CSD17306Q5A www.ti.com SLPS253A–FEBRUARY2010–REVISEDJULY2010 30V, N-Channel NexFET™ Power MOSFETs CheckforSamples:CSD17306Q5A FEATURES 1 PRODUCTSUMMARY • Optimizedfor5VGateDrive 2 • UltralowQ andQ VDS DraintoSourceVoltage 30 V g gd Qg GateChargeTotal(4.5V) 11.8 nC • LowThermalResistance Qgd GateChargeGatetoDrain 2.4 nC • AvalancheRated VGS=3V 4.2 mΩ • PbFreeTerminalPlating RDS(on) DraintoSourceOnResistance VGS=4.5V 3.3 mΩ • RoHSCompliant VGS=8V 2.9 mΩ • HalogenFree VGS(th) ThresholdVoltage 1.1 V • SON5-mm×6-mmPlasticPackage ORDERINGINFORMATION APPLICATIONS Device Package Media Qty Ship SON5-mm×6-mm 13-Inch Tapeand • NotebookPointofLoad CSD17306Q5A 2500 PlasticPackage Reel Reel • Point-of-LoadSynchronousBuckin Networking,TelecomandComputingSystems ABSOLUTEMAXIMUMRATINGS DESCRIPTION TA=25°Cunlessotherwisestated VALUE UNIT VDS DraintoSourceVoltage 30 V The NexFET™ power MOSFET has been designed VGS GatetoSourceVoltage +10/–8 V to minimize losses in power conversion applications, ContinuousDrainCurrent,TC=25°C 100 A andoptimizedfor5Vgatedriveapplications. ID ContinuousDrainCurrent(1) 24 A TopView IDM PulsedDrainCurrent,TA=25°C(2) 155 A PD PowerDissipation(1) 3.2 W S 1 8 D TJ, OperatingJunctionandStorage –55to150 °C TSTG TemperatureRange AvalancheEnergy,SinglePulse S 2 7 D EAS ID=74A,L=0.1mH,RG=25Ω 274 mJ (1) TypicalR =39°C/Wona1-inch2(6.45-cm2), S 3 6 D qJA 2-oz.(0.071-mmthick)Cupadona0.06-inch(1.52-mm)thick D FR4PCB. G 4 5 D (2) Pulseduration≤300ms,dutycycle≤2% P0093-01 Text4Spacing Text4Spacing R vsV GATECHARGE DS(on) GS 16 8 Ωn-State Resistance - m 11168024 TC = 125°C ID = 22A e-to-Source Voltage - V 34567 IVDD =S 2=2 1A5V O at R - DS(on) 24 TC = 25°C V - GGS 12 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 VGS - Gate-to-Source Voltage - V G006 Qg - Gate Charge - nC G003 1 Pleasebeawarethatanimportantnoticeconcerningavailability,standardwarranty,anduseincriticalapplicationsofTexas Instrumentssemiconductorproductsanddisclaimerstheretoappearsattheendofthisdatasheet. NexFETisatrademarkofTexasInstruments. 2 PRODUCTIONDATAinformationiscurrentasofpublicationdate. Copyright©2010,TexasInstrumentsIncorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarilyincludetestingofallparameters.

CSD17306Q5A SLPS253A–FEBRUARY2010–REVISEDJULY2010 www.ti.com Thesedeviceshavelimitedbuilt-inESDprotection.Theleadsshouldbeshortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamagetotheMOSgates. ELECTRICAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER TESTCONDITIONS MIN TYP MAX UNIT StaticCharacteristics BV DraintoSourceVoltage V =0V,I =250mA 30 V DSS GS D I DraintoSourceLeakageCurrent V =0V,V =24V 1 mA DSS GS DS I GatetoSourceLeakageCurrent V =0V,V =+10/–8V 100 nA GSS DS GS V GatetoSourceThresholdVoltage V =V ,I =250mA 0.9 1.1 1.6 V GS(th) DS GS D V =3V,I =22A 4.2 5.4 mΩ GS D R DraintoSourceOnResistance V =4.5V,I =22A 3.3 4.2 mΩ DS(on) GS D V =8V,I =22A 2.9 3.7 mΩ GS D g Transconductance V =15V,I =22A 105 S fs DS D DynamicCharacteristics C InputCapacitance 1670 2170 pF iss V =0V,V =15V, C OutputCapacitance GS DS 890 1160 pF oss f=1MHz C ReverseTransferCapacitance 56 73 pF rss R SeriesGateResistance 1 2 Ω G Q GateChargeTotal(4.5V) 11.8 15.3 nC g Q GateChargeGatetoDrain 2.4 nC gd V =15V,I =22A DS D Q GateChargeGatetoSource 3.5 nC gs Q GateChargeatVth 1.8 nC g(th) Q OutputCharge V =13.4V,V =0V 23 nC oss DS GS t TurnOnDelayTime 7.8 ns d(on) tr RiseTime VDS=15V,VGS=4.5V, 13.1 ns td(off) TurnOffDelayTime IDS=22A,RG=2Ω 18.4 ns t FallTime 6.4 ns f DiodeCharacteristics V DiodeForwardVoltage I =22A,V =0V 0.85 1 V SD DS GS Q ReverseRecoveryCharge 27 nC rr V =14V,I =25A,di/dt=300A/ms DD F t ReverseRecoveryTime 25 ns rr THERMAL CHARACTERISTICS (T =25°Cunlessotherwisestated) A PARAMETER MIN TYP MAX UNIT R ThermalResistanceJunctiontoCase(1) 0.9 °C/W qJC R ThermalResistanceJunctiontoAmbient(1)(2) 49 °C/W qJA (1) R isdeterminedwiththedevicemountedona1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cupadona1.5-inch×1.5-inch(3.81-cm× qJC 3.81-cm),0.06-inch(1.52-mm)thickFR4PCB.R isspecifiedbydesign,whereasR isdeterminedbytheuser’sboarddesign. qJC qJA (2) DevicemountedonFR4materialwith1-inch2(6.45-cm2),2-oz.(0.071-mmthick)Cu. 2 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A www.ti.com SLPS253A–FEBRUARY2010–REVISEDJULY2010 GATE Source GATE Source N N - - C C h h a a n n MaxR =49°C/W MaxR =120°C/W 5x qJA 5x qJA 6 whenmountedon 6 whenmountedona Q Q FN 1inch2(6.45-cm2)of FN minimumpadareaof TT 2-oz.(0.071-mmthick) TT 2-oz.(0.071-mmthick) A A M Cu. M Cu. A I X N R R e e v v 3 DRAIN 3 DRAIN M0137-01 M0137-02 TYPICAL MOSFET CHARACTERISTICS (T =25°Cunlessotherwisestated) A 10 e c n 1 a ed 0.5 mp 0.3 mal I 0.1 0.1 er 0.05 h Duty Cycle = t /t T 1 2 d 0.02 e aliz 0.01 P m Nor 0.01 t1 - t2 A 0.001 Single Pulse ZqJ Typical RqJA= 96°C/W (min Cu) TJ= P´ZqJA´RqJA 0.0001 0.001 0.01 0.1 1 10 100 1k t - Pulse Duration - s p G012 Figure1. TransientThermalImpedance Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A SLPS253A–FEBRUARY2010–REVISEDJULY2010 www.ti.com TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 80 80 VDS = 5V A 70 A 70 Source Current - 456000 VGSV =G 4S .=5 V8V Source Current - 456000 TC = 125°C n-to- 30 VGS = 3.5V n-to- 30 TC = 25°C ai ai Dr 20 VGS = 3V Dr 20 I - DS 10 VGS = 2.5V I - DS 10 TC = -55°C 0 0 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3 VDS - Drain-to-Source Voltage - V G001 VGS - Gate-to-Source Voltage - V G002 Figure2.SaturationCharacteristics Figure3.TransferCharacteristics TEXTADDEDFORSPACING TEXTADDEDFORSPACING 8 4.5 e - V 7 IVDD =S 2=2 1A5V 3.45 fV =G S1 =M H0Vz ag 6 F Coss = Cds + Cgd Gate-to-Source Volt 345 C - Capacitance - n 12..2355 Ciss = Cgd + Cgs V - GS 12 0.15 Crss = Cgd 0 0 0 5 10 15 20 0 5 10 15 20 25 30 Qg - Gate Charge - nC G003 VDS - Drain-to-Source Voltage - V G004 Figure4.GateCharge Figure5.Capacitance TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1.4 16 ID = 250µA Ω 14 ID = 22A 1.2 m ge - V 1 nce - 12 a a Volt sist 10 hold 0.8 e Re 8 TC = 125°C Thres 0.6 n-Stat 6 V - GS(th) 0.4 - OS(on) 4 0.2 RD 2 TC = 25°C 0 0 -75 -25 25 75 125 175 0 1 2 3 4 5 6 7 8 9 10 TC - Case Temperature - °C G005 VGS - Gate-to-Source Voltage - V G006 Figure6.ThresholdVoltagevs.Temperature Figure7.On-StateResistancevs.Gate-to-SourceVoltage 4 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A www.ti.com SLPS253A–FEBRUARY2010–REVISEDJULY2010 TYPICAL MOSFET CHARACTERISTICS (continued) (T =25°Cunlessotherwisestated) A TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1.6 100 ID = 22A Resistance 11..24 VGS = 8V Current - A 110 TC = 125°C ate 111 ain St Dr 0.1 alized On- 00..68 Source-to- 0.01 TC = 25°C orm - D 0.001 N 0.4 IS 0.2 0.0001 -75 -25 25 75 125 175 0 0.2 0.4 0.6 0.8 1 TC - Case Temperature - °C G007 VSD - Source-to-Drain Voltage - V G008 Figure8.NormalizedOn-StateResistancevs.Temperature Figure9.TypicalDiodeForwardVoltage TEXTADDEDFORSPACING TEXTADDEDFORSPACING 1k 1k A A nt - 100 1ms nt - e e urr urr 100 C C e 10 10ms e urc nch TC = 25°C o a I - Drain-to-SDS 0.11 STAbyinyprge iRclaeaD LlPS Ri(muonθlsiJ)tAee d= 96°C/W (min Cu) 11D11s0C101m0s I - Peak Aval(AV) 10 TC = 125°C 0.01 1 0.01 0.1 1 10 100 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage - V G009 t(AV) - Time in Avalanche - ms G010 Figure10.MaximumSafeOperatingArea Figure11.SinglePulseUnclampedInductiveSwitching TEXTADDEDFORSPACING 120 nt - A 100 e urr 80 C e c our 60 S o- ain-t 40 Dr - DS 20 I 0 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature - °C G011 Figure12. MaximumDrainCurrentvs.Temperature Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A SLPS253A–FEBRUARY2010–REVISEDJULY2010 www.ti.com MECHANICAL DATA Q5A Package Dimensions E2 L H K q 1 8 8 1 2 7 7 2 e D1 D2 3 6 6 3 5 4 5 4 L1 b Top View Side View Bottom View q E1 A c E Front View M0135-01 MILLIMETERS DIM MIN NOM MAX A 0.90 1.00 1.10 b 0.33 0.41 0.51 c 0.20 0.25 0.34 D1 4.80 4.90 5.00 D2 3.61 3.81 4.02 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.17 1.27 1.37 H 0.41 0.56 0.71 K 1.10 L 0.51 0.61 0.71 L1 0.06 0.13 0.20 q 0° 12° 6 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A www.ti.com SLPS253A–FEBRUARY2010–REVISEDJULY2010 MILLIMETERS INCHES RecommendedPCBPattern DIM MIN MAX MIN MAX F1 F1 6.205 6.305 0.244 0.248 F6 F7 F2 4.46 4.56 0.176 0.18 F3 4.46 4.56 0.176 0.18 5 4 9 5 F4 0.65 0.7 0.026 0.028 F F F5 0.62 0.67 0.024 0.026 F6 0.63 0.68 0.025 0.027 2 11 3 F F F F7 0.7 0.8 0.028 0.031 F8 0.65 0.7 0.026 0.028 F9 0.62 0.67 0.024 0.026 8 1 F10 4.9 5 0.193 0.197 F11 4.46 4.56 0.176 0.18 F10 8 4 F F M0139-01 For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through PCBLayoutTechniques. Q5A Tape and Reel Information 0 1 K0 0. ± 0.30 ±0.05 4.00 ±0.10 (See Note 1) 5 7 2.00 ±0.05 Ø 1.50 +0.10 1. –0.00 0 3 0. ± 0 B0 2.0 1 5 0 0. ± 0 5 5. A0 8.00 ±0.10 R 0.30 MAX Ø 1.50 MIN R 0.30TYP A0 = 6.50 ±0.10 B0 = 5.30 ±0.10 K0 = 1.40 ±0.10 M0138-01 Notes: 1. 10-sprockethole-pitchcumulativetolerance±0.2 2. Cambernottoexceed1mmin100mm,noncumulativeover250mm 3. Material:blackstatic-dissipativepolystyrene 4. Alldimensionsareinmm(unlessotherwisespecified) 5. A0andB0measuredonaplane0.3mmabovethebottomofthepocket Copyright©2010,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLink(s):CSD17306Q5A

CSD17306Q5A SLPS253A–FEBRUARY2010–REVISEDJULY2010 www.ti.com REVISION HISTORY ChangesfromOriginal(February2010)toRevisionA Page • UpdatedtheQ5APackageDimensionstable.DIMcMAXwas0.30,DIMD2MAXwas3.96,DIMeMINwasblank MAXwasblank,DIMHNOMwas0.51MAXwas0.61 ....................................................................................................... 6 • DeletedNote6fromtheQ5ATapeandReelInformation-"MSL1260°C(IRandconvection)PbFreflow compatible" ........................................................................................................................................................................... 7 • DeletedthePackageMarkingInformationsection ............................................................................................................... 7 8 SubmitDocumentationFeedback Copyright©2010,TexasInstrumentsIncorporated ProductFolderLink(s):CSD17306Q5A

PACKAGE OPTION ADDENDUM www.ti.com 7-Jan-2016 PACKAGING INFORMATION Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples (1) Drawing Qty (2) (6) (3) (4/5) CSD17306Q5A ACTIVE VSONP DQJ 8 2500 Pb-Free (RoHS CU SN Level-1-260C-UNLIM -55 to 150 CSD17306 Exempt) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1

PACKAGE OPTION ADDENDUM www.ti.com 7-Jan-2016 Addendum-Page 2

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