Product Order Technical Tools & Support & Folder Now Documents Software Community CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 CSD17507Q5A 30-V N-Channel NexFET™ Power MOSFET 1 Features ProductSummary • Ultra-LowQ andQ 1• Low-ThermaglResistgadnce TA=25°C TYPICALVALUE UNIT VDS Drain-to-SourceVoltage 30 V • AvalancheRated Qg GateChargeTotal(4.5V) 2.8 nC • Lead-FreeTerminalPlating Qgd GateChargeGate-to-Drain 0.7 nC • RoHSCompliant VGS=4.5V 11.8 RDS(on) Drain-to-SourceOnResistance mΩ • HalogenFree VGS=10V 9 • SON5-mm×6-mmPlasticPackage VGS(th) ThresholdVoltage 1.6 V . 2 Applications DeviceInformation(1) • Point-of-LoadSynchronousBuckinNetworking, TelecomandComputingSystems DEVICE MEDIA QTY PACKAGE SHIP CSD17507Q5A 13-InchReel 2500 SON Tape • OptimizedforControlFETApplications 5.00-mm×6.00-mm and CSD17507Q5AT 7-InchReel 250 PlasticPackage Reel 3 Description (1) For all available packages, see the orderable addendum at This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ theendofthedatasheet. power MOSFET has been designed to minimize lossesinpowerconversionapplications. AbsoluteMaximumRatings TA=25°C(unlessotherwisestated) VALUE UNIT TopView VDS Drain-to-SourceVoltage 30 V VGS Gate-to-SourceVoltage ±20 V S 1 8 D ContinuousDrainCurrent 65 ContinuousDrainCurrent(SiliconLimited), S 2 7 D ID TC=25°C 61 A ContinuousDrainCurrent(1) 14 S 3 6 D IDM PulsedDrainCurrent,TC=25°C(2) 163 A D PowerDissipation(1) 3.1 G 4 5 D PD W PowerDissipation,TC=25°C 39 P0093-01 TJ, OperatingJunction, –55to150 °C . TSTG StorageTemperature AvalancheEnergy,SinglePulse . EAS ID=30A,L=0.1mH,RG=25Ω 45 mJ (1) Typical R = 40°C/W on a 1-in2, 2-oz Cu pad on a θJA 0.06-inthickFR4PCB. (2) MaxR =2°C/W,pulseduration≤100μs,dutycycle≤1%. θJC R vsV GateCharge DS(on) GS 30 10 :stance (m) 2205 TTCC == 21525qCqC, I, DI D= = 1 111 A A Voltage (V) 789 IVDD =S 1=1 1 A5 V e Resi 15 ource 56 On-Stat 10 ate-to-S 34 - S(on) 5 - GGS 2 RD V 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) D007 Qg - Gate Charge (nC) D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.

CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 www.ti.com Table of Contents 1 Features.................................................................. 1 6.2 CommunityResources..............................................8 2 Applications........................................................... 1 6.3 Trademarks...............................................................8 3 Description............................................................. 1 6.4 ElectrostaticDischargeCaution................................8 6.5 Glossary....................................................................8 4 RevisionHistory..................................................... 2 7 Mechanical,Packaging,andOrderable 5 Specifications......................................................... 4 Information............................................................. 9 5.1 ElectricalCharacteristics...........................................4 7.1 Q5APackageDimensions........................................9 5.2 ThermalInformation..................................................4 7.2 RecommendedPCBPattern...................................10 5.3 TypicalMOSFETCharacteristics..............................5 7.3 RecommendedStencilOpening.............................11 6 DeviceandDocumentationSupport.................... 8 7.4 Q5ATapeandReelInformation.............................11 6.1 ReceivingNotificationofDocumentationUpdates....8 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionF(November2016)toRevisionG Page • CorrectedpackagesizeintheDescriptionsection................................................................................................................ 1 ChangesfromRevisionE(July2011)toRevisionF Page • ChangedDescriptiontext. ..................................................................................................................................................... 1 • AddedsiliconlimitedcontinuousdraincurrenttoAbsoluteMaximumRatingstable. ........................................................... 1 • ChangedNote2inAbsoluteMaximumRatingstable. .......................................................................................................... 1 • ChangedTHERMALCHARACTERISTICStabletoThermalInformationtable. ................................................................... 4 • ChangedR from1.9°C/W:to2.1°C/W. ............................................................................................................................ 4 θJC • ChangedR from51°C/W:to50°C/W. .............................................................................................................................. 4 θJA • AddedDeviceandDocumentationSupportsection. ............................................................................................................. 8 • ChangedMECHANICALDATAsectiontoMechanical,Packaging,andOrderableInformationsection. ............................ 9 ChangesfromRevisionD(December2010)toRevisionE Page • ChangedV intheAbsMaxRatingstableFrom:+20/-12VTo:±20V. ............................................................................. 1 GS • ChangedI TestConditionsfromV =20V+20/-12V:toV =20V. ......................................................................... 4 GSS GS GS ChangesfromRevisionC(November2010)toRevisionD Page • Changedg TransconductanceTYPvalueFrom:16STo:44S. ........................................................................................ 4 fs ChangesfromRevisionB(September2010)toRevisionC Page • AddedStencilRecommendationillustration. ....................................................................................................................... 11 ChangesfromRevisionA(August2010)toRevisionB Page • AbsoluteMaximumRatings,changedtheE valuefrom145to45mJ. ............................................................................. 1 AS 2 SubmitDocumentationFeedback Copyright©2010–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17507Q5A

CSD17507Q5A www.ti.com SLPS243G–JULY2010–REVISEDJANUARY2017 ChangesfromOriginal(July2010)toRevisionA Page • ChangedtheYaxisscaleforFigure5. ................................................................................................................................. 5 Copyright©2010–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:CSD17507Q5A

CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 www.ti.com 5 Specifications 5.1 Electrical Characteristics T =25°C(unlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT STATICCHARACTERISTICS BV Drain-to-sourcevoltage V =0V,I =250μA 30 V DSS GS DS I Drain-to-sourceleakagecurrent V =0V,V =24V 1 μA DSS GS DS I Gate-to-sourceleakagecurrent V =0V,V =20V 100 nA GSS DS GS V Gate-to-sourcethresholdvoltage V =V ,I =250μA 1.1 1.6 2.1 V GS(th) DS GS DS V =4.5V,I =11A 11.8 16.1 GS DS R Drain-to-sourceonresistance mΩ DS(on) V =10V,I =11A 9.0 10.8 GS DS g Transconductance V =15V,I =11A 44 S fs DS DS DYNAMICCHARACTERISTICS C Inputcapacitance 410 530 pF iss V =0V,V =15V, C Outputcapacitance GS DS 270 350 pF oss ƒ=1MHz C Reversetransfercapacitance 23 30 pF rss R Seriesgateresistance 0.7 1.4 Ω G Q Gatechargetotal(4.5V) 2.8 3.6 nC g Q Gatechargegate-to-drain 0.7 nC gd V =15V,I =11A DS DS Q Gatechargegate-to-source 1.3 nC gs Q GatechargeatVth 0.7 nC g(th) Q Outputcharge V =13V,V =0V 7.2 nC oss DS GS t Turnondelaytime 4.7 ns d(on) tr Risetime VDS=15V,VGS=4.5V, 5.2 ns td(off) Turnoffdelaytime IDS=11A,RG=2Ω 5.7 ns t Falltime 2.3 ns f DIODECHARACTERISTICS V Diodeforwardvoltage I =11A,V =0V 0.85 1 V SD SD GS Q Reverserecoverycharge 11 nC rr V =13V,I =11A,di/dt=300A/μs DS F t Reverserecoverytime 16 ns rr 5.2 Thermal Information T =25°C(unlessotherwisestated) A PARAMETER MIN TYP MAX UNIT R Thermalresistancejunction-to-case(1) 2.1 °C/W θJC R Thermalresistancejunction-to-ambient(1)(2) 50 °C/W θJA (1) R isdeterminedwiththedevicemountedona1-in2(6.45-cm2),2-oz(0.071-mm)thickCupadona1.5-in×1.5-in(3.81-cm×3.81- θJC cm),0.06-in(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. θJC θJA (2) DevicemountedonFR4materialwith1-in2(6.45-cm2),2-oz(0.071-mm)thickCu. 4 SubmitDocumentationFeedback Copyright©2010–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17507Q5A

CSD17507Q5A www.ti.com SLPS243G–JULY2010–REVISEDJANUARY2017 GATE Source GATE Source N N - - C C h h a a n n MaxR =125°C/W 5x MaxR =50°C/W 5x θJA 6 θJA 6 whenmountedona Q whenmountedon1in2 Q FN (6.45cm2)of2-oz FN minimumpadareaof TTA (0.071-mm)thickCu. TTA 2-oz(0.071-mm)thick M M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 5.3 Typical MOSFET Characteristics T =25°C(unlessotherwisestated) A Figure1.TransientThermalImpedance Copyright©2010–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:CSD17507Q5A

CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 www.ti.com Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 100 100 nt (A) 8900 nt (A) 8900 TTTCCC === 12-52555° °C ° CC e e urr 70 urr 70 C C e 60 e 60 c c our 50 our 50 S S o- 40 o- 40 n-t n-t ai 30 ai 30 Dr Dr - DS 20 VGS = 4.5 V - DS 20 I 10 VGS = 6 V I 10 VGS = 10 V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS - Drain-to-Source Voltage (V) D002 VGS - Gate-to-Source Voltage (V) D003 V =5V DS Figure2.SaturationCharacteristics Figure3.TransferCharacteristics 10 10000 e (V) 89 IVDD =S 1=1 1 A5 V CCCiorssssss === CCCggddds ++ CCggsd g olta 7 pF) 1000 Source V 56 acitance ( Gate-to- 34 C - Cap 100 - S 2 G V 1 0 10 0 1 2 3 4 5 6 0 5 10 15 20 25 30 Qg - Gate Charge (nC) D004 VDS - Drain-to-Source Voltage (V) D005 I =11A V =15V D DS Figure4.GateCharge Figure5.Capacitance 2.2 30 TC = 25qC, ID = 11 A 2 :) TC = 125qC, ID = 11 A V) m 25 oltage ( 1.8 stance ( 20 hold V 1.6 e Resi 15 V - ThresGS(th) 11..241 - On-StatDS(on) 105 R 0.8 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 TC - Case Temperature (qC) D006 VGS - Gate-to-Source Voltage (V) D007 I =250µA I =11A D D Figure6.ThresholdVoltagevsTemperature Figure7.On-StateResistancevsGate-to-SourceVoltage 6 SubmitDocumentationFeedback Copyright©2010–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17507Q5A

CSD17507Q5A www.ti.com SLPS243G–JULY2010–REVISEDJANUARY2017 Typical MOSFET Characteristics (continued) T =25°C(unlessotherwisestated) A 1.8 100 TC = 25° C ce 1.6 A) 10 TC = 125° C Resistan 1.4 Current ( 1 ate 1.2 ain St Dr 0.1 Normalized On- 00..681 - Source-to-SD 0.00.0011 I 0.4 0.0001 -75 -50 -25 0 25 50 75 100 125 150 175 0.2 0.4 0.6 0.8 1 1.2 TC - Case Temperature (° C) D008 VSD - Source-to-Drain Voltage (V) D009 I =11A,V =10V D GS Figure8.NormalizedOn-StateResistancevsTemperature Figure9.TypicalDiodeForwardVoltage 1000 100 TC = 25q C A) A) TC = 125q C nt ( 100 nt ( e e urr urr C C e e c h o-Sour 10 valanc 10 ain-t ak A Dr 1 Pe I - DS D10C ms 11000 µ µss I - AV 1 ms 0.1 1 0.1 1 10 100 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) D010 TAV - Time in Avalanche (ms) D011 Singlepulse,maxR =2.1°C/W θJC Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching 80 A) 70 ent ( 60 urr C 50 e c our 40 S o- n-t 30 ai Dr 20 - S ID 10 0 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (° C) D012 Figure12.MaximumDrainCurrentvsTemperature Copyright©2010–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:CSD17507Q5A

CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 www.ti.com 6 Device and Documentation Support 6.1 Receiving Notification of Documentation Updates To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed.Forchangedetails,reviewtherevisionhistoryincludedinanyreviseddocument. 6.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TIE2E™OnlineCommunity TI'sEngineer-to-Engineer(E2E)Community.Createdtofostercollaboration amongengineers.Ate2e.ti.com,youcanaskquestions,shareknowledge,exploreideasandhelp solveproblemswithfellowengineers. DesignSupport TI'sDesignSupport QuicklyfindhelpfulE2Eforumsalongwithdesignsupporttoolsand contactinformationfortechnicalsupport. 6.3 Trademarks NexFET,E2EaretrademarksofTexasInstruments. Allothertrademarksarethepropertyoftheirrespectiveowners. 6.4 Electrostatic Discharge Caution Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. 6.5 Glossary SLYZ022—TIGlossary. Thisglossarylistsandexplainsterms,acronyms,anddefinitions. 8 SubmitDocumentationFeedback Copyright©2010–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17507Q5A

CSD17507Q5A www.ti.com SLPS243G–JULY2010–REVISEDJANUARY2017 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of thisdocument.Forbrowser-basedversionsofthisdatasheet,refertotheleft-handnavigation. 7.1 Q5A Package Dimensions 1 8 8 1 2 7 7 2 3 6 6 3 4 5 5 4 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 E3 3.03 3.13 3.23 e 1.17 1.27 1.37 e1 0.27 0.37 0.47 e2 0.15 0.25 0.35 H 0.41 0.56 0.71 K 1.10 — — L 0.51 0.61 0.71 L1 0.06 0.13 0.20 θ 0° — 12° Copyright©2010–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:CSD17507Q5A

CSD17507Q5A SLPS243G–JULY2010–REVISEDJANUARY2017 www.ti.com 7.2 Recommended PCB Pattern F1 F6 F7 5 4 9 5 F F 2 11 3 F F F 8 1 F10 8 4 F F M0139-01 MILLIMETERS INCHES DIM MIN MAX MIN MAX F1 6.205 6.305 0.244 0.248 F2 4.46 4.56 0.176 0.18 F3 4.46 4.56 0.176 0.18 F4 0.65 0.7 0.026 0.028 F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 F7 0.7 0.8 0.028 0.031 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 F10 4.9 5 0.193 0.197 F11 4.46 4.56 0.176 0.18 For recommended circuit layout for PCB designs, see Reducing Ringing Through PCB Layout Techniques (SLPA005). 10 SubmitDocumentationFeedback Copyright©2010–2017,TexasInstrumentsIncorporated ProductFolderLinks:CSD17507Q5A

CSD17507Q5A www.ti.com SLPS243G–JULY2010–REVISEDJANUARY2017 7.3 Recommended Stencil Opening (0.020) 8x 0.500 (0.020) 0.500 0.500 (0.020) 8x 4 5 1.585 1.235 (0.024) (0.062) (0.049) 0.620 (0.170)4.310 0.385 (0.015) 1.570(0.062) 4x 1.270(0.050) 8 1 0.615 1.105 (0.024) (0.044) 3.020 (0.119) 7.4 Q5A Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2. 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm. 3. Material:blackstatic-dissipativepolystyrene. 4. Alldimensionsareinmm(unlessotherwisespecified). 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket. Copyright©2010–2017,TexasInstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:CSD17507Q5A

PACKAGE OPTION ADDENDUM www.ti.com 6-Feb-2020 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17507Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS SN Level-1-260C-UNLIM -55 to 150 CSD17507 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based flame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

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