Product Order Technical Tools & Support & Reference Folder Now Documents Software Community Design CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 CSD18531Q5A 60-V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • Ultra-LowQ andQ 1• Low-ThermaglResistgadnce TA=25°C TYPICALVALUE UNIT VDS Drain-to-SourceVoltage 60 V • AvalancheRated Qg GateChargeTotal(10V) 36 nC • LogicLevel Qgd GateChargeGate-to-Drain 5.9 nC • Lead-FreeTerminalPlating VGS=4.5V 4.4 RDS(on) Drain-to-SourceOn-Resistance mΩ • RoHSCompliant VGS=10V 3.5 • HalogenFree VGS(th) ThresholdVoltage 1.8 V • SON5-mm×6-mmPlasticPackage DeviceInformation(1) 2 Applications DEVICE QTY MEDIA PACKAGE SHIP CSD18531Q5A 2500 13-InchReel SON Tape • DC-DCConversion 5.00-mm×6.00-mm and CSD18531Q5AT 250 7-InchReel PlasticPackage Reel • SecondarySideSynchronousRectifier (1) For all available packages, see the orderable addendum at • BatteryMotorControl theendofthedatasheet. 3 Description AbsoluteMaximumRatings This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power TA=25°C VALUE UNIT MOSFET is designed to minimize losses in power VDS Drain-to-SourceVoltage 60 V conversionapplications. VGS Gate-to-SourceVoltage ±20 V ContinuousDrainCurrent(PackageLimited) 100 TopView ContinuousDrainCurrent(SiliconLimited), ID TC=25°C 134 A S 1 8 D ContinuousDrainCurrent(1) 19 IDM PulsedDrainCurrent(2) 400 A S 2 7 D PowerDissipation(1) 3.8 PD W S 3 6 D PowerDissipation,TC=25°C 156 D TJ OperatingJunction –55to175 °C G 4 5 D Tstg StorageTemperature –55to175 °C P0093-01 EAS AIDv=ala6n7cAh,eLE=ne0r.g1ym,SHin,gRlGe=Pu2l5seΩ 224 mJ (1) Typical R = 40°C/W on a 1-in2, 2-oz Cu pad on a θJA 0.06-inthickFR4PCB. (2) MaxR =1°C/W,pulseduration≤100μs,dutycycle≤1%. θJC R vsV GateCharge DS(on) GS 12 10 TC = 25° C, ID = 22 A ID = 22 A :e (m) 10 TC = 125° C, ID = 22 A ge (V) 8 VDS = 30 V anc 8 olta st V si e 6 e c e R 6 our On-Stat 4 ate-to-S 4 - S(on) 2 - GGS 2 D V R 0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 VGS - Gate-to-Source Voltage (V) D007 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 www.ti.com Table of Contents 1 Features.................................................................. 1 6.2 CommunityResources..............................................8 2 Applications........................................................... 1 6.3 Trademarks...............................................................8 3 Description............................................................. 1 6.4 ElectrostaticDischargeCaution................................8 6.5 Glossary....................................................................8 4 RevisionHistory..................................................... 2 7 MechanicalPackaging,andOrderable 5 Specifications......................................................... 4 Information............................................................. 9 5.1 ElectricalCharacteristics...........................................4 7.1 Q5APackageDimensions........................................9 5.2 ThermalInformation..................................................4 7.2 RecommendedPCBPattern...................................10 5.3 TypicalMOSFETCharacteristics..............................5 7.3 RecommendedStencilOpening.............................10 6 DeviceandDocumentationSupport.................... 8 7.4 Q5ATapeandReelInformation.............................11 6.1 ReceivingNotificationofDocumentationUpdates....8 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionF(October2016)toRevisionG Page • Changedtemperaturerangefrom150°C:to175°C.............................................................................................................. 1 • ChangedI using175°Cdatafrom370A:to400A........................................................................................................... 1 DM • ChangedP using175°Cdatafrom3.1W:to3.8W............................................................................................................ 1 D • ChangedFigure6toextendto175°C.................................................................................................................................... 5 • ChangedFigure8toextendto175°C.................................................................................................................................... 6 • ChangedFigure10using175°Cdata.................................................................................................................................... 6 • ChangedFigure12toextendto175°C.................................................................................................................................. 6 ChangesfromRevisionE(August2015)toRevisionF Page • Changedthe125°CR vsV curvetoreflecttypicalpartcharacterization................................................................... 1 DS(on) GS • Changedthe125°CcurveinFigure7toreflecttypicalpartcharacterization........................................................................ 5 • AddedReceivingNotificationofDocumentationUpdatessectiontotheDeviceandDocumentationSupportsection.........8 ChangesfromRevisionD(May2015)toRevisionE Page • Correcteddevicesizeindescriptionfrommtomm............................................................................................................... 1 • CorrectedpackagetypetoSON. .......................................................................................................................................... 1 ChangesfromRevisionC(March2015)toRevisionD Page • AddedCommunityResources. .............................................................................................................................................. 8 ChangesfromRevisionB(October2012)toRevisionC Page • Addedpartnumbertotitle. .................................................................................................................................................... 1 • ChangedQ valueto36nC,measuredat10V. ................................................................................................................... 1 g • Added7"reeltoOrderingInformation. .................................................................................................................................. 1 • Increasemaxpulsedcurrentto370A. ................................................................................................................................. 1 • Addedlineformaxpowerdissipationwiththecasetemperatureheldto25°C..................................................................... 1 • Updatedpulsedcurrentconditions. ....................................................................................................................................... 1 • UpdatedFigure1toshowZ curves................................................................................................................................... 5 θJC 2 SubmitDocumentationFeedback Copyright©2012–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD18531Q5A

CSD18531Q5A www.ti.com SLPS321G–JUNE2012–REVISEDAUGUST2017 • UpdatedFigure10.................................................................................................................................................................. 6 • UpdatedFigure12. ................................................................................................................................................................ 6 ChangesfromRevisionA(June2012)toRevisionB Page • ChangedtheTransconductanceTYPvalueFrom:177STo:128S..................................................................................... 4 • ChangedtheTurnOnandTurnOffDelayTime,RiseandFallTimeTest.ConditionsFrom:I =22A,R =2ΩTo: DS G I =22A,R =0Ω. ............................................................................................................................................................. 4 DS G • ChangedtheQ ReverseRecoveryChargeTYPvalueFrom:68nCTo:100nC. .............................................................. 4 rr ChangesfromOriginal(June2012)toRevisionA Page • AddedT =25°CtotheProductSummarytable................................................................................................................... 1 A Copyright©2012–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD18531Q5A

CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 www.ti.com 5 Specifications 5.1 Electrical Characteristics T =25°C(unlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-sourcevoltage V =0V,I =250μA 60 V DSS GS D I Drain-to-sourceleakagecurrent V =0V,V =48V 1 μA DSS GS DS I Gate-to-sourceleakagecurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-sourcethresholdvoltage V =V ,I =250μA 1.5 1.8 2.3 V GS(th) DS GS D V =4.5V,I =22A 4.4 5.8 GS D R Drain-to-sourceon-resistance mΩ DS(on) V =10V,I =22A 3.5 4.6 GS D g Transconductance V =30V,I =22A 128 S fs DS D DYNAMICCHARACTERISTICS C Inputcapacitance 3200 3840 pF iss C Outputcapacitance V =0V,V =30V,ƒ=1MHz 380 456 pF oss GS DS C Reversetransfercapacitance 11 14 pF rss R Seriesgateresistance 1.2 2.4 Ω G Q Gatechargetotal(4.5V) 18 22 nC g Q Gatechargetotal(10V) 36 43 nC g Q Gatechargegate-to-drain V =30V,I =22A 5.9 nC gd DS D Q Gatechargegate-to-source 6.9 nC gs Q GatechargeatV 5.2 nC g(th) th Q Outputcharge V =30V,V =0V 32 nC oss DS GS t Turnondelaytime 4.4 ns d(on) tr Risetime VDS=30V,VGS=10V, 7.8 ns td(off) Turnoffdelaytime IDS=22A,RG=0Ω 20 ns t Falltime 2.7 ns f DIODECHARACTERISTICS V Diodeforwardvoltage I =22A,V =0V 0.8 1 V SD SD GS Qrr Reverserecoverycharge VDS=30V,IF=22A, 100 nC t Reverserecoverytime di/dt=300A/μs 40 ns rr 5.2 Thermal Information T =25°C(unlessotherwisestated) A THERMALMETRIC MIN TYP MAX UNIT R Junction-to-casethermalresistance(1) 1.0 °C/W θJC R Junction-to-ambientthermalresistance(1)(2) 50 °C/W θJA (1) R isdeterminedwiththedevicemountedona1-in2(6.45-cm2),2-oz(0.071-mm)thickCupadona1.5-in×1.5-in(3.81-cm×3.81- θJC cm),0.06-in(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. θJC θJA (2) DevicemountedonFR4materialwith1-in2(6.45-cm2),2-oz(0.071-mm)thickCu. 4 SubmitDocumentationFeedback Copyright©2012–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD18531Q5A

CSD18531Q5A www.ti.com SLPS321G–JUNE2012–REVISEDAUGUST2017 GATE Source GATE Source N N - - C C h h a a n n MaxR =50°C/W MaxR =125°C/W 5x θJA 5x θJA 6 whenmountedon1in2 6 whenmountedona Q Q FN (6.45cm2)of FN minimumpadareaof TT 2-oz(0.071-mm)thick TT 2-oz(0.071-mm)thick A A M Cu. M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 5.3 Typical MOSFET Characteristics T =25°C(unlessotherwisestated) A Figure1.TransientThermalImpedance Copyright©2012–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD18531Q5A

CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 www.ti.com Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 200 140 TC = 125° C nt (A) 115705 nt (A) 120 TTCC == 2-555° °C C urre urre 100 C 125 C ce ce 80 our 100 our o-S o-S 60 n-t 75 n-t Drai 50 Drai 40 I - DS 25 VVGGSS == 46..55 VV I - DS 20 VGS = 10 V 0 0 0 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) D002 VGS - Gate-to-Source Voltage (V) D003 V =5V DS Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 10 10000 V) ge ( 8 1000 e Volta 6 ce (pF) c n Sour acita 100 Gate-to- 4 C - Cap 10 - GS 2 Ciss = Cgd + Cgs V Coss = Cds + Cgd Crss = Cgd 0 1 0 5 10 15 20 25 30 35 0 10 20 30 40 50 60 Qg - Gate Charge (nC) D004 VDS - Drain-to-Source Voltage (V) D005 V =30V I =22A DS D Figure4.GateCharge Figure5.Capacitance 2.4 12 TC = 25° C, ID = 22 A :) TC = 125° C, ID = 22 A oltage (V) 12..81 stance (m 180 V si hold 1.5 e Re 6 V - ThresGS(th) 01..92 - On-StatS(on) 24 D R 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (° C) D006 VGS - Gate-to-Source Voltage (V) D007 I =250µA D Figure6.ThresholdVoltagevsTemperature Figure7.On-StateResistancevsGate-to-SourceVoltage 6 SubmitDocumentationFeedback Copyright©2012–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD18531Q5A

CSD18531Q5A www.ti.com SLPS321G–JUNE2012–REVISEDAUGUST2017 Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 2.2 100 VGS = 4.5 V TC = 25° C ce 2 VGS = 10 V A) 10 TC = 125° C esistan 11..68 urrent ( 1 R C e n at 1.4 ai St Dr 0.1 zed On- 1.21 urce-to- 0.01 ormali 0.8 - SoD 0.001 N S 0.6 I 0.4 0.0001 -75 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (° C) D008 VSD - Source-to-Drain Voltage (V) D009 I =22A D Figure8.NormalizedOn-StateResistancevsTemperature Figure9.TypicalDiodeForwardVoltage 1000 100 TC = 25q C A) A) TC = 125q C nt ( 100 nt ( e e urr urr C C e e c h o-Sour 10 valanc ain-t ak A Dr 1 Pe I - DS D10C ms 11000 µ µss I - AV 1 ms 0.1 10 0.1 1 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) D010 TAV - Time in Avalanche (ms) D011 SinglepulseR =1.0°C/W θJC Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching 120 A) 100 nt ( e urr 80 C e c our 60 S o- n-t 40 ai Dr - S 20 D I 0 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (° C) D012 Figure12.MaximumDrainCurrentvsTemperature Copyright©2012–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD18531Q5A

CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 www.ti.com 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed.Forchangedetails,reviewtherevisionhistoryincludedinanyreviseddocument. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 6.3 Trademarks NexFET,E2EaretrademarksofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 6.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 8 SubmitDocumentationFeedback Copyright©2012–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD18531Q5A

CSD18531Q5A www.ti.com SLPS321G–JUNE2012–REVISEDAUGUST2017 7 Mechanical Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 Q5A Package Dimensions E2 L H K q 1 8 8 1 2 7 7 2 e D1 D2 3 6 6 3 5 4 5 4 L1 b Top View Side View Bottom View q E1 A c E Front View M0135-01 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 — — L 0.51 0.61 0.71 L1 0.06 0.13 0.20 θ 0° — 12° Copyright©2012–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:CSD18531Q5A

CSD18531Q5A SLPS321G–JUNE2012–REVISEDAUGUST2017 www.ti.com 7.2 Recommended PCB Pattern Recommended PCB Pattern (continued) F1 MILLIMETERS INCHES F6 F7 DIM MIN MAX MIN MAX F1 6.205 6.305 0.244 0.248 5 4 F2 4.46 4.56 0.176 0.18 9 5 F F F3 4.46 4.56 0.176 0.18 F4 0.65 0.7 0.026 0.028 F2 F11 F3 F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 F7 0.7 0.8 0.028 0.031 8 1 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 F10 F10 4.9 5 0.193 0.197 8 4 F F F11 4.46 4.56 0.176 0.18 M0139-01 For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 7.3 Recommended Stencil Opening (0.020) 8x 0.500 (0.020) 0.500 0.500 (0.020) 8x 4 5 1.585 1.235 (0.024) (0.062) (0.049) 0.620 (0.170)4.310 0.385 (0.015) 1.570(0.062) 4x 1.270(0.050) 8 1 0.615 1.105 (0.024) (0.044) 3.020 (0.119) 10 SubmitDocumentationFeedback Copyright©2012–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD18531Q5A

CSD18531Q5A www.ti.com SLPS321G–JUNE2012–REVISEDAUGUST2017 7.4 Q5A Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10sprockethole-pitchcumulativetolerance±0.2. 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm. 3. Material:blackstatic-dissipativepolystyrene. 4. Alldimensionsareinmm(unlessotherwisespecified). 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket. Copyright©2012–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:CSD18531Q5A

PACKAGE OPTION ADDENDUM www.ti.com 30-Jun-2018 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD18531Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS CU SN Level-1-260C-UNLIM -55 to 150 CSD18531 Exempt) CSD18531Q5AT ACTIVE VSONP DQJ 8 250 Pb-Free (RoHS CU SN Level-1-260C-UNLIM -55 to 150 CSD18531 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 30-Jun-2018 Addendum-Page 2

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