ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单,预偏置 > DDTC142JE-7-F
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DDTC142JE-7-F产品简介:
ICGOO电子元器件商城为您提供DDTC142JE-7-F由Diodes Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 DDTC142JE-7-F价格参考。Diodes Inc.DDTC142JE-7-F封装/规格:晶体管 - 双极 (BJT) - 单,预偏置, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200MHz 150mW Surface Mount SOT-523。您可以下载DDTC142JE-7-F参考资料、Datasheet数据手册功能说明书,资料中有DDTC142JE-7-F 详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
产品目录 | |
描述 | TRANS PREBIAS NPN 150MW SOT523 |
产品分类 | 晶体管(BJT) - 单路﹐预偏压式 |
品牌 | Diodes Incorporated |
数据手册 | |
产品图片 | |
产品型号 | DDTC142JE-7-F |
PCN设计/规格 | |
rohs | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
RoHS指令信息 | http://diodes.com/download/4349 |
产品系列 | - |
不同 Ib、Ic时的 Vce饱和值(最大值) | 300mV @ 250µA, 5mA |
不同 Ic、Vce 时的DC电流增益(hFE)(最小值) | 56 @ 10mA,5V |
产品目录绘图 | |
产品目录页面 | |
供应商器件封装 | SOT-523 |
其它名称 | DDTC142JE-FDICT |
功率-最大值 | 150mW |
包装 | 剪切带 (CT) |
安装类型 | 表面贴装 |
封装/外壳 | SOT-523 |
晶体管类型 | NPN - 预偏压 |
标准包装 | 1 |
电压-集射极击穿(最大值) | 50V |
电流-集电极(Ic)(最大值) | 100mA |
电流-集电极截止(最大值) | 500nA |
电阻器-发射极基底(R2)(Ω) | 10k |
电阻器-基底(R1)(Ω) | 470 |
频率-跃迁 | 200MHz |
DDTC E (LO-R1) NPN PRE-BIASED 100 mA SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction A SOT-523 • Complementary PNP Types Available (DDTA) Dim Min Max Typ • Built-In Biasing Resistors A 0.15 0.30 0.22 • Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 • "Green" Device (Note 3 and 4) C 1.45 1.75 1.60 D ⎯ ⎯ 0.50 Mechanical Data G G 0.90 1.10 1.00 H H 1.50 1.70 1.60 • Case: SOT-523 J 0.00 0.10 0.05 • Case Material: Molded Plastic. UL Flammability K Classification Rating 94V-0 N M K 0.60 0.80 0.75 • Moisture Sensitivity: Level 1 per J-STD-020C L 0.10 0.30 0.22 • Terminals: Finish - Solderable per MIL-STD-202, J M 0.10 0.20 0.12 D L Method 208 N 0.45 0.65 0.50 • Lead Free Plating (Matte Tin Finish annealed over Alloy α 0° 8 ° ⎯ 42 leadframe) All Dimensions in mm • Terminal Connections: See Diagram OUT • Marking Information: See Table Below & Page 3 • Ordering Information: See Page 3 3 • Weight: 0.002 grams (approximate) C B R1 P/N R1 (NOM) R2 (NOM) MARKING R2 DDTC122LE 0.22KΩ 10KΩ N81 DDTC142JE 0.47KΩ 10KΩ N82 E DDTC122TE 0.22KΩ OPEN N83 1 2 DDTC142TE 0.47KΩ OPEN N84 IN GND(0) Schematic and Pin Diagram Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Supply Voltage, (3) to (2) VCC 50 V Input Voltage, (1) to (2) DDTC122LE -5 to +6 DDTC142JE VIN -5 to +6 V Input Voltage, (2) to (1) DDTC122TE DDTC142TE VEBO (MAX) 5 V Output Current All IC 100 mA Power Dissipation (Note 1) Pd 150 mW Thermal Resistance, Junction to Ambient Air (Note 1) RθJA 625 °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Note: 1. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30404 Rev. 6 - 2 1 of 3 DDTC (LO-R1) E © Diodes Incorporated www.diodes.com
Electrical Characteristics R1, R2 Types @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition DDTC122LE 0.3 DDTC142JE Vl(off) 0.3 ⎯ ⎯ V VCC = 5V, IO = 100μA Input Voltage DDDDTTCC112422LJEE Vl(on) ⎯ ⎯ 22..00 V VVOO == 00..33VV,, IIOO == 2200mmAA Output Voltage VO(on) ⎯ ⎯ 0.3V V IO/Il = 5mA/0.25mA DDTC122LE 28 Input Current DDTC142JE Il ⎯ ⎯ 13 mA VI = 5V Output Current IO(off) ⎯ ⎯ 0.5 μA VCC = 50V, VI = 0V DDTC122LE 56 DC Current Gain DDTC142JE Gl 56 ⎯ ⎯ ⎯ VO = 5V, IO = 10mA Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz * Transistor - For Reference Only Electrical Characteristics R1-Only Types @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO 50 ⎯ ⎯ V IC = 50μA Collector-Emitter Breakdown Voltage BVCEO 40 ⎯ ⎯ V IC = 1mA E m i t t e r - B a s e B r e a k d o w n V o lt a g e DDDDTTCC112422TTEE BVEBO 5 ⎯ ⎯ V IIEE == 5500μμAA Collector Cutoff Current ICBO ⎯ ⎯ 0.5 μA VCB = 50V DDTC122TE ⎯ 0.5 Emitter Cutoff Current DDTC142TE IEBO ⎯ ⎯ 0.5 μA VEB = 4V Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ 0.3 V IC = 5mA, IB = 0.25mA DDTC122TE 100 250 600 DC Current Transfer Ratio DDTC142TE hFE 100 250 600 ⎯ IC = 1mA, VCE = 5V Gain-Bandwidth Product* fT ⎯ 200 ⎯ MHz VCE = 10V, IE = -5mA, f = 100MHz * Transistor - For Reference Only 250 W) 200 m N ( O ATI 150 P SI S DI R 100 E W O P , d P 50 0 -50 0 50 100 150 T , AMBIENT TEMPERATURE (°C) A Fig. 1 Power Derating Curve DS30404 Rev. 6 - 2 2 of 3 DDTC (LO-R1) E © Diodes Incorporated www.diodes.com
Ordering Information (Note 5) Device Packaging Shipping DDTC122LE-7-F SOT-523 3000/Tape & Reel DDTC142JE-7-F SOT-523 3000/Tape & Reel DDTC122TE-7-F SOT-523 3000/Tape & Reel DDTC142TE-7-F SOT-523 3000/Tape & Reel Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Nxx = Product Type Marking Code (See Page 1) NXXYM YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September Date Code Key Year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code N P R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30404 Rev. 6 - 2 3 of 3 DDTC (LO-R1) E © Diodes Incorporated www.diodes.com
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