DB2S309 Silicon epitaxial planar type For high speed switching circuits Unit: mm DB2J309 in SSMini2 type package  Features  Small reverse current I R  Short reverse recovery time t rr  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol:C5  Packaging DB2S30900L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)  Absolute Maximum Ratings T = 25°C a Parameter Symbol Rating Unit 1: Cathode Reverse voltage VR 30 V 2: Anode Repetitive peak reverse voltage V 30 V RRM Panasonic SSMini2-F5-B Forward current (Average) I 100 mA JEITA SC-79 F(AV) Code SOD-523 Peak forward current I 200 mA FM Non-repetitive peak forward surge current *1 I 1 A FSM Junction temperature T 125 °C j Operating ambient temperature T –40 to +85 °C opr Storage temperature T –55 to +125 °C stg Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)  Electrical Characteristics T = 25°C±3°C a Parameter Symbol Conditions Min Typ Max Unit V I = 10 mA 0.44 F1 F Forward voltage V V I = 100 mA 0.58 F2 F I V = 10 V 0.3 R1 R Reverse current µA I V = 30 V 2.0 R2 R Terminal capacitance C V = 10 V, f = 1 MHz 3.0 pF t R Reverse recovery time *1 t I = I = 100 mA, I = 10 mA , R = 100 Ω 1.3 ns rr F R rr L Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz *1: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse Output Pulse t t r p t 10% t I rr F t A 90% V R I = 10 mA rr tp = 2 µs IF = 100 mA Pulse Generator Wave Form Analyzer tr = 0.35 ns IR = 100 mA (PG-10N) (SAS-8130) δ = 0.05 RL = 100 Ω Rs = 50 Ω Ri = 50 Ω Publication date: April 2013 Ver. CED 1

DB2S309 DB2S309_ I -V DB2S309_ I -V DB2S309_Ct-VR F F R R I  V I  V C V F F R R t R 1 10−3 20 Pulse test 100°C Ta = 25°C 10−4 Ta = 125°C 10−1 F) Forward current I (A)F111000−−−432 Ta = 125°C 2855°C°1C00°C Reverse current I (A)R1111100000−−−−−98765 −42085°5°CC°C Terminal capacitance C (pt 11550 −40°C 10−10 10−5 10−11 0 0 0.2 0.4 0.6 0 10 20 30 40 0 10 20 30 Forward voltage VF (V) Reverse voltage VR (V) Reverse voltage VR (V) Ver. CED 2

DB2S309 SSMini2-F5-B Unit: mm  Land Pattern (Reference) (Unit: mm) Ver. CED 3

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