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DB102S产品简介:
ICGOO电子元器件商城为您提供DB102S由Rectron设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供DB102S价格参考¥询价-¥询价以及RectronDB102S封装/规格参数等产品信息。 你可以下载DB102S参考资料、Datasheet数据手册功能说明书, 资料中有DB102S详细功能的应用电路图电压和使用方法及教程。
参数 | 数值 |
品牌 | Rectron |
产品目录 | 半导体 |
描述 | 桥式整流器 1A 100V |
产品分类 | 分离式半导体 |
产品手册 | |
产品图片 | |
rohs | RoHS 合规性豁免 |
产品系列 | 二极管与整流器,桥式整流器,Rectron DB102S |
产品型号 | DB102S |
产品 | Single Phase Bridge |
产品种类 | 桥式整流器 |
商标 | Rectron |
安装风格 | SMD/SMT |
宽度 | 6.5 mm |
封装/箱体 | DBS |
峰值反向电压 | 100 V |
工厂包装数量 | 2500 |
最大RMS反向电压 | 70 V |
最大反向漏泄电流 | 5 uA |
最大工作温度 | + 150 C |
最大浪涌电流 | 40 A |
最小工作温度 | - 55 C |
正向电压下降 | 1.1 V |
正向连续电流 | 1 A |
长度 | 8.8 mm |
高度 | 3.4 mm |
DB101S RECTRON SEMICONDUCTOR THRU TECHNICAL SPECIFICATION DB1012S SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1200 Volts CURRENT 1.0 Ampere FEATURES *Surge overload rating - 40 amperes peak * Ideal for printed circuit board * Reliable low cost construction utilizing molded * Glass passivated device *Polarity symbols molded on body DB-S *Mounting position: Any * Weight: 1.0 gram MECHANICAL DATA .310 (7.9) .290 (7.4) * Epoxy : Device has UL flammability classification 94V-0 .255 (6.5) * UL listed the recognized component directory, file #E94233 .245 (6.2) .009 .013 (.330) (0.229) .003 (.076) .042 (1.1) .410 (10.4) .038 (1.0) .360 (9.4) .060 (1.524) .040 (1.016) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .346 (8.8) .307 (7.8) Ratings at 25 oC ambient temperature unless otherwise specified. .135 (3.4) Single phase, half wave, 60 Hz, resistive or inductive load. .115 (2.9) For capacitive load, derate current by 20%. .205 (5.2) .195 (5.0) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S DB1012S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 1200 Volts Maximum RMS Bridge Input Voltage VRMS 35 70 140 280 420 560 700 840 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 1200 Volts Maximum Average Forward Output Current at TA = 40oC IO 1.0 Amps Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 40 Amps Typical Thermal Resistance RθJA 40 0C/W (Note 1) RθJC 9 Operating and Storage Temperature Range TJ,TSTG -55 to + 150 0C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL DB101S DB102S DB103S DB104S DB105S DB106S DB107S DB1012S UNITS Maximum Forward Voltage Drop per Bridge VF 1.1 Volts Element at 1.0A DC Maximum Reverse Current at rated @TA = 25oC 5.0 uAmps DC Blocking Voltage per element @TA = 125oC IR 0.5 mAmps NOTE: 1.Suffix “-s” Surface Mount for Dip Bridge. 2005-2 2.Units mounted on P.C.B.with 0.5x0.5” (13x13mm) copper pads. REV:A 3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
RATING AND CHARACTERISTIC CURVES ( DB101S THRU DB1012S ) FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD FIG. 2 - TYPICAL FORWARD CURRENT SURGE CURRENT DERATING CURVE 60 1.0 A) T, ( A) EN 50 T, ( R 8.3ms Single Half Sine-Wave N UR (JEDED Method) RE C 40 R E U G C R D U R S 30 A .5 D W R R A O W F R 20 E O G Single Phase Half Wave F A K R 60Hz Inductive or A E Resistive Load PE 10 AV 0 0 0 2 4 6 10 20 40 60 100 20 40 60 80 100 120 140 160 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE, ( ) FIG. 3 - TYPICAL INSTANTANEOUS FORWARD FIG. 4 - TYPICAL REVERSE CHARACTERISTICS A) 10 CHARACTERISTICS uA) 10 T, ( T, ( N N E E R Pulse Width = 300us R R 1% Duty Cycle R U U C C D E R1.0 S 1.0 A R W E OR REV OUS F TJ = 25 OUS TJ = 25 INSTANTANE0.1 INSTANTANE 0.1 .01 .01 .4 .6 .8 1.0 1.2 1.4 0 20 40 60 80 100 120 140 INSTANTANEOUS FORWARD VOLTAGE, (V) PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) RECTRON
Mounting Pad Layout 0.404 MAX. (10.26 MAX.) 0.205 (5.2) 0.195 (5.0) 0.047 MIN. (1.20 MIN.) 0.060 MIN. (1.52 MIN.) Dimensions in inches and (millimeters) RECTRON
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