Not Recommended for New Designs CSD25401Q3 www.ti.com SLPS211C–AUGUST2009–REVISEDAPRIL2013 P-Channel NexFET™ Power MOSFETs CheckforSamples:CSD25401Q3 FEATURES 1 Table1.PRODUCTSUMMARY • UltraLowQ andQ 2 g gd • LowThermalResistance VDS DraintoSourceVoltage –20 V • LowR Qg GateChargeTotal(4.5V) 8.8 nC DS(on) Qgd GateChargeGatetoDrain 2.1 nC • PbFreeTerminalPlating VGS=–2.5V 13.5 mΩ • RoHSCompliant RDS(on) DraintoSourceOnResistance VGS=–4.5V 8.8 mΩ • HalogenFree Vth ThresholdVoltage –0.85 V • SON3.3mmx3.3mmPlasticPackage ORDERINGINFORMATION APPLICATIONS Device Package Media Qty Ship SON3×3Plastic 13-inch Tapeand • DC-DCConverters CSD25401Q3 2500 Package reel Reel • BatteryManagement • LoadSwitch ABSOLUTEMAXIMUMRATINGS • BatteryProtection TA=25°Cunlessotherwisestated VALUE UNIT VDS DraintoSourceVoltage –20 V DESCRIPTION VGS GatetoSourceVoltage +12/-12 V The NexFET™ power MOSFET has been designed ContinuousDrainCurrent,TC=25°C –60 A to minimize losses in power conversion load ID ContinuousDrainCurrent(1) –14 A management applications. The SON 3×3 package IDM PulsedDrainCurrent,TA=25°C(2) –82 A offers excellent thermal performance for the size of PD PowerDissipation(1) 2.8 W thepackage. TJ, OperatingJunctionandStorage –55to150 °C TSTG TemperatureRange Figure1. TopView (1) R =45°C/Won1inch2Cu(2oz.)on0.060"thickFR4PCB. θJA (2) Pulsewidth≤300µs,dutycycle≤2% D 1 8 S D 2 7 S D 3 6 S 4 S 5 G S R vsV GateCharge DS(ON) GS 30 10 Wm ID=−10A 9 ID=−10A On-State Resistance− 11220505 TC= 125°C −Gate Voltage−VG 345678 VDS=−10V − V S(on) 5 TC= 25°C − 2 D 1 R 0 0 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 −VGS−Gate to Source Voltage−V G006 Qg−Gate Charge−nC G003 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. NexFETisatrademarkofTexasInstruments. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2009–2013,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

Not Recommended for New Designs CSD25401Q3 SLPS211C–AUGUST2009–REVISEDAPRIL2013 www.ti.com ELECTRICAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =–250μA –20 V DSS GS D I DraintoSourceLeakageCurrent V =0V,V =–20Vto–16V –1 μA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =±12V –100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =–250μA –0.6 –0.85 –1.2 V GS(th) DS GS D V =–2.5V,I =–10A 13.5 18.2 mΩ GS D R DraintoSourceOnResistance DS(on) V =–4.5V,I =–10A 8.8 11.7 mΩ GS D g Transconductance V =–15V,I =–10A 43 S fs DS D DynamicCharacteristics C InputCapacitance 1070 1400 pF ISS V =0V,V =–10V, C OutputCapacitance GS DS 560 730 pF OSS f=1MHz C ReverseTransferCapacitance 180 230 pF RSS Q GateChargeTotal(4.5V) 8.8 12.3 nC g Q GateChargeGatetoDrain 2.1 nC gd V =–10V,I =–10A DS D Q GateChargeGatetoSource 2.1 nC gs Q GateChargeatVth 0.9 nC g(th) Q OutputCharge V =–10V,V =0V 8.2 nC OSS DS GS t TurnOnDelayTime 8.1 ns d(on) tr RiseTime VDS=–10V,VGS=–4.5V, 3.9 ns td(off) TurnOffDelayTime ID=–10A,RG=5.1Ω 13.5 ns t FallTime 12.6 ns f DiodeCharacteristics V DiodeForwardVoltage I =–10A,V =0V –0.7 –1 V SD S GS Qrr ReverseRecoveryCharge VDD=–12.5V,IF=–10A, 17.4 nC t ReverseRecoveryTime di/dt=300A/μs 21 ns rr THERMAL INFORMATION CSD25401Q3 THERMALMETRIC(1)(2) UNITS 8PIN θ Junction-to-ambientthermalresistance 42.0 JA θ Junction-to-case(top)thermalresistance 20.6 JCtop θ Junction-to-boardthermalresistance 8.8 JB °C/W ψ Junction-to-topcharacterizationparameter 0.3 JT ψ Junction-to-boardcharacterizationparameter 8.7 JB θ Junction-to-case(bottom)thermalresistance 0.1 JCbot (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheICPackageThermalMetricsapplicationreport,SPRA953. (2) ForthermalestimatesofthisdevicebasedonPCBcopperarea,seetheTIPCBThermalCalculator. 2 SubmitDocumentationFeedback Copyright©2009–2013,TexasInstrumentsIncorporated ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 www.ti.com SLPS211C–AUGUST2009–REVISEDAPRIL2013 GATE DRAIN GATE DRAIN MaxR =158°C/W MaxR =57°C/W θJA θJA whenmountedon whenmountedon minimumpadareaof2 1inch2of2oz.Cu. oz.Cu. SOURCE SOURCE M0137-01 M0137-02 TYPICAL MOSFET CHARACTERISTICS (T =25°Cunlessotherwisestated) A 10 e c n a d e 1 p m mal I 00..53 er h Duty Cycle = t /t T 0.1 0.1 1 2 d e z 0.05 ali P m or 0.02 t1 –N 0.01 0.01 t2 ZqJA RqJA= 126oC/W (min Cu) Single Pulse TJJ= Px ZqJAx RqJA 0.001 0.001 0.01 0.1 1 10 100 1k t –Pulse Duration–s P G012 Figure2. TransientThermalImpedance Copyright©2009–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 SLPS211C–AUGUST2009–REVISEDAPRIL2013 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A 50 50 45 45 V = -5V A 40 VGS=−4.5V A 40 DS urrent− 3305 VGS=−3V VGS=−2V urrent− 3305 n C 25 n C 25 Drai 20 Drai 20 TC= 125°C − 15 VGS=−2.5V − 15 D D −I 10 VGS=−1.5V -I 10 TC= 25°C 5 5 T =−55°C C 0 0 0 0.5 1 1.5 2 2.5 3 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 −VDS−Drain to Source Voltage−V G001 -VGS−Gate to Source Voltage−V G002 Figure3.SaturationCharacteristics Figure4.TransferCharacteristics 10 1400 9 ID=−10A f = 1MHz VDS=−10V 1200 VGS= 0V V 8 − 7 pF 1000 Voltage 6 ance− 800 COSS= CDS+ CGD CISS= CGD+ CGS e 5 cit Gat 4 apa 600 − C G 3 − 400 CRSS= CGD V C − 2 200 1 0 0 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 20 Qg−Gate Charge−nC G003 −VDS−Drain to Source Voltage−V G004 Figure5.GateCharge Figure6.Capacitance 1.4 30 V ID=−250mA Wm ID=−10A − 1.2 − 25 e e g c old Volta 0.18 Resistan 20 TC= 125°C hresh 0.6 State 15 −T On- 10 h) 0.4 − VGS(t 0.2 S(on) 5 TC= 25°C − D R 0 0 −75 −25 25 75 125 175 0 1 2 3 4 5 6 7 8 9 10 T −CaseTemperature−°C −V −Gate to Source Voltage−V C G005 GS G006 Figure7.ThresholdVoltagevs.Temperature Figure8.OnResistancevs.GateVoltage 4 SubmitDocumentationFeedback Copyright©2009–2013,TexasInstrumentsIncorporated ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 www.ti.com SLPS211C–AUGUST2009–REVISEDAPRIL2013 TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A 1.6 100 ance 1.4 IVDG=S−=1−04A.5V nt−A 10 State Resist 01..182 Drain Curre 1 TC= 125°C alized On- 00..46 Source to 0.1 TC= 25°C m − 0.01 Nor 0.2 SD −I 0 0.001 −75 −25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 1.2 TC−CaseTemperature−°C G007 −VSD−Source to Drain Voltage−V G008 Figure9.OnResistancevs.Temperature Figure10.TypicalDiodeForwardVoltage 1k 70 60 100 A A Current− 10 11m00sms Current− 4500 Drain 1 10ms Drain 30 -I−D 0.1 Abyre RaD LSim(oint)ed 100ms −I−D 20 Single Pulse 10 DC RθJA= 126°C/W (min Cu) 0.01 0 0.01 0.1 1 10 100 −50 −25 0 25 50 75 100 125 150 175 -VDS−DrainTo Source Voltage−V G009 TC−CaseTemperature−°C G011 Figure11.MaximumSafeOperatingArea Figure12. MaximumDrainCurrentvs.Temperature Copyright©2009–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 SLPS211C–AUGUST2009–REVISEDAPRIL2013 www.ti.com MECHANICAL DATA CSD25401Q3 Package Dimensions DIM MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX A 0.950 1.000 1.100 0.037 0.039 0.043 A1 0.000 0.000 0.050 0.000 0.000 0.002 b 0.280 0.340 0.400 0.011 0.013 0.016 b1 0.310NOM 0.012NOM c 0.150 0.200 0.250 0.006 0.008 0.010 D 3.200 3.300 3.400 0.126 0.130 0.134 D2 1.650 1.750 1.800 0.065 0.069 0.071 d 0.150 0.200 0.250 0.006 0.008 0.010 d1 0.300 0.350 0.400 0.012 0.014 0.016 E 3.200 3.300 3.400 0.126 0.130 0.134 E2 2.350 2.450 2.550 0.093 0.096 0.100 e 0.650TYP 0.026TYP H 0.35 0.450 0.550 0.014 0.018 0.022 K 0.650TYP 0.026TYP L 0.35 0.450 0.550 0.014 0.018 0.022 L1 0 0 0 0 θ 0 0 0 0 6 SubmitDocumentationFeedback Copyright©2009–2013,TexasInstrumentsIncorporated ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 www.ti.com SLPS211C–AUGUST2009–REVISEDAPRIL2013 Recommended PCB Pattern Recommended Stencil Opening Copyright©2009–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 SLPS211C–AUGUST2009–REVISEDAPRIL2013 www.ti.com Tape and Reel Information 0 1 0. ± 5 4.00 ±0.10 (See Note 1) 2.00 ±0.05 7 1. 8.00 ±0.10 Ø 1.50 +0.10 –0.00 00 31 0.0. +– 0 0 2. 1 5 0 50 ±0. 3.60 5. 0 3 3.60 1. M0144-01 Notes: 1. 10sprocketholepitchcumulativetolerance±0.2 2. Cambernottoexceed1mmIN100mm,noncumulativeover250mm 3. Material:blackstaticdissipativepolystyrene 4. Alldimensionsareinmm(unlessotherwisespecified) 5. Thickness:0.30±0.05mm 6. MSL1260°C(IRandConection)PbFReflowCompatible 8 SubmitDocumentationFeedback Copyright©2009–2013,TexasInstrumentsIncorporated ProductFolderLinks:CSD25401Q3

Not Recommended for New Designs CSD25401Q3 www.ti.com SLPS211C–AUGUST2009–REVISEDAPRIL2013 REVISION HISTORY ChangesfromOriginal(August2009)toRevisionA Page • Changed300sto300µsinNote2oftheAbsMaxRatingstable ........................................................................................ 1 • ChangedQ GateChargeTotal(4.5V)-maxvalueFrom:2.3To:12.3 .............................................................................. 2 g ChangesfromRevisionA(October2009)toRevisionB Page • DeletedthePackageMarkingInformationsection ............................................................................................................... 8 ChangesfromRevisionB(October2010)toRevisionC Page • ReplacedtheTHERMALCHARACTERISTICStablewiththenewThermalInformationTable .......................................... 2 • ChangedtheCSD25401Q3PackageDimensionssection .................................................................................................. 6 • ChangedtheRecommendedPCBPatternsection .............................................................................................................. 7 Copyright©2009–2013,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:CSD25401Q3

PACKAGE MATERIALS INFORMATION www.ti.com 18-Aug-2014 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) CSD25401Q3 VSON- DQG 8 2500 330.0 12.4 3.6 3.6 1.2 8.0 12.0 Q1 CLIP CSD25401Q3 VSON- DQG 8 2500 330.0 12.8 3.6 3.6 1.2 8.0 12.0 Q1 CLIP PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 18-Aug-2014 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) CSD25401Q3 VSON-CLIP DQG 8 2500 336.6 336.6 41.3 CSD25401Q3 VSON-CLIP DQG 8 2500 335.0 335.0 32.0 PackMaterials-Page2

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