 3 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

DMG8822UTS 10,000 A) 10,000 f = 1MHz NT (n TA = 150°C E R R pF) CU 1,000 TA = 125°C E ( 1,000 E C G N Ciss A A K T T A UC APACI CE LE 100 TA = 85°C D C Coss R O C, 100 OU R Crss N-S 10 P AI TA = 25°C R D W , S E 10 DS 1 I N 0 5 10 15 20 2 4 6 8 10 12 14 16 18 20 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 9 Typical Capacitance Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage 1 E D = 0.7 C N D = 0.5 A T D = 0.3 S SI E R 0.1 L D = 0.1 A M D = 0.9 R D = 0.05 E H T RθJA(t) = r(t) * RθJA NT D = 0.02 RθJA = 141°C/W E 0.01 SI D = 0.01 P(pk) AN t1 TR D = 0.005 t2 r(t), DTJu t-y T CAy =c lPe, *D R =θ JtA1(/tt2) D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number Case Packaging DMG8822UTS-13 TSSOP-8L 2500 / Tape & Reel Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 8 5 Logo N8822U Part no YY WW Xth week: 01~52 Year: “09” = 2009 1 4 Top View DMG8822UTS 4 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

DMG8822UTS Package Outline Dimensions D TSSOP-8L Dim Min Max Typ T a 0.09 − − C See Detail C A − 1.20 − U E A1 0.05 0.15 − D E1 A2 0.825 1.025 0.925 O b 0.19 0.30 − R c 0.09 0.20 − P D 2.90 3.10 3.025 e − − 0.65 W e c E − − 6.40 E b E1 4.30 4.50 4.425 Gauge plane N L 0.45 0.75 0.60 A A2 a All Dimensions in mm L D A1 Detail C Suggested Pad Layout Y Dimensions Value (in mm) X 0.45 X Y 1.78 C1 7.72 C3 C1 C2 0.65 C2 C3 4.16 G G 0.20 DMG8822UTS 5 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

DMG8822UTS IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). T Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes C without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or U trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume D all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated O website, harmless against all damages. R P Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and W hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or E indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. N Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG8822UTS 6 of 6 June 2009 Document number: DS31798 Rev. 2 - 2 www.diodes.com © Diodes Incorporated

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