CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options are ceramic/metal flange and pill package. PPNa: cCkGaHgeV 1T4y5p0e:0 4F,4 C0G11H7V, 1444500103P3 Typical Performance Over 1.2-1.4 GHz (T = 25˚C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 545 540 530 530 530 W Gain 16.4 16.3 16.2 16.2 16.2 dB Drain Efficiency 69 69 68 66 65 % Note: Measured in the CGHV14500-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, P = 41 dBm. IN Features • Reference design amplifier 1.2 - 1.4 GHz Operation • FET tuning range UHF through 1800 MHz • 500 W Typical Output Power • 16 dB Power Gain 7 • 68% Typical Drain Efficiency 1 0 2 • <0.3 dB Pulsed Amplitude Droop t s ug • Internally pre-matched on input, unmatched output u A – 0 .4 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 84 mA 25˚C GMAX Maximum Drain Current1 I 36 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 40 in-oz CW Thermal Resistance, Junction to Case3 R 0.47 ˚C/W P = 334 W, 65˚C θJC DISS Pulsed Thermal Resistance, Junction to Case3 R 0.28 ˚C/W P = 334 W, 500 µsec, 10%, 85˚C θJC DISS Pulsed Thermal Resistance, Junction to Case4 R 0.31 ˚C/W P = 334 W, 500 µsec, 10%, 85˚C θJC DISS Case Operating Temperature5 T -40, +130 ˚C P = 334 W, 500 µsec, 10% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV14500P 4 Measured for the CGHV14500F 5 See also, the Power Dissipation De-rating Curve on Page 5 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 (T = 25˚C) C Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 83.6 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 50 V, I = 500 mA GS(Q) DC DS D Saturated Drain Current2 I 62.7 75.2 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 – – V V = -8 V, I = 83.6 mA BR DC GS D RF Characteristics3 (T = 25˚C, F = 1.4 GHz unless otherwise noted) C 0 Output Power P 400 500 – W V = 50 V, I = 500 mA, P = 41 dBm OUT DD DQ IN Drain Efficiency D 60 68 – % V = 50 V, I = 500 mA, P = 41 dBm E DD DQ IN Power Gain G 15.25 16.2 – dB V = 50 V, I = 500 mA, P = 41 dBm P DD DQ IN Pulsed Amplitude Droop D – -0.3 – dB V = 50 V, I = 500 mA DD DQ No damage at all phase angles, Output Mismatch Stress VSWR – 5 : 1 – Y V = 50 V, I = 500 mA, P = 41 dBm Pulsed DD DQ IN Dynamic Characteristics Input Capacitance C – 295 – pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 27 – pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 2.7 – pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV14500-AMP. Pulse Width = 500 μS, Duty Cycle = 10%. Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGHV14500 Rev 4.0 www.cree.com/rf

Typical Performance Figure 1. - CGHV14500 Small Signal Gain and Return Losses vs Frequency CGHV14500TypicalSparameters V = 50 V, I = 500 mA VDDdd=50V,DIQdq=500mA 20 15 10 B) d ( 5 e d u nit g 0 a M -5 -10 S(2,1) S(1,1) S(2,2) -15 1000 1100 1200 1300 1400 1500 1600 Frequency(MHz) Figure 2. - CGHV14500 Typical Output Power, Gain and Drain Efficiency vs Frequency V = 50C VG, HIV1 =4 550000T ympiAca, lPRF =R 4es1u dltBsm DD Vdd=50DVQ,Idq=500mA,INPin=41dBm Tcase = 25°C, Pulse Width = 500 µs, Duty Cycle = 10 % Tcase=25degC,PulseWidth=500us,DutyCycle=10% 700 80 Drain Efficiency 600 70 Drain Efficiency %)%) (( 500 OutpuOt Puotpwuet rPower 60 ncyncy W)W) ee wer(wer(400 Drain Efficiency 50 EfficiEffici PoPo OutputPower ainain putput330000 GGaaiinn 4400 &Dr&Dr OutOut DrainEfficiency B)B) dd (( 200 30 nn aiai GG Gain 100 20 Gain Gain Gain 0 10 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGHV14500 Rev 4.0 www.cree.com/rf

Typical Performance Figure 3. - CGHV14500 Typical RF Results V = 5C0G HVV, 1I45 0=0 5T0yp0i cmalAR,F PRe s=u 4lts1 dBm DD DQ IN Vdd=50V,Idq=500mA,Pin=37dBm Tcase = 85°C, Pulse Width = 500 µs, Duty Cycle = 10 % Tcase=85degC,PulseWidth=500us,DutyCycle=10% 700 80 600 Drain Efficiency 70 %)%) (( W)W)500 60 cycy nn (( ee erer cici PowPow400 OutputPower Output Power 50 nEffinEffi utut GGaaiinn aiai utputp300 DrainEfficiency 40 DrDr OO && B)B) dd (( 200 30 nn aiai GG 100 Gain 20 0 10 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Figure 4. - CGHV14500 Typical CW RF Results V = 50 V, I = 500 mA, P = 40 dBm, Tcase = 50°C DD DQ IN CGHV14500FCWRFResults Vdd=50V,Idq=500mA,Pin=40dBm,Tcase=50C 500 80 450 Output Power 70 400 60 %)%) W)W)350 cy(cy( Power(Power(300 Drain Efficiency 50 EfficienEfficien utpututput250 Pout 40 DrainDrain OO200 Gain 30 andand DrainEff B)B) 150 Gain dd (( 20 nn aiai 100 GG 10 50 0 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGHV14500 Rev 4.0 www.cree.com/rf

CGHV14500F-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 1 R3 RES, 1/16W, 0603, 1%, 4700 OHMS 1 L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT 1 C1, C23 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F 2 C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC 1 C3, C4 CAP, 1.5pF, +/-0.05pF, 250V, 0805, ATC 600F 2 C5,C6 CAP, 1.8pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C7,C8 CAP, 4.3pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C9,C10 CAP, 7.5pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C11,C24 CAP, 47pF,+/-5%, 250V, 0805, ATC 600F 2 C12,C25 CAP, 100pF, +/-5%, 250V, 0805, ATC 600F 2 C13,C26 CAP, 33000PF, 0805,100V, X7R 2 C14 CAP 10uF 16V TANTALUM 1 C15,C16 CAP, 5.6pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C17,C18 CAP, 3.6pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C19,C20 CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC 600F 2 C21,C22 CAP, 0.7pF, +/-0.05pF, 0805, ATC 600F 2 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350B, 0.020’ MIL THK, CGHV14500, 1.2-1.4GHZ 1 Q1 CGHV14500F 1 CGHV14500F-AMP Demonstration Amplifier Circuit Pill - 1ms 20% Flange - 1ms 20% Note 1 Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGHV14500 Rev 4.0 www.cree.com/rf

CGHV14500-AMP Demonstration Amplifier Circuit Outline CGHV14500-AMP Demonstration Amplifier Circuit Schematic Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGHV14500 Rev 4.0 www.cree.com/rf

Typical Performance Over 0.96 GHz - 1.3 GHz (T = 25˚C) of Demonstration Amplifier C Parameter 0.96 GHz 1.0 GHz 1.1 GHz 1.2 GHz 1.3 GHz Units Output Power 800 805 675 625 585 W Gain 18 18.1 17.3 17.0 16.7 dB Drain Efficiency 70 75 74 77 64 % Note: Measured in the CGHV14500-AMP2 amplifier circuit, under 500 μs pulse width, 10% duty cycle, P = 41 dBm. IN Typical Performance - CGHV14500-AMP2 Figure 1. - CGHV14500-AMP2 Typical Sparameters CGHV14500-AMP2 Typical Sparameters V = 50 V, I = 500 mA DDVdd=50DQV,Idq=500mA 20 15 10 )) BB dd (( ee dd uu 5 S11 tt nini S21 gg aa MM SS2222 0 -5 -10 800 900 1000 1100 1200 1300 1400 1500 Frequency(MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGHV14500 Rev 4.0 www.cree.com/rf

Typical Performance - CGHV14500-AMP2 CGHV14500-AMP2RFPerformance Figure 2. - CGHV14500-AMP2 Typical Sparameters Vdd=50V,Idq=500mA,Pin=41dBm,PulseWidth=500us,DutyCycle=10 V = 50 V, I = 500 mA, P = 41 dBm, Pulse Width = 500 μs, Duty Cycle 10% DD DQ IN % 1100 90 OutputPower 1000 Gain 80 DrainEfficiency 900 70 %)%) (( yy cc 800 60 nn W)W) ee wer(wer( 700 50 EfficiEffici oo nn PP aiai utut 660000 4400 DrDr pp && tt uu )) OO BB 500 30 dd (( nn aiai GG 400 20 300 10 200 0 900 950 1000 1050 1100 1150 1200 1250 1300 1350 Frequency(MHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGHV14500 Rev 4.0 www.cree.com/rf

CGHV14500F-AMP2 Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES,1/16W,0603,1%,562 OHMS 1 R2 RES, 5.1,OHM, +/- 1%, 1/16W,0603 1 R3 RES,1/16W,0603,1%,4.99K OHMS 1 C1, C7, C8, C23 CAP, 10pF, +/-0.1pF, 250V, 0805, ATC600F 4 C2, C15, C16 CAP, 5.6pF, +/-0.1pF, 250V, 0805, ATC600F 3 C3, C4, C5, C6 CAP, 2.2pF, +/-0.1pF, 250V, 0805, ATC600F 4 C17, C18 CAP, 2.4pF, +/-0.1pF, 250V, 0805, ATC600F 2 C19, C20 CAP, 2.0pF, +/-0.1pF, 250V, 0805, ATC600F 2 C31, C32 CAP, 2.7pF, +/-0.1pF, 250V, 0805, ATC600F 2 C22, C33 CAP, 1.5pF, +/-0.1pF, 250V, 0805, ATC600F 2 C11, C24 CAP, 47 PF +/- 5%, 250V, 0805, ATC600F 2 C12, C25 CAP, 100 PF +/- 5%, 250V, 0805, ATC 600F 2 C13, C26 CAP,33000PF, 0805,100V, X7R 2 C14 CAP 10UF 16V TANTALUM 1 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1, J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350B, 0.020” THK, CGHV14500-TB1 1 BASEPLATE, AL, 4.00 X 2.50 X 0.49, ALTERNATE HOLE PATTERN 1 CGHV14500F-AMP2 Demonstration Amplifier Circuit Pill - 1ms 20% Flange - 1ms 20% Note 1 Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGHV14500 Rev 4.0 www.cree.com/rf

CGHV14500-AMP2 Demonstration Amplifier Circuit Outline CGHV14500-AMP2 Demonstration Amplifier Circuit Schematic Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGHV14500 Rev 4.0 www.cree.com/rf

Product Dimensions CGHV14500F (Package Type — 440117) Product Dimensions CGHV14500P (Package Type — 440133) Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGHV14500 Rev 4.0 www.cree.com/rf

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 900 0.3 - j0.3 2.1 + j1.4 1000 0.3 - j0.4 2.0 +j0.7 1100 0.6 - j0.4 1.8 + j0.9 1200 0.8 - j0.7 1.5 + j0.9 1300 1.1 - j0.7 1.3 + j0.7 1400 1.2 - j0.1 1.2 + j0.5 1500 1.8 - j0.1 1.1 + j0.4 Note 1. V = 50 V, I = 500 mA in the 440117 package DD DQ Note 2. Optimized for power gain, P and Drain Efficiency SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability CGHV14500 Power Dissipation De-rating Curve Figure 5. - CGHV145C0G0HV T14ra50n0sTireannsti ePntoPwoweerr DDiissssipipataiotnioDne- RDaetin-gRCautrivneg Curve 400 350 Pill - 500 µs 10% 300 W)W) (( nn oo250 atiati Note 1 pp sisi DisDis200 Flange - CW erer ww oo PP150 Flange-500us10% 100 Pill-500us10% Flange-CW Pill-CW 50 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 12 CGHV14500 Rev 4.0 www.cree.com/rf

Part Number System CGHV14500F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Product Line Parameter Value Units Upper Frequency1 1.4 GHz Power Output 500 W F = Flanged Type - P = Package Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 1A = 10.0 GHz Examples: 2H = 27.0 GHz Table 2. Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 13 CGHV14500 Rev 4.0 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGHV14500F GaN HEMT Each CGHV14500P GaN HEMT Each CGHV14500-TB Test board without GaN HEMT Each CGHV14500F-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 14 CGHV14500 Rev 4.0 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2014 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 15 CGHV14500 Rev 4.0 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGHV14500F CGHV14500F-TB CGHV14500-TB