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DHG10I600PA产品简介:
ICGOO电子元器件商城为您提供DHG10I600PA由IXYS设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供DHG10I600PA价格参考¥询价-¥询价以及IXYSDHG10I600PA封装/规格参数等产品信息。 你可以下载DHG10I600PA参考资料、Datasheet数据手册功能说明书, 资料中有DHG10I600PA详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | DIODE FAST REC 600V 10A TO220AC二极管 - 通用,功率,开关 10 Amps 600V |
产品分类 | 单二极管/整流器分离式半导体 |
品牌 | IXYS |
产品手册 | |
产品图片 | |
rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
产品系列 | 二极管与整流器,二极管 - 通用,功率,开关,IXYS DHG10I600PA- |
数据手册 | |
产品型号 | DHG10I600PA |
不同If时的电压-正向(Vf) | 2.35V @ 10A |
不同 Vr、F时的电容 | - |
不同 Vr时的电流-反向漏电流 | 15µA @ 600V |
二极管类型 | 标准 |
产品 | Switching Diodes |
产品种类 | 二极管 - 通用,功率,开关 |
供应商器件封装 | TO-220AC |
包装 | 管件 |
单位重量 | 2.300 g |
反向恢复时间(trr) | 35ns |
商标 | IXYS |
商标名 | SONIC-FRD |
安装类型 | 通孔 |
安装风格 | Through Hole |
封装 | Tube |
封装/外壳 | TO-220-2 |
封装/箱体 | TO-220AC-2 |
峰值反向电压 | 600 V |
工作温度-结 | -55°C ~ 150°C |
工作温度范围 | - 55 C to + 150 C |
工厂包装数量 | 50 |
恢复时间 | 35 ns |
最大功率耗散 | 70 W |
最大反向漏泄电流 | 1.5 mA |
最大工作温度 | + 150 C |
最大浪涌电流 | 100 A |
最小工作温度 | - 55 C |
标准包装 | 50 |
正向电压下降 | 2.2 V |
正向连续电流 | 10 A |
热阻 | 1.8°C/W Jc |
电压-DC反向(Vr)(最大值) | 600V |
电流-平均整流(Io) | 10A |
系列 | DHG10I600PA |
速度 | 快速恢复 =< 500 ns,> 200mA(Io) |
配置 | Single |
DHG10I600PA preliminary = Sonic Fast Recovery Diode V 600V RRM = I 10A FAV = t 35ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DHG10I600PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 ● Planar passivated chips ● Antiparallel diode for high frequency ● Industry standard outline ● Very low leakage current switching devices ● RoHS compliant ● Very short recovery time ● Antisaturation diode ● Epoxy meets UL 94V-0 ● Improved thermal behaviour ● Snubber diode ● Very low Irm-values ● Free wheeling diode ● Very soft recovery behaviour ● Rectifiers in switch mode power ● Avalanche voltage rated for reliable supplies (SMPS) operation ● Uninterruptible power supplies (UPS) ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved
DHG10I600PA preliminary Fast Diode Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 600 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 600 V RRM VJ I reverse current, drain current V = 6 0 0 V T = 25°C 30 µA R R VJ V = 6 0 0 V T = 1 2 5 °C 1.2 mA R VJ V forward voltage drop I = 1 0 A T = 25°C 2.23 V F F VJ I = 2 0 A 3.13 V F I = 1 0 A T = 1 2 5 °C 2.18 V F VJ I = 2 0 A 3.29 V F I average forward current T = 9 5 °C T = 1 5 0 °C 10 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 5 0 °C 1.04 V F0 VJ for power loss calculation only r slope resistance 104 mΩ F R thermal resistance junction to case 1.8 K/W thJC R thermal resistance case to heatsink 0.50 K/W thCH P total power dissipation T = 25°C 70 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine; V = 0 V T = 45°C 80 A FSM R VJ C junction capacitance V = 4 0 0 V f = 1 MHz T = 25°C 6 pF J R VJ I max. reverse recovery current T = 25°C 4 A RM VJ I = 10A; V = 400V T = °C tbd A F R VJ t reverse recovery time -di /dt = 200A/µs T = 25°C 35 ns rr F VJ T = °C tbd ns VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved
DHG10I600PA preliminary Package TO-220 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 35 A RMS T virtual junction temperature -55 150 °C VJ T operation temperature -55 125 °C op T storage temperature -55 150 °C stg Weight 2 g M mounting torque 0.4 0.6 Nm D F mounting force with clip 20 60 N C Product Marking Part description D = Diode H = Sonic Fast Recovery Diode G = extreme fast 10 = Current Rating [A] I = Single Diode 600 = Reverse Voltage [V] Part Number XXXXXX PA = TO-220AC (2) Logo Zyyww Assembly Line Lot # abcdef Date Code Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DHG10I600PA DHG10I600PA Tube 50 503581 Similar Part Package Voltage class DHG10I600PM TO-220ACFP (2) 600 Equivalent Circuits for Simulation * on die level T V J =150°C I V R Fast 0 0 Diode V threshold voltage 1.04 V 0 max R slope resistance * 101 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved
DHG10I600PA preliminary Outlines TO-220 A Dim. Millimeter Inches = supplier option Min. Max. Min. Max. A1 E Q A 4.32 4.82 0.170 0.190 A1 1.14 1.39 0.045 0.055 1 A2 2.29 2.79 0.090 0.110 ØP H 4 b 0.64 1.01 0.025 0.040 D b2 1.15 1.65 0.045 0.065 C 0.35 0.56 0.014 0.022 1 3 D 14.73 16.00 0.580 0.630 1 E 9.91 10.66 0.390 0.420 2x b2 L e 5.08 BSC 0.200 BSC L H1 5.85 6.85 0.230 0.270 L 12.70 13.97 0.500 0.550 L1 2.79 5.84 0.110 0.230 2x b C ØP 3.54 4.08 0.139 0.161 e A2 Q 2.54 3.18 0.100 0.125 3 1 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20131126a ©2013 IXYS all rights reserved
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