DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits  Features  Low collector-emitter saturation voltage V CE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: T1  Basic Part Number DRC2144E + DRA2143X (Collector-base connection)  Packaging 1: Emitter (Tr1) 4: Collecter (Tr2) DMG563H10R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) 2: Base (Tr1) 5: Base (Tr2) 3: Emitter (Tr2) Collecter (Tr1)  Absolute Maximum Ratings T = 25°C a Panasonic SMini5-F3-B Parameter Symbol Rating Unit JEITA SC-113CB Code SOT-353 Collector-base voltage (Emitter open) V 50 V CBO Tr1 Collector-emitter voltage (Base open) V 50 V CEO (B2, C1) (C2) 5 4 Collector current I 100 mA C Collector-base voltage (Emitter open) VCBO –50 V R1 Tr1 Tr2 Tr2 Collector-emitter voltage (Base open) V –50 V CEO R R Collector current I –100 mA 2 R1 2 C Total power dissipation P 150 mW 1 2 3 T (E1) (B1) (E2) Junction temperature T 150 °C j Overall R 47 kΩ 1 Operating ambient temperature T –40 to +85 °C Tr1 opr Resistance R2 47 kΩ Storage temperature Tstg –55 to +150 °C value R1 4.7 kΩ Tr2 R 10 kΩ 2 Publication date: November 2013 Ver. CED 1

DMG563H1  Electrical Characteristics T = 25°C±3°C a  Tr1 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 µA, I = 0 50 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 50 V CEO C B Collector-base cutoff current (Emitter open) I V = 50 V, I = 0 0.1 µA CBO CB E Collector-emitter cutoff current (Base open) I V = 50 V, I = 0 0.5 µA CEO CE B Emitter-base cutoff current (Collector open) I V = 6 V, I = 0 0.1 mA EBO EB C Forward current transfer ratio h V = 10 V, I = 5 mA 80  FE CE C Collector-emitter saturation voltage V I = 10 mA, I = 0.5 mA 0.25 V CE(sat) C B Input voltage (ON) V V = 0.2 V, I = 5 mA 3.6 V I(on) CE C Input voltage (OFF) V V = 5 V, I = 100 µA 0.8 V I(off) CE C Input resistance R –30% 47 +30% kΩ 1 Resistance ratio R / R 0.8 1.0 1.2  1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  Tr2 Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = –10 µA, I = 0 –50 V CBO C E Collector-emitter voltage (Base open) V I = –2 mA, I = 0 –50 V CEO C B Collector-base cutoff current (Emitter open) I V = –50 V, I = 0 – 0.1 µA CBO CB E Collector-emitter cutoff current (Base open) I V = –50 V, I = 0 – 0.5 µA CEO CE B Emitter-base cutoff current (Collector open) I V = –6 V, I = 0 –1.0 mA EBO EB C Forward current transfer ratio h V = –10 V, I = –5 mA 30  FE CE C Collector-emitter saturation voltage V I = –10 mA, I = – 0.5 mA – 0.25 V CE(sat) C B Input voltage (ON) V V = – 0.2 V, I = –5 mA –1.7 V I(on) CE C Input voltage (OFF) V V = –5 V, I = –100 µA – 0.6 V I(off) CE C Input resistance R –30% 4.7 +30% kΩ 1 Resistance ratio R / R 0.37 0.47 0.57  1 2 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Ver. CED 2

DMG563H1 Common characteristics chart DMG563H1_PT-Ta P  T T a 200 ) W m ( T150 P n o ati p100 si s di er w o al p 50 ot T 0 0 40 80 120 160 200 Ambient temperature T (°C) a Characteristics charts of Tr1 DMG563H1(Tr1)_IC-VCE DMG563H1(Tr1)_hFE-IC DMG563H1(Tr1)_VCEsat-IC I  V h  I V  I C CE FE C CE(sat) C Collector current I (mA) C11208642000000 Ta = 25°CI B = 500 µA 450 µA 33422115050055000000000 µµµµµµµµAAAAAAAA Forward current transfer ratio hFE 534210000000000 VCE = 10 V 25°C Ta =− 8450°°CC or-emitter saturation voltage V (V) CE(sat) 01.101 Ta = 85°C IC / −IB4 0=° 2C0 ct 25°C e oll 0 0 C0.01 0 2 4 6 8 10 12 0.1 1 10 100 0.1 1 10 100 Collector-emitter voltage V (V) Collector current I (mA) Collector current I (mA) CE C C DMG563H1(Tr1)_IO-VIN DMG563H1(Tr1)_VIN-IO I  V V  I O IN IN O 10 100 V = 5 V O VO = 0.2 V T = 85°C ) A 1 a V) (utput current I mO10−1 −402°5C°C nput voltage V (IN 110 25°C Ta = −8450°°CC O 10−2 I 10−3 0.1 0 0.5 1.0 1.5 2.0 0.1 1 10 100 Input voltage VIN (V) Output current IO (mA) Ver. CED 3

DMG563H1 Characteristics charts of Tr2 DMG563H1(Tr2)_IC-VCE DMG563H1(Tr2)_hFE-IC DMG563H1(Tr2)_VCEsat-IC I  V h  I V  I C CE FE C CE(sat) C Collector current I (mA) C−−−−−112086400000 Ta = 25°C IB = −800 µA −−−−−−563427000000000000 µµµµµµAAAAAA ward current transfer ratio hFE 322110505000000 25°C TVaC =E =−8 54−°01C°0C V mitter saturation voltage V (V) CE(sat)−− 0−1.101 Ta = 85°C I−C 4/ 0I°BC = 20 −20 For 50 or-e 25°C −100 µA ct e oll 0 0 C− 0.01 0 −2 −4 −6 −8 −10 −12 − 0.1 −1 −10 −100 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) DMG563H1(Tr2)_IO-VIN DMG563H1(Tr2)_VIN-IO I  V V  I O IN IN O −10 −100 V = −5 V O VO = − 0.2 V T = 85°C a ) A −1 V) (utput current I mO−10−1 25°C −40°C nput voltage V (IN−−110 25°C Ta = −8450°°CC O−10−2 I −10−3 − 0.1 0 − 0.5 −1.0 −1.5 −2.0 − 0.1 −1 −10 −100 Input voltage VIN (V) Output current IO (mA) Ver. CED 4

DMG563H1 SMini5-F3-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. CED 5

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