Product Sample & Technical Tools & Support & Reference Folder Buy Documents Software Community Design CSD18533KCS SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 CSD18533KCS 60 V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • Ultra-LowQ andQ 1• LowThermaglResistgadnce TA=25°C TYPICALVALUE UNIT VDS Drain-to-sourcevoltage 60 V • AvalancheRated Qg Gatechargetotal(10V) 28 nC • LogicLevel Qgd Gatechargegate-to-drain 3.9 nC • Pb-FreeTerminalPlating VGS=4.5V 6.9 mΩ RDS(on) Drain-to-sourceon-resistance • RoHSCompliant VGS=10V 5.0 mΩ • HalogenFree VGS(th) Thresholdvoltage 1.9 V • TO-220PlasticPackage OrderingInformation(1) 2 Applications DEVICE QTY MEDIA PACKAGE SHIP CSD18533KCS 50 Tube TO-220PlasticPackage Tube • DC-DCConversion (1) For all available packages, see the orderable addendum at • SecondarySideSynchronousRectifier theendofthedatasheet. • MotorControl AbsoluteMaximumRatings 3 Description TA=25°C VALUE UNIT This 5.0 mΩ, 60 V TO-220 NexFET™ power VDS Drain-to-sourcevoltage 60 V MOSFET is designed to minimize losses in power VGS Gate-to-sourcevoltage ±20 V conversionapplications. Continuousdraincurrent(packagelimited) 100 SPACE ID C=o2n5t°inCuousdraincurrent(siliconlimited),TC 118 A Drain (Pin 2) Continuousdraincurrent(siliconlimited),TC 84 =100°C IDM Pulseddraincurrent(1) 294 A PD Powerdissipation 192 W TJ, Operatingjunction, –55to175 °C Gate Tstg Storagetemperature (Pin 1) Avalancheenergy,singlepulse EAS ID=52A,L=0.1mH,RG=25Ω 135 mJ (1) MaxR =0.8°C/W,pulseduration≤100μs,dutycycle≤1% Source (Pin 3) θJC . . R vsV GateCharge DS(on) GS 20 10 :e (m) 1168 TTCC == 2152°5 C° C, I, DI D= = 7 755 A A ge (V) 8 IVDD =S 7=5 3 A0 V c a an 14 olt sist 12 e V 6 e c e R 10 our n-Stat 8 e-to-S 4 O 6 at - S(on) 4 - GGS 2 D V R 2 0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 VGS - Gate-to-Source Voltage (V) D007 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18533KCS SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 www.ti.com Table of Contents 1 Features.................................................................. 1 6 DeviceandDocumentationSupport.................... 7 2 Applications........................................................... 1 6.1 CommunityResources..............................................7 3 Description............................................................. 1 6.2 Trademarks...............................................................7 4 RevisionHistory..................................................... 2 6.3 ElectrostaticDischargeCaution................................7 6.4 Glossary....................................................................7 5 Specifications......................................................... 3 7 Mechanical,Packaging,andOrderable 5.1 ElectricalCharacteristics...........................................3 Information............................................................. 8 5.2 ThermalInformation..................................................3 7.1 KCSPackageDimensions........................................8 5.3 TypicalMOSFETCharacteristics..............................4 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionB(April2014)toRevisionC Page • UpdatedPulsedDrainCurrent .............................................................................................................................................. 1 • Updatedpulsedcurrentconditions ........................................................................................................................................ 1 • UpdatedFigure1 ................................................................................................................................................................... 4 • UpdatedSOAinFigure10 .................................................................................................................................................... 6 • AddedCommunityResources ............................................................................................................................................... 7 ChangesfromRevisionA(January2013)toRevisionB Page • Updateddocumenttitletoincludepartnumber .................................................................................................................... 1 • Updatedpartdescription ....................................................................................................................................................... 1 • Increasedcurrentstoreflectincreaseinmaxtemperature ................................................................................................... 1 • Increasedmaxpowertoreflectincreaseinmaxtemperature .............................................................................................. 1 • Increasedmaxtemperatureto175°C ................................................................................................................................... 1 • UpdatedFigure6toextendto175ºC .................................................................................................................................... 5 • UpdatedFigure8toextendto175ºC .................................................................................................................................... 5 • UpdatedFigure12toextendto175ºC .................................................................................................................................. 6 ChangesfromOriginal(September2012)toRevisionA Page • ChangedQ ,GateChargeatV valueFrom:7.3To:4.6.................................................................................................. 3 g(th) th 2 SubmitDocumentationFeedback Copyright©2012–2015,TexasInstrumentsIncorporated ProductFolderLinks:CSD18533KCS

CSD18533KCS www.ti.com SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 5 Specifications 5.1 Electrical Characteristics (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-sourcevoltage V =0V,I =250μA 60 V DSS GS D I Drain-to-sourceleakagecurrent V =0V,V =48V 1 μA DSS GS DS I Gate-to-sourceleakagecurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-sourcethresholdvoltage V =V ,I =250μA 1.5 1.9 2.3 V GS(th) DS GS D V =4.5V,I =75A 6.9 9.0 mΩ GS D R Drain-to-sourceon-resistance DS(on) V =10V,I =75A 5.0 6.3 mΩ GS D g Transconductance V =30V,I =75A 150 S fs DS D DYNAMICCHARACTERISTICS C Inputcapacitance 2420 3025 pF iss C Outputcapacitance V =0V,V =30V,ƒ=1MHz 300 375 pF oss GS DS C Reversetransfercapacitance 7 9.1 pF rss R Seriesgateresistance 1.4 2.8 Ω G Q Gatechargetotal(4.5V) 14 17 nC g Q Gatechargetotal(10V) 28 34 nC g Q Gatechargegate-to-drain V =30V,I =75A 3.9 nC gd DS D Q Gatechargegate-to-source 9.4 nC gs Q GatechargeatV 4.6 nC g(th) th Q Outputcharge V =30V,V =0V 31 nC oss DS GS t Turnondelaytime 5.7 ns d(on) tr Risetime VDS=30V,VGS=10V, 4.8 ns td(off) Turnoffdelaytime IDS=75A,RG=0Ω 13 ns t Falltime 3.2 ns f DIODECHARACTERISTICS V Diodeforwardvoltage I =75A,V =0V 0.8 1 V SD SD GS Qrr Reverserecoverycharge VDS=30V,IF=75A, 97 nC t Reverserecoverytime di/dt=300A/μs 49 ns rr 5.2 Thermal Information (T =25°Cunlessotherwisestated) A THERMALMETRIC MIN TYP MAX UNIT R Junction-to-casethermalresistance 0.8 °C/W θJC R Junction-to-ambientthermalresistance 62 °C/W θJA Copyright©2012–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD18533KCS

CSD18533KCS SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 www.ti.com 5.3 Typical MOSFET Characteristics (T =25°Cunlessotherwisestated) A Figure1. TransientThermalImpedance 180 200 nt (A) 114600 nt (A) 116800 TTTCCC === 12-52555° °C ° CC e e urr 120 urr 140 C C ource 100 ource 110200 S 80 S o- o- 80 n-t 60 n-t ai ai 60 Dr Dr I - DS 2400 VVGGSS == 46..55 VV I - DS 2400 VGS = 10 V 0 0 0 0.5 1 1.5 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) D002 VGS - Gate-to-Source Voltage (V) D003 V =5V DS Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 4 SubmitDocumentationFeedback Copyright©2012–2015,TexasInstrumentsIncorporated ProductFolderLinks:CSD18533KCS

CSD18533KCS www.ti.com SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 Typical MOSFET Characteristics (continued) (T =25°Cunlessotherwisestated) A 10 5500000000 Ciss = Cgd + Cgs e (V) 8 10000 CCorssss == CCgdds + Cgd g e Volta 6 ce (pF) Sourc acitan 1000 Gate-to- 4 C - Cap 100 - S 2 G V 0 10 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 Qg - Gate Charge (nC) D004 VDS - Drain-to-Source Voltage (V) D005 I =75A V =30V D DS Figure4.GateCharge Figure5.Capacitance 2.5 20 2.3 :) 18 TTCC == 2152°5 C° C, I, DI D= = 7 755 A A oltage (V) 12..91 stance (m 1146 V si 12 hold 1.7 e Re 10 V - ThresGS(th) 111...135 - On-StatS(on) 468 D 0.9 R 2 0.7 0 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (° C) D006 VGS - Gate-to-Source Voltage (V) D007 I =250µA D Figure6.ThresholdVoltagevsTemperature Figure7.On-StateResistancevsGate-to-SourceVoltage 2.4 100 ce 2.2 VVGGSS == 41.05 VV A) 10 TTCC == 2152°5 C° C esistan 1.82 urrent ( 1 R C e 1.6 n at ai St 1.4 Dr 0.1 ormalized On- 01..821 - Source-to-D 0.00.0011 N S 0.6 I 0.4 0.0001 -75 -50 -25 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (° C) D008 VSD - Source-to-Drain Voltage (V) D009 I =75A D Figure8.NormalizedOn-StateResistancevsTemperature Figure9.TypicalDiodeForwardVoltage Copyright©2012–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD18533KCS

CSD18533KCS SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 www.ti.com Typical MOSFET Characteristics (continued) (T =25°Cunlessotherwisestated) A 1000 100 TC = 25q C A) A) TC = 125q C nt ( 100 nt ( e e urr urr C C e e c h o-Sour 10 valanc ain-t ak A Dr 1 Pe I - DS DC 1 ms 10 µs I - AV 10 ms 100 µs 0.1 10 0.1 1 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) D010 TAV - Time in Avalanche (ms) D011 SinglePulse,MaxRθJC=0.8°C/W Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching 120 A) 100 nt ( e urr 80 C e c our 60 S o- n-t 40 ai Dr - S 20 D I 0 -50 -25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (° C) D012 Figure12. MaximumDrainCurrentvsTemperature 6 SubmitDocumentationFeedback Copyright©2012–2015,TexasInstrumentsIncorporated ProductFolderLinks:CSD18533KCS

CSD18533KCS www.ti.com SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 6 Device and Documentation Support 6.1 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 6.2 Trademarks NexFET,E2EaretrademarksofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 6.3 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.4 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. Copyright©2012–2015,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD18533KCS

CSD18533KCS SLPS362C–SEPTEMBER2012–REVISEDJUNE2015 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical packaging and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 KCS Package Dimensions PinConfiguration Position Designation Pin1 Gate Pin2/Tab Drain Pin3 Source 8 SubmitDocumentationFeedback Copyright©2012–2015,TexasInstrumentsIncorporated ProductFolderLinks:CSD18533KCS

PACKAGE OPTION ADDENDUM www.ti.com 5-Jan-2019 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD18533KCS ACTIVE TO-220 KCS 3 50 Pb-Free (RoHS CU SN N / A for Pkg Type -55 to 175 CSD18533KCS Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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