DG411, DG412, DG413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches DESCRIPTION FEATURES The DG411 series of monolithic quad analog switches was (cid:129) Halogen-free according to IEC 61249-2-21 Definition designed to provide high speed, low error switching of (cid:129) 44 V supply max. rating precision analog signals. Combining low power (0.35 µW) (cid:129) ± 15 V analog signal range with high speed (t : 110 ns), the DG411 family is ideally ON (cid:129) On-resistance - RDS(on): 25  suited for portable and battery powered industrial and military (cid:129) Fast switching - t : 110 ns ON applications. (cid:129) Ultra low power - P : 0.35 µW D To achieve high-voltage ratings and superior switching (cid:129) TTL, CMOS compatible performance, the DG411 series was built on Vishay (cid:129) Single supply capability Siliconix’s high voltage silicon gate process. An epitaxial (cid:129) Compliant to RoHS Directive 2002/95/EC layer prevents latchup. BENEFITS Each switch conducts equally well in both directions when (cid:129) Widest dynamic range on, and blocks input voltages up to the supply levels when (cid:129) Low signal errors and distortion off. (cid:129) Break-bevor-make switching action The DG411, DG412 respond to opposite control logic as (cid:129) Simple interfacing shown in the Truth Table. The DG413 has two normally open APPLICATIONS and two normally closed switches. (cid:129) Precision automatic test equipment (cid:129) Precision data acquisition (cid:129) Communication systems (cid:129) Battery powered systems (cid:129) Computer peripherals FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG411 DG411 Dual-In-Line and SOIC LCC D1 IN1 NC IN2 D2 IN1 1 16 IN2 Key 3 2 1 20 19 D1 2 15 D2 S1 4 18 S2 S1 3 14 S2 V- 5 17 V+ TRUTH TABLE V- 4 13 V+ NC 6 16 NC Logic DG411 DG412 GNSD4 56 1112 SVL3 GND 7 15 VL 01 OOFNF OOFNF D4 7 10 D3 S4 8 14 S3 Logic “0” 0.8 V IN4 8 9 IN3 9 10 11 12 13 Logic “1” 2.4 V D4 IN4 NC IN3 D3 To p V iew Top View DG413 DG413 Dual-In-Line and SOIC LCC D1 IN1 NC IN2 D2 Key IN1 1 16 IN2 3 2 1 20 19 D1 2 15 D2 S1 4 18 S2 TRUTH TABLE S1 3 14 S2 V- 5 17 V+ Logic SW1, SW4 SW2, SW3 V- 4 13 V+ NC 6 16 NC 0 OFF ON GND 5 12 VL GND 7 15 VL 1 ON OFF DS44 67 1110 SD33 S4 8 14 S3 LLooggiicc ““01”” 02..84 VV 9 10 11 12 13 IN4 8 9 IN3 D4 IN4 NC IN3 D3 To p V iew Top View Document Number: 70050 www.vishay.com S11-1185-Rev. G, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG411DJ DG411DJ-E3 DG412DJ 16-pin plastic DIP DG412DJ-E3 DG413DJ DG413DJ-E3 DG411DY DG411DY-E3 DG411DY-T1 DG411DY-T1-E3 DG412DY DG412DY-E3 - 40 °C to 85 °C 16-pin narrow SOIC DG412DY-T1 DG412DY-T1-E3 DG413DY DG413DY-E3 DG413DY-T1 DG413DY-T1-E3 DG411DQ-E3 DG411DQ-T1-E3 DG412DQ-E3 16-pin TSSOP DG412DQ-T1-E3 DG413DQ-E3 DG413DQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit V + to V - 44 GND to V - 25 VL (GND - 0.3) to (V+) + 0.3 V (V-) -2 to (V+) + 2 Digital Inputsa, V , V S D or 30 mA, whichever occurs first Continuous Current (Any terminal) 30 mA Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) 100 (AK, AZ suffix) - 65 to 150 Storage Temperature °C (DJ, DY suffix) - 65 to 125 16-pin plastic DIPc 470 16-pin narrow SOICd 600 Power Dissipation (Package)b mW 16-pin CerDIPe 900 LCC-20e 900 Notes: a. Signals on S , D , or IN exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 25 °C. d. Derate 7.6 mW/°C above 75 °C. e. Derate 12 mW/°C above 75 °C. www.vishay.com Document Number: 70050 2 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix SPECIFICATIONSa Test Conditions A Suffix D Suffix Unless Specified - 55 °C to 125 °C - 40 °C to 85 °C V + = 15 V, V - = - 15 V Parameter Symbol V = 5 V, V = 2.4 V, 0.8 Vf Temp.b Typ.c Min.d Max.d Min.d Max.d Unit L IN Analog Switch Analog Signal Rangee VANALOG Full - 15 15 - 15 15 V Drain-Source V + = 13.5 V, V - = - 13.5 V Room 25 35 35 On-Resistance RDS(on) I = - 10 mA, V = ± 8.5 V Full 45 45  S D Room ± 0.1 - 0.25 0.25 - 0.25 0.25 I Switch Off Leakage S(off) V + = 16.5, V - = - 16.5 V Full - 20 20 - 5 5 Current I VD = ± 15.5 V, VS = ± 15.5 V Room ± 0.1 - 0.25 0.25 - 0.25 0.25 nA D(off) Full - 20 20 - 5 5 Channel On Leakage V + = 16.5 V, V - = - 16.5 V Room ± 0.1 - 0.4 0.4 - 0.4 0.4 I Current D(on) V = V = ± 15.5 V Full - 40 40 - 10 10 S D Digital Control Input Current, VIN Low IIL VIN under test = 0.8 V Full 0.005 - 0.5 0.5 - 0.5 0.5 µA Input Current, VIN High IIH VIN under test = 2.4 V Full 0.005 - 0.5 0.5 - 0.5 0.5 Dynamic Characteristics Room 110 175 175 Turn-On Time t ON RL = 300 , CL = 35 pF Full 240 220 Turn-Off Time t VS = ± 10 V, see figure 2 Room 100 145 145 ns OFF Full 160 160 Break-Before-Make DG413 only, V = 10 V t S Room 25 Time Delay D RL = 300 , CL = 35 pF Charge Injection Q Vg = 0 V, Rg = 0  Room 5 pC C = 10 nF L Off Isolatione OIRR Room 68 Channel-to-Channel RL = 50 CL = 5 pF, dB X f = 1 MHz Room 85 Crosstalke TALK Source Off Capacitancee CS(off) Room 9 Drain Off Capacitancee CD(off) f = 1 MHz Room 9 pF Channel On C Room 35 Capacitancee D(on) Power Supplies Room 0.0001 1 1 Positive Supply Current I+ Full 5 5 Room - 0.0001 - 1 - 1 Negative Supply Current I- V + = 16.5 V, V - = - 16.5 V Full - 5 - 5 µA Logic Supply Current I VIN = 0 V or 5 V Room 0.0001 1 1 L Full 5 5 Room - 0.0001 - 1 - 1 Ground Current I GND Full - 5 - 5 Document Number: 70050 www.vishay.com S11-1185-Rev. G, 13-Jun-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix SPECIFICATIONSa (for Unipolar Supplies) Test Conditions A Suffix D Suffix Unless Specified - 55 °C to 125 °C - 40 °C to 85 °C Parameter Symbol Temp.b Typ.c Unit V + = 12 V, V - = 0 V V = 5 V, V = 2.4 V, 0.8 Vf Min.d Max.d Min.d Max.d L IN Analog Switch Analog Signal Rangee VANALOG Full 12 12 V Drain-Source V + = 10.8 V, Room 40 80 80 On-Resistance RDS(on) I = - 10 mA, V = 3 V, 8 V Full 100 100  S D Dynamic Characteristics Room 175 250 250 Turn-On Time t ON RL = 300 , CL = 35 pF Hot 400 315 Turn-Off Time t VS = 8 V, see figure 2 Room 95 125 125 ns OFF Hot 140 140 Break-Before-Make DG413 only, V = 8 V t S Room 25 Time Delay D RL = 300 , CL = 35 pF Charge Injection Q Vg = 6 V, Rg = 0 , CL = 10 nF Room 25 pC Power Supplies Room 0.0001 1 1 Positive Supply Current I+ Hot 5 5 Room - 0.0001 - 1 - 1 Negative Supply Current I- Hot - 5 - 5 V + = 13.5 V, V = 0 V or 5 V µA IN Room 0.0001 1 1 Logic Supply Current I L Hot 5 5 Room - 0.0001 - 1 Ground Current I - 5 GND Hot - 5 Notes: a.Refer to process option flowchart. b.Room = 25 °C, Full = as determined by the operating temperature suffix. c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f.V = input voltage to perform proper function. IN Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 50 300 Ωce () 45 TA = 25 °C ± 5 V 250 VL = 5 V an 40 V+ = 3 V n-Resist 3350 ± 8 V 200 VL = 3 V O e ± 10 V n-Sourc 2250 ± 15 V ± 12 V V 150 V+ = 5 V ai 100 Dr 15 - ± 20 V 8 V DS(on) 10 50 12 V 15 V 20 V R 5 0 0 - 20 - 15 - 10 - 5 0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20 VD - Drain Voltage (V) VD - Drain Voltage (V) On-Resistance vs. V and Power Supply Voltage On-Resistance vs. V and Unipolar Supply Voltage D D www.vishay.com Document Number: 70050 4 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 40 35 V+ = 15 V 30 V+ = 15 V ) V- = - 15 V 1200 VVTA- L === -25 15 V5 ° VC ID (off ) esistance ( 2350 125 °C VL = 5 V R D(pA)- 100 IS ( off ) ce On- 20 85 °C , IIS - 20 ID (on) Sour 25 °C - 30 Drain- 15 - - 55 °C - 40 n) S(o 10 - 50 D R - 60 5 - 15 - 10 - 5 0 5 10 15 - 15 - 10 - 5 0 5 10 15 VD or VS - Drain or Source Voltage (V) VD - Drain Voltage (V) Leakage Current vs. Analog Voltage I , I Leakages vs. Temperature D S 100 140 V+ = 15 V 120 V+ = 15 V 80 VV-L == -5 1 V5 V 100 VV-L == -5 1 V5 V CL = 10 nF 60 80 40 60 C) CL = 10 nF C) CL = 1 nF Q (p 20 Q (p 40 20 0 CL = 1 nF 0 - 20 - 20 - 40 - 40 - 60 - 60 - 15 - 10 - 5 0 5 10 15 - 15 - 10 - 5 0 5 10 15 VS - Source Voltage (V) VD - Drain Voltage (V) Charge Injection vs. Analog Voltage Charge Injection vs. Analog Voltage 3.5 240 210 V+ = 15 V 3.0 V- = - 15 V VL = 5 V 2.5 180 VS = 10 V VL = 7.5 V s) 150 V) 2.0 (n tO N (VTH 1.5 6.5 V ,tONOFF19200 tO FF t 1.0 4.5 V 5.5 V 60 0.5 30 0 0 5 10 15 20 25 30 35 40 - 55 - 35 - 15 5 25 45 65 85 105 125 (V+) Temperature (°C) Input Switching Threshold vs. Supply Voltage Switching Time vs. Temperature Document Number: 70050 www.vishay.com S11-1185-Rev. G, 13-Jun-11 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix TYPICAL CHARACTERISTICS (25°C, unless otherwise noted) 100 mA V+ = 15 V V- = - 15 V 10 mA VL = 5 V = 1 SW 1 mA = 4 SW I+, I- LY 100 µA P P U S I 10 µA IL 1 µA 100 nA 10 nA 10 100 1K 10K 100K 1M 10M f - Frequency (Hz) Supply Current vs. Input Switching Frequency SCHEMATIC DIAGRAM (Typical Channel) V+ S VL V- Level Shift/ VIN Drive V+ GND D V- Figure 1. TEST CIRCUITS + 5 V + 15 V Logic 3 V tr < 20 ns Input 50 % tf < 20 ns 0 V VL V+ tO N S D Switch ± 10 V VO Input* VS VO 90 % IN RL CL GND V- 300  35 pF Switch 0 V Output tO N 90 % - 15 V SInwpiutcth* - VVO S CL (includes fixture and stray capacitance) * VS = 10 V for t ON, V S = - 10 V for t OFF VO = V S RL Note: Logic input waveform is inverted for switches that RL + r DS(on) have the opposite logic sense control Figure 2. Switching Time www.vishay.com Document Number: 70050 6 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix TEST CIRCUITS + 5 V + 15 V Logic 3 V Input 50 % VL V+ 0 V VS 1 S1 D1 VO 1 VS 1 IN1 VO 1 90 % VS 2 S2 D2 VO 2 Switch 0 V Output IN2 RL 1 CL 1 VVO S 22 90 % 300  35 pF GND V- R L2 CL 2 Switch 0 V 300  35 pF Output tD tD - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make (DG413) VO + 5 V + 15 V VO VL V+ INX Rg OFF ON OFF S D VO Vg IN CL 3 V 10 nF OFF ON OFF GND V- INX Q = VO x CL - 15 V INX dependent on switch configuration Input polarity determined by sense of switch. Figure 4. Charge Injection + 5 V + 15 V C C VL V+ VS S1 D1 Rg = 50  50  IN1 0 V, 2.4 V S2 D2 NC VO 0 V, 2.4 V IN2 RL GND V- C VS XTALK Isolation = 20 log VO - 15 V C = RF bypass Figure 5. Crosstalk Document Number: 70050 www.vishay.com S11-1185-Rev. G, 13-Jun-11 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

DG411, DG412, DG413 Vishay Siliconix + 5 V + 15 V + 5 V + 15 V C C C C VL V+ VS S D VO VL V+ S Rg = 50  IN R50L  Meter 0 V, 2.4 V IN HP4192A Impedance GND V- C 0 V, 2.4 V Analyzer D or Equivalent GND V- - 15 V C VS Off Isolation = 20 log VO - 15 V C = RF Bypass Figure 6. Off Isolation Figure 7. Source/Drain Capacitances APPLICATIONS Single Supply Operation: Summing Amplifier The DG411, DG412, DG413 can be operated with unipolar When driving a high impedance, high capacitance load such supplies from 5 V to 44 V. These devices are characterized as shown in figure 8, where the inputs to the summing and tested for unipolar supply operation at 12 V to facilitate amplifier have some noise filtering, it is necessary to have the majority of applications. In single supply operation, V+ is shunt switches for rapid discharge of the filter capacitor, thus tied to VL and V- is tied to 0 V. See Input Switching Threshold preventing offsets from occurring at the output. vs. Supply Voltage curve for V versus input threshold L requirments. R1 R2 VIN 1 C1 R5 R3 R4 VIN 2 - VOUT + C2 R6 DG413 Figure 8. Summing Amplifier Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70050. www.vishay.com Document Number: 70050 8 S11-1185-Rev. G, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information Vishay Siliconix (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:9)(cid:2)(cid:10)(cid:11)(cid:12)(cid:5)(cid:5)(cid:5)(cid:13)(cid:14)(cid:15)(cid:16)(cid:17)(cid:8)(cid:18) JEDEC Part Number: MS-012 (cid:19)(cid:3)(cid:16)(cid:16)(cid:3)(cid:19)(cid:17)(cid:20)(cid:17)(cid:9)(cid:1) (cid:3)(cid:7)(cid:4)(cid:21)(cid:17)(cid:1) Dim Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.38 0.51 0.015 0.020 C 0.18 0.23 0.007 0.009 D 9.80 10.00 0.385 0.393 E 3.80 4.00 0.149 0.157 16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC E H 5.80 6.20 0.228 0.244 L 0.50 0.93 0.020 0.037 1 2 3 4 5 6 7 8 (cid:1) 0(cid:1) 8(cid:1) 0(cid:1) 8(cid:1) ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 D H C All Leads 0.101 mm A1 (cid:1) e B L 0.004 IN Document Number: 71194 www.vishay.com 02-Jul-01 1

Package Information Vishay Siliconix (cid:1)(cid:2)(cid:3)(cid:1)(cid:4)(cid:5)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:2)(cid:5) 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° C MAX B1 e1 B eA (cid:12)(cid:3)(cid:9)(cid:9)(cid:3)(cid:12)(cid:10)(cid:13)(cid:10)(cid:14)(cid:15) (cid:3)(cid:16)(cid:17)(cid:18)(cid:10)(cid:15) Dim Min Max Min Max A 3.81 5.08 0.150 0.200 A1 0.38 1.27 0.015 0.050 B 0.38 0.51 0.015 0.020 B1 0.89 1.65 0.035 0.065 C 0.20 0.30 0.008 0.012 D 18.93 21.33 0.745 0.840 E 7.62 8.26 0.300 0.325 E1 5.59 7.11 0.220 0.280 e1 2.29 2.79 0.090 0.110 eA 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 Q1 1.27 2.03 0.050 0.080 S 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 www.vishay.com 06-Jul-01 1

Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 B 0.22 0.28 0.38 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 www.vishay.com 23-Oct-06 1

PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.055 (1.40) 0.281 (7.15) 0.171 (4.35) 0.014 0.026 0.012 (0.35) (0.65) (0.30) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.047 (1.194) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 0.022 0.050 0.028 (0.559) (1.270) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72608 24 Revision: 21-Jan-08

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: DG412AK DG413DY DG413DJ DG413AK DG413DJ-E3 DG413DY-E3 DG412DJ DG412DY DG411DJ DG411DY DG411DY-T1 DG412DY-T1 DG413DY-T1 DG411DY-E3 DG411DJ-E3 DG412DY-E3 DG412DJ-E3 DG411DY-T1-E3 DG412DY-T1-E3 DG413DY-T1-E3 DG411DQ-T1-E3 DG413DQ-T1-E3 DG412AK-E3 DG411AK- E3 DG412DQ-T1-E3