CSD75205W1015 www.ti.com SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 P-Channel NexFET™ Power MOSFET FEATURES 1 PRODUCTSUMMARY • DualP-ChMOSFETs VDS DraintoSourceVoltage –20 V • CommonSourceConfiguration Qg GateChargeTotal(-4.5V) 1.6 nC • SmallFootprint1mm×1.5mm Qgd GateChargeGatetoDrain 0.4 nC • Gate-SourceVoltageClamp VGS=–1.8V 145 mΩ • GateESDProtection–3kV RDS(on) DraintoSourceOnResistance VGS=–2.5V 115 mΩ • PbFree VGS=–4.5V 95 mΩ • RoHSCompliant VGS=-1.8V 245 mΩ RD1D2(on) DraintoDrainOnResistance VGS=-2.5V 180 mΩ • HalogenFree VGS=-4.5V 140 mΩ APPLICATIONS VGS(th) ThresholdVoltage –0.65 V • BatteryManagement ORDERINGINFORMATION • LoadSwitch Device Package Media Qty Ship • BatteryProtection CSD75205W1015 1-mm×1.5-mm 7-Inch 3000 Tapeand WaferLevelPackage Reel Reel DESCRIPTION ABSOLUTEMAXIMUMRATINGS The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline TA=25°Cunlessotherwisestated VALUE UNIT possible with excellent thermal characteristics in an VDS DraintoSourceVoltage –20 V ultra low profile. Low on resistance coupled with the VGS GatetoSourceVoltage -6 V small footprint and low profile make the device ideal ContinuousDraintoSourceCurrent, forbatteryoperatedspaceconstrainedapplications. IDS TC=25°C(1) –1.2 A PulsedDraintoSourceCurrent, Figure1. TopView TC=25°C(2) -9.6 A ContinuousSourcePinCurrent -2.3 A IS PulsedSourcePinCurrent(2) -30 A ContinuousGateClampCurrent -0.5 A IG PulsedGateClampCurrent(2) -7 A PD PowerDissipation(1) 0.75 W TJ, OperatingJunctionandStorage –55to150 °C TSTG TemperatureRange (1) Perdevice,bothsidesinconduction P0099-01 (2) Pulseduration10μs,dutycycle≤2% R vsV R vsV DS(on) GS D1D2(on) GS 500 W 500 Wm 450 ID = -1A −m 450 ID1D2= -1A R − On-State Resistance − DS(on) 11223345050505000000000 TJ = 25°C TJ = 125°C R−On-State ResistanceD1D2(on) 11223345050505000000000 TJ= 25°C TJ= 125°C 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 -VGS − Gate to Source Voltage − V G006 -VGS−Gate to Source Voltage−V G013 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2009–2010,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CSD75205W1015 SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ELECTRICAL CHARACTERISTICS T =25°Cunlessotherwisestated A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =–250μA –20 V DSS GS DS BV GatetoSourceVoltage V =0V,I =-250μA -6.1 -7.2 V GSS DS G I DraintoSourceLeakageCurrent V =0V,V =–16V –1 μA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =-6V –100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =–250μA –0.45 –0.65 –0.85 V GS(th) DS GS DS V =–1.8V,I =–1A 145 180 mΩ GS D R DraintoSourceOnResistance V =–2.5V,I =–1A 115 145 mΩ DS(on) GS D V =–4.5V,I =–1A 95 120 mΩ GS D V =-1.8V,I =–1A 245 305 mΩ GS D1D2 R SourcetoDrainOnResistance V =-2.5V,I =–1A 180 225 mΩ D1D2(on) GS D1D2 V =-4.5V,I =–1A 140 175 mΩ GS D1D2 g Transconductance V =–10V,I =–1A 5 S fs DS D DynamicCharacteristics C InputCapacitance 205 265 pF ISS V =0V,V =–10V, C OutputCapacitance GS DS 80 105 pF OSS f=1MHz C ReverseTransferCapacitance 25 33 pF RSS Q GateChargeTotal(–4.5V) 1.6 2.2 nC g Qgd GateCharge-GatetoDrain VDS=–10V, 0.4 nC Qgs GateCharge-GatetoSource IDS=–1A 0.3 nC Q GateChargeatVth 0.12 nC g(th) Q OutputCharge V =–10.25V,V =0V 1.5 nC OSS DS GS t TurnOnDelayTime 6.3 ns d(on) tr RiseTime VDS=–10V,VGS=–4.5V, 5.3 ns td(off) TurnOffDelayTime IDS=–1A,RG=10Ω 32 ns t FallTime 17 ns f DiodeCharacteristics V DiodeForwardVoltage I =–1A,V =0V –0.75 –1 V SD DS GS Q ReverseRecoveryCharge V =–10.25V,I =–1A,di/dt=200A/μs 5.7 nC rr dd F t ReverseRecoveryTime V =–10.25V,I =–1A,di/dt=200A/μs 15.7 ns rr dd F THERMAL CHARACTERISTICS T =25°Cunlessotherwisestated A PARAMETER MIN TYP MAX UNIT ThermalResistanceJunctiontoAmbient(1) (2) 212 °C/W R θJA ThermalResistanceJunctiontoAmbient(2) (3) 119 °C/W (1) DevicemountedonFR4materialwithMinimumCumountingarea (2) Measuredwithbothdevicesbiasedinaparallelcondition. (3) DevicemountedonFR4materialwith1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cu. 2 Copyright©2009–2010,TexasInstrumentsIncorporated

CSD75205W1015 www.ti.com SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 P-Chan 1.0x1.5 CSP TTA MAX Rev1 P-Chan 1.0x1.5 CSP TTA MIN Rev1 MaxR =119°C/W MaxR =212°C/W θJA θJA whenmountedon whenmountedon 1inch2(6.45cm2)of2- minimumpadareaof oz.(0.071-mmthick) 2-oz.(0.071-mmthick) Cu. Cu. M0155-01 M0156-01 TYPICAL MOSFET CHARACTERISTICS GraphsarePerMOSFETatT =25°C,unlessstatedotherwise.DraintoDrainmeasurementsaredonewithbothMOSFETs A inseries(commonsourceconfiguration). 10 e c 1 n a d 0.5 e p 0.3 m al I 0.1 0.1 m er 0.05 Duty Cycle = t1/t2 h T 0.02 d e 0.01 0.01 P z ali m or t1 N t2 – 0.001 qJA Typical RqJA= 169oC/W (min Cu) Z Single Pulse TJ= Px ZqJAx RqJA 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1k t –Pulse Duration–s P G012 Figure2. TransientThermalImpedance Copyright©2009–2010,TexasInstrumentsIncorporated 3

CSD75205W1015 SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) GraphsarePerMOSFETatT =25°C,unlessstatedotherwise.DraintoDrainmeasurementsaredonewithbothMOSFETs A inseries(commonsourceconfiguration). 5.0 5.0 4.5 V = -4.5V 4.5 VDS= 5V GS 4.0 4.0 A A − 3.5 − 3.5 Current 23..50 VVGGSS== --22.V5V Current 23..50 TJ= 125°C n n Drai 2.0 Drai 2.0 -I−D 11..50 VGS= -1.8V VGS= -1.5V -I−D 11..50 TJ= 25°C T = -55°C J 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 0.75 1 1.25 1.5 1.75 2 -V −Drain to Source Voltage−V -V −Gate to Source Voltage−V DS G001 GS G002 Figure3.SaturationCharacteristics Figure4.TransferCharacteristics 6 250 ID= -1A 225 fV = 1M= H0zV V 5 VDS= -10V 200 GS oltage− 4 nce−nF 117550 CISS= CGD+ CGS V a C = C + C Gate 3 apacit 112050 OSS DS GD − 2 C VGS C− 75 CRSS= CGD - 50 1 25 0 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0 5 10 15 20 Qg−Gate Charge−nC -V −Drain to Source Voltage−V G003 DS G004 Figure5.GateCharge Figure6.Capacitance 500 W 500 Wm 450 ID = -1A −m 450 ID1D2= -1A State Resistance − 223340505000000 TJ = 25°C TJ = 125°C n-State Resistance 223340505000000 TJ= 25°C TJ= 125°C n- O O 150 − 150 R − DS(on) 15000 RD1D2(on) 15000 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 -VGS − Gate to Source Voltage − V G006 -VGS−Gate to Source Voltage−V G013 Figure7.On-StateResistancevs.GateVoltage Figure8.On-StateResistancevs.GateVoltage 4 Copyright©2009–2010,TexasInstrumentsIncorporated

CSD75205W1015 www.ti.com SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 TYPICAL MOSFET CHARACTERISTICS (continued) GraphsarePerMOSFETatT =25°C,unlessstatedotherwise.DraintoDrainmeasurementsaredonewithbothMOSFETs A inseries(commonsourceconfiguration). 1.6 10 State Resistance 0111....8024 IVDG1SD2== - 4-.15AV Drain Current−A 0.11 TJ= 125°C TJ= 25°C ed On- 0.6 urce to 0.01 aliz 0.4 So Norm 0.2 -I−SD 0.001 0.0 0.0001 −75 −25 25 75 125 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ−JunctionTemperature−°C G007 -VSD−Source to Drain Voltage−V G008 Figure9.NormalizedOn-StateResistancevs.Temperature Figure10.TypicalDiodeForwardVoltage 100 1.8 1.6 −A 10 −A 1.4 Current 1ms Current 11..02 Drain 1 10ms Drain 0.8 − Area Limited − 0.6 -ID 0.1 by RDS(on) 100ms -ID 0.4 Single Pulse DC 0.2 TypicalRqJA= 169°C/W (min Cu) 0.01 0.0 0.01 1 10 100 −50 −25 0 25 50 75 100 125 150 175 -VDS−Drain Voltage−V G009 TJ−JunctionTemperature−°C G011 Figure11.MaximumSafeOperatingArea Figure12. MaximumDrainCurrentvs.Temperature 1.0 V 0.9 ID= -250mA − e 0.8 g a olt 0.7 V d 0.6 ol h s 0.5 e Thr 0.4 − h) 0.4 GS(t 0.2 V - 0.1 0.0 −75 −25 25 75 125 175 T −JunctionTemperature−°C J G005 Figure13.ThresholdVoltagevs.Temperature Copyright©2009–2010,TexasInstrumentsIncorporated 5

CSD75205W1015 SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 www.ti.com MECHANICAL DATA CSD75205W1015 Package Dimensions Pin 1 Solder Ball Pin 1 Mark Ø 0.31±0.075 Mark 1 2 2 1 A A 0 5 0. 00 01 B +0.–0. B 00 50 1. 1. C C 1.00 +0.00 0.62 Max 0.50 –0.10 Top View Side View Bottom View 8 3 0. x a 4 M 0.0 62 0. Seating Plate Front View M0157-01 NOTE: Alldimensionsareinmm(unlessotherwisespecified) Pinout POSITION DESIGNATION B1,B2 Source C1 Gate1 C2 Drain1 A2 Gate2 A1 Drain2 6 Copyright©2009–2010,TexasInstrumentsIncorporated

CSD75205W1015 www.ti.com SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 Figure14. LandPatternRecommendation Ø 0.25 1 2 A 0 5 0. B 00 1. C 0.50 M0158-01 NOTE: Alldimensionsareinmm(unlessotherwisespecified) Tape and Reel Information 4.00 ±0.10 2.00 ±0.05 Ø 1.50 ±0.10 0.300.10 0.10 2° Max +– ± 0 5 0 7 8. 1. 5 0 3.50 ±0. 5 ±0.05 4.00 ±0.10 Ø0.60 +0.05 6 –0.10 1. 0.86 ±0.05 0.254 ±0.02 2° Max 1.19 ±0.05 M0159-01 NOTE: Alldimensionsareinmm(unlessotherwisespecified) Copyright©2009–2010,TexasInstrumentsIncorporated 7

CSD75205W1015 SLPS222B–OCTOBER2009–REVISEDOCTOBER2010 www.ti.com REVISION HISTORY ChangesfromOriginal(October2009)toRevisionA Page • DeletedthePackageMarkingInformationsection ............................................................................................................... 7 ChangesfromRevisionA(October2009)toRevisionB Page • ChangedtheCSD75205W1015PackageDimensionssection.TopViewFrom:15.00To:1.50 ........................................ 6 8 Copyright©2009–2010,TexasInstrumentsIncorporated

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