DMG5802LFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) TA = I+D2 5°C  LLooww OInnp-uRt eCsaisptaacnictaen ce 15mΩ @ VGS = 4.5V 6.5A  Fast Switching Speed 24V  Low Input/Output Leakage 20mΩ @ VGS = 2.5V 5.6A  ESD Protected up to 3kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management Mechanical Data applications.  Case: W-DFN5020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Applications Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  DC-DC Converters  Terminal Connections: See Diagram Below  Power management functions  Weight: 0.03 grams (approximate) G1S1S1 W-DFN5020-6 D1 D2 D1/D2 G1 G2 S1 S2 G2S2S2 E SD PROTECTED TO 3kV Top View Bottom View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMG5802LFX-7 W-DFN5020-6 3000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information M ME = Product Type Marking Code E YM = Date Code Marking Y = Year (ex: X = 2010) YM M = Month (ex: 9 = September) Date Code Key Year 2010 2011 2012 2013 2014 2015 2016 2017 2018 Code X Y Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMG5802LFX 1 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMG5802LFX Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 24 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 4.5V SStetaatdey TTAA == ++2750°°CC ID 65..52 A Continuous Drain Current (Note 5) VGS = 2.5V SStetaatdey TTAA == ++2750°°CC ID 54..65 A Pulsed Drain Current (Note 6) IDM 70 A Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 5) PD 0.98 W Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) RθJA 126.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 24 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 0.6 0.9 1.5 V VDS = VGS, ID = 250μA — 11 15 VGS = 4.5V, ID = 6.5A Static Drain-Source On-Resistance RDS (ON) —— 1123 1178 mΩ VVGGSS == 34.V1,V I,D I=D =5 .56.A6 A — 14 20 VGS = 2.5V, ID = 5.6A Forward Transfer Admittance |Yfs| — 17 — S VDS = 5V, ID = 6.5A Diode Forward Voltage VSD — 0.6 0.9 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1066.4 — Output Capacitance Coss — 132.0 — pF Vf =D S1 .=0 M15HVz, VGS = 0V, Reverse Transfer Capacitance Crss — 127.1 — Gate Resistance Rg — 1.47 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge VGS = 4.5V Qg — 14.5 — VGS = 4.5V, VDS = 15V, ID = 5.8A TGGoaatttaeel-- SDGoraautiernc CeC hhCaahrrgagereg VeG S = 10V QQQgggds ——— 3231...013 ——— nC VIDG =S 5=. 81A0V , VDS = 15V, Turn-On Delay Time tD(on) — 3.69 — ns Turn-On Rise Time tr — 13.43 — ns VGS = 10V, VDS = 15V, Turn-Off Delay Time tD(off) — 32.18 — ns RL = 2.1Ω, RG = 3Ω Turn-Off Fall Time tf — 22.45 — ns Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG5802LFX 2 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMG5802LFX 20 20 VGS = 10V VGS = 4.5V VDS = 5V 16 VGS = 4.0V 16 A) VGS = 3.5V A) NT ( VGS = 3.0V NT ( E 12 E 12 R VGS = 2.5V R R R CU VGS = 2.0V CU N N AI 8 AI 8 R VGS = 1.5V R TA = 150°C D D , D , D TA = 125°C I 4 I 4 TA = 85°C TA = 25°C TA = -55°C 0 0 0 0.5 1.0 1.5 2.0 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic ) 0.05 ) 0.04 CE ( CE ( VGS = 4.5V N N TA 0.04 TA S S 0.03 SI SI E E R R N- 0.03 N- TA = 150°C O O CE CE 0.02 TA = 125°C N-SOUR 0.02 VVGGSS == 21..58VV N-SOUR TTAA == 2855°°CC DRAI 0.01 VGS = 4.5V DRAI 0.01 TA = -55°C , N) , N) O O S( S( D D R 0 R 0 0 4 8 12 16 20 0 5 10 15 20 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.6 0.04 E C CE ALIZED)1.4 VIGDS = = 2 100AV ESISTAN 0.03 RM R R, DRAIN-SOUDSONRESISTANCE (NOR11..02 VIGDS = = 1 40.A5V RAIN-SOURCE ON- 00..0012 VIGDS = = 2V 10IGD0AS V= = 1 40.A5V ON-0.8 , DN O S D R 0.6 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) T , AMBIENT TEMPERATURE (°C) A A Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature DMG5802LFX 3 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMG5802LFX 1.4 20 V) E ( 1.2 G 16 A T VOL 1.0 T (A) LD EN 12 TA = 25°C HO 0.8 ID = 1mA RR S U E C HR 0.6 ID = 250µA CE 8 T R E U , GATH) 0.4 I, SOS 4 S(T 0.2 G V 0 0 -50 -25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 TA, AMBIENT TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current 10,000 100,000 f = 1MHz nA) 10,000 TA = 150°C F) T ( p N CE ( 1,000 Ciss RRE 1,000 TA = 125°C N U TA C CI E PA Coss AG 100 C, CA 100 Crss LEAK TA = 85°C , S S ID 10 TA = 25°C 10 1 0 4 8 12 16 20 24 0 4 8 12 16 20 24 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 100 RDS(on) Limited V) VDS = 15V E ( 8 ID = 7A G A) 10 TA T ( L N O E V 6 R E R DC URC N CU 1 PW = 10s SO 4 AI PW = 1s , GATE-GS 2 -I, DRD0.1 TTJA( m=a 2x)5 =°C 15P0W°C =P 1W0 0=m P1sW0Pm W=s 1=m 1s00µs V V = 4.5V GS Single Pulse DUT on 1 * MRP Board 0 0.01 0 5 10 15 20 25 30 35 40 0.1 1 10 100 Qg, TOTAL GATE CHARGE (nC) -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Gate-Charge Characteristics Fig. 12 SOA, Safe Operation Area DMG5802LFX 4 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMG5802LFX 1 E C D = 0.7 N D = 0.5 A T S D = 0.3 SI E R 0.1 AL D = 0.1 M ER D = 0.05 D = 0.9 H T RJA(t) = r(t) * RJA NT D = 0.02 RJA = 122°C/W E SI 0.01 P(pk) AN D = 0.01 t1 TR D = 0.005 t2 r(t), DTJu t-y T CAy =c leP, *D R = JtA1(/tt2) D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 13 Transient Thermal Response Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D W-DFN5020-6 e Dim Min Max Typ A 0.75 0.85 0.80 A1 0 0.05 0.02 D2 A3   0.15 b 0.20 0.30 0.25 Pin 1 ID D 1.90 2.10 2.00 D2 1.40 1.60 1.50 E E2 e   0.50 E 4.90 5.10 5.00 E2 2.80 3.00 2.90 L 0.35 0.65 0.50 Z   0.375 L All Dimensions in mm Z b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y X C G Dimensions Value (in mm) C 0.50 X1 Y2 G 0.35 Y3 X 0.35 X2 X1 0.90 X2 1.80 Y 0.70 Y2 1.60 Y3 3.20 DMG5802LFX 5 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

DMG5802LFX IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com DMG5802LFX 6 of 6 November 2013 Document number: DS35009 Rev. 5 - 2 www.diodes.com © Diodes Incorporated

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