DG417L, DG418L, DG419L Vishay Siliconix Precision Monolithic Low-Voltage CMOS Analog Switches DESCRIPTION FEATURES • 2.7 V- thru 12 V single supply or ± 3- thru The DG417L, DG418L, DG419L are low voltage pin-for-pin ± 6 dual supply compatible companion devices to the industry standard (cid:129) On-resistance - R : 14  Available DG417, DG418, DG419 with improved performance. ON (cid:129) Fast switching- t : 28 ns Using BiCMOS wafer fabrication technology allows the ON Available - t : 13 ns DG417L, DG418L, DG419L to operate on single and dual OFF (cid:129) TTL, CMOS compatible supplies. Single supply voltage ranges from 3 V to 12 V while (cid:129) Low leakage: < 100 pA dual supply operation is recommended with ± 3 V to ± 6 V. (cid:129) Material categorization: For definitions of compliance Combining high speed (t : 28 ns), flat R over the analog ON ON please see www.vishay.com/doc?99912 signal range (6 ), minimal insertion lose (up to 100 MHz), APPLICATIONS and excellent crosstalk and off-isolation performance (- 70 dB at 1 MHz), the DG417L, DG418L, DG419L are (cid:129) Precision automatic test equipment (cid:129) Precision data acquisition ideally suited for audio and video signal switching. (cid:129) Communication systems The DG417L and DG418L respond to opposite control logic (cid:129) Battery powered systems as shown in the truth table. The DG419L has an SPDT (cid:129) Computer peripherals configuration. (cid:129) SDSL, DSLAM (cid:129) Audio and video signal routing BENEFITS (cid:129) Widest dynamic range (cid:129) Low signal errors and distortion (cid:129) Break-before-make switching action (cid:129) Simple interfacing FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG417L, DG418L DG419L Dual-In-Line, M SOP-8 and SOIC-8 Dual-In-Line, MSOP-8 and SOIC-8 NC/NO 1 8 COM COM 1 8 NO * 2 7 V- NC 2 7 V- GND 3 6 IN GND 3 6 IN V+ 4 5 V L V+ 4 5 VL To p V iew Top View * Not Connected TRUTH TABLE TRUTH TABLE (DG419L) Logic DG417L DG418L Logic NC NO 0 ON OFF 0 ON OFF 1 OFF ON 1 OFF ON ORDERING INFORMATION (DG417L, DG418L) ORDERING INFORMATION (DG419L) Temp. Range Package Part Number Temp. Range Package Part Number DG417LDY DG419LDY DG417LDY-E3 DG419LDY-E3 8-Pin Narrow SOIC DG417LDY-T1 - 40 °C to 85 °C DG419LDY-T1 DG417LDY-T1-E3 DG419LDY-T1-E3 8-Pin Narrow SOIC DG418LDY 8-Pin MSOP DG419LDQ-T1-E3 DG418LDY-E3 DG418LDY-T1 DG418LDY-T1-E3 DG417LDQ-T1-E3 8-Pin MSOP DG418LDQ-T1-E3 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 71763 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1856-Rev. G, 19-Aug-13 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit V+ to V- - 0.3 to 13 GND to V- 7 V (GND - 0.3) to (V+) + 0.3 V L I , COM, NC, NOa - 0.3 to (V+ + 0.3) N or 30 mA, whichever occurs first Continuous Current (Any Terminal) 30 mA Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature (AK, DQ, DY Suffix) - 65 to 150 °C 8-Pin MSOPc 320 Power Dissipation (Packages)b 8-Pin SOICc 400 mW 8-Pin CerDIPd 600 Notes: a. Signals on NC, NO, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 25 °C. d. Derate 12 mW/°C above 75 °C. SPECIFICATIONS (Single Supply 12 V) Test Conditions A Suffix Limits D Suffix Limits Unless Otherwise Specified - 55 °C to 125 °C - 40 °C to 85 °C V+ = 12 V, V- = 0 V Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit Analog Switch Analog Signal Rangee VANALOG Full 0 12 0 12 V V+ = 10.8 V, V- = 0 V Room 13 20 20 On-Resistance RON INO, INC = 5 mA, VCOM = 2 V / 9 V Full 32 23.5  INO(off) Room - 1 1 - 1 1 Switch Off Leakage Current INC(off) VCOM = 1 V / 11 V Full - 15 15 - 10 10 V , V = 11 V / 1 V NO NC Room - 1 1 - 1 1 I nA COM(off) Full - 15 15 - 10 10 Room - 1 1 - 1 1 Channel On Leakage Current ICOM(on) VNO, VNC = VCOM = 11 V / 1 V Full - 15 15 - 10 10 Digital Control Input Current I or I Full 0.01 - 1.5 1.5 - 1 1 µA INL INH Dynamic Characteristics Room 28 43 43 Turn-On Time tON R = 300 , C = 35 pF Full 50 46 L L Turn-Off Time tOFF VNO, VNC = 5 V, see figure 2 RFouolml 13 3315 3312 ns DG419L only, V , V = 5 V Break-Before-Make Time Delay tD R = 300 , CNC = 3N5O pF Room 13 L L Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 1 pC Off-Isolatione OIRR Room - 71 Channel-to-Channel Crosstalke XTALK RL = 50 , CL = 5 pF , f = 1 MHz Room - 71 dB C Source Off Capacitancee NO(off) Room 5 CNC(off) VIN = 0 or V+, f = 1 MHz pF Channel-On Capacitancee CON Room 15 Power Supplies Room 0.02 1 1 Positive Supply Current I+ Full 7.5 5 Room - 0.002 - 1 - 1 Negative Supply Current I- Full - 7.5 - 5 VIN = 0 or VL µA Room 0.002 1 1 Logic Supply Current IL Full 7.5 5 Room - 0.002 - 1 - 1 Ground Current IGND Full - 7.5 - 5 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71763 2 S13-1856-Rev. G, 19-Aug-13 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Dual Supply ± 5 V) Test Conditions A Suffix Limits D Suffix Limits Unless Otherwise Specified - 55 °C to 125 °C - 40 °C to 85 °C V+ = 5 V, V- = - 5 V Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit Analog Switch Analog Signal Rangee VANALOG Full - 5 5 - 5 5 V V+ = 5 V, V- = - 5 V Room 14 18.5 18.5 On-Resistance RON I , I = 5 mA, V = ± 3.5 V Full 30 21  NO NC COM INO(off) V+ = 5.5 , V- = - 5.5 V Room - 1 1 - 1 1 Switch Off INC(off) V = ± 4.5 V Full - 15 15 - 10 10 Leakage Currenta COM Room - 1 1 - 1 1 ICOM(off) VNO, VNC = ± 4.5 V Full - 15 15 - 10 10 nA Channel On V+ = 5.5 V, V- = - 5.5 V Room - 1 1 - 1 1 I Leakage Currenta COM(on) VNO, VNC = VCOM = ± 4.5 V Full - 15 15 - 10 10 Digital Control Input Currenta IINL or IINH Full 0.05 - 1.5 1.5 - 1 1 µA Dynamic Characteristics Room 30 41 41 Turn-On Timee tON RL = 300 , CL = 35 pF Full 50 44 Turn-Off Timee tOFF VNO, VNC = ± 3.5 V, see figure 2 RFouolml 16 3326 3323 ns BDreelaayke-Before-Make Time tD DG4R19 L= o3n0l0y, V,N CO, V= N3C5 =p F3.5 V Room 10 L L R = 300 , C = 35 pF TransitionTime tTRANS V L= ± 3.5 V, VL = ± 3.5 V Room 33 47 47 S1 S2 Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 3 pC Off-Isolatione OIRR Room - 71 Channel-to-Channel RL = 50 , CL = 5 pF , f = 1 MHz dB Crosstalke XTALK Room - 76 C Source Off Capacitancee CNO(off) Room 5.2 NC(off) f = 1 MHz pF Channel-On Capacitancee CON Room 15 Power Supplies Room 0.03 1 1 Positive Supply Currente I+ Full 7.5 5 Room - 0.002 - 1 - 1 Negative Supply Currente I- Full - 7.5 - 5 VIN = 0 or VL µA Room 0.002 1 1 Logic Supply Currente IL Full 7.5 5 Room - 0.002 - 1 - 1 Ground Currente IGND Full - 7.5 - 5 Document Number: 71763 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1856-Rev. G, 19-Aug-13 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Single Supply 5 V) Test Conditions A Suffix Limits D Suffix Limits Unless Otherwise Specified - 55 °C to 125 °C - 40 °C to 85 °C V+ = 5 V, V- = 0 V Parameter Symbol VL = 5 V, VIN = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit Analog Switch Analog Signal Rangee VANALOG Full 5 5 V On-Resistancee RON V+ =V 4.5 V ,= IN 1O V, ,I N3C.5 = V 5 mA RFouolml 26 3560.5 3460..55  COM Dynamic Characteristics Room 37 49 49 Turn-On Timee tON RL = 300 , CL = 35 pF Full 60 54 Turn-Off Timee tOFF VNO, VNC = 3.5 V, see figure 2 RFouolml 16 3315 3312 ns BDreelaayke-Before-Make Time tD DG4R19 L= o3n0l0y, V,N CO, V= N3C5 =p F3.5 V Room 19 L L Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 1 nF Room 0.4 pC Power Supplies Room 0.02 1 1 Positive Supply Currente I+ Full 7.5 5 Room - 0.002 - 1 - 1 Negative Supply Currente I- Full - 7.5 - 5 VIN = 0 or VL µA Room 0.002 1 1 Logic Supply Currente IL Full 7.5 5 Room - 0.002 - 1 - 1 Ground Currente IGND Full - 7.5 - 5 www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71763 4 S13-1856-Rev. G, 19-Aug-13 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix SPECIFICATIONS (Single Supply 3 V) Test Conditions A Suffix Limits D Suffix Limits Unless Otherwise Specified - 55 °C to 125 °C - 40 °C to 85 °C V+ = 3 V, V- = 0 V Parameter Symbol VL = 3 V, VIN = 2 V, 0.4 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit Analog Switch Analog Signal Rangee VANALOG Full 0 3 0 3 V V+ = 2.7 V, V- = 0 V Room 70 70 On-Resistance RON I , I = 5 mA, V = 0.5 V, 2.2 V Full 47 80 75  NO NC COM INO(off) Room - 1 1 - 1 1 Switch Off INC(off) V+ = 3.3 , V- = 0 V Full - 15 15 - 10 10 Leakage Currenta VCOM = 1, 2 V, VNO, VNC = 2, 1 V Room - 1 1 - 1 1 ICOM(off) Full - 15 15 - 10 10 nA Channel On V+ = 3.3 V, V- = 0 V Room - 1 1 - 1 1 I Leakage Currenta COM(on) VNO, VNC = VCOM = 1 V, 2 V Full - 15 15 - 10 10 Digital Control Input Currenta IINL or IINH Full 0.005 - 1.5 1.5 - 1 1 µA Dynamic Characteristics Room 65 75 75 Turn-On Time tON RL = 300 , CL = 35 pF Full 95 85 Turn-Off Time tOFF VNO, VNC = 1.5 V, see figure 2 RFouolml 26 4415 4413 ns BDreelaayk-Before-Make Time tD DG4R19 L= o3n0l0y, V,N CO, V= N3C5 =p F1.5 V Room 33 L L Charge Injectione QINJ Vg = 0 V, Rg = 0 , CL = 10 nF Room 1 pC Off-Isolatione OIRR Room - 71 Channel-to-Channel RL = 50 , CL = 5 pF , f = 1 MHz dB Crosstalke XTALK Room - 77 C Source Off Capacitancee CNO(off) Room 5.6 NC(off) f = 1 MHz pF Channel On Capacitancee CD(on) Room 16 Notes: a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. V = input voltage to perform proper function. IN Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71763 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1856-Rev. G, 19-Aug-13 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 80 V+ = 2.7 V A = 125 °C T = 25 °C 70 IS = 5 mA B = 85 °C 50 IS = 5 mA CD == -2 54 0° C°C Ωstance () 40 V+ = 2.7 V Ωsistance () 5600 CAB E V=+ - =5 54 .°5C V n-Resi 30 V+ = 4.5 V On-Re 40 E D AB - O 20 - N 30 C ON V+ = 10.8 V RO 20 D R E 10 10 0 0 0 3 6 9 1 2 0 1 2 3 4 5 VCOM - Analog Vo ltage (V) VCOM - Analog Vo ltage (V) R vs. V and Supply Voltage R vs. Analog Voltage and Temperature ON COM ON 30 10 000 V ± = ± 5 V V ± = ± 5 V 25 IS = 5 mA V IN = 0 V Ω) ance ( 20 125 °C nt (nA) On-Resist 15 2855 °°CC pply Curre 1000 - N 10 - 40 °C Su RO - 55 °C + - I 5 0 100 - 5 - 3 - 1 1 3 5 - 5 5 - 35 - 1 5 5 25 45 65 85 105 125 V CO M - Analog Voltage (V) Temperature (°C) R vs. Analog Voltage and Temperature Supply Current vs. Temperature ON 10 000 10 m V+ = 12 V 1 m V - = 0 V A) n 1000 nt ( 100 µ A) e p pply Curr 10 µ Current ( 100 IC O M( on) Su 1 µ ge IC O M( off ) + - aka I 100 n Le 10 10 n 1 1 10 100 1 K 10 K 100 K 1 M 10 M - 5 5 - 35 - 1 5 5 25 45 65 85 105 125 Input Switching Frequency (Hz) Temperature (°C) Supply Current vs. Input Switching Frequency Leakage Current vs. Temperature www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71763 6 S13-1856-Rev. G, 19-Aug-13 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 90 V+ = 12 V 80 V - = 0 V s) n 70 A) 20 me ( tO N V+ = 3 V Current (p 0 IC O M( off ) /IC O M( on) witching Ti 5600 eakage IN O ( of f ) /IN C( on) - SOFF 3400 tO N V+ = 5 V tO N V+ = 12 V L - 20 t, tON 20 tO FF V+ = 5 V tO FF V+ = 3 V 10 tO FF V+ = 12 V - 40 0 0 2 4 6 8 1 0 1 2 - 5 5 - 35 - 15 5 25 45 65 85 105 125 VCOM, VNO, VNC - Analog Voltage (V) Temperature (°C) Leakage vs. Analog Voltage Switching Time vs. Temperature and Single Supply Voltage 80 0 70 - 10 Loss e (ns) 60 dB) - 20 hing Tim 50 tO N V+ = ± 3 V (TALK -- 4300 - Switct, tONOFF 234000 tO N V+ = ± 5 t tVO O N FF V V++ = = ± ± 6 3 V V Loss, OIRR, X ---- 87650000 OIRR XTALK VVR+-L== = 50 30 V  V 10 - 90 tO FF V+ = ± 6 V tO FF V+ = ± 5 V 0 - 100 - 55 - 35 - 15 5 25 45 65 85 105 125 100K 1M 10M 100M 1G Temperature (°C) Frequency (Hz) Switching Time vs. Temperature and Insertion Loss, Off -Isolation Dual Supply Voltage Crosstalk vs. Frequency 2.0 12 1.8 10 V+ = 12 V VL = V+ 8 1.6 V) C) 6 V+ = 5 V old ( 1.4 n (p 4 V = ± 5 V h o es 1.2 cti 2 ng Thr 1.0 ge Inje 0 V+ = 3 V - Switchi 00..68 Q - Char --- 642 VT 0.4 - 8 0.2 - 10 0.0 - 12 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 - 6 - 4 - 2 0 2 4 6 8 10 12 V+ - Supply V oltage (V) VCOM - Analog V oltage (V) Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage) Document Number: 71763 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1856-Rev. G, 19-Aug-13 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix SCHEMATIC DIAGRAM (Typical Channel) V+ S VL V- Level Shift/ VIN Drive V+ GND D V- Figure 1. TEST CIRCUITS V L V+ LInopguict V INH 50 % ttr f << 55 nnss V INL SInwpitucth V L V+ OSwutiptcuht tO FF NO or NC COM V IN V OUT V OUT IN 90 % 0.9 x V OUT RL CL GND V- 300 Ω 35 pF Switch 0 V Output tO N V- CL (includes fixture and stray capacitance) V OUT = V IN RL Note: Logic input waveform is inverted for switches that RL + RON have the opposite logic sense control Figure 2. Switching Time VL V+ Logic VINH tr < 5 ns VL V+ Input tf < 5 ns NO COM VINL VNO VO NC VNC RL CL 300 Ω 35 pF VNC = VNO IN VO 90 % GND V- Switch 0 V Output tD tD V- CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG419L) www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71763 8 S13-1856-Rev. G, 19-Aug-13 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix TEST CIRCUITS + 5 V + 15 V V S1 NOV L o r NC COV+M V O LInopguict VV I INNHL 50 % ttrf << 55 nnss NC or NO V S2 RL CL tT RA N S tT RA N S 300 Ω 35 pF V S1 IN V 01 90 % GND V- Switch Output 10 % V 02 V- V S2 CL (includes fixture and stray capacitance) V O = V S RL RL + RON Figure 4. Transition Time (DG419L) VL V+ ΔVO VO VL V+ Rg COM NO or NC IN VO OFF ON OFF Vg IN CL 1 nF GND V- Q = ΔVO x CL IN dependent on switch configuration Input polarity determined by sense of switch. V- VIN = 0 - V+ Figure 5. Charge Injection V L V + C C V L V + V S V IN NO or NC COM Rg = 50 50 IN 0 V or 2.4 V NC or NO V OUT GND V - C V OUT X TA L K Isolation = 20 log V IN V- C = RF bypass Figure 6. Crosstalk (DG419L) Document Number: 71763 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com S13-1856-Rev. G, 19-Aug-13 9 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG417L, DG418L, DG419L Vishay Siliconix TEST CIRCUITS VL V+ C C NO or NC COM Rg = 50 Ω RL IN 50 Ω 0 V, 2.4 V GND V- C V- VCOM Off Isolation = 20 log VNO/NC C = RF Bypass Figure 7. Off Isolation VL V+ C C VL V+ COM Meter IN HP4192A Impedance 0 V, 2.4 V Analyzer NO or NC or Equivalent GND V- f = 1 MHz C V- Figure 8. Source/Drain Capacitances Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71763. www.vishay.com For technical questions, contact: pmostechsupport@vishay.com Document Number: 71763 10 S13-1856-Rev. G, 19-Aug-13 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 7 6 5 E H 1 2 3 4 S D h x 45 C 0.25 mm (Gage Plane) A All Leads q 0.101 mm e B A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A 0.10 0.20 0.004 0.008 1 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 0.157 e 1.27 BSC 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 www.vishay.com 11-Sep-06 1

Package Information Vishay Siliconix MSOP: 8−LEADS JEDEC Part Number: MO-187, (Variation AA and BA) (N/2) Tips) 5 2X NN-1 A B C 0.20 0 0.48 Max 6 0. Detail “B” (Scale: 30/1) Dambar Protrusion E 0.50 1 2 N/2 0.60 b 0.08 M C B S A S 7 Top View b1 e1 With Plating e A See Detail “B” c1 c 0.10 C 6 Section “C-C” -H- A1 Seating Plane Base Metal Scale: 100/1 D (See Note 8) -A- 3 Side View See Detail “A” 0.25 C BSC Parting Line 0.07 R. Min C 2 Places ς Seating Plane A2 0.05 S E1 (cid:2)L 4 -C- 3 -B- 0.95 End View Detail “A” (Scale: 30/1) NOTES: N = 8L 1. Die thickness allowable is 0.203(cid:1)0.0127. MILLIMETERS 2. Dimensioning and tolerances per ANSI.Y14.5M-1994. Dim Min Nom Max Note 3. Dimensions “D” and “E1” do not include mold flash or protrusions, and are A - - 1.10 measured at Datum plane -H- , mold flash or protrusions shall not exceed 0.15 mm per side. A1 0.05 0.10 0.15 A2 0.75 0.85 0.95 4. Dimension is the length of terminal for soldering to a substrate. b 0.25 - 0.38 8 5. Terminal positions are shown for reference only. b1 0.25 0.30 0.33 8 6. Formed leads shall be planar with respect to one another within 0.10 mm at c 0.13 - 0.23 seating plane. c1 0.13 0.15 0.18 7. The lead width dimension does not include Dambar protrusion. Allowable D 3.00 BSC 3 Dambar protrusion shall be 0.08 mm total in excess of the lead width E 4.90 BSC dimension at maximum material condition. Dambar cannot be located on the lower radius or the lead foot. Minimum space between protrusions and an E1 2.90 3.00 3.10 3 adjacent lead to be 0.14 mm. See detail “B” and Section “C-C”. e 0.65 BSC 8. Section “C-C” to be determined at 0.10 mm to 0.25 mm from the lead tip. e1 1.95 BSC 9. Controlling dimension: millimeters. L 0.40 0.55 0.70 4 N 8 5 10. This part is compliant with JEDEC registration MO-187, variation AA and BA. (cid:2) 0(cid:1) 4(cid:1) 6(cid:1) 11. Datums -A- and -B- to be determined Datum plane -H- . ECN: T-02080—Rev. C, 15-Jul-02 DWG: 5867 12. Exposed pad area in bottom side is the same as teh leadframe pad size. Document Number: 71244 www.vishay.com 12-Jul-02 1

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 (0.711) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 7 4) 4 9 0 1 0. 1. ( 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72606 22 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000