DG211B, DG212B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES • ± 22 V supply voltage rating The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These (cid:129) TTL and CMOS compatible logic devices are fabricated in Vishay Siliconix’ proprietary silicon (cid:129) Low on-resistance - R : 50  DS(on) gate CMOS process, resulting in lower on-resistance, lower (cid:129) Low leakage - I : 20 pA D(on) leakage, higher speed, and lower power consumption. (cid:129) Single supply operation possible These quad single-pole single-throw switches are designed (cid:129) Extended temperature range for a wide variety of applications in telecommunications, (cid:129) Fast switching - t : 120 ns ON instrumentation, process control, computer peripherals, etc. (cid:129) Low charge injection - Q: 1 pC An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B BENEFITS can handle up to ± 22 V, and have an improved continuous (cid:129) Wide analog signal range current rating of 30 mA. An epitaxial layer prevents latchup. (cid:129) Simple logic interface All devices feature true bi-directional performance in the on (cid:129) Higher accuracy condition, and will block signals to the supply levels in the off (cid:129) Minimum transients condition. (cid:129) Reduced power consumption (cid:129) Superior to DG211, DG212 The DG211B is a normally closed switch and the DG212B is (cid:129) Space savings (TSSOP) a normally open switch. (see Truth Table.) APPLICATIONS (cid:129) Industrial instrumentation (cid:129) Test equipment (cid:129) Communications systems (cid:129) Disk drives (cid:129) Computer peripherals (cid:129) Portable instruments (cid:129) Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG211B Dual-In-Line, SOIC and TSSOP IN1 1 16 IN2 TRUTH TABLE D1 2 15 D2 Logic DG211B DG212B S1 3 14 S2 0 ON OFF 1 OFF ON V- 4 13 V+ Logic “0” 0.8 V GND 5 12 VL Logic “1” 2.4 V S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 70040 www.vishay.com S11-0179-Rev. J, 07-Feb-11 1

DG211B, DG212B Vishay Siliconix ORDERING INFORMATION Temp. Range Package Standard Part Number Lead (Pb)-free Part Number DG211BDJ DG211BDJ-E3 16-Pin Plastic DIP DG212BDJ DG212BDJ-E3 DG211BDY DG211BDY-E3 DG211BDY-T1 DG211BDY-T1-E3 16-Pin Narrow SOIC DG212BDY DG212BDY-E3 - 40 °C to 85 °C DG212BDY-T1 DG212BDY-T1-E3 DG211BDQ DG211BDQ-E3 DG211BDQ-T1 DG211BDQ-T1-E3 16-Pin TSSOP DG212BDQ DG212BDQ-E3 DG212BDQ-T1 DG212BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted) A Parameter Limit Unit Voltages Referenced, V+ to V- 44 GND 25 V (V-) - 2 to (V+) + 2 Digital Inputsa, V , V S D or 30 mA, whichever occurs first Current (Any terminal) 30 mA Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 Storage Temperature - 65 to 125 °C 16-Pin Plastic DIPc 470 Power Dissipation (Package)b mW 16-Pin Narrow SOIC and TSSOPd 640 Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 6.5 mW/°C above 75 °C. d. Derate 7.6 mW/°C above 75 °C. SCHEMATIC DIAGRAM (Typical Channel) V+ SX VL Level V- Shift/ Drive V+ INX DX GND V- Figure 1. www.vishay.com Document Number: 70040 2 S11-0179-Rev. J, 07-Feb-11

DG211B, DG212B Vishay Siliconix SPECIFICATIONS Test Conditions D Suffix Unless Otherwise Specified - 40 °C to 85 °C V+ = 15 V, V- = - 15 V Parameter Symbol V = 5 V, V = 2.4 V, 0.8 Ve Temp.a Min.b Typ.c Max.b Unit L IN Analog Switch Analog Signal Ranged V Full - 15 15 V ANALOG Drain-Source Room 85 R 45 On-Resistance DS(on) V = ± 10 V, I = 1 mA Full 100  D S R Match R Room 2 DS(on) DS(on) Room - 0.5 0.5 Source Off Leakage Current I V = ± 14 V, V = ± 14 V ± 0.01 S(off) S D Full - 5 5 Room - 0.5 0.5 Drain Off Leakage Current I V = ± 14 V, V = ± 14 V ± 0.01 nA D(off) D S Full - 5 5 Room - 0.5 0.5 Drain On Leakage Current I V = V = ± 14 V ± 0.02 D(on) S D Full - 10 10 Digital Control Input Voltage High V Full 2.4 INH V Input Voltage Low V Full 0.8 INL Input Current I or I V or V Full - 1 1 µA INH INL INH INL Input Capacitance C Room 5 pF IN Dynamic Characteristics Turn-On Time tON VS = 10 V Room 300 ns Turn-Off Time t see figure 2 Room 200 OFF Charge Injection Q C = 1000 pF, V = 0 V, R = 0  Room 1 pC L gen gen Source-Off Capacitance C Room 5 S(off) V = 0 V, f = 1 MHz Drain-Off Capacitance C S Room 5 pF D(off) Channel-On Capacitance C V = V = 0 V, f = 1 MHz Room 16 D(on) D S Off Isolation OIRR C = 15 pF, R = 50  Room 90 L L dB Channel-to-Channel Crosstalk XTALK VS = 1 VRMS, f = 100 kHz Room 95 Power Supply Room 10 Positive Supply Current I+ Full 50 V = 0 or 5 V IN Room - 10 Negative Supply Current I- µA Full - 50 Room 10 Logic Supply Current I L Full 50 Power Supply Range for V Full ± 4.5 ± 22 V Continuous Operation OP Document Number: 70040 www.vishay.com S11-0179-Rev. J, 07-Feb-11 3

DG211B, DG212B Vishay Siliconix SPECIFICATIONS (for Single Supply) Test Conditions D Suffix Unless Otherwise Specified - 40 °C to 85 °C V+ = 12 V, V- = 0 V Parameter Symbol V = 5 V, V = 2.4 V, 0.8 Ve Temp.a Min.b Typ.c Max.b Unit L IN Analog Switch Analog Signal Ranged V Full 0 12 V ANALOG Drain-Source Room 160 R V = 3 V, 8 V, I = 1 mA 90  On-Resistance DS(on) D S Full 200 Dynamic Characteristics Turn-On Time tON VS = 8 V Room 300 ns Turn-Off Time t see figure 1 Room 200 OFF Charge Injection Q C = 1 nF, V = 6 V, R = 0  Room 4 pC L gen gen Power Supply Room 10 Positive Supply Current I+ Full 50 V = 0 or 5 V IN Room - 10 Negative Supply Current I- µA Full - 50 Room 10 Logic Supply Current I L Full 50 Power Supply Range for V Full + 4.5 + 25 V Continuous Operation OP Notes: a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. V = input voltage to perform proper function. IN Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) A 11 0 100 V+ = 15 V Ωsistance () 1890000 ± 5 V Ωstance () 789000 V- = - 15 V On-Re 70 n-Resi 60 125 °C Source 5600 ± 10 V± 15 V ource O 4500 258 5°C ° C - Drain-n) 3400 ± 20 V - Drain-S 2300 - 55 °C S(o on) D 20 S( 10 R D R 10 0 - 20 - 16 - 12 - 8 - 4 0 4 8 12 1 6 2 0 - 15 - 10 - 5 0 5 10 15 VD - Drain Voltage (V) VD - Drain Vo ltage (V) R vs. V and Power Supply Voltages R vs. V and Temperature DS(on) D DS(on) D www.vishay.com Document Number: 70040 4 S11-0179-Rev. J, 07-Feb-11

DG211B, DG212B Vishay Siliconix TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) A 250 40 V+ = 22 V Ω) 225 V+ = 5 V 30 V- = - 22 V e ( TA = 25 °C c 200 n On-Resista 115705 7 V nt (pA) 1200 ID (on) urce 125 10 V Curre 0 IS ( off ) , I D(off ) Drain-So 17050 12 V 15 V II- S,D - 10 - - 20 n) 50 o RDS( 25 - 30 0 - 40 0 2 4 6 8 1 0 1 2 1 4 1 6 - 20 - 15 - 10 - 5 0 5 10 15 20 VD - Drain Vo ltage (V) VA NALO G - Analog V oltage ( V) RDS(on) vs. VD and Single Power Supply Voltages Leakage Currents vs. Analog Voltage 1 nA 30 V+ = 15 V V- = - 15 V VS , V D = ± 14 V 20 I I - Current S,D 11000 ppAA IS ( off ) , I D(off ) Q - Charge (pC) - 11000 VV-+ = = - 1155 VV VV-+ = = 0 1 V2 V - 20 1 pA - 30 - 55 - 35 - 15 5 25 45 65 85 105 125 - 15 - 10 - 5 0 5 10 15 Temperature (°C) VANALOG - Analog Voltage (V) Leakage Current vs. Temperature QS, QD - Charge Injection vs. Analog Voltage 120 V+ = + 15 V 11 0 V- = - 15 V 100 90 B) RL = 50 Ω d R ( 80 R OI 70 60 50 40 10K 100K 1M 10M f - Frequency (Hz) Off Isolation vs. Frequency Document Number: 70040 www.vishay.com S11-0179-Rev. J, 07-Feb-11 5

DG211B, DG212B Vishay Siliconix TEST CIRCUITS + 15 V V+ 3 V VS = + 2 V S D VO LInopguict 0 V 50 % ttrf << 2200 nnss IN tOFF 3 V RL CL GND V- 1 kΩ 35 pF 90 % Switch Output VO - 15 V tON RL VO = VS RL + rDS(on) Figure 2. Switching Time + 15 V C + 15 V C V+ VS Rg = 50 Ω S V+ D VO VS Rg = 50 Ω ISN1 1 D1 50 Ω RL 0 V, 2.4 V IN 0V, 2.4 V S2 D2 VO NC GND V- C IN2 RL 0 V, 2.4 V - 15 V GND V- C Off Isolation = 20 log VS C = RF bypass VS VO X TALK Isolation = 20 log VO - 15 V Figure 3. Off Isolation Figure 4. Channel-to-Channel Crosstalk + 15 V ΔVO V+ VO Rg S D VO Vg IN CL INX ON OFF ON 3 V 1000 pF GND V- ΔVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x ΔVO - 15 V Figure 5. Charge Injection www.vishay.com Document Number: 70040 6 S11-0179-Rev. J, 07-Feb-11

DG211B, DG212B Vishay Siliconix APPLICATIONS + 5 V + 15 V VL V+ Logic Input Low = Sample High = Hold 1 kΩ + 15 V + 15 V DG211 B - 15 V - J202 LM101A 2N4400 VI N + 5 MΩ 50 pF 200 W VO UT 5.1 MΩ 1000 pF J507 V- J500 30 pF - 15 V Aquisition T ime = 2 5 µs - 15 V Aperature T ime = 1 µs Sample to Hold Off set = 5 m V Droop R ate = 5 mV/s Figure 6. Sample-and-Hold + 15 V 160 V1 C4 fC 4 150 pF 120 Select C3 fC 3 1500 pF B 80 Select d TTL C2 n - Control ai SefC le2c t 0.015 µF ge G 40 fC 1 fC 2 fC 3 fC 4 C1 V olta fC 1 0.15 µF Select 0 fL 1 fL 2 fL 3 fL 4 DG211 B V- GND - 40 1 10 100 1K 10K 100K 1M - 15 V Frequency - Hz R3 = 1 MΩ + 15 V R3 R1 = 10 kΩ L-M101A - 15 V VO UT ALf C(V (oBlrtaegaek FGraeiqnu Beenlcoyw) =Bre2aπk R1F3 re CqX u ency) = R1 = 100 (40 dB) 1 + fL (Unity Gain Frequency) = 2πR1CX R2 = 10 kΩ 30 pF Max. Attenuation =RDS(on) ≈ - 47 dB 10 kΩ Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency Document Number: 70040 www.vishay.com S11-0179-Rev. J, 07-Feb-11 7

DG211B, DG212B Vishay Siliconix APPLICATIONS + 5 V + 15 V 30 pF + 15 V VI N1 VL V+ + LM101A VI N2 - + 15 V DG419 RF 1 RF 2 RF 3 18 kΩ 9.9 kΩ 100 kΩ - 15 V DG212B CH GND V- - 15 V RG 1 RG 2 RG 3 Gain 1 (x1) 2 kΩ 100 Ω 100 Ω RF + R G Gain = RG Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- GND Logic High = Switch On - 15 V Figure 8. A Precision Amplifier with Digitally Programable Input and Gains Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70040. www.vishay.com Document Number: 70040 8 S11-0179-Rev. J, 07-Feb-11

Package Information Vishay Siliconix (cid:1)(cid:2)(cid:3)(cid:4)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:9)(cid:2)(cid:10)(cid:11)(cid:12)(cid:5)(cid:5)(cid:5)(cid:13)(cid:14)(cid:15)(cid:16)(cid:17)(cid:8)(cid:18) JEDEC Part Number: MS-012 (cid:19)(cid:3)(cid:16)(cid:16)(cid:3)(cid:19)(cid:17)(cid:20)(cid:17)(cid:9)(cid:1) (cid:3)(cid:7)(cid:4)(cid:21)(cid:17)(cid:1) Dim Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.38 0.51 0.015 0.020 C 0.18 0.23 0.007 0.009 D 9.80 10.00 0.385 0.393 E 3.80 4.00 0.149 0.157 16 15 14 13 12 11 10 9 e 1.27 BSC 0.050 BSC E H 5.80 6.20 0.228 0.244 L 0.50 0.93 0.020 0.037 1 2 3 4 5 6 7 8 (cid:1) 0(cid:1) 8(cid:1) 0(cid:1) 8(cid:1) ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 D H C All Leads 0.101 mm A1 (cid:1) e B L 0.004 IN Document Number: 71194 www.vishay.com 02-Jul-01 1

Package Information Vishay Siliconix (cid:1)(cid:2)(cid:3)(cid:1)(cid:4)(cid:5)(cid:5)(cid:6)(cid:7)(cid:8)(cid:9)(cid:10)(cid:11)(cid:2)(cid:5) 16 15 14 13 12 11 10 9 E1 E 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° C MAX B1 e1 B eA (cid:12)(cid:3)(cid:9)(cid:9)(cid:3)(cid:12)(cid:10)(cid:13)(cid:10)(cid:14)(cid:15) (cid:3)(cid:16)(cid:17)(cid:18)(cid:10)(cid:15) Dim Min Max Min Max A 3.81 5.08 0.150 0.200 A1 0.38 1.27 0.015 0.050 B 0.38 0.51 0.015 0.020 B1 0.89 1.65 0.035 0.065 C 0.20 0.30 0.008 0.012 D 18.93 21.33 0.745 0.840 E 7.62 8.26 0.300 0.325 E1 5.59 7.11 0.220 0.280 e1 2.29 2.79 0.090 0.110 eA 7.37 7.87 0.290 0.310 L 2.79 3.81 0.110 0.150 Q1 1.27 2.03 0.050 0.080 S 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 www.vishay.com 06-Jul-01 1

Package Information Vishay Siliconix TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A - 1.10 1.20 A1 0.05 0.10 0.15 A2 - 1.00 1.05 B 0.22 0.28 0.38 C - 0.127 - D 4.90 5.00 5.10 E 6.10 6.40 6.70 E1 4.30 4.40 4.50 e - 0.65 - L 0.50 0.60 0.70 L1 0.90 1.00 1.10 y - - 0.10 θ1 0° 3° 6° ECN: S-61920-Rev. D, 23-Oct-06 DWG: 5624 Document Number: 74417 www.vishay.com 23-Oct-06 1

PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR TSSOP-16 0.193 (4.90) 0.055 (1.40) 0.281 (7.15) 0.171 (4.35) 0.014 0.026 0.012 (0.35) (0.65) (0.30) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 63550 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.047 (1.194) 6 8) 2 1) 4 4 5 6 2 2 1 8 0. 6. 0. 3. ( ( 0.022 0.050 0.028 (0.559) (1.270) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index E T O N N O I T A C I L P P A www.vishay.com Document Number: 72608 24 Revision: 21-Jan-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: DG211BDY-E3 DG212BDY-E3 DG212BDY DG212BDJ DG211BDJ DG211BDY DG212BDQ-T1 DG211BDQ-T1 DG211BDY-T1 DG212BDY-T1 DG211BDJ-E3 DG212BDJ-E3 DG211BDQ-T1-E3 DG211BDY-T1-E3 DG212BDQ- T1-E3 DG212BDY-T1-E3 DG212BDQ-E3