DMG4800LFG N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: DFN3030-8 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. • Fast Switching Speed UL Flammability Classification Rating 94V-0 • Low Input/Output Leakage • Moisture Sensitivity: Level 1 per J-STD-020 • Lead Free By Design/RoHS Compliant (Note 1) • Terminals: Finish - NiPdAu over Copper lead frame. Solderable T per MIL-STD-202, Method 208 • "Green" Device (Note 2) C • Polarity: See Diagram • Qualified to AEC-Q101 Standards for High Reliability U • Marking Information: See Page 5 D • Ordering Information: See Page 5 O • Weight: 0.0172 grams (approximate) R P W 8 7 6 5 5 6 7 8 E N D G S S S 1 2 3 4 4 3 2 1 TOP VIEW BOTTOM VIEW TOP VIEW BOTTOM VIEW Internal Schematic Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V D r a i n C u r r e n t ( N o t e 3 ) SStteaated y TTAA == 8255°°CC ID 74..4824 A Pulsed Drain Current (Note 4) IDM 40 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation (Note 3) PD 0.94 W Thermal Resistance, Junction to Ambient RθJA 133 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG4800LFG 1 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4800LFG Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA T Zero Gate Voltage Drain Current TJ = 25°C IDSS - - 1.0 μA VDS = 30V, VGS = 0V C Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 5) U D Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS = VGS, ID = 250μA RO Static Drain-Source On-Resistance RDS (ON) - 1115 1274 mΩ VVGGSS == 14.05VV,, I DID == 97AA P Forward Transfer Admittance |Yfs| - 8 - S VDS = 10V, ID = 9A Diode Forward Voltage VSD - 0.7 1.0 V VGS = 0V, IS = 1A W DYNAMIC CHARACTERISTICS (Note 6) E Input Capacitance Ciss - 798 - pF N Output Capacitance Coss - 128 - pF fV =D S1 .=0 M10HVz, VGS = 0V, Reverse Transfer Capacitance Crss - 122 - pF Gate Resistance Rg - 1.37 - Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 9.47 - nC GGaattee--SDorauirnc eC hCahragreg e QQggds -- 15..8670 -- nnCC IVDG =S 9=A 5 V , VDS = 15V, Turn-On Delay Time tD(on) - 5.03 - ns Turn-On Rise Time tr - 4.50 - ns VDD = 15V, VGEN = 10V, Turn-Off Delay Time tD(off) - 26.33 - ns RL = 15Ω, RG = 6Ω, ID = 1A Turn-Off Fall Time tf - 8.55 - ns Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to product testing. 30 30 VGS = 10V 25 VGS = 4.5V 25 VDS = 5V A) A) T ( 20 T (20 N N E E RR VGS = 3.0V RR CU 15 CU15 N N AI AI R R D 10 D10 I, D VGS = 2.5V I, D TA = 150°C 5 5 TA = 125°C TA = 85°C TA = 25°C TA = -55°C 0 VGS = 2.0V 0 0 0.5 1 1.5 2 1 1.5 2 2.5 3 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic DMG4800LFG 2 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4800LFG CE ()Ω 00..0078 CE ()Ω 0.03 VGS = 4.5V N-RESISTAN 00..0056 VGS = 2.5V N-RESISTAN 0.02 TATT AA= ==1 581052°°5CC°C RODUCT RAIN-SOURCE O 000...000234 RAIN-SOURCE O 0.01 TTAA == -2555°°CC D D P , ON)0.01 VGS = 4.5V , N) W DS( S(O E R 0 RD 0 N 0 5 10 15 20 25 30 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.8 0.03 )Ω E ( D)1.6 C 0.025 E N , DRAIN-SOURCE SONSISTANCE (NORMALIZ111...024 SOURCE ON-RESISTA 0.000..100512 VIGDS = = 1 40.A5V RDE VGS = 4.5V N- VGS = 10V N-R ID = 10A RAI ID = 11.6A O0.8 D 0.005 , N VGS = 10V SO 0.6 ID = 11.6A RD 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) T , AMBIENT TEMPERATURE (°C) A A Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature 1.6 20 V) TA = 25°C E ( G 16 TA 1.2 ID = 1mA A) OL T ( V N OLD ID = 250µA RRE12 SH 0.8 CU E E R C H R 8 T U E O T S GA 0.4 , S , H) I 4 T S( G V 0 0 -50 -25 0 25 50 75 100 125 150 0.4 0.5 0.6 0.7 0.8 0.9 1.0 T , AMBIENT TEMPERATURE (°C) V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current DMG4800LFG 3 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4800LFG 10,000 10 V) E ( 8 F) G p A E ( 1,000 LT T NC Ciss VO 6 ID = 11.6A A E UC ACIT URC ID = 9A ROD C, CAP 100 CCrsosss ATE-SO 4 G P , S 2 G W V E N 10 0 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 V , DRAIN-SOURCE VOLTAGE (V) DS Q , TOTAL GATE CHARGE (nC) G Fig. 9 Typical Total Capacitance Fig. 10 Total Gate Charge 10,000 100 TA = 150°C W) 90 A) R ( 80 Single Pulse ENT (n 1,000 TA = 125°C POWE 70 TRJRθ J-θ ATJ(AAt ) = == 1 Pr3( t*1) °R*C θR/JWθAJ(At) RR NT 60 U E E C 100 NSI 50 G A KA TR 40 EA TA = 85°C AK , LS 10 PE 30 IDS , pk) 20 TA = 25°C P( 10 1 TA = -55°C 0 0 5 10 15 20 25 30 0.0001 0.001 0.01 0.1 1 10 100 1,000 VDS, DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (s) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage Fig. 12 Single Pulse Maximum Power Dissipation 1 CE D = 0.7 N D = 0.5 A T S D = 0.3 SI E R 0.1 AL D = 0.1 M D = 0.9 ER D = 0.05 H T ENT D = 0.02 RRθJθAJ(At) = = 1r3(t1) °*C R/WθJA NSI 0.01 D = 0.01 P(pk) RA t1 T D = 0.005 r(t), TJ - TA t=2 P * RθJA(t) D = Single Pulse Duty Cycle, D = t1/t2 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 13 Transient Thermal Response DMG4800LFG 4 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4800LFG Ordering Information (Note 7) Part Number Case Packaging DMG4800LFG-7 DFN3030-8 3000/Tape & Reel Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. T C U D Marking Information O R P W DFN3030-8 E W N W N48 = Product marking code Y Y YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) N48 WW = Week code 01 to 52 Package Outline Dimensions A A3 SEATING PLANE DFN3030-8 A1 Dim Min Max Typ A 0.57 0.63 0.60 e b A1 0 0.05 0.02 R 0.2 00 A3 ⎯ ⎯ 0.15 b 0.29 0.39 0.34 D 2.90 3.10 3.00 D2 2.19 2.39 2.29 E E2 e ⎯ ⎯ 0.65 E 2.90 3.10 3.00 E2 1.64 1.84 1.74 L L 0.30 0.60 0.45 D2 All Dimensions in mm D Suggested Pad Layout Z Dimensions Value (in mm) Z 2.59 G 0.11 X1 X1 2.49 X2 0.65 Y 0.39 C 0.65 X2 G Y C DMG4800LFG 5 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4800LFG IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE T (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). C Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes U without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the D application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or O trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume R all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated P website, harmless against all damages. W Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. E Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and N hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com DMG4800LFG 6 of 6 November 2009 Document number: DS31785 Rev. 3 - 2 www.diodes.com © Diodes Incorporated