DMG4468LK3 Green N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: TO252 • Low Input Capacitance • Case Material: Molded Plastic, “Green” Molding Compound. • Fast Switching Speed UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Low Input/Output Leakage T • Terminals Connections: See Diagram C • Lead-Free Finish; RoHS Compliant (Notes 1 & 2) • Terminals: Matte Tin Finish annealed over Copper leadframe. • Halogen and Antimony Free. “Green” Device (Note 3) Solderable per MIL-STD-202, Method 208 U • Qualified to AEC-Q101 Standards for High Reliability • Marking Information: See Page 5 D • Ordering Information: See Page 5 O • Weight: 0.33 grams (approximate) R P W E D D N G D S G S TOP VIEW PIN OUT -TOP VIEW Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMG4468LK3-13 TO252 2500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information = Manufacturer’s Marking N4468L = Product Type Marking Code N4468L YYWW = Date Code Marking YYWW YY = Year (ex: 13 = 2013) WW = Week (01-52) DMG4468LK3 1 of 6 June 2013 Document number: DS31958 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4468LK3 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) SStetaatdey TTAA == ++2855°°CC ID 96..73 A T Pulsed Drain Current (Note 6) IDM 48 A C U D O R Thermal Characteristics P W Characteristic Symbol Value Unit E Power Dissipation (Note 5) PD 1.68 W N Thermal Resistance, Junction to Ambient @TA = +25°C R(cid:127)JA 74.3 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 1.0 µA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.05 - 1.95 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) - 1117 1265 mΩ VVGGSS == 14.05VV,, IIDD == 1110.A6A Forward Transfer Admittance |Yfs| - 8 - S VDS = 10V, ID = 9A Diode Forward Voltage VSD - 0.73 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 867 - pF Output Capacitance Coss - 85 - pF Vf =D S1 .=0 M15HVz, VGS = 0V, Reverse Transfer Capacitance Crss - 81 - pF Gate Resistance Rg - 1.39 - Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg - 18.85 - nC Gate-Source Charge Qgs - 2.59 - nC VI G =S 1=1 1.60AV , VDS = 15V, Gate-Drain Charge Qgd - 6.15 - nC D Turn-On Delay Time tD(on) - 5.46 - ns Turn-On Rise Time tr - 14.53 - ns VDD = 15V, VGS = 10V, Turn-Off Delay Time tD(off) - 18.84 - ns RL = 1.3Ω, RG = 3Ω Turn-Off Fall Time tf - 6.01 - ns Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMG4468LK3 2 of 6 June 2013 Document number: DS31958 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4468LK3 30 20 VDS = 5.0V 25 VGS = 10V NT (A) 20 VGS V=G 4S. 0=V 4.5V NT(A) 15 E E T R R C R VGS = 3.5V R U 15 U 10 U C C D AIN AIN TA = 150°C O R R D 10 D TA = 125°C PR I, D 5 VGS = 3.0V I, D 5 TA = 85°C TA = 25°C W TA = -55°C E N 0 VGS = 2.5V 0 0 0.5 1 1.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE SOURCE VOLTAGE(V) Fig.1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics ΩNCE () 00..003460 ΩCE () 0.05 VGS = 4.5V TA 0.032 AN 0.04 S T ESI 0.028 SIS R E ON- 0.024 N-R 0.03 TA = 150°C RCE 0.020 VGS = 4.5V CE O TA = 125°C OU 0.016 UR 0.02 TA = 85°C , DRAIN-SDS(on) 000...000001482 VGS = 10V DRAIN SODS(on) 0.01 TTAA == -2555°°CC R 0 R 0 0 5 10 15 20 25 30 0 5 10 15 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.7 0.05 1.5 E AIN-TO-SOURCE E (NORMALIZED) 11..13 C DRAIN SOURC ΩRESISTANCE () 00..0034 VIGDS = = 1 100AA R, DRDS(ON)RESISTANC 00..79 VGIDSV ==G S54 A.=5 A10A R STATIDS(ON)ON-STATE 00..0012 VGS = 4.5A ID = 10A ID = 5A 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TA AMBIENT TEMPERATURE (°C) Fig. 6 Typical Static Drain-Source On-State Resistance Fig. 5 On-Resistance Variation with Temperature vs. Ambient Temperature DMG4468LK3 3 of 6 June 2013 Document number: DS31958 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4468LK3 3.0 10,000 V) GE ( 2.5 A) LTA T (n 1,000 TA = 150°C O N V 2.0 E D RR CT HOL ID = 1mA CU TA = 125°C S 1.5 E 100 U E G D HR ID = 250µA KA T A O E 1.0 E W PR , GATTH) 0.5 I, LDSS 10 TA = 85°C S( G E V TA = 25°C N 0 1 -50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30 T , AMBIENT TEMPERATURE (°C) V , DRAIN-SOURCE VOLTAGE (V) A DS Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Typical Drain-Source Leakage Current vs Voltage 20 1,000 18 T (A) 1146 TA = 25°C NT(nA) N E 100 E R R 12 R R U U C C 10 E E G C A OUR 8 LEAK 10 TA = 85°C TA = 125°C TA = 150°C I, SS 6 , GSS 4 I TA = -55°C TA = 25°C 2 0 1 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 12 14 16 18 20 VSD, SOURCE-DRAIN VOLTAGE (V) VGS, GATE SOURCE VOLTAGE(V) Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Gate-Source Leakage Current vs. Voltage 1,000 100 90 Single Pulse W) RθJA = 77°C/W T(nA) ER ( 80 TRJθ -J AT(At) == PR θ* JRA θ*J Ar((tt)) N W 70 E 100 O R P R T 60 U N C E E SI 50 G N A A AK TA = 125°C TA = 150°C TR 40 , LES 10 TA = 85°C EAK 30 S P IG TA = -55°C TA = 25°C pk), 20 P( 10 1 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 VGS, GATE SOURCE VOLTAGE(V) t1, PULSE DURATION TIME (s) Fig. 11 Gate-Source Leakage Current vs. Voltage Fig. 12 Single Pulse Maximum Power Dissipation DMG4468LK3 4 of 6 June 2013 Document number: DS31958 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4468LK3 1 E C D = 0.7 AN D = 0.5 T S D = 0.3 SI E R L 0.1 A D = 0.1 T RM D = 0.9 C E D = 0.05 H U T RθJA(t) = r(t) * RθJA D NT D = 0.02 RθJA = 76°C/W E O SI 0.01 P(pk) R AN D = 0.01 t1 P TR D = 0.005 t2 W r(t), DTJu t-y T CAy =c lPe, *D R =θ JtA1(/tt2) E D = Single Pulse N 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 13 Transient Thermal Response Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. TO252 Dim Min Max Typ E A A 2.19 2.39 2.29 b3 c2 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 L3 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 A2 E1 D c2 0.45 0.58 0.531 H D 6.00 6.20 6.10 D1 5.21 − − e − − 2.286 E 6.45 6.70 6.58 L4 A1 E1 4.32 − − H 9.40 10.41 9.91 L L 1.40 1.78 1.59 e L3 0.88 1.27 1.08 2X b2 3X b a L4 0.64 1.02 0.83 a 0° 10° − All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Dimensions Value (in mm) Z 11.6 X1 1.5 Y2 X2 7.0 Y1 2.5 Z C Y2 7.0 C 6.9 Y1 E1 2.3 X1 E1 DMG4468LK3 5 of 6 June 2013 Document number: DS31958 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

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