CSD17555Q5A www.ti.com SLPS353–JUNE2012 30V N-Channel NexFET™ Power MOSFETs CheckforSamples:CSD17555Q5A FEATURES PRODUCTSUMMARY 1 • UltralowQ andQ TA=25°Cunlessotherwisestated TYPICALVALUE UNIT 2• LowThermgalResigsdtance VDS DraintoSourceVoltage 30 V Qg GateChargeTotal(4.5V) 23 nC • AvalancheRated Qgd GateChargeGatetoDrain 5 nC • PbFreeTerminalPlating VGS=4.5V 2.8 mΩ RDS(on) DraintoSourceOnResistance • RoHSCompliant VGS=10V 2.3 mΩ • HalogenFree VGS(th) ThresholdVoltage 1.5 V • SON5-mm×6-mmPlasticPackage ORDERINGINFORMATION APPLICATIONS Device Package Media Qty Ship SON5-mm×6-mm 13-Inch Tapeand CSD17555Q5A 2500 • Point-of-LoadSynchronousBuckin PlasticPackage Reel Reel Networking,Telecom,andComputingSystems • OptimizedforControlandSynchronousFET ABSOLUTEMAXIMUMRATINGS Applications TA=25°Cunlessotherwisestated VALUE UNIT VDS DraintoSourceVoltage 30 V DESCRIPTION VGS GatetoSourceVoltage ±20 V The NexFET™ power MOSFET has been designed ContinuousDrainCurrent(Packagelimited), 100 tominimizelossesinpowerconversionapplications. TC=25°C A ID ContinuousDrainCurrent(Siliconlimited), 116 TopView TC=25°C ContinuousDrainCurrent(1) 24 A S 1 8 D IDM PulsedDrainCurrent,TA=25°C(2) 153 A PD PowerDissipation(1) 3 W S 2 7 D TJ, OperatingJunctionandStorage –55to150 °C TSTG TemperatureRange AvalancheEnergy,singlepulse S 3 6 D EAS ID=60A,L=0.1mH,RG=25Ω 180 mJ D (1) Typical R = 42°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071- G 4 5 D θJA mmthick)Cupadona0.06-inch(1.52-mm)thickFR4PCB. P0093-01 (2) Pulseduration≤300μs,dutycycle≤2% SPACE SPACE R vsV GATECHARGE DS(on) GS 10 10 We - m 89 TTCC == 2152°5CºC IIdd == 2255AA ge (V) 8 IVDD =S 2=51A5V anc 7 olta st V si 6 e 6 e c e R 5 our n-Stat 4 e-to-S 4 O 3 at - ()Son 2 - GGS 2 RD 1 V 0 0 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 VGS - Gate-to- Source Voltage - V G001 Qg - Gate Charge - nC (nC) G001 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. NexFETisatrademarkofTexasInstruments. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2012,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CSD17555Q5A SLPS353–JUNE2012 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ELECTRICAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =250μA 30 V DSS GS DS I DraintoSourceLeakageCurrent V =0V,V =24V 1 μA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =20V 100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =250μA 1 1.5 1.9 V GS(th) DS GS DS V =4.5V,I =25A 2.8 3.4 mΩ GS DS R DraintoSourceOnResistance DS(on) V =10V,I =25A 2.3 2.7 mΩ GS DS g Transconductance V =15V,I =25A 109 S fs DS DS DynamicCharacteristics C InputCapacitance 3875 4650 pF iss V =0V,V =15V, C OutputCapacitance GS DS 949 1139 pF oss f=1MHz C ReverseTransferCapacitance 70 87 pF rss R SeriesGateResistance 0.8 1.6 Ω G Q GateChargeTotal(4.5V) 23 28 nC g Q GateChargeGatetoDrain 5 nC gd V =15V,I =25A DS DS Q GateChargeGatetoSource 7.5 nC gs Q GateChargeatVth 5 nC g(th) Q OutputCharge V =14V,V =0V 25 nC oss DS GS t TurnOnDelayTime 14 ns d(on) tr RiseTime VDS=15V,VGS=4.5V, 18 ns td(off) TurnOffDelayTime IDS=25A,RG=2Ω 20 ns t FallTime 5.3 ns f DiodeCharacteristics V DiodeForwardVoltage I =25A,V =0V 0.8 1 V SD SD GS Q ReverseRecoveryCharge 31 nC rr V =14V,I =25A,di/dt=300A/μs DD F t ReverseRecoveryTime 25 ns rr THERMAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER MIN TYP MAX UNIT R ThermalResistanceJunctiontoCase(1) 2.2 °C/W θJC R ThermalResistanceJunctiontoAmbient(1)(2) 52 °C/W θJA (1) R isdeterminedwiththedevicemountedona1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cupadona1.5-inch×1.5-inch(3.81-cm× θJC 3.81-cm),0.06-inch(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. θJC θJA (2) DevicemountedonFR4materialwith1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cu. 2 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A www.ti.com SLPS353–JUNE2012 GATE Source GATE Source N N - - C C h h a a n n MaxR =52°C/W MaxR =128°C/W 5x θJA 5x θJA 6 whenmountedon 6 whenmountedona Q Q FN 1inch2(6.45cm2)of2- FN minimumpadareaof TT oz.(0.071-mmthick) TT 2-oz.(0.071-mmthick) A A M Cu. M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 TYPICAL MOSFET CHARACTERISTICS (T =25°Cunlessotherwisestated) A Figure1. TransientThermalImpedance Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A SLPS353–JUNE2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 140 200 nt - A 120 VVVGGGSSS ===1640..55VVV nt - A 116800 VDS = 5V urre 100 VGS =2.5V urre 140 C C ce 80 ce 120 our our 100 o-S 60 o-S 80 n-t n-t ai 40 ai 60 Dr Dr I - DS 20 I - DS 2400 TTTCCC === 12−2555°5C°°CC 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage - V G001 VGS - Gate-to-Source Voltage - V G001 Figure2.SaturationCharacteristics Figure3.TransferCharacteristics TEXTADDEDFORSPACING TEXTADDEDFORSPACING 10 6 ID = 25A Ciss = Cgd + Cgs age (V) 8 VDS =15V F 5 CCorssss == CCdgsd + Cgd ate-to-Source Volt 46 − Capacitance − n 234 G C - S 2 1 G V 0 0 0 5 10 15 20 25 30 35 40 45 0 3 6 9 12 15 18 21 24 27 30 Qg - Gate Charge - nC (nC) G001 VDS - Drain-to-Source Voltage - V G001 Figure4.GateCharge Figure5.Capacitance TEXTADDEDFORSPACING TEXTADDEDFORSPACING 2.5 10 ID = 250uA 9 TC = 25°C Id = 25A V Wm TC = 125ºC Id = 25A e - 2 e - 8 d Voltag 1.5 esistanc 67 eshol ate R 5 hr 1 St 4 V - T()GSth 0.5 - On-()Son 23 RD 1 0 0 −75 −25 25 75 125 175 0 2 4 6 8 10 12 TC - Case Temperature - ºC G001 VGS - Gate-to- Source Voltage - V G001 Figure6.ThresholdVoltagevs.Temperature Figure7.On-StateResistancevs.Gate-to-SourceVoltage 4 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A www.ti.com SLPS353–JUNE2012 TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 2.4 100 VGS = 4.5V ID =25A TC = 25°C stance 2.1 VGS = 10V ent - A 10 TC = 125°C Resi 1.8 Curr 1 State 1.5 Drain 0.1 alized On- 01..92 Source-to- 0.01 orm 0.6 − D 0.001 N S I 0.3 0.0001 −75 −25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature - ºC G001 VSD − Source-to-Drain Voltage - V G001 Figure8.NormalizedOn-StateResistancevs.Temperature Figure9.TypicalDiodeForwardVoltage TEXTADDEDFORSPACING TEXTADDEDFORSPACING 2000 200 urrent - A1100000 11m0mss 110s0ms DC Current- A 100 TTCC == 2152º5CºC ce C 10 che ain-to-Sour 1 eak Avalan - DrDS 0.1 Single Pulse I - PAV I Typical RthetaJA =102ºC/W(min Cu) - 0.01 10 0.01 0.1 1 10 50 0.01 0.1 1 2 VDS - Drain-to-Source Voltage - V G001 TAV - Time in Avalanche - mS G001 Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching TEXTADDEDFORSPACING TEXTADDEDFORSPACING 160.0 Package limited A nt - 140.0 Silicon limited e urr120.0 C e 100.0 c ur So 80.0 o- n- t 60.0 ai Dr 40.0 - S D20.0 I - 0.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature - ºC G001 Figure12. MaximumDrainCurrentvs.Temperature Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A SLPS353–JUNE2012 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L H K q 1 8 8 1 2 7 7 2 e D1 D2 3 6 6 3 5 4 5 4 b L1 Top View Side View Bottom View q A c E1 E Front View M0135-01 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 θ 0° 12° 6 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A www.ti.com SLPS353–JUNE2012 Recommended PCB Pattern 4.900 (0.193) 0.630 (0.025) 0.605 (0.024) 5 4 0.620 (0.024) 4.460 1.270 (0.176) (0.050) 0.650 (0.026) 8 1 3.102 (0.122) 1.798 (0.071) 0.700 (0.028) M0139-01 NOTE: Dimensionsareinmm(inches). TEXT ADDED FOR SPACING Stencil Recommendation 0.500 (0.020) 1.235 (0.049) 1.585 (0.062) 0.500 (0.020) 5 4 0.450 (0.018) 1.570 (0.062) 0.620 (0.024) 1.270 4.260 (0.050) (0.168) 1.570 (0.062) PCB Pattern 8 1 0.632 (0.025) 1.088 (0.043) 3.037 (0.120) Stencil Opening M0209-01 NOTE: Dimensionsareinmm(inches). TEXT ADDED FOR SPACING For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCBLayoutTechniques. Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):CSD17555Q5A

CSD17555Q5A SLPS353–JUNE2012 www.ti.com Q5A Tape and Reel Information K0 0.30 ±0.05 4.00 ±0.10 (See Note 1) 2.00 ±0.05 Ø 1.50 +0.10 –0.00 1.75 ±0.10 5.50 ±0.05 12.00 ±0.30 B0 R 0.30 MAX A0 8.00 ±0.10 Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 NOTES: 1.10-sprockethole-pitchcumulativetolerance±0.2 2.Cambernottoexceed1mmin100mm,noncumulativeover250mm 3.Material:blackstatic-dissipativepolystyrene 4.Alldimensionsareinmm(unlessotherwisespecified) 5.A0andB0measuredonaplane0.3mmabovethebottomofthepocket Spacer 8 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17555Q5A

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17555Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17555 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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