DG636 www.vishay.com Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, • Ultra low charge injection designed to operate from a +2.7 V to +12 V single supply or (± 0.5 pC, typ. over the full analog signal range) from ± 2.7 V to ± 5 V, dual supplies. The DG636 is fully • Leakage current < 0.5 nA max. at 85 °C specified at +3 V, +5 V and ± 5 V. All control logic inputs (for DG636EQ-T1-E3) have guaranteed 2 V logic high limits when operating from • Low switch capacitance (C , 2 pF typ.) +5 V or ± 5 V supplies and 1.4 V when operating from a 3 V soff supply. • Low RDS(on) - 115 Ω max. The DG636 switches conduct equally well in both directions • Fully specified with single supply operation at 3 V, 5 V and and offer rail to rail analog signal handling. < 1 pC dual supplies at ± 5 V low charge injection, coupled with very low switch • Low voltage, 2.5 V CMOS/TTL compatible capacitance and leakage current makes this product ideal • 600 MHz, - 3 dB bandwidth for use in precision instrumentation applications. Operating • Excellent isolation and crosstalk performance temperature range is specified from -40 °C to +125 °C. The (typ. > -60 dB at 10 MHz) DG636 is available in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm miniQFN package. • Fully specified from -40 °C to +85 °C and -40 °C to +125 °C • 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High-end data acquisition • Medical instruments • Precision instruments • High speed communications applications • Automated test equipment • Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636 mQFN-16 DG636 TSSOP14 A0 NC NC A1 16 15 14 13 A0 1 14 A1 ENABLE 1 Logic 12 GND ENABLE 2 Logic 13 GND V- 2 11 V+ V- 3 12 V+ S1A 3 10 S2A S1A 4 11 S2A Rxx S1B 4 9 S2B S1B 5 10 S2B Pin 1 5 6 77 88 D1 6 9 D2 D(meivniicQeF MNa1r6k)ing: Rxx for DG636 D1 NC NC D2 NC 7 8 NC Top View xx = Date/Lot Traceability Code Top View ENABLE = Hi, all switches are controlled by addr pins. ENABLE = Lo, all switches are off. S14-2295-Rev. E, 08-Dec-14 1 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix TRUTH TABLE ENABLE SELECTED INPUT ON SWITCHES INPUT A1 A0 DG636 L X X All Switches Open H L L D1 to S1A, D2 to S2A H L H D1 to S1B, D2 to S2A H H L D1 to S1A, D2 to S2B H H H D1 to S1B, D2 to S2B ORDERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER 14 pin TSSOP DG636EQ-T1-E3 -40 °C to +125 °C a 16 pin miniQFN DG636EN-T1-E4 Note a. -40 °C to +85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A PARAMETER LIMIT UNIT V+ to V- 14 GND to V- 7 V (V-) -0.3 to (V+) +0.3 Digital Inputs a, V , V S D or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature -65 to +150 °C 14 pin TSSOP c 450 Power Dissipation (Package) b mW 16 pin miniQFN d, e 525 14 pin TSSOP 178 Thermal Resistance (Package) b °C/W 16 pin miniQFN 152 Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 6.6 mW/°C above 70 °C. e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. S14-2295-Rev. E, 08-Dec-14 2 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT V+ = 5 V, V- = -5 V MIN. d MAX. d MIN. d MAX. d V = 2 V, 0.8 V a IN A0, A1 AND ENABLE Analog Switch Analog Signal Range e V Full - -5 5 -5 5 V ANALOG Room 70 - 115 - 115 On-Resistance R I = 1 mA, V = -3 V, 0 V, +3 V DS(on) S D Full - - 160 - 140 Room 1 - 5 - 5 On-Resistance Match ΔR I = 1 mA, V = ± 3 V Ω ON S D Full - - 6.5 - 6.5 Room 10 - 20 - 20 On-Resistance Flatness R I = 1 mA, V = -3 V, 0 V, +3 V FLATNESS S D Full - - 33 - 22 Analog Signal Range e V Full - -5 5 -5 5 V ANALOG Room 70 - 115 - 115 On-Resistance R I = 1 mA, V = -3 V, 0 V, +3 V DS(on) S D Full - - 160 - 140 Room 1 - 5 - 5 On-Resistance Match ΔR I = 1 mA, V = ± 3 V Ω ON S D Full - - 6.5 - 6.5 Room 10 - 20 - 20 On-Resistance Flatness R I = 1 mA, V = -3 V, 0 V, +3 V FLATNESS S D Full - - 33 - 22 Room ± 0.01 -0.1 0.1 -0.1 0.1 SL(foewari tk1ca4hg peOi nfCf Tu SrrSenOtP ) IS(off) VDV =+ ±= 45..55 VV,, VVS- == -+−5 . 54 .V5 V RFouolml ± 0-.01 --01.81 01.81 --00..51 00..51 I D(off) Full - -18 18 -0.5 0.5 Channel On Room ± 0.01 -0.1 0.1 -0.1 0.1 Leakage Current I V+ = 5.5 V, V- = -5.5 V, (for 14 pin TSSOP) D(on) VS = VD = ± 4.5 V Full - -18 18 -0.5 0.5 nA Room ± 0.01 -1 1 -1 1 SL(foewari tk1ca6hg peOi nfCf mu rirneinQtF N) IS(off) VDV =+ ±= 45..55 VV,, VVS- == -+−5 . 54 .V5 V RFouolml ± 0-.01 --118 118 --21 21 I D(off) Full - -18 18 -2 2 Channel On Room ± 0.01 -1 1 -1 1 Leakage Current I V+ = 5.5 V, V- = -5.5 V, (for 16 pin miniQFN) D(on) VS = VD = ± 4.5 V Full - -18 18 -2 2 Digital Control V Input Current, V Low I IN A0, A1 and ENABLE Full 0.005 -0.1 0.1 -0.1 0.1 IN IL Under test = 0.8 V μA V Input Current, V High I IN A0, A1 and ENABLE Full 0.005 -0.1 0.1 -0.1 0.1 IN IH Under test = 2 V Input Capacitance e C f = 1 MHz Room 3.4 - - - - pF IN S14-2295-Rev. E, 08-Dec-14 3 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT V+ = 5 V, V- = -5 V MIN. d MAX. d MIN. d MAX. d V = 2 V, 0.8 V a IN A0, A1 AND ENABLE Dynamic Characteristics V = 3 V, V = 0 V, Room 20 - 70 - 70 Transition Time ttrans S(CRLOL S=E )300 Ω, CSL( O=P 3EN5) pF Full - - 105 - 80 Room 16 - 60 - 60 Turn-On Time t ON R = 300 Ω, C = 35 pF Full - - 90 - 65 L L ns VS = ± 3 V Room 15 - 52 - 52 Turn-Off Time t OFF Full - - 76 - 56 Break-Before-Make V = 3 V Room 15 - - - - Time Delay tD RL = 300 SΩ, CL = 35 pF Full - 5 - 5 - Charge Injection e Q V = 0 V, R = 0 Ω, C = 1 nF Room 0.1 - - - - pC g g L Off Isolation e OIRR R = 50 Ω, C = 5 pF, f = 10 MHz Room -58 - - - - dB L L Bandwidth e BW R = 50 Ω Room 610 - - - - MHz L Channel-to-Channel X R = 50 Ω, C = 5 pF, f = 10 MHz Room -88 - - - - dB Crosstalk e TALK L L Source Off Capacitance e C Room 2.1 - - - - S(off) Drain Off Capacitance e C f = 1 MHz Room 4.2 - - - - pF D(off) Channel On Capacitance e C Room 11.3 - - - - D(on) Signal = 1 V , 20 Hz to 20 kHz, Total Harmonic Distortion e THD RRM =S 600 Ω Room 0.01 - - - - % L Power Supplies Room 0.001 - 0.5 - 0.5 Power Supply Current I+ Full - - 1 - 1 Room -0.001 -0.5 - -0.5 - Negative Supply Current I- V = 0 V, or V+ μA IN Full - -1 - -1 - Room -0.001 -0.5 - -0.5 - Ground Current I GND Full - -1 - -1 - S14-2295-Rev. E, 08-Dec-14 4 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP.b TYP. c UNIT V+ = 5 V, V- = 0 V MIN. d MAX. d MIN. d MAX. d V = 2 V, 0.8 V a IN A0, A1 AND ENABLE Analog Switch Analog Signal Range e V Full - - 5 - 5 V ANALOG Room 120 - 170 - 170 On-Resistance R I = 1 mA, V = +3.5 V DS(on) S D Full - - 250 - 200 Ω Room 3 - 5 - 5 On-Resistance Match ΔR I = 1 mA, V = +3.5 V ON S D Full - - 12 - 10 Room ± 0.01 -0.1 0.1 -0.1 0.1 SLewaitkcahg eO fCf u rrent IS(off) V+ = 5.5 V, V- = 0 V Full - -18 18 -0.5 0.5 (for 14 pin TSSOP) VD = 1 V/4.5 V, VS = 4.5 V/1 V Room ± 0.01 -0.1 0.1 -0.1 0.1 I D(off) Full - -18 18 -0.5 0.5 Channel On Room ± 0.01 -0.1 0.1 -0.1 0.1 Leakage Current I V+ = 5.5 V, V- = 0 V (for 14 pin TSSOP) D(on) VS = VD = 1 V/4.5 V Full - -18 18 -0.5 0.5 nA Room ± 0.01 -1 1 -1 1 SLewaitkcahg eO fCf u rrent IS(off) V+ = 5.5 V, V- = 0 V Full - -18 18 -2 2 (for 16 pin miniQFN) VD = 1 V/4.5 V, VS = 4.5 V/1 V Room ± 0.01 -1 1 -1 1 I D(off) Full - -18 18 -2 2 Channel On Room ± 0.01 -1 1 -1 1 Leakage Current I V+ = 5.5 V, V- = 0 V, (for 16 pin miniQFN) D(on) VS = VD = 1 V/4.5 V Full - -18 18 -2 2 Digital Control V Input Current, V Low I IN A0, A1 and ENABLE Full 0.005 -0.1 0.1 -0.1 0.1 IN L Under test = 0.8 V μA V Input Current, V High I IN A0, A1 and ENABLE Full 0.005 -0.1 0.1 -0.1 0.1 IN H Under test = 2 V Input Capacitance C f = 1 MHz Room 4.3 - - - - pF IN Dynamic Characteristics Room 36 - 75 - 75 Transition Time t TRANS Full - - 120 - 95 V = 3 V, V = 0 V, Room 30 - 70 - 70 Enable Turn-On Time tON(EN) S(CRLOL S=E )300 Ω, CSL( O=P 3EN5) pF Full - - 102 - 80 ns Room 17 - 47 - 47 Enable Turn-Off Time t OFF(EN) Full - - 88 - 63 Room 23 - - - - Break-Before-Make-Time t BMM Full - 5 - 5 - Charge Injection Q C = 1 nF, R = 0 Ω, V = 0 V Full 0.1 - - - - pC L GEN GEN Off-Isolation e OIRR Room -58 - - - - f = 10 MHz, R = 50 Ω, C = 5 pF dB Crosstalk e X L L Room -81 - - - - TALK Bandwidth e BW R = 50 Ω Room 520 - - - - MHz L Signal = 1 V , 20 Hz to 20 kHz, Total Harmonic Distortion THD RRM =S 600 Ω Room 0.009 - - - - % L Source Off Capacitance e C 2.5 - - - - S(off) Drain Off Capacitance e C f = 1 MHz Room 6.4 - - - - pF D(off) Channel On Capacitance e C 11.3 - - - - D(on) S14-2295-Rev. E, 08-Dec-14 5 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP.b TYP. c UNIT V+ = 5 V, V- = 0 V MIN. d MAX. d MIN. d MAX. d V = 2 V, 0.8 V a IN A0, A1 AND ENABLE Power Supplies Room 0.001 - 0.5 - 0.5 Power Supply Current I+ Full - - 1 - 1 Room -0.001 -0.5 - -0.5 - Negative Supply Current I- V = 0 V, or V+ μA IN Full - -1 - -1 - Room -0.001 -0.5 - -0.5 - Ground Current I GND Full - -1 - -1 - SPECIFICATIONS FOR SINGLE SUPPLY TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT V+ = 3 V, V- = 0 V MIN. d MAX. d MIN. d MAX. d V = 1.4 V, 0.6 V a IN A0, A1 AND ENABLE Analog Switch Analog Signal Range e V Full - - 3 - 3 V ANALOG Room 200 - 245 - 245 On-Resistance R I = 1 mA, V = +1.5 V DS(on) S D Full - - 325 - 290 Ω Room 5 - 6 - 11 On-Resistance Match ΔR I = 1 mA, V = +1.5 V ON S D Full - - 13 - 6 Room ± 0.01 -0.1 0.1 -0.1 0.1 I SCwurirtcehnt O ff Leakage S(off) V+ = 3 V, V- = 0 V Full - -18 18 -0.5 0.5 (for 14 pin TSSOP) VD = 1 V/3 V, VS = 3 V/1 V Room ± 0.01 -0.1 0.1 -0.1 0.1 I D(off) Full - -18 18 -0.5 0.5 Channel On Leakage Room ± 0.01 -0.1 0.1 -0.1 0.1 Current I V+ = 3 V, V- = 0 V (for 14 pin TSSOP) D(on) VS = VD = 1 V/3 V Full - -18 18 -0.5 0.5 nA Room ± 0.01 -1 1 -1 1 SLewaitkcahg eO fCf u rrent IS(off) V+ = 3.3 V, V- = 0 V Full - -18 18 -2 2 (for 16 pin miniQFN) VD = 1 V/3 V, VS = 3 V/1 V Room ± 0.01 -1 1 -1 1 I D(off) Full - -18 18 -2 2 Channel On Room ± 0.01 -1 1 -1 1 Leakage Current I V+ = 3.3 V, V- = 0 V, (for 16 pin miniQFN) D(on) VS = VD = 1 V/3 V Full - -18 18 -2 2 Digital Control V Input Current, V Low I IN A0, A1 and ENABLE Full 0.005 -1 1 -1 1 IN L Under test = 0.6 V μA V Input Current, V High I IN A0, A1 and ENABLE Full 0.005 -1 1 -1 1 IN H Under test = 1.4 V Input Capacitance C f = 1 MHz Room 4.3 - - - - pF IN S14-2295-Rev. E, 08-Dec-14 6 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY TEST CONDITIONS -40 °C to +125 °C -40 °C to +85 °C UNLESS OTHERWISE PARAMETER SYMBOL SPECIFIED TEMP. b TYP. c UNIT V+ = 3 V, V- = 0 V MIN. d MAX. d MIN. d MAX. d V = 1.4 V, 0.6 V a IN A0, A1 AND ENABLE Dynamic Characteristics Room 95 - 130 - 130 Transition Time t TRANS Full - - 190 - 160 V = 3 V, V = 0 V, Room 77 - 108 - 108 Enable Turn-On Time tON(EN) S(CRLOL S=E )300 Ω, CSL( O=P 3EN5) pF Full - - 161 - 131 ns Room 35 - 76 - 76 Enable Turn-Off Time t OFF(EN) Full - - 112 - 88 Room 45 - - - - Break-Before-Make-Time t BMM Full - 5 - 5 - Charge Injection Q C = 1 nF, R = 0 Ω, V = 0 V Full 0.24 - - - - pC L GEN GEN Off-Isolation e OIRR Room -57 - - - - f = 10 MHz, R = 50 Ω, C = 5 pF dB Crosstalk e X L L Room -93 - - - - TALK Bandwidth e BW R = 50 Ω Room 442 - - - - MHz L Total Harmonic Signal = 1 V , 20 Hz to 20 kHz, Distortion THD RRM =S 600 Ω Room 0.09 - - - - % L Source Off Capacitance e C Room 2.5 - - - - S(off) Drain Off Capacitance e C f = 1 MHz Room 6.4 - - - - pF D(off) Channel On Capacitance e C Room 11.7 - - - - D(on) Power Supplies Room 0.001 - 0.5 - 0.5 Power Supply Current I+ Full - - 1 - 1 Room -0.001 -0.5 -0.5 Negative Supply Current I- VIN = 0 V, or V+ μA Full - -1 - -1 - Room -0.001 -0.5 - -0.5 - Ground Current IGND Full - -1 - -1 - Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-2295-Rev. E, 08-Dec-14 7 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 350 160 300 VCC = 2.7 V TIS == 215 m °CA 140 VV+- == -+ 2 .27. 7V V ) 250 VCC = 3.0 V ) 120 V+ = + 5.0 V VV+- == -+ 6 .62. 2V V Resistance ( 200 VCC = 5.0 V Resistance ( 10800 V- = - 5.0 V n- 150 n- - ON VCC = 13.2 V - ON 60 RO 100 RO 40 50 20 T = 25 °C IS = 1 mA 0 0 0 2 4 6 8 10 12 14 - 8 - 6 - 4 - 2 0 2 4 6 8 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. V (Single Supply Voltage) On-Resistance vs. V (Dual Supply Voltage) D D 500 400 V+ = 3.0 V, V- = 0 V V+ = 5.0 V, V- = 0 V 450 IS = 1 mA + 25 °C 350 IS = 1 mA 400 + 125 °C - 40 °C 300 ) 350 ) e ( + 85 °C e ( nc 300 nc 250 + 125 °C a a st st + 85 °C Resi 250 Resi 200 + 25 °C n- n- - 40 °C O 200 O - N - N 150 O 150 O R R 100 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 250 10 mA V+ = 5.0 V, V- = - 5.0 V 225 IS = 1 mA 1 mA V+ = + 5.0 V V- = - 5.0 V 200 100 µA stance () 115705 + 125 °C+ 85 °C ent (A) 110 µµAA I+ On-Resi 110205 + 25 °C - 40 °C ply Curr100 nA I- IGND R - ON 75 Sup 1 nA 50 100 pA 25 10 pA 0 1 pA - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 10 100 1K 10K 100K 1M 10M VD - Analog Voltage (V) Input Switching Frequency (Hz) On-Resistance vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency S14-2295-Rev. E, 08-Dec-14 8 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 000 10 000 V+ = + 5.0 V V+ = 13.2 V V- = - 5.0 V V- = 0 V 10 000 ID(off) 1000 Current (pA) 1000 ID(off) Current (pA) 100 IS(off) Leakage 100 ID(on) IS(off) Leakage 10 ID(on) 10 1 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Temperature (°C) Leakage Current vs. Temperature Leakage Current vs. Temperature 10 1.2 0 LOSS 1.0 V+ = + 3.0 V - 10 0.8 V- = 0 V O, X (dB)IRRTALK ---- 54320000 VR+L == 5±0 5 .0 V OIRR arge Injection (pC) - 0000.0...2246 VV-+ == -+ 5 5.0.0 V V VV+- == 0+ V 13.2 V L, OSS -- 7600 XTALK Q - Ch -- 00..64 VV+- == 0+ V 12 V - 80 - 0.8 V+ = + 5.0 V V- = 0 V - 90 - 1 - 100 - 1.2 100K 1M 10M 100M 1G - 6- 5- 4- 3- 2- 1 0 1 2 3 4 5 6 7 8 9101112131415 Frequency (Hz) VS - Analog Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Charge Injection vs. Analog Voltage 100 3.0 RL = 600  10 VSignal = 1 VRMS 2.5 V) d ( ol 2.0 h 1 s %) V+ = 3.0 V hre D ( V+ = 5.0 V g T 1.5 H V± = ± 5.0 V n T 0.1 chi wit S 1.0 - T V 0.01 0.5 0.001 0.0 10 100 1000 10 000 100 000 0 2 4 6 8 10 12 14 Frequency (Hz) V+ - Supply Voltage (V) Total Harmonic Distortion vs. Frequency Switching Threshold vs. Supply Voltage S14-2295-Rev. E, 08-Dec-14 9 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ tr < 5 ns VCC tf < 5 ns V+ A0 S1A or S2A VS1A or VS2A VA0,A1 0 V 50 % A1 S2A or S2B VS2A or VS2B 50 Ω VS1A or VS2A V+ ENABLE D1 or D2 VO VO 50 % GND V- 300 Ω 35 pF 90 % V- tTRANS tTRANS Fig. 1 - Transition Time V+ tr < 5 ns VCC tf < 5 ns V+ A0 S1A or S2A V+ VENABLE 0 V 50 % A1 S1B or S2B VS1A or VS2A 90 % 90 % ENABLE D1 or D2 VO VO 50 % 50 Ω GND V- 300 Ω 35 pF 0 V V- tON tOFF S1A or S2A ON Fig. 2 - Enable Switching Time V+ tr < 5 ns VCC tf < 5 ns V+ A0 SxA - SxB V+ VA0,A1 0 V 50 % A1 50 Ω VSxA or VSxB 80 % V+ ENABLE D1 or D2 VO VO GND V- 300 Ω 35 pF 0 V V- tD Fig. 3 - Break-Before-Make S14-2295-Rev. E, 08-Dec-14 10 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG636 www.vishay.com Vishay Siliconix TEST CIRCUITS V+ tr < 5 ns tf < 5 ns V+ A0 VCC Channel Select A1 VENABLE 0 V OFF ON OFF Rg SxA or SxB Vg ENABLE D1 or D2 VO VO ΔVO GND V- 1C nLF Charge Injection = ΔVO X C L V- Fig. 4 - Charge Injection V+ V+ Network Analyzer Network Analyzer V+ VIN V+ VIN A0 S1A or S2A A0 SxA or SxB A1 Vg Rg = 50 Ω A1 Vg Rg = 50 Ω V+ ENABLE D1 or D2 VOUT ENABLE D1 or D2 VOUT GND V- 50 Ω GND V- 50 Ω V- V- Insertion Loss = 20 log VOUT Off Isolation = 20 log VOUT VIN VIN Fig. 5 - Insertion Loss Fig. 7 - Off-Isolation V+ Network Analyzer V+ V+ VIN A0 S1A or S2A V+ A1 Vg Rg = 50 Channel A0 S1A or S2A Select | A1 to D1 or D2 VOUT S2A o|r S2B ImApneadlyaznecre 50 Ω V+ ENABLE S1B or S2B GND V- 50 Ω V+ ENABLE D1 or D2 GND V- V- V- Cross Talk = 20 log VOUT VIN Fig. 6 - Crosstalk Fig. 8 - Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69901. S14-2295-Rev. E, 08-Dec-14 11 Document Number: 69901 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix Thin miniQFN16 Case Outline A D B Terminal tip 1(46) x b 00..1005MM CCAB 12 11 10 9 9 10 11 12 13 8 8 13 C 14 7 7 14 E 10 15 6 6 15 0. 16 5 5 16 L1 1 2 3 4 4 3 2 1 Pin #1 identifier (5) 15 x L e 0.10C Top view Bottom view 0.10C C A 0.10C Seating plane A3 Side view MILLIMETERS (1) INCHES DIMENSIONS MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0 - 0.05 0 - 0.002 A3 0.15 ref. 0.006 ref. b 0.15 0.20 0.25 0.006 0.008 0.010 D 2.50 2.60 2.70 0.098 0.102 0.106 e 0.40 BSC 0.016 BSC E 1.70 1.80 1.90 0.067 0.071 0.075 L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 N (3) 16 16 Nd (3) 4 4 Ne (3) 4 4 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: T16-0226-Rev. B, 09-May-16 DWG: 6023 Revision: 09-May-16 1 Document Number: 64694 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix 14L TSSOP 3 D CL e Notes: 14 1. All dimensions are in millimeters (angles in degrees) 2. Dimensioning and tolerancing per ANSI Y14.5M-1982 3 Dimension ‘D’ does not include mold flash, protrusions or gate burrs 4 Dimension ‘E1’ does not include internal flash or protrusion 4 5 Dimension ‘b’ does not include dambar protrusion CL E1 E 6 Cross section B to B to be determined at 0.10 mm to 0.25 mm from the lead tip Pin 1 ID mark 1 2 3 Detail ‘A’ 2 A A B 6 Seating Plane B b 1 A R 0.25 5 b Gauge Plane R1 c1 c Seating Plane b1 θ1 L Detail ‘B to B’ Detail ‘A’ L1 SYMBOL MINIMUM NOMINAL MAXIMUM A - - 1.20 A1 0.05 - 0.15 A2 0.80 0.90 1.05 D 4.9 5.0 5.1 E1 4.3 4.4 4.5 E 6.2 6.4 6.6 L 0.45 0.60 0.75 R 0.09 - - R1 0.09 - - b 0.19 - 0.30 b1 0.19 0.22 0.25 c 0.09 - 0.20 c1 0.09 - 0.16 θ1 0° - 8° L1 1.0 ref. e 0.65 BSC ECN: T-07766-Rev. A, 14-Jan-08 DWG: 5962 Document Number: 69938 www.vishay.com Revision: 14-Jan-08 1

PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 1 0.225 (0.0089) 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 www.vishay.com Revision: 05-Mar-10 1

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