RECTRON SEMICONDUCTOR CMPSH-3C TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE FEATURES *Power dissipation PD:(cid:9)(cid:9) 350(cid:9) mW (Tamb=25OC) *Forward current IF:(cid:9)(cid:9) 100(cid:9) mA *Reverse voltage VR:(cid:9)(cid:9) 30(cid:9) V SOT-23 *Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA *Case: Molded plastic *Epoxy: UL 94V-O rate flame retardant 00..004575((11..2400)) *Lead: MIL-STD-202E method 208C guaranteed *Mounting position: Any 0.006(0.15) 0.043(1.10) 0.003(0.08) 0.035(0.90) *Weight: 0.008 gram 0.020(0.50) 0.004(0.10) 0.012(0.30) 0.000(0.00) 0.100(2.55) 0.020(0.50) 0.089(2.25) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1 0.019(2.00) 0.118(3.00) Ratings at 25 oC ambient temperature unless otherwise specified. 0.071(1.80) 3 0.110(2.80) 2 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS SYMBOL MIN TYP MAX UNITS Reverse Breakdown Voltage (IR=100mA) V(BR) 30 - - V Reverse voltage leakage current (VR=25V) - - 500 nA Reverse voltage leakage current (VR=25V, TA= 100oC) IR - - 100 mA Forward voltage (IF=2mA) - - 0.33 V Forward voltage (IF=15mA) VF - - 0.45 V Forward voltage (IF=100mA) - - 1 V Diode capacitance (VR=0V, f=1MHz) Ctot - - 8 pF Reverse recovery time (IF=IR=10mA, IRR=1.0mA, RL=100W) trr - - 5 ns Marking DB2 Note 1: "Fully ROHS compliant", "100% Sn plating (Pb-free)". 2006-3

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