Product Sample & Technical Tools & Support & Folder Buy Documents Software Community CSD18502KCS SLPS367B–AUGUST2012–REVISEDJULY2014 CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • Ultra-LowQ andQ 1• LowThermaglResistgadnce TA=25°C TYPICALVALUE UNIT VDS Drain-to-SourceVoltage 40 V • AvalancheRated Qg GateChargeTotal(10V) 52 nC • LogicLevel Qgd GateChargeGate-to-Drain 8.4 nC • PbFreeTerminalPlating VGS=4.5V 3.3 mΩ RDS(on) Drain-to-SourceOnResistance • RoHSCompliant VGS=10V 2.4 mΩ • HalogenFree VGS(th) ThresholdVoltage 1.8 V • TO-220PlasticPackage OrderingInformation(1) 2 Applications Device Package Media Qty Ship TO-220Plastic CSD18502KCS Tube 50 Tube • DC-DCConversion Package • SecondarySideSynchronousRectifier (1) For all available packages, see the orderable addendum at theendofthedatasheet. • MotorControl AbsoluteMaximumRatings 3 Description TA=25°C VALUE UNIT This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power VDS Drain-to-SourceVoltage 40 V conversionapplications. VGS Gate-to-SourceVoltage ±20 V ContinuousDrainCurrent(Packagelimited) 100 Drain (Pin 2) ContinuousDrainCurrent(Siliconlimited), 212 ID TC=25°C A ContinuousDrainCurrent(Siliconlimited), 150 TC=100°C IDM PulsedDrainCurrent(1) 400 A Gate PD PowerDissipation 259 W (Pin 1) TJ, OperatingJunctionand –55to175 °C Tstg StorageTemperatureRange AvalancheEnergy,singlepulse Source (Pin 3) EAS ID=81A,L=0.1mH,RG=25Ω 330 mJ (1) Max R = 0.6ºC/W, pulse duration ≤100 μs, duty cycle θJC ≤1% R vsV GateCharge DS(on) GS 12 10 ) TC = 25°C Id = 100A ID = 100A We (m 10 TC = 125ºC Id = 100A ge (V) 8 VDS = 20V c a sistan 8 e Volt 6 e c On-State R 46 ate-to-Sour 4 - ()DSon 2 V - GGS 2 R 0 0 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 45 50 55 VGS - Gate-to- Source Voltage (V) G001 Qg - Gate Charge (nC) G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD18502KCS SLPS367B–AUGUST2012–REVISEDJULY2014 www.ti.com Table of Contents 1 Features.................................................................. 1 5.3 TypicalMOSFETCharacteristics..............................4 2 Applications........................................................... 1 6 DeviceandDocumentationSupport.................... 7 3 Description............................................................. 1 6.1 Trademarks...............................................................7 4 RevisionHistory..................................................... 2 6.2 ElectrostaticDischargeCaution................................7 6.3 Glossary....................................................................7 5 Specifications......................................................... 3 7 Mechanical,Packaging,andOrderable 5.1 ElectricalCharacteristics...........................................3 Information............................................................. 8 5.2 ThermalInformation..................................................3 7.1 KCSPackageDimensions........................................8 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionA(October2012)toRevisionB Page • IncreasedtheT =25ºcontinuousdraincurrentto212A .................................................................................................... 1 C • IncreasedtheT =125ºcontinuousdraincurrentto150A .................................................................................................. 1 C • Increasedthepulseddraincurrentto400A ......................................................................................................................... 1 • Increasedthemaxpowerdissipationto259W..................................................................................................................... 1 • Increasedthemaxoperatingjunctionandstoragetemperatureto175º............................................................................... 1 • Updatedthepulsedcurrentconditions .................................................................................................................................. 1 • UpdatedFigure1fromanormalizedR toanR curve................................................................................................... 4 θJA θJC • UpdatedFigure6toextendto175°C .................................................................................................................................... 5 • UpdatedFigure8toextendto175°C .................................................................................................................................... 5 • UpdatedtheSOAinFigure10 .............................................................................................................................................. 6 • UpdatedFigure12toextendto175°C .................................................................................................................................. 6 ChangesfromOriginal(August2012)toRevisionA Page • ChangedtheTransconductanceTYPvalueFrom:149STo:138S..................................................................................... 3 • ChangedR From:65°C/WTo:62°C/W.............................................................................................................................. 3 θJA 2 SubmitDocumentationFeedback Copyright©2012–2014,TexasInstrumentsIncorporated ProductFolderLinks:CSD18502KCS

CSD18502KCS www.ti.com SLPS367B–AUGUST2012–REVISEDJULY2014 5 Specifications 5.1 Electrical Characteristics (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-SourceVoltage V =0V,I =250μA 40 V DSS GS D I Drain-to-SourceLeakageCurrent V =0V,V =32V 1 μA DSS GS DS I Gate-to-SourceLeakageCurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-SourceThresholdVoltage V =V ,I =250μA 1.5 1.8 2.1 V GS(th) DS GS D V =4.5V,I =100A 3.3 4.3 mΩ GS D R Drain-to-SourceOnResistance DS(on) V =10V,I =100A 2.4 2.9 mΩ GS D g Transconductance V =20V,I =100A 138 S ƒs DS D DYNAMICCHARACTERISTICS C InputCapacitance 3900 4680 pF iss C OutputCapacitance V =0V,V =20V,ƒ=1MHz 900 1080 pF oss GS DS C ReverseTransferCapacitance 21 26 pF rss R SeriesGateResistance 1.2 2.4 Ω G Q GateChargeTotal(4.5V) 25 30 nC g Q GateChargeTotal(10V) 52 62 nC g Q GateChargeGate-to-Drain V =20V,I =100A 8.4 nC gd DS D Q GateChargeGate-to-Source 10.3 nC gs Q GateChargeatV 7.5 nC g(th) th Q OutputCharge V =20V,V =0V 52 nC oss DS GS t TurnOnDelayTime 11 ns d(on) tr RiseTime VDS=20V,VGS=10V, 7.3 ns td(off) TurnOffDelayTime IDS=100A,RG=0Ω 33 ns t FallTime 9.3 ns ƒ DIODECHARACTERISTICS V DiodeForwardVoltage I =100A,V =0V 0.8 1 V SD SD GS Qrr ReverseRecoveryCharge VDS=20V,IF=100A, 105 nC t ReverseRecoveryTime di/dt=300A/μs 48 ns rr 5.2 Thermal Information (T =25°Cunlessotherwisestated) A THERMALMETRIC MIN TYP MAX UNIT R Junction-to-CaseThermalResistance 0.6 θJC °C/W R Junction-to-AmbientThermalResistance 62 θJA Copyright©2012–2014,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD18502KCS

CSD18502KCS SLPS367B–AUGUST2012–REVISEDJULY2014 www.ti.com 5.3 Typical MOSFET Characteristics (T =25°Cunlessotherwisestated) A Figure1. TransientThermalImpedance 180 200 A) 160 A) 180 VDS = 5V Current ( 112400 Current ( 114600 Source 18000 Source 110200 I - Drain-to-DS 246000 VVVGGGSSS ===1640..55VVV I - Drain-to-DS 24680000 TTTCCC === 12−2555°5C°°CC 0 0 0 0.5 1 1.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) G001 VGS - Gate-to-Source Voltage (V) G001 Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 4 SubmitDocumentationFeedback Copyright©2012–2014,TexasInstrumentsIncorporated ProductFolderLinks:CSD18502KCS

CSD18502KCS www.ti.com SLPS367B–AUGUST2012–REVISEDJULY2014 Typical MOSFET Characteristics (continued) (T =25°Cunlessotherwisestated) A 10 50000 ID = 100A Ciss = Cgd + Cgs e-to-Source Voltage (V) 468 VDS = 20V Capacitance (pF)110000000 CCorssss == CCdgsd + Cgd Gat C − 100 - S 2 G V 0 10 0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 Qg - Gate Charge (nC) G001 VDS - Drain-to-Source Voltage (V) G001 Figure4.GateCharge Figure5.Capacitance 2.4 12 ID = 250uA ) TC = 25°C Id = 100A e (V) 2.22 We (m 10 TC = 125ºC Id = 100A g c a n d Volt 11..68 esista 8 eshol 1.4 ate R 6 hr St V - T()GSth 01..812 - On-()DSon 24 R 0.6 0 −75 −50 −25 0 25 50 75 100 125 150 175 200 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (ºC) G001 VGS - Gate-to- Source Voltage (V) G001 Figure6.ThresholdVoltagevs.Temperature Figure7.On-StateResistancevs.Gate-to-SourceVoltage 2.2 100 VGS = 4.5V TC = 25°C stance 1.82 VGS = 10V ent (A) 10 TC = 125°C Resi 1.6 Curr 1 e n Stat 1.4 Drai 0.1 n- 1.2 o- ormalized O 0.81 − Source-tD 0.00.0011 N 0.6 S ID = 100A I 0.4 0.0001 −75 −50 −25 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (ºC) G001 VSD − Source-to-Drain Voltage (V) G001 Figure8.NormalizedOn-StateResistancevs.Temperature Figure9.TypicalDiodeForwardVoltage Copyright©2012–2014,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD18502KCS

CSD18502KCS SLPS367B–AUGUST2012–REVISEDJULY2014 www.ti.com Typical MOSFET Characteristics (continued) (T =25°Cunlessotherwisestated) A 5000 100 10us 1ms DC nt (A)1000 100us 10ms nt (A) e e urr urr C 100 C e e c h ur nc o a ain-to-S 10 ak Aval - DrDS 1 Single Pulse - PeAV TC = 25ºC I Max RthetaJC = 0.6ºC/W I TC = 125ºC 0.1 10 0.1 1 10 100 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) G001 TAV - Time in Avalanche (mS) G001 Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching 120 A) nt ( 100 e Curr 80 e c ur o 60 S o- n- t 40 ai Dr - S 20 D I 0 −50 −25 0 25 50 75 100 125 150 175 200 TC - Case Temperature (ºC) G001 Figure12. MaximumDrainCurrentvs.Temperature 6 SubmitDocumentationFeedback Copyright©2012–2014,TexasInstrumentsIncorporated ProductFolderLinks:CSD18502KCS

CSD18502KCS www.ti.com SLPS367B–AUGUST2012–REVISEDJULY2014 6 Device and Documentation Support 6.1 Trademarks NexFETisatrademarkofTexasInstruments. 6.2 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.3 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. Copyright©2012–2014,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD18502KCS

CSD18502KCS SLPS367B–AUGUST2012–REVISEDJULY2014 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 KCS Package Dimensions Notes: 1. Alllineardimensionsareininches. 2. Thisdrawingissubjecttochangewithoutnotice. 3. Leaddimensionsarenotcontrolledwithin'C'area 4. Allleaddimensionsapplybeforesolderdip. 5. Thecenterleadisinelectricalcontactwiththemountingtab. 6. Thechamferat'F'isoptional. 7. Thermalpadcontourat'G'optionalwiththesedimensions 8. 'H' falls within JEDEC TO-220 variation AB, except minimum lead thickness, minimum exposed pad length, andmaximumbodylength. PinConfiguration Position Designation Pin1 Gate Pin2/Tab Drain Pin3 Source 8 SubmitDocumentationFeedback Copyright©2012–2014,TexasInstrumentsIncorporated ProductFolderLinks:CSD18502KCS

PACKAGE OPTION ADDENDUM www.ti.com 5-Jan-2019 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD18502KCS ACTIVE TO-220 KCS 3 50 Pb-Free (RoHS CU SN N / A for Pkg Type -55 to 175 CSD18502KCS Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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