DDTD U (LO-R1) NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction A • Complementary PNP Types Available (DDTB) SOT-323 • Built-In Biasing Resistors Dim Min Max • Lead Free/RoHS Compliant (Note 2) A 0.25 0.40 • "Green" Device, Note 3 and 4 B C B 1.15 1.35 Mechanical Data C 2.00 2.20 • Case: SOT-323 D 0.65 Nominal G • Case Material: Molded Plastic, "Green" Molding E 0.30 0.40 Compound, Note 4. UL Flammability Classification H G 1.20 1.40 Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C K M H 1.80 2.20 • Terminals: Solderable per MIL-STD-202, Method 208 J 0.0 0.10 • Terminal Connections: See Diagram K 0.90 1.00 • Lead Free Plating (Matte Tin Finish annealed over Alloy J D E L L 0.25 0.40 42 leadframe). M 0.10 0.18 • Marking Information: See Table Below & Page 3 • Ordering Information: See Page 3 α 0° 8 ° • Weight: 0.006 grams (approximate) OUT All Dimensions in mm 3 P/N R1 (NOM) R2 (NOM) MARKING C DDTD122LU 0.22KΩ 10KΩ N75 B R1 DDTD142JU 0.47KΩ 10KΩ N76 DDTD122TU 0.22KΩ OPEN N77 R2 DDTD142TU 0.47KΩ OPEN N78 E 1 2 IN GND(0) Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage, (3) to (2) VCC 50 V Input Voltage, (1) to (2) DDTD122LU -5 to +6 DDTD142JU VIN -5 to +6 V Input Voltage, (2) to (1) DDTD122TU DDTD142TU VEBO (MAX) 5 V Output Current All IC 500 mA Power Dissipation (Note 1) Pd 200 mW Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30398 Rev. 6 - 2 1 of 3 DDTD (LO-R1) U © Diodes Incorporated www.diodes.com

Electrical Characteristics R1, R2 Types @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DDTD122LU 0.3 Input Voltage DDTD142JU Vl(off) 0.3 ⎯ ⎯ V VCC = 5V, IO = 100μA DDDDTTDD112422LJUU Vl(on) ⎯ ⎯ 22..00 V VVOO == 00..33VV,, IIOO == 2200mmAA Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 50mA/2.5mA DDTD122LU 28 Input Current DDTD142JU Il ⎯ ⎯ 13 mA VI = 5V Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DDTD122LU 56 DC Current Gain DDTD142JU Gl 56 ⎯ ⎯ ⎯ VO = 5V, IO = 50mA Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics R1-Only, R2-Only Types @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ⎯ ⎯ V IC = 50μA Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ ⎯ V IC = 1mA E m i t t e r - B a s e B r e a k d o w n V o lt a g e DDDDTTDD112422TTUU BVEBO 5 ⎯ ⎯ V IIEE == 5500μμAA Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V DDTD122TU ⎯ 0.5 Emitter Cutoff Current DDTD142TU IEBO ⎯ ⎯ 0.5 μA VEB = 4V Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ 0.3 V IC = 50mA, IB = 2.5mA DDTD122TU 100 250 600 DC Current Transfer Ratio DDTD142TU hFE 100 250 600 ⎯ IC = 5mA, VCE = 5V Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only DS30398 Rev. 6 - 2 2 of 3 DDTD (LO-R1) U © Diodes Incorporated www.diodes.com

250 W) 200 m N ( O TI A 150 P SI S DI R 100 E W O P , d P 50 0 -50 0 50 100 150 T , AMBIENT TEMPERATURE (°C) A Fig. 1 Power Derating Curve Ordering Information (Note 4 & 5) Device Packaging Shipping DDTD122LU-7-F SOT-323 3000/Tape & Reel DDTD142JU-7-F SOT-323 3000/Tape & Reel DDTD122TU-7-F SOT-323 3000/Tape & Reel DDTD142TU-7-F SOT-323 3000/Tape & Reel Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information NXX = Product Type Marking Code See Page 1 Table M YM = Date Code Marking NXX Y Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30398 Rev. 6 - 2 3 of 3 DDTD (LO-R1) U © Diodes Incorporated www.diodes.com

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