DG2706 Vishay Siliconix High Speed, Low Voltage, 3 , Quad SPDT CMOS Analog Switch DESCRIPTION FEATURES The DG2706 is a high speed, low voltage, low • Operation voltage range: 1.65 V to 4.3 V On-resistance, quad SPDT (single pole double throw) (cid:129) Guaranteed On-resistance: 3.0  at 3.15 V analog switch. It operates from a 1.65 V to 4.3 V single (cid:129) Low voltage logic threshold power supply and achieves 3  switch On-resistance. When (cid:129) Low crosstalk: - 70 dB turned on, each switch conducts equally in both directions. (cid:129) High off-isolation: - 90 dB Its switch on resistance flatness is 0.6  and channel to (cid:129) Ultra small package: miniQFN16 of 1.8 mm x 2.6 mm channel matching is of 0.3  when powered with single 3.15 V supply. All channels guaranteed break before make APPLICATIONS switching. (cid:129) Dual SIM card switch Control logic input has 0.5 V to 1.65 V logic threshold. It features a 190 MHz - 3 dB bandwidth, - 90 dB crosstalk and (cid:129) A/V and analog signal routing - 70 dB off-isolation at 1 MHz. (cid:129) Battery operated devices The DG2706 is an ideal fit for low voltage battery powered (cid:129) Data acquisition systems devices switching audio, video, multi-media data streams, (cid:129) Communications systems and control signals between different functional circuits or (cid:129) Medical and ATE equipments ports. The DG2707 comes in a small miniQFN-16 lead package (1.8 mm x 2.6 mm x 0.75 mm). As a committed partner to community and the environment, Vishay Siliconix manufactures this product with the lead(Pb)-free device terminations and is 100 % RoHS compliant. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniQFN-16L NO4 GND IN1 NC3 12 11 10 9 COM4 13 8 COM3 NC4 14 7 NO3 VXX NO1 15 6 NC2 COM1 16 5 COM2 1 2 3 4 Pin 1: LONG LEAD C1 V+ N2 O2 N I N Top View Device Marking: VXX Traceability Code: V is DG2706DN XX = Date/Lot ORDERING INFORMATION Temp. Range Package Part Number - 40 °C to 85 °C miniQFN-16 DG2706DN-T1-E4 Document Number: 68392 www.vishay.com S11-0176-Rev. B, 07-Feb-11 1

DG2706 Vishay Siliconix TRUTH TABLE DG2706 QUAD SPDT, miniQFN-16L Select Input On Switches IN1 (Pin 10) IN2 (Pin 3) Description (Pin) Common (Pin) 0 X NC1 (Pin 1) COM1 (Pin 16) 1 X NO1 (Pin 15) 0 X NC4 (Pin 14) COM4 (Pin 13) 1 X NO4 (Pin 12) 0 NC2 (Pin 6) X COM2 (Pin 5) 1 NO2 (Pin 4) 0 NC3 (Pin 9) X COM3 (Pin 3) 1 NO3 (Pin 7) ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Limit Unit V+ - 0.3 to 5.0 Reference to GND V IN, COM, NC, NOa - 0.3 to (V+ + 0.3) Current (Any terminal except NO, NC or COM) 30 Continuous Current (NO, NC, or COM) ± 250 mA Peak Current (Pulsed at 1 ms, 10 % Duty Cycle) ± 500 Storage Temperature (D Suffix) - 65 to 150 °C Thermal Resistance (Package)b miniQFN-16 152 °C/W Power Dissipation (Package)b miniQFN-16c, d 525 mW Notes: a.Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b.All leads welded or soldered to PC board. c. Derate 6.6 mW/°C above 70 °C d.Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. www.vishay.com Document Number: 68392 2 S11-0176-Rev. B, 07-Feb-11

DG2706 Vishay Siliconix SPECIFICATIONS (V+ = 3.15 V) Limits - 40 °C to 85 °C Test Conditions Parameter Symbol Otherwise Unless Specified Temp.b Min.d Typ.c Max.d Unit Analog Switch Analog Signal Rangee V R Full 0 V+ V ANALOG DS(on) Room 3 5.5 On-Resistance R V+ = 3.15 V, I = 10 mA, V = 1.0 V DS(on) NO/NC COM Full 6  R Match R V+ = 3.15 V, I = 10 mA, V = 1.0 V Room 0.3 ON (ON) NO/NC COM RON Resistance Flatness RON V+ = 3.15 V, INO/NC = 10 mA, Room 0.6 Room - 5 5 I NO/NC(off) Channel Off Leakage V+ = 3.6 V, V = 0.5 V/3 V, Full - 10 10 NO/NC Current VCOM = 3 V/0.5 V Room - 5 5 I nA COM(off) Full - 10 10 Channel-On Leakage Room - 10 10 I V+ = 3.6 V, V , V = 3 V/0.5 V Current COM(on) NO/NC COM Full - 20 20 Digital Control Input High Voltage V Full 1.65 INH V Input Low Voltage V Full 0.4 INL Input Current I or I V = 0 or V+ Full - 1 1 µA INL INH IN Dynamic Characteristics Room 1 Break-Before-Make Time t BBM Full 5 Room 20 45 Enable Turn-On Time t V , V = 1.5 V, R = 50 , C = 35 pF ns ON(EN) NO NC L L Full 55 Room 15 35 Enable Turn-Off Time t OFF(EN) Full 45 Charge Injectiond Q C = 1 nF, R = 0 , V = 2 V Room 3 pC INJ L GEN NC/NO Off-Isolationd OIRR Room - 70 V+ = 3.15 V, f = 1 MHz, R = 50 , C = 5 pF dB Crosstalkd, f X L L Room - 90 TALK Bandwidthd BW V+ = 3.15 V, R = 50 , C = 5 pF, - 3 dB Room 190 MHz L L Total Harmonic Distortiond THD V+ = 3.15 V, R = 600  Room 0.02 % LOAD CS 16 N , N Off Capacitanced NC(off) O C CS V+ = 3.15 V, f = 1 MHz Room 15 pF NO(on) Channel-On Capacitanced C 31 COM(on) Power Supply Power Supply Range V+ 1.65 4.3 V Power Supply Current I+ V = 0 or V+ Full 1 µA IN Notes: a. Room = 25 °C, Full = as determined by the operating suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for design aid only, not guaranteed nor subject to production testing. d. Guarantee by design, not subjected to production test. e. V = input voltage to perform proper function. IN f. Crosstalk measured between channels. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68392 www.vishay.com S11-0176-Rev. B, 07-Feb-11 3

DG2706 Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) A 26 40 24 T = 25 °C ION = 10 mA 35 22 COM V+ = 1.65 V, ION = 10 mA ΩResistance () 11124680 V+ = 1.65 V ΩResistance () 223050 + +8 52 5°C °C On- 12 On- - 40 °C - N 10 - N 15 O O R 8 R 10 6 V+ = 3.15 V V+ = 3.6 V 5 4 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 VD - Analog Voltage (V) VD - Analog Voltage (V) R vs. V and Single Supply Voltage R vs. Analog Voltage and Temperature ON D ON 5 10 DG2706 V+ = 3.15 V, ION = 10 mA RL = 600 Ω VSignal = 1 VRMS 4 1 Ω) e ( + 85 °C c V+ = 1.65 V n sta + 25 °C %) esi 3 D ( 0.1 R H On- - 40 °C T V+ = 3.15 V - N O R 2 0.01 V+ = 3.6 V 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 100 1000 10000 100000 VD - Analog Voltage (V) Frequency (Hz) R vs. Analog Voltage and Temperature Switching Threshold vs. Supply Voltage ON 5 10 mA V+ = 3.6 V, ION = 10 mA 1 mA Ωstance () 4 + 85 °C urrent (A) 11000 µµAA R - On-ResiON 23 - 40 °C + 25 °C I+ - Supply C 110100 µnnAAA VV++ == 33..165 V V V+ = 1.65 V 1 nA 1 100 pA 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 100 1K 10K 100K 1M 10M VD - Analog Voltage (V) Input Switching Frequency (Hz) R vs. Analog Voltage and Temperature Supply Current vs. Input Switching Frequency ON www.vishay.com Document Number: 68392 4 S11-0176-Rev. B, 07-Feb-11

DG2706 Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) A 1000 10 V+ = 3.15 V Loss 0 - 10 V+ = 3.15 V eakage Currrent (pA) 11000 ICOM(on) INO/NC(off) (dB)s, OIRR, X TALK ----- 6543200000 RL = 50 Ω OIRR XTALK L s o - 70 L ICOM(off) - 80 - 90 1 - 100 - 60 - 40 - 20 0 20 40 60 80 100 120 140 100K 1M 10M 100M 1G Temperature (°C) Frequency (Hz) Leakage Current vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency 1.5 1.4 1.3 V) d ( 1.2 ol sh 1.1 e hr T 1.0 g n hi 0.9 c wit S 0.8 - T V 0.7 0.6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V+ - Supply Voltage (V) Switching Threshold vs. Supply Voltage Document Number: 68392 www.vishay.com S11-0176-Rev. B, 07-Feb-11 5

DG2706 Vishay Siliconix TEST CIRCUITS V+ LInopguict VINH 50 % ttrf << 55 nnss V+ VINL Switch Output Switch NO or NC COM Input VOUT Logic 0.9 x VOUT IN Switch Input RL CL Output GND 50 Ω 35 pF 0 V tON tOFF 0 V Logic "1" = Switch on CL (includes fixture and stray capacitance) Logic input waveforms inverted for switches that have the opposite logic sense. VOUT = VCOM(R +RLR ) L ON Figure 1. Switching Time V+ Logic VINH tr < 5 ns V+ Input tf < 5 ns NO COM VINL VNO VO NC VNC RL CL 50 Ω 35 pF VNC = VNO IN VO 90 % GND Switch 0 V Output tD tD CL (includes fixture and stray capacitance) Figure 2. Break-Before-Make Interval V+ Rgen NC or NO V+ COM VOUT ΔVOUT VOUT + IN IN CL = 1 nF On On Vgen VIN = 0 - V+ Off GND Q = ΔVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. Figure 3. Charge Injection www.vishay.com Document Number: 68392 6 S11-0176-Rev. B, 07-Feb-11

DG2706 Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ NC or NO V+ 0 V, 2.4 V COM IN Meter COM COM IN HP4192A 0 V, 2.4 V Impedance Analyzer RL GND NC or NO or Equivalent GND f = 1 MHz Analyzer V COM OffIsolation = 20log V NO /NC Figure 4. Off-Isolation Figure 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68392. Document Number: 68392 www.vishay.com S11-0176-Rev. B, 07-Feb-11 7

Package Information www.vishay.com Vishay Siliconix Thin miniQFN16 Case Outline A D B Terminal tip 1(46) x b 00..1005MM CCAB 12 11 10 9 9 10 11 12 13 8 8 13 C 14 7 7 14 E 10 15 6 6 15 0. 16 5 5 16 L1 1 2 3 4 4 3 2 1 Pin #1 identifier (5) 15 x L e 0.10C Top view Bottom view 0.10C C A 0.10C Seating plane A3 Side view MILLIMETERS (1) INCHES DIMENSIONS MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0 - 0.05 0 - 0.002 A3 0.15 ref. 0.006 ref. b 0.15 0.20 0.25 0.006 0.008 0.010 D 2.50 2.60 2.70 0.098 0.102 0.106 e 0.40 BSC 0.016 BSC E 1.70 1.80 1.90 0.067 0.071 0.075 L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 N (3) 16 16 Nd (3) 4 4 Ne (3) 4 4 Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: T16-0226-Rev. B, 09-May-16 DWG: 6023 Revision: 09-May-16 1 Document Number: 64694 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 1 0.225 (0.0089) 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 www.vishay.com Revision: 05-Mar-10 1

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