DG604 Vishay Siliconix 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer FEATURES DESCRIPTION (cid:129) Halogen-free according to IEC 61249-2-21 Definition The DG604 is an analog 4-channel CMOS, multiplexer, (cid:129) Ultra low charge injection designed to operate from a + 2.7 V to + 12 V single supply or (± 1 pC, typ. over the full analog signal range) from ± 2.7 V to ± 5 V, dual supplies. The DG604 is fully (cid:129) Leakage current < 0.5 nA max. at 85 °C specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have (for DG604EQ-T1-E3) guaranteed 2 V logic high limits when operating from+ 5 V or (cid:129) Low switch capacitance (C , 3 pF typ.) ± 5 V supplies and 1.4 V when operating from a 3 V supply. soff The DG604 switches conduct equally well in both directions (cid:129) Low RDS(on) - 115  max. and offer rail to rail analog signal handling. < 1 pC low charge (cid:129) Fully specified with single supply operation at 3 V, 5 V and dual supplies at ± 5 V injection, coupled with very low switch capacitance and leakage current makes this product ideal for use in precision (cid:129) Low voltage, 2.5 V CMOS/TTL compatible instrumentation applications. Operating temperature range is (cid:129) 400 MHz, - 3 dB bandwidth specified from - 40 °C to + 125 °C. The DG604 is available in (cid:129) Excellent isolation and crosstalk performance 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm (typ. > - 60 dB at 10 MHz) miniQFN package. (cid:129) Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C (cid:129) 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x2.6 mm) • Compliant to RoHS Directive 2002/95/EC APPLICATIONS (cid:129) High-end data acquisition (cid:129) Medical instruments (cid:129) Precision instruments (cid:129) High speed communications applications (cid:129) Automated test equipment (cid:129) Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG604 DG604 TSSOP14 mQFN-16 6 A0 NC NC A1 A0 1 14 A1 16 15 14 13 ENABLE 2 Logic 13 GND ENABLE 1 Logic 12 GND V- 3 12 V+ V- 2 11 V+ S1 4 11 S3 Txx S1 3 10 S3 S2 5 10 S4 S2 4 9 S4 D 6 9 NC Pin 1 Device Marking: Txx for DG604 5 6 7 8 NC 7 8 NC (miniQFN16) xx = Date/Lot Traceability Code D NC NC NC Top View Top View Document Number: 69934 www.vishay.com S11-1429-Rev. C, 18-Jul-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix TRUTH TABLE Enable Selected Input On Switches Input A1 A0 DG604 L X X All Switches Open H L L D to S1 H L H D to S2 H H L D to S3 H H H D to S4 ORDERING INFORMATION Temp. Range Package Part Number 14 pin TSSOP DG604EQ-T1-E3 - 40 °C to 125 °Ca 16 pin miniQFN DG604EN-T1-E4 Notes: a. - 40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Limit Unit V+ to V- 14 GND to V- 7 V Digital Inputsa, V , V (V-) - 0.3 to (V+) + 0.3 S D or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature - 65 to 150 °C 14 pin TSSOPc 450 Power Dissipation (Package)b mW 16 pin miniQFNd, e 525 14 pin TSSOP 178 Thermal Resistance (Package)b C/W 16 pin miniQFN 152 Notes: a.Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b.All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d.Derate 6.6 mW/°C above 70 °C. e.Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions - 40 °C to 125 °C - 40 °C to 85 °C Unless Otherwise Specified V+ = 5 V, V- = - 5 V Parameter Symbol V = 2 V, 0.8 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit IN A0, A1 and ENABLE Analog Switch Analog Signal Rangee VANALOG Full - 5 5 - 5 5 V Room 70 115 115 On-Resistance RDS(on) IS = 1 mA, VD = - 3 V, 0 V, + 3 V Full 160 140 Room 1 5 5 On-Resistance Match RON IS = 1 mA, VD = ± 3 V Full 6.5 6.5  Room 10 20 20 On-Resistance Flatness RFLATNESS IS = 1 mA, VD = - 3 V, 0 V, + 3 V Full 33 22 www.vishay.com Document Number: 69934 2 S11-1429-Rev. C, 18-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions - 40 °C to 125 °C - 40 °C to 85 °C Unless Otherwise Specified V+ = 5 V, V- = - 5 V Parameter Symbol V = 2 V, 0.8 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit IN A0, A1 and ENABLE Analog Switch Room ± 0.01 - 0.1 0.1 - 0.1 0.1 Switch Off IS(off) V+ = 5.5 V, V- = - 5.5 V Full - 18 18 - 0.5 0.5 Leakage Current (for 14 pin TSSOP) I VD = ± 4.5 V, VS = ± 4.5 V Room ± 0.01 - 0.1 0.1 - 0.1 0.1 D(off) Full - 18 18 - 0.5 0.5 Channel On V+ = 5.5 V, V- = - 5.5 V, Room ± 0.01 - 0.1 0.1 - 0.1 0.1 Leakage Current ID(on) V = V = ± 4.5 V Full - 18 18 - 0.5 0.5 (for 14 pin TSSOP) S D nA Room ± 0.01 - 1 1 - 1 1 Switch Off IS(off) V+ = 5.5 V, V- = - 5.5 V Full - 18 18 - 2 2 Leakage Current (for 16 pin miniQFN) I VD = ± 4.5 V, VS = ± 4.5 V Room ± 0.01 - 1 1 - 1 1 D(off) Full - 18 18 - 2 2 Channel On V+ = 5.5 V, V- = - 5.5 V, Room ± 0.01 - 1 1 - 1 1 Leakage Current ID(on) V = V = ± 4.5 V Full - 18 18 - 2 2 (for 16 pin miniQFN) S D Digital Control V Input Current, VIN Low IIL UINn dAe0,r AT1e asnt d= E 0N.A8B VLE Full 0.005 - 0.1 0.1 - 0.1 0.1 µA V Input Current, VIN High IIH IUN nAd0e, Ar 1T eansdt E=N 2A BVLE Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 3.4 pF Dynamic Characteristics Transition Time tTRANS VS(CRLOS =E )3 =0 03 V,, CVS (=O P3E5N p) F= 0 V, RFouolml 20 17005 7800 L L Room 16 60 60 Turn-On Time tON RL = 300 , CL = 35 pF Full 90 65 ns Turn-Off Time tOFF VS = ± 3 V RFouolml 15 5726 5526 Break-Before-Make t VS = 3 V Room 15 Time Delay D R = 300 , C = 35 pF Full 10 10 L L Charge Injectione Q Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.7 pC Off Isolatione OIRR RL = 50 , CL = 5 pF, f = 10 MHz Room - 72 dB Bandwidthe BW RL = 50  Room 400 MHz Channel-to-Channel Crosstalke XTALK RL = 50 , CL = 5 pF, f = 10 MHz Room - 81 dB Source Off Capacitancee CS(off) Room 2.7 Drain Off Capacitancee CD(off) f = 1 MHz Room 7.3 pF Channel On Capacitancee CD(on) Room 13.8 Total Harmonic Signal = 1 VRMS, 20 Hz to 20 kHz, THD Room 0.01 % Distortione R = 600  L Power Supplies Room 0.001 0.5 0.5 Power Supply Current I+ Full 1 1 Room - 0.001 - 0.5 - 0.5 Negative Supply Current I- VIN = 0 V, or V+ Full - 1 - 1 µA Room - 0.001 - 0.5 - 0.5 Ground Current IGND Full - 1 - 1 Document Number: 69934 www.vishay.com S11-1429-Rev. C, 18-Jul-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Test Conditions - 40 °C to 125 °C - 40 °C to 85 °C Unless Otherwise Specified V+ = 5 V, V- = 0 V Parameter Symbol V = 2 V, 0.8 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit IN A0, A1 and ENABLE Analog Switch Analog Signal Rangee VANALOG Full 5 5 V Room 120 170 170 On-Resistance RDS(on) IS = 1 mA, VD = + 3.5 V Full 250 200  Room 3 5 5 On-Resistance Match RON IS = 1 mA, VD = + 3.5 V Full 12 10 Room ± 0.01 - 0.1 0.1 - 0.1 0.1 I Switch Off Leakage Current S(off) V+ = 5.5 V, V- = 0 V Full - 18 18 - 0.5 0.5 (for 14 pin TSSOP) I VD = 1 V/4.5 V, VS = 4.5 V/1 V Room ± 0.01 - 0.1 0.1 - 0.1 0.1 D(off) Full - 18 18 - 0.5 0.5 Channel On Leakage Current V+ = 5.5 V, V- = 0 V Room ± 0.01 - 0.1 0.1 - 0.1 0.1 I (for 14 pin TSSOP) D(on) V = V = 1 V/4.5 V Full - 18 18 - 0.5 0.5 S D Room ± 0.01 - 1 1 - 1 1 nA Switch Off IS(off) V+ = 5.5 V, V- = - 5.5 V Full - 18 18 - 2 2 Leakage Current (for 16 pin miniQFN) I VD = 1 V/4.5 V, VS = 4.5 V/1 V Room ± 0.01 - 1 1 - 1 1 D(off) Full - 18 18 - 2 2 Channel On V+ = 5.5 V, V- = 0 V, Room ± 0.01 - 1 1 - 1 1 Leakage Current ID(on) V = V = 1 V/4.5 V Full - 18 18 - 2 2 (for 16 pin miniQFN) S D Digital Control V Input Current, VIN Low IL IN A0, A1 and ENABLE Full 0.005 - 0.1 0.1 - 0.1 0.1 Under Test = 0.8 V µA V Input Current, VIN High IH IN A0, A1 and ENABLE Full 0.005 - 0.1 0.1 - 0.1 0.1 Under Test = 2 V Input Capacitance CIN f = 1 MHz Room 4.3 pF Dynamic Characteristics Room 36 75 75 Transition Time tTRANS Full 120 95 Enable Turn-On Time tON(EN) VS(CRLOS =E )3 =0 03 V,, CVS (=O P3E5N p) F= 0 V, RFouolml 30 17002 7800 L L ns Room 17 47 47 Enable Turn-Off Time tOFF(EN) Full 88 63 Room 23 Break-Before-Make-Time tBMM Full 5 5 Charge Injection Q CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 0.15 pC Off-Isolatione OIRR Room - 58 Crosstalke XTALK f = 10 MHz, RL = 50 , CL = 5 pF Room - 81 dB Bandwidthe BW RL = 50  Room 330 MHz Signal = 1 V 20 Hz to 20 kHz, RMS, Total Harmonic Distortion THD Room 0.009 % R = 600  L Source Off Capacitancee CS(off) 3.1 Drain Off Capacitancee CD(off) f = 1 MHz Room 11.6 pF Channel On Capacitancee CD(on) 16.2 Power Supplies Room 0.001 0.5 0.5 Power Supply Current I+ Full 1 1 Room - 0.001 - 0.5 - 0.5 Negative Supply Current I- VIN = 0 V, or V+ Full - 1 - 1 µA Room - 0.001 - 0.5 - 0.5 Ground Current IGND Full - 1 - 1 www.vishay.com Document Number: 69934 4 S11-1429-Rev. C, 18-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY Test Conditions - 40 °C to + 125 °C - 40 °C to + 85 °C Unless Otherwise Specified V+ = 3 V, V- = 0 V Parameter Symbol V = 1.4 V, 0.6 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit IN A0, A1 and ENABLE Analog Switch Analog Signal Rangee VANALOG Full 3 3 V Room 200 245 245 On-Resistance RDS(ON) IS = 1 mA, VD = + 1.5 V Full 325 290  Room 5 6 11 On-Resistance Match RON IS = 1 mA, VD = + 1.5 V Full 13 6 Room ± 0.01 - 0.1 0.1 - 0.1 0.1 Switch Off IS(off) V+ = 3 V, V- = 0 V Full - 18 18 - 0.5 0.5 Leakage Current (for 14 pin TSSOP) I VD = 1 V/3 V, VS = 3 V/1 V Room ± 0.01 - 0.1 0.1 - 0.1 0.1 D(off) Full - 18 18 - 0.5 0.5 Channel On Leakage V+ = 3 V, V- = 0 V Room ± 0.01 - 0.1 0.1 - 0.1 0.1 I Current (for 14 pin TSSOP) D(on) V = V = 1 V/3 V Full - 18 18 - 0.5 0.5 S D Room ± 0.01 - 1 1 - 1 1 nA Switch Off IS(off) V+ = 3.3 V, V- = 0 V Full - 18 18 - 2 2 Leakage Current (for 16 pin miniQFN) I VD = 1 V/3 V, VS = 3 V/1 V Room ± 0.01 - 1 1 - 1 1 D(off) Full - 18 18 - 2 2 Channel On V+ = 3.3 V, V- = 0 V Room ± 0.01 - 1 1 - 1 1 Leakage Current ID(on) V = 1 V/3 V, V = 3 V/1 V Full - 18 18 - 2 2 (for 16 pin miniQFN) D S Digital Control V Input Current, VIN Low IL IN A0, A1 and ENABLE Full 0.005 - 1 1 - 1 1 Under Test = 0.6 V µA V Input Current, VIN High IH IN A0, A1 and ENABLE Full 0.005 - 1 1 - 1 1 Under Test = 1.4 V Input Capacitance CIN f = 1 MHz Room 4.3 pF Dynamic Characteristics Room 95 130 130 Transition Time tTRANS Full 190 160 Enable Turn-On Time tON(EN) VS(CRLOS =E )3 =0 03 V,, CVS (=O P3E5N p) F= 0 V, RFouolml 77 110681 110381 L L ns Room 35 76 76 Enable Turn-Off Time tOFF(EN) Full 112 88 Room 45 Break-Before-Make-Time tBMM Full 5 5 Charge Injection Q CL = 1 nF, RGEN = 0 , VGEN = 0 V Full 0.1 pC Off-Isolatione OIRR Room - 58 Crosstalke XTALK f = 10 MHz, RL = 50 , CL = 5 pF Room - 90 dB Bandwidthe BW RL = 50  Room 290 MHz Signal = 1 V 20 Hz to 20 kHz, RMS, Total Harmonic Distortion THD Room 0.09 % R = 600  L Source Off Capacitancee CS(off) 3.1 Drain Off Capacitancee CD(off) f = 1 MHz Room 11.7 pF Channel On Capacitancee CD(on) 16.5 Power Supplies Room 0.001 0.5 0.5 Power Supply Current I+ Full 1 1 Room - 0.001 - 0.5 - 0.5 Negative Supply Current I- VIN = 0 V, or V+ Full - 1 - 1 µA Room - 0.001 - 0.5 - 0.5 Ground Current IGND Full - 1 - 1 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69934 www.vishay.com S11-1429-Rev. C, 18-Jul-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 350 160 300 VCC = 2.7 V TIS == 215 m °CA 140 VV+- == -+ 2 .27. 7V V VCC = 3.0 V V+ = + 6.2 V ) 250 120 V+ = + 5.0 V V- = - 6.2 V e ( ) V- = - 5.0 V nc e (100 Resista 200 VCC = 5.0 V sistanc 80 n- 150 Re R - OON 100 VCC = 13.2 V R - On-ON 4600 50 20 T = 25 °C IS = 1 mA 0 0 0 2 4 6 8 10 12 14 - 8 - 6 - 4 - 2 0 2 4 6 8 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. VD (Single Supply Voltage) On-Resistance vs. VD (Dual Supply Voltage) 500 400 450 V+ = 3.0 V, V- = 0 V V+ = 5.0 V, V- = 0 V IS = 1 mA + 25 °C 350 IS = 1 mA 400 + 125 °C - 40 °C 300 ) 350 ) Resistance ( 235000 + 85 °C Resistance ( 220500 + 125 °C+ 85 °C+ 25 °C On- 200 On- - 40 °C R - ON 150 R - ON 150 100 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature 250 10 mA V+ = 5.0 V, V- = - 5.0 V 225 1 mA V+ = + 5.0 V IS = 1 mA V- = - 5.0 V 200 100 µA e () 175 A) 10 µA - On-ResistancN 111025050 + 125 °C+ 85 °C+ 25 °C - 40 °C Supply Current (10110 nµnAAA I+ I- IGND RO 75 50 100 pA 25 10 pA 0 1 pA - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 10 100 1K 10K 100K 1M 10M VD - Analog Voltage (V) Input Switching Frequency (Hz) On-Resistance vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency www.vishay.com Document Number: 69934 6 S11-1429-Rev. C, 18-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 000 10 000 V+ = + 5.0 V V+ = 13.2 V V- = - 5.0 V V- = 0 V 10 000 ID(off) 1000 A) A) Current (p1000 ID(off) Current (p 100 IS(off) Leakage 100 Leakage ID(on) ID(on) IS(off) 10 10 1 1 - 60 - 40 - 20 0 20 40 60 80 100 120 140 - 60 - 40 - 20 0 20 40 60 80 100 120 140 Temperature (°C) Temperature (°C) Leakage Current vs. Temperature Leakage Current vs. Temperature 10 0.8 0 LOSS 0.7 T = 25 °C 0.6 CL = 1 nF - 10 0.5 , O, X (dB)SSIRRTALK ----- 6543200000 VR+L == 5±0 5 .0 V OIRR XTALK Charge Injection (pC)-- 000000......0241321 VV+- == 0+ V 5.0 V VV+- == 0+ V 3.0 V LO - 70 Q - - 0.3 V+ = + 5.0 V - 0.4 V- = - 5.0 V - 80 - 0.5 - 0.6 - 90 - 0.7 - 100 - 0.8 100K 1M 10M 100M 1G - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 Frequency (Hz) VS - Analog Voltage (V) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Charge Injection vs. Analog Voltage 100 3.0 10 2.5 V) d ( ol 2.0 1 h HD (%) VV+- == 0+. 03 .V0 V VV+- == 0+. 05 .V0 V g Thres 1.5 T 0.1 hin c wit S 1.0 - T 0.01 V 0.5 V+ = + 5.0 V V- = - 5.0 V 0.001 0.0 10 100 1000 10 000 100 000 0 2 4 6 8 10 12 14 Frequency (Hz) V+ - Supply Voltage (V) Total Harmonic Distortion vs. Frequency Switching Threshold vs. Supply Voltage Document Number: 69934 www.vishay.com S11-1429-Rev. C, 18-Jul-11 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix TEST CIRCUITS V+ VCC ttrf << 55 nnss V+ A0 S1 VS1 VA0, A1 0 V 50 % A1 S2 50 Ω S3 S4 VS2 VS1 or VS2 90 % V+ ENABLE D VO VO 50 % GND V- 300 Ω 35 pF 90 % V- tTRANS tTRANS Figure 1. Transition Time V+ tr < 5 ns V+ VCC tf < 5 ns A0 S1 VS1 VENABLE 0 V 50 % A1 S2 S3 S4 VS1 90 % 90 % ENABLE D VO VO 50 % 50 Ω GND V- 300 Ω 35 pF 0 V V- tON tOFF S1 ON Figure 2. Enable Switching Time V+ VCC ttrf << 55 nnss V+ A0 S1 VS VA0, A1 0 V 50 % S2 A1 50 Ω S3 S4 VS 90 % V+ ENABLE D VO VO GND V- 300 Ω 35 pF 0 V V- tBBM Figure 3. Break-Before-Make www.vishay.com Document Number: 69934 8 S11-1429-Rev. C, 18-Jul-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG604 Vishay Siliconix TEST CIRCUITS V+ V+ tr < 5 ns A0 VCC tf < 5 ns Channel Select A1 VENABLE 0 V OFF ON Rg Sx Vg ENABLE D VO VO ΔVO GND V- 1C nLF CHARGE INJECTION = ΔVO x CL V- Figure 4. Charge Injection V+ V+ Network Analyzer AA01 V+ S1 VIN Vg Rg = 50 Ω AA01 V+ S4 VIN NeVtwgorkR Ag n=a 5ly0z eΩr VOUT VOUT V+ ENABLE D ENABLE D GND V- 50 Ω GND V- 50 Ω V- V- Insertion Loss = 20 log VOUT Off Isolation = 20 log VVOINUT VIN Figure 5. Insertion Loss Figure 6. Off-Isolation V Network Analyzer V+ V VIN A0 S4 A1 Vg Rg = 50 Ω Channel A0 V+ S1 Select | A1 to D | Impedance VOUT S4 Analyzer 50 Ω V+ ENABLE S1 GND V- 50 Ω V+ ENABLE D GND V- V- V- Crosstalk = 20 log VOUT VIN Figure 7. Crosstalk Figure 8. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69934. Document Number: 69934 www.vishay.com S11-1429-Rev. C, 18-Jul-11 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information www.vishay.com Vishay Siliconix Thin miniQFN16 Case Outline A D B Terminal tip 1(46) x b 00..1005MM CCAB 12 11 10 9 9 10 11 12 13 8 8 13 C 14 7 7 14 E 10 15 6 6 15 0. 16 5 5 16 L1 1 2 3 4 4 3 2 1 Pin #1 identifier (5) 15 x L e 0.10C Top view Bottom view 0.10C C A 0.10C Seating plane A3 Side view MILLIMETERS (1) INCHES DIMENSIONS MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0 - 0.05 0 - 0.002 A3 0.15 ref. 0.006 ref. b 0.15 0.20 0.25 0.006 0.008 0.010 D 2.50 2.60 2.70 0.098 0.102 0.106 e 0.40 BSC 0.016 BSC E 1.70 1.80 1.90 0.067 0.071 0.075 L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 N (3) 16 16 Nd (3) 4 4 Ne (3) 4 4 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: T16-0226-Rev. B, 09-May-16 DWG: 6023 Revision: 09-May-16 1 Document Number: 64694 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix 14L TSSOP 3 D CL e Notes: 14 1. All dimensions are in millimeters (angles in degrees) 2. Dimensioning and tolerancing per ANSI Y14.5M-1982 3 Dimension ‘D’ does not include mold flash, protrusions or gate burrs 4 Dimension ‘E1’ does not include internal flash or protrusion 4 5 Dimension ‘b’ does not include dambar protrusion CL E1 E 6 Cross section B to B to be determined at 0.10 mm to 0.25 mm from the lead tip Pin 1 ID mark 1 2 3 Detail ‘A’ 2 A A B 6 Seating Plane B b 1 A R 0.25 5 b Gauge Plane R1 c1 c Seating Plane b1 θ1 L Detail ‘B to B’ Detail ‘A’ L1 SYMBOL MINIMUM NOMINAL MAXIMUM A - - 1.20 A1 0.05 - 0.15 A2 0.80 0.90 1.05 D 4.9 5.0 5.1 E1 4.3 4.4 4.5 E 6.2 6.4 6.6 L 0.45 0.60 0.75 R 0.09 - - R1 0.09 - - b 0.19 - 0.30 b1 0.19 0.22 0.25 c 0.09 - 0.20 c1 0.09 - 0.16 θ1 0° - 8° L1 1.0 ref. e 0.65 BSC ECN: T-07766-Rev. A, 14-Jan-08 DWG: 5962 Document Number: 69938 www.vishay.com Revision: 14-Jan-08 1

PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 1 0.225 (0.0089) 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 www.vishay.com Revision: 05-Mar-10 1

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