CSD17552Q5A www.ti.com SLPS428–NOVEMBER2012 30-V, N-Channel NexFET™ Power MOSFETs CheckforSamples:CSD17552Q5A FEATURES 1 PRODUCTSUMMARY • UltraLowQgandQgd VDS DraintoSourceVoltage 30 V • LowThermalResistance Qg GateChargeTotal(4.5V) 9.0 nC • AvalancheRated Qgd GateChargeGatetoDrain 2.0 nC • PbFreeTerminalPlating VGS=4.5V 6.1 mΩ RDS(on) DraintoSourceOnResistance • RoHSCompliant VGS=10V 5.1 mΩ • HalogenFree VGS(th) ThresholdVoltage 1.5 V • SON5-mm×6-mmPlasticPackage ORDERINGINFORMATION APPLICATIONS Device Package Media Qty Ship SON5-mm×6-mm 13-Inch Tapeand CSD17552Q5A 2500 • PointofloadSynchronousBuckin PlasticPackage Reel Reel Networking,TelecomandComputingSystems • OptimizedforControlFETApplications ABSOLUTEMAXIMUMRATINGS TA=25°Cunlessotherwisestated VALUE UNIT DESCRIPTION VDS DraintoSourceVoltage 30 V The NexFET power MOSFET has been designed to VGS GatetoSourceVoltage ±20 V minimizelossesinpowerconversionapplications. ContinuousDrainCurrent,TC=25°C 60 A ID ContinuousDrainCurrent,SiliconLimitted 88 A Figure1. TopView ContinuousDrainCurrent,TA=25°C(1) 17 A IDM PulsedDrainCurrent,TA=25°C(2) 106 A S 1 8 D PD PowerDissipation(1) 3.0 W TJ, OperatingJunctionandStorage –55to150 °C S 2 7 D TSTG TemperatureRange AvalancheEnergy,singlepulse S 3 6 D EAS ID=30A,L=0.1mH,RG=25Ω 45 mJ (1) Typical R = 40°C/W on a 1-inch2 (6.45-cm2), D θJA G 4 5 D 2-oz.(0.071-mmthick)Cupadona0.06-inch(1.52-mm)thick FR4PCB. P0093-01 (2) Pulseduration≤300μs,dutycycle≤2% R vsV GATECHARGE DS(on) GS 18 10 We (m) 1146 TTCC == 2152°5CºC IIdd == 1155AA ge (V) 8 IVDD =S 1=51A5V stanc 12 Volta si e 6 e Re 10 ourc n-Stat 68 e-to-S 4 O at - ()DSon 24 V - GGS 2 R 0 0 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12 16 20 VGS - Gate-to- Source Voltage (V) G001 Qg - Gate Charge (nC) G001 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsof TexasInstrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2012,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CSD17552Q5A SLPS428–NOVEMBER2012 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ELECTRICAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =250μA 30 V DSS GS D I DraintoSourceLeakageCurrent V =0V,V =24V 1 μA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =20V 100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =250μA 1.1 1.5 1.9 V GS(th) DS GS D V =4.5V,I =15A 6.1 7.5 mΩ GS D R DraintoSourceOnResistance DS(on) V =10V,I =15A 5.1 6.2 mΩ GS D g Transconductance V =15V,I =15A 77 S fs DS D DynamicCharacteristics C InputCapacitance 1580 2050 pF iss C OutputCapacitance V =0V,V =15V,f=1MHz 385 500 pF oss GS DS C ReverseTransferCapacitance 28 36 pF rss R SeriesGateResistance 0.9 1.8 Ω G Q GateChargeTotal(4.5V) 9.0 12 nC g Q GateChargeGatetoDrain 2.0 nC gd V =15V,I =15A DS D Q GateChargeGatetoSource 3.6 nC gs Q GateChargeatVth 2.1 nC g(th) Q OutputCharge V =15V,V =0V 11 nC oss DS GS t TurnOnDelayTime 7.6 ns d(on) tr RiseTime VDS=15V,VGS=4.5V, 11.4 ns td(off) TurnOffDelayTime IDS=15A,RG=2Ω 12.2 ns t FallTime 3.6 ns f DiodeCharacteristics V DiodeForwardVoltage I =11A,V =0V 0.8 1 V SD SD GS Qrr ReverseRecoveryCharge VDS=13V,IF=15A, 20 nC t ReverseRecoveryTime di/dt=300A/μs 18 ns rr THERMAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER MIN TYP MAX UNIT R ThermalResistanceJunctiontoCase(1) 1.8 °C/W θJC R ThermalResistanceJunctiontoAmbient(1)(2) 50 °C/W θJA (1) R isdeterminedwiththedevicemountedona1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cupadona1.5-inch×1.5-inch(3.81-cm× θJC 3.81-cm),0.06-inch(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. θJC θJA (2) DevicemountedonFR4materialwith1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cu. 2 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLinks:CSD17552Q5A

CSD17552Q5A www.ti.com SLPS428–NOVEMBER2012 GATE Source GATE Source MaxR =50°C/W MaxR =125°C/W θJA θJA whenmountedon whenmountedona 1inch2(6.45cm2)of2- minimumpadareaof oz.(0.071-mmthick) 2-oz.(0.071-mmthick) Cu. Cu. DRAIN DRAIN M0161-01 M0161-02 TYPICAL MOSFET CHARACTERISTICS (T =25°Cunlessotherwisestated) A Figure2. TransientThermalImpedance TEXTADDEDFORSPACING TEXTADDEDFORSPACING 100 100 VDS = 5V A) A) nt ( 80 nt ( 80 e e urr urr C C e 60 e 60 c c ur ur o o S S o- 40 o- 40 n-t n-t ai ai Dr Dr - DS 20 VVGGSS ==160VV - DS 20 TTCC == 12255°C°C I VGS =4.5V I TC = −55°C 0 0 0 0.5 1 1.5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) G001 VGS - Gate-to-Source Voltage (V) G001 Figure3.SaturationCharacteristics Figure4.TransferCharacteristics Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD17552Q5A

CSD17552Q5A SLPS428–NOVEMBER2012 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 10 100000 ID = 15A Ciss = Cgd + Cgs e-to-Source Voltage (V) 468 VDS =15V Capacitance (pF) 110000000 CCorssss == CCdgsd + Cgd at − G C 100 - S 2 G V 0 10 0 4 8 12 16 20 0 10 20 30 Qg - Gate Charge (nC) G001 VDS - Drain-to-Source Voltage (V) G001 Figure5.GateCharge Figure6.Capacitance TEXTADDEDFORSPACING TEXTADDEDFORSPACING 2.1 18 V) 1.9 ID = 250uA Wm) 16 TTCC == 2152°5CºC IIdd == 1155AA e ( e ( 14 hold Voltag 11..57 e Resistanc 1102 es 1.3 at 8 hr St V - T()GSth 01..91 - On-()DSon 246 R 0.7 0 −75 −25 25 75 125 175 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (ºC) G001 VGS - Gate-to- Source Voltage (V) G001 Figure7.ThresholdVoltagevs.Temperature Figure8.On-StateResistancevs.Gate-to-SourceVoltage TEXTADDEDFORSPACING TEXTADDEDFORSPACING 2.2 100 VGS = 4.5V ID =15A TC = 25°C stance 1.82 VGS = 10V ent (A) 10 TC = 125°C Resi 1.6 Curr 1 e n Stat 1.4 Drai 0.1 n- 1.2 o- ormalized O 0.81 − Source-tD 0.00.0011 N 0.6 S I 0.4 0.0001 −75 −25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature (ºC) G001 VSD − Source-to-Drain Voltage (V) G001 Figure9.NormalizedOn-StateResistancevs.Temperature Figure10.TypicalDiodeForwardVoltage 4 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLinks:CSD17552Q5A

CSD17552Q5A www.ti.com SLPS428–NOVEMBER2012 TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1000 100 1ms 100ms DC TC = 25ºC nt (A) 100 10ms 1s nt (A) TC = 125ºC e e urr urr C C e 10 e c h our anc 10 ain-to-S 1 ak Aval Dr Pe - DS 0.1 Single Pulse - AV I Typical RthetaJA =100ºC/W(min Cu) I 0.01 1 0.01 0.1 1 10 50 0.01 0.1 1 VDS - Drain-to-Source Voltage (V) G001 TAV - Time in Avalanche (mS) G001 Figure11.MaximumSafeOperatingArea Figure12.SinglePulseUnclampedInductiveSwitching TEXTADDEDFORSPACING 140.0 Package limited nt (A) 120.0 Silicon limited e urr 100.0 C e c 80.0 ur o S o- 60.0 n- t ai 40.0 Dr - S 20.0 D I 0.0 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 Figure13. MaximumDrainCurrentvs.Temperature Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD17552Q5A

CSD17552Q5A SLPS428–NOVEMBER2012 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L H K q 1 8 8 1 2 7 7 2 e D1 D2 3 6 6 3 5 4 5 4 L1 b Top View Side View Bottom View q E1 A c E Front View M0135-01 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 θ 0° 12° 6 SubmitDocumentationFeedback Copyright©2012,TexasInstrumentsIncorporated ProductFolderLinks:CSD17552Q5A

CSD17552Q5A www.ti.com SLPS428–NOVEMBER2012 MILLIMETERS INCHES Figure14. RecommendedPCBPattern DIM MIN MAX MIN MAX F1 F1 6.205 6.305 0.244 0.248 F6 F7 F2 4.46 4.56 0.176 0.18 F3 4.46 4.56 0.176 0.18 5 4 9 5 F4 0.65 0.7 0.026 0.028 F F F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 2 11 3 F F F F7 0.7 0.8 0.028 0.031 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 8 1 F10 4.9 5 0.193 0.197 F11 4.46 4.56 0.176 0.18 F10 8 4 F F M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCBLayoutTechniques. Q5A Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm 3. Material:blackstatic-dissipativepolystyrene 4. Alldimensionsareinmm(unlessotherwisespecified) 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket Copyright©2012,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD17552Q5A

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17552Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17552 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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