CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. The transistor could be utilized for band specific applications ranging from 900 through 1800 MHz. The package options are ceramic/metal flange and pill package. P PNa: cCkGaHgeV 1T4y2p5e:0 4F,4 C0G16H2V, 1444205106P1 Typical Performance Over 1.2-1.4 GHz (T = 25˚C) of Demonstration Amplifier C Parameter 1.2 GHz 1.25 GHz 1.3 GHz 1.35 GHz 1.4 GHz Units Output Power 365 365 350 310 330 W Gain 18.6 18.6 18.4 17.9 18.2 dB Drain Efficiency 80 80 77 74 76 % Note: Measured in the CGHV14250-AMP amplifier circuit, under 500 μs pulse width, 10% duty cycle, P = 37 dBm. IN Features • Reference design amplifier 1.2 - 1.4 GHz Operation • FET Tuning range UHF through 1800 MHz • 330 W Typical Output Power • 18 dB Power Gain 5 1 0 • 77% Typical Drain Efficiency 2 r e • <0.3 dB Pulsed Amplitude Droop b m ec • Internally pre-matched on input, unmatched output e D – 1 .1 v e R Subject to change without notice. 1 www.cree.com/rf

Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage V 125 Volts 25˚C DSS Gate-to-Source Voltage V -10, +2 Volts 25˚C GS Storage Temperature T -65, +150 ˚C STG Operating Junction Temperature T 225 ˚C J Maximum Forward Gate Current I 42 mA 25˚C GMAX Maximum Drain Current1 I 18 A 25˚C DMAX Soldering Temperature2 T 245 ˚C S Screw Torque τ 40 in-oz CW Thermal Resistance, Junction to Case3 R 0.95 ˚C/W P = 167 W, 65˚C θJC DISS Pulsed Thermal Resistance, Junction to Case3 R 0.57 ˚C/W P = 167 W, 500 µsec, 10%, 85˚C θJC DISS Pulsed Thermal Resistance, Junction to Case4 R 0.63 ˚C/W P = 167 W, 500 µsec, 10%, 85˚C θJC DISS Case Operating Temperature5 T -40, +130 ˚C P = 167 W, 500 µsec, 10% C DISS Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 Measured for the CGHV14250P 4 Measured for the CGHV14250F 5 See also, the Power Dissipation De-rating Curve on Page 5 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics1 (T = 25˚C) C Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 41.8 mA GS(th) DC DS D Gate Quiescent Voltage V – -2.7 – V V = 50 V, I = 500 mA GS(Q) DC DS D Saturated Drain Current2 I 31.4 37.6 – A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 150 – – V V = -8 V, I = 41.8 mA BR DC GS D RF Characteristics3 (T = 25˚C, F = 1.3 GHz unless otherwise noted) C 0 Output Power P 275 330 – W V = 50 V, I = 500 mA, P = 37 dBm OUT DD DQ IN Drain Efficiency D 63 77 – % V = 50 V, I = 500 mA, P = 37 dBm E DD DQ IN Power Gain G – 18.2 – dB V = 50 V, I = 500 mA, P = 37 dBm P DD DQ IN Pulsed Amplitude Droop D – -0.3 – dB V = 50 V, I = 500 mA DD DQ No damage at all phase angles, Output Mismatch Stress VSWR – 5 : 1 – Y V = 50 V, I = 500 mA, P = 37 dBm Pulsed DD DQ IN Dynamic Characteristics Input Capacitance C – 150 – pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs Output Capacitance C – 16 – pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C – 1.35 – pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV14250-AMP. Pulse Width = 500 μS, Duty Cycle = 10%. Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 2 CGHV14250 Rev 1.1 www.cree.com/rf

Typical Performance Figure 1. - CGHV14250 Typical Sparameters CGHV14250TypicalSparameters Tcase = 25°C V = 50 V, I = 500 mA Vdd=D5D0V,Idq=D5Q00mA 30 20 10 B)B) dd (( 0 ee dd uu nitnit gg--1100 aa MM -20 S(2,1) -30 S(1,1) S(2,2) -40 1 1.1 1.2 1.3 1.4 1.5 1.6 Frequency(GHz) Figure 2. - CGHV14250 Typical RF Results CGHV14250TypicalRFResults V = 50 V, I = 500 mA, P = 37 dBm DVDdd=50V,DIQdq=500mA,PIiNn=37dBm TcTacsaes e== 2255°Cde, gPCu,lsPeu lWseidWthid =th 5=0500 0µsu,s D,Duutyty CCyyccllee == 1100 %% 450 90 Drain Efficiency 400 80 350 70 %)%) (( W)W) 30D0rain Efficiency Output Power 60 ncyncy r(r( Output Power ciecie wewe 250 OutputPower 50 EffiEffi oo PP nn utut Gain rairai pp 200 40 DD utut DrainEfficiency && OO B)B) 150 30 dd GGaianin (( Gain Gain nn aiai 100 20 GG 50 10 0 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 3 CGHV14250 Rev 1.1 www.cree.com/rf

Typical Performance Figure 3. - CGHV14250 Typical RF Results CGHV14250TypicalRFResults V = 50 V, I = 500 mA, P = 37 dBm VdDDd=50V,IdDQq=500mA,PinIN=37dBm TTccaassee= =8 855d°eCg, CP,uPlsuels WeWiditdht h= =505000 µuss,, DDuuttyy CCyyccllee == 1100% % 400 80 Drain Efficiency 350 70 300 60 %)%) (( Output Power yy W)W) ncnc ower(ower( 250 OGuaitnputPower 50 EfficieEfficie PP nn putput 200 DrainEfficiency 40 DraiDrai utut && OO 150 30 B)B) dd Gain (( nn 100 20 aiai GG 50 10 0 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Figure 4. - CGHV14250 CW RF Results V = 50 V, I C G= H5V0104 m25A0F, PCW =R 3F7R deBsmult,s Tcase = 65°C DD DQ IN Vdd=50V,Idq=500mA,Pin=37dBm,Tcase=65C 350 70 Drain Efficiency 300 60 %)%) (( 250 50 yy cc nn W)W) Output Power ciecie er(er( 200 40 EffiEffi ww PoPo ainain rr utut DD pp 150 30 dd OutOut anan Gain B)B) dd 100 20 (( nn aiai GG 50 Pout 10 Gain DrainEff 0 0 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 Frequency(GHz) Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 4 CGHV14250 Rev 1.1 www.cree.com/rf

Source and Load Impedances D Z Source Z Load G S Frequency (MHz) Z Source Z Load 900 0.6 - j0.3 5.3 + j0.1 1000 0.7 - j0.8 4.3 +j0.8 1100 1.3 - j1.1 3.3 + j0.8 1200 1.8 - j1.1 3.0 + j0.4 1300 2.5 - j0.7 2.5 + j0.4 1400 3.4 - j0.7 2.3 + j0.1 1500 1.8 - j0.9 2.3 + j0 Note 1. V = 50 V, I = 500 mA in the 440162 package DD DQ Note 2. Optimized for power gain, P and Drain Efficiency SAT Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability CGHV14250F Power Dissipation De-rating Curve Figure 4. - CGHV14250 Transient Power Dissipation De-Rating Curve CGHV14250TransientPowerDissipationDe-RatingCurve 180 Pill - 500 µs 10% 160 140 120 W)W) Flange - CW (( nn oo 100 atiati pp DissiDissi 80 Note 1 erer ww oo 60 PP Flange-500us10% 40 Pill-500us10% Flange-1ms-20% 20 Pill-1ms-20% 0 0 25 50 75 100 125 150 175 200 225 250 MaximumCaseTemperature(°C) Note 1. Area exceeds Maximum Case Temperature (See Page 2). Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 5 CGHV14250 Rev 1.1 www.cree.com/rf

CGHV14250-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 1/16W, 0603, 1%, 562 OHMS 1 R2 RES, 5.1 OHM, +/-1%, 1/16W, 0603 1 R3 RES, 1/16W, 0603, 1%, 4700 OHMS 1 L1 INDUCTOR, CHIP, 6.8 nH, 0603 SMT 1 C1, C23 CAP, 27pF, +/- 5%, 250V, 0805, ATC 600F 2 C2 CAP, 2.0pF, +/- 0.1pF, 0603, ATC 1 C3, C4 CAP, 0.5pF, +/-0.05pF, 0805, ATC 600F 2 C5,C6 CAP, 1.0pF, +/-0.05 pF, 0805, ATC 600F 2 C7,C8,C9,C10 CAP, 3.0pF, +/-0.1pF, 250V, 0805, ATC 600F 4 C11,C24 CAP, 47pF,+/-5%, 250V, 0805, ATC 600F 2 C12,C25 CAP, 100pF, +/-5%, 250V, 0805, ATC 600F 2 C13,C26 CAP, 33000PF, 0805,100V, X7R 2 C14 CAP 10uF 16V TANTALUM 1 C15,C16,C17,C18 CAP, 3.9pF, +/-0.1pF, 250V, 0805, ATC 600F 4 C19,C20 CAP, 1.2pF, +/-0.05pF, 0805, ATC 600F 2 C27 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C28 CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC 1 J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2 1 PCB, RO4350, 0.020 MIL THK, CGHV14250, 1.2-1.4GHZ 1 Q1 CGHV14250 1 CGHV14250-AMP Demonstration Amplifier Circuit Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 6 CGHV14250 Rev 1.1 www.cree.com/rf

CGHV14250-AMP Demonstration Amplifier Circuit Outline CGHV14250-AMP Demonstration Amplifier Circuit Schematic Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 7 CGHV14250 Rev 1.1 www.cree.com/rf

Product Dimensions CGHV14250F (Package Type — 440162) Product Dimensions CGHV14250P (Package Type — 440161) Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 8 CGHV14250 Rev 1.1 www.cree.com/rf

Part Number System CGHV14250F Type Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency1 1.4 GHz Power Output 250 W F = Flanged Type - P = Package Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 1A = 10.0 GHz Examples: 2H = 27.0 GHz Table 2. Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 9 CGHV14250 Rev 1.1 www.cree.com/rf

Product Ordering Information Order Number Description Unit of Measure Image CGHV14250F GaN HEMT Each CGHV14250P GaN HEMT Each CGHV14250-TB Test board without GaN HEMT Each CGHV14250P-AMP Test board with GaN HEMT installed Each CGHV14250F-AMP Test board with GaN HEMT installed Each Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 10 CGHV14250 Rev 1.1 www.cree.com/rf

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Cree, Inc. 4600 Silicon Drive Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 registered trademarks of Cree, Inc. USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 11 CGHV14250 Rev 1.1 www.cree.com/rf

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: C ree, Inc.: CGHV14250F-TB CGHV14250F