DMG4466SSSL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max  Low On-Resistance V(BR)DSS RDS(ON) max TA = +25°C  Low Input Capacitance 23mΩ @ VGS = 10V 10A  Fast Switching Speed 30V 33mΩ @ VGS = 4.5V 8A  Low Input/Output Leakage  Low Gate Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description  Halogen and Antimony Free. “Green” Device (Note 3) This MOSFET has been designed to minimize the on-state resistance  Qualified to AEC-Q101 Standards for High Reliability (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data  Case: SO-8 Applications  Case Material: Molded Plastic, "Green" Molding Compound.  Backlighting UL Flammability Classification Rating 94V-0  Power Management Functions  Moisture Sensitivity: Level 1 per J-STD-020  DC-DC Converters  Terminal Connections Indicator: See diagram  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3  Weight: 0.074 grams (approximate) D S D SO-8 S D G S D G D S Top View Equivalent circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMG4466SSSL-13 SO-8 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 = Manufacturer’s Marking G4466SS = Product Type Marking Code YYWW = Date Code Marking G4466SS G4466SS YY or YY = Year (ex: 13 = 2013) YY WW YY WW WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 1 4 1 4 Chengdu A/T Site Shanghai A/T Site DMG4466SSSL 1 of 6 September 2013 Document number: DS32244 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4466SSSL Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 5) SStetaatdey TTAA == ++2855°°CC ID 160 A Pulsed Drain Current (Note 5) IDM 60 A Avalanche Current (Notes 6) IAR 16 A Repetitive Avalanche Energy (Notes 6) L = 0.1mH EAR 12.8 mJ Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 1.42 W Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5) RθJA 88.4 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.0 1.45 2.4 V VDS = VGS, ID = 250μA — 15 23 VGS = 10V, ID = 10A Static Drain-Source On-Resistance RDS (ON) 25 33 mΩ VGS = 4.5V, ID = 7.5A Forward Transfer Admittance |Yfs| — 2.5 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.69 1 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 478.9 — pF Output Capacitance Coss — 96.7 — pF Vf =D S1 .=0 M15HVz, VGS = 0V, Reverse Transfer Capacitance Crss — 61.4 — pF Gate Resistance Rg 0.4 1.1 1.6 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 5.0 8 nC Total Gate Charge (VGS = 10V) Qg — 10.5 17 Gate-Source Charge Qgs — 1.8 — nC VDS = 15V, VGS = 10V, ID = 10A Gate-Drain Charge Qgd — 1.6 — nC Turn-On Delay Time tD(on) — 2.9 — ns Turn-On Rise Time tr — 7.9 — ns VGS = 10V, VDS = 15V, Turn-Off Delay Time tD(off) — 14.6 — ns RG = 3Ω, RL = 1.5Ω Turn-Off Fall Time tf — 3.1 — ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. I and E rating are based on low frequency and duty cycles to keep T = 25°C AR AR J 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMG4466SSSL 2 of 6 September 2013 Document number: DS32244 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4466SSSL 30 20 VGS = 10V 25 VDS = 5V A) VGS = 4.5V A) 15 NT ( 20 VGS = 4.0V NT ( E E R R R R CU 15 VGS = 3.5V CU 10 AIN AIN VGS = 150°C DR 10 DR VGS = 125°C I, D I, D 5 VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V VGS = -55°C 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.5 1 1.5 2 2.5 3 3.5 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristic Fig. 2 Typical Transfer Characteristic ) 0.05 ) 0.04 E ( E ( VGS = 10V C C N N A 0.04 A ST ST 0.03 SI SI TA = 150°C E E N-R 0.03 VGS = 3.5V N-R TA = 125°C O O RCE VGS = 4.5V RCE 0.02 TA = 85°C OU 0.02 OU TA = 25°C S S RAIN- VGS = 10V RAIN- 0.01 TA = -55°C D 0.01 D , ON) , N) DS( S(O R 0 RD 0 0 5 10 15 20 25 30 0 5 10 15 20 25 30 I , DRAIN-SOURCE CURRENT (A) I , DRAIN CURRENT (A) D D Fig. 3 Typical On-Resistance Fig. 4 Typical On-Resistance vs. Drain Current and Gate Voltage vs. Drain Current and Temperature 1.7 0.06 ) E ( D) 1.5 VGIS == 54A.5V NC 0.05 E D A RCE MALIZ 1.3 VGS = 10V ESIST 0.04 UR I = 10A R OO D N- , DRAIN-SONSTANCE (N 01..91 SOURCE O 00..0023 VGIDS == 54A.5V SSI N- RDN-RE DRAI VIGDS = = 1 100AV O 0.7 , N 0.01 O S D R 0.5 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature DMG4466SSSL 3 of 6 September 2013 Document number: DS32244 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4466SSSL 2.0 20 V) 18 E ( 1.8 G 16 A VOLT 1.6 NT (A) 14 OLD 1.4 ID = 1mA RRE 12 TA = 25°C H U S C 10 THRE 1.2 ID = 250µA RCE 8 E OU AT 1.0 S 6 , GH) I, S 4 S(T 0.8 G 2 V 0.6 0 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 T , AMBIENT TEMPERATURE (°C) V , SOURCE-DRAIN VOLTAGE (V) A SD Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current 1,000 10,000 f = 1MHz Ciss A) F) NT (n1,000 TA = 150°C E (p RE NC UR TA = 125°C A C CIT 100 Coss GE 100 A A P K A Crss A C E C, , LS 10 TA = 85°C S D I TA = 25°C 10 1 0 5 10 15 20 25 30 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) V , DRAIN-SOURCE VOLTAGE (V) DS DS Fig. 9 Typical Total Capacitance Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 10 V) E ( 8 G A T L VO 6 VDS = 15V E ID = 10A C R U O S 4 E- T A G , GS 2 V 0 0 2 4 6 8 10 12 Q , TOTAL GATE CHARGE (nC) g Fig. 11 Gate-Charge Characteristics DMG4466SSSL 4 of 6 September 2013 Document number: DS32244 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

DMG4466SSSL 1 CE D = 0.7 N D = 0.5 A T S D = 0.3 SI E R 0.1 AL D = 0.1 M ER D = 0.05 D = 0.9 H NT T D = 0.02 RRJAJ(tA) == 9r(0t)° C* /RWJA E NSI 0.01 D = 0.01 P(pk) A t1 R T D = 0.005 t2 r(t), DTJu t-y T CAy =c leP, *D R = JtA1(/tt2) D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s) 1 Fig. 12 Transient Thermal Response Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SO-8 Dim Min Max A - 1.75 4 5 A1 0.10 0.20 E1 E 0.2 Gauge Plane A2 1.30 1.50 A1 Seating Plane A3 0.15 0.25 L b 0.3 0.5 Detail ‘A’ D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 h 7°~9° 45° e 1.27 Typ h - 0.35 Detail ‘A’ A2 A A3 L 0.62 0.82  0 8 e b All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X Dimensions Value (in mm) X 0.60 Y 1.55 C1 C1 5.4 C2 1.27 C2 Y DMG4466SSSL 5 of 6 September 2013 Document number: DS32244 Rev. 3 - 2 www.diodes.com © Diodes Incorporated

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